KR910001758A - 금속 절연물 반도체형 다이나믹 랜덤 액세스 메모리 장치 - Google Patents

금속 절연물 반도체형 다이나믹 랜덤 액세스 메모리 장치

Info

Publication number
KR910001758A
KR910001758A KR1019890009096A KR890009096A KR910001758A KR 910001758 A KR910001758 A KR 910001758A KR 1019890009096 A KR1019890009096 A KR 1019890009096A KR 890009096 A KR890009096 A KR 890009096A KR 910001758 A KR910001758 A KR 910001758A
Authority
KR
South Korea
Prior art keywords
memory device
random access
access memory
dynamic random
semiconductor type
Prior art date
Application number
KR1019890009096A
Other languages
English (en)
Other versions
KR920010193B1 (ko
Inventor
다이지 에마
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR910001758A publication Critical patent/KR910001758A/ko
Application granted granted Critical
Publication of KR920010193B1 publication Critical patent/KR920010193B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
KR1019890009096A 1988-06-29 1989-06-29 금속 절연물 반도체형 다이나믹 랜덤 액세스 메모리 장치 KR920010193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-162189 1988-06-29
JP63162189A JP2682021B2 (ja) 1988-06-29 1988-06-29 半導体メモリ装置

Publications (2)

Publication Number Publication Date
KR910001758A true KR910001758A (ko) 1991-01-31
KR920010193B1 KR920010193B1 (ko) 1992-11-19

Family

ID=15749695

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890009096A KR920010193B1 (ko) 1988-06-29 1989-06-29 금속 절연물 반도체형 다이나믹 랜덤 액세스 메모리 장치

Country Status (5)

Country Link
US (1) US5025294A (ko)
EP (1) EP0352893B1 (ko)
JP (1) JP2682021B2 (ko)
KR (1) KR920010193B1 (ko)
DE (1) DE68919570T2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216267A (en) * 1989-05-10 1993-06-01 Samsung Electronics Co., Ltd. Stacked capacitor dynamic random access memory with a sloped lower electrode
KR920007358B1 (ko) * 1990-03-28 1992-08-31 금성일렉트론 주식회사 고집적 메모리 셀 및 코아 어레이 구조
JPH0834257B2 (ja) * 1990-04-20 1996-03-29 株式会社東芝 半導体メモリセル
KR920008294B1 (ko) * 1990-05-08 1992-09-26 금성일렉트론 주식회사 반도체 장치의 제조방법
KR920009748B1 (ko) * 1990-05-31 1992-10-22 삼성전자 주식회사 적층형 캐패시터셀의 구조 및 제조방법
JP2564972B2 (ja) * 1990-06-18 1996-12-18 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置
JPH06112433A (ja) * 1990-12-06 1994-04-22 Nec Corp 半導体メモリセルおよびその形成方法
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
JP2660111B2 (ja) * 1991-02-13 1997-10-08 株式会社東芝 半導体メモリセル
DE69222793T2 (de) * 1991-03-14 1998-03-12 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
JP3181311B2 (ja) * 1991-05-29 2001-07-03 株式会社東芝 半導体記憶装置
US5428235A (en) * 1991-06-14 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device including improved connection structure to FET elements
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
JPH05218349A (ja) * 1992-02-04 1993-08-27 Sony Corp 半導体記憶装置
JP3241106B2 (ja) * 1992-07-17 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置及びその製造方法
US5838038A (en) * 1992-09-22 1998-11-17 Kabushiki Kaisha Toshiba Dynamic random access memory device with the combined open/folded bit-line pair arrangement
DE69526006T2 (de) * 1994-08-15 2003-01-02 Ibm Anordnung mit einem einzigen Verdrillungsgebiet und Verfahren für gepaarte linienförmige Leiter in integrierten Schaltungen
US5866928A (en) * 1996-07-16 1999-02-02 Micron Technology, Inc. Single digit line with cell contact interconnect
JP4086926B2 (ja) * 1997-01-29 2008-05-14 富士通株式会社 半導体装置及びその製造方法
DE10011672A1 (de) * 2000-03-10 2001-09-20 Infineon Technologies Ag Integrierte DRAM-Speicherzelle sowie DRAM-Speicher
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS57201067A (en) * 1981-06-04 1982-12-09 Nec Corp Semiconductor memory cell
GB2143675B (en) * 1983-07-11 1987-05-07 Nat Semiconductor Corp High efficiency dynamic random access memory cell and process for fabricating it
JPS6070743A (ja) * 1983-09-27 1985-04-22 Fujitsu Ltd 半導体装置の製造方法
JPS59210663A (ja) * 1984-04-16 1984-11-29 Hitachi Ltd 半導体メモリ装置
JPS61140171A (ja) * 1984-12-13 1986-06-27 Toshiba Corp 半導体記憶装置
JPS61183955A (ja) * 1985-02-08 1986-08-16 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
JPS61183952A (ja) * 1985-02-09 1986-08-16 Fujitsu Ltd 半導体記憶装置及びその製造方法
JPH0736437B2 (ja) * 1985-11-29 1995-04-19 株式会社日立製作所 半導体メモリの製造方法
JPS62155558A (ja) * 1985-12-27 1987-07-10 Nec Corp Ｍｉｓ型半導体記憶装置

Also Published As

Publication number Publication date
EP0352893B1 (en) 1994-11-30
US5025294A (en) 1991-06-18
DE68919570T2 (de) 1995-04-13
JPH0210867A (ja) 1990-01-16
EP0352893A1 (en) 1990-01-31
KR920010193B1 (ko) 1992-11-19
DE68919570D1 (de) 1995-01-12
JP2682021B2 (ja) 1997-11-26

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