GB2143675B - High efficiency dynamic random access memory cell and process for fabricating it - Google Patents

High efficiency dynamic random access memory cell and process for fabricating it

Info

Publication number
GB2143675B
GB2143675B GB08416781A GB8416781A GB2143675B GB 2143675 B GB2143675 B GB 2143675B GB 08416781 A GB08416781 A GB 08416781A GB 8416781 A GB8416781 A GB 8416781A GB 2143675 B GB2143675 B GB 2143675B
Authority
GB
United Kingdom
Prior art keywords
fabricating
memory cell
random access
access memory
high efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08416781A
Other versions
GB2143675A (en
GB8416781D0 (en
Inventor
Kai Yang Karl Hsu
Andrew G Varadi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of GB8416781D0 publication Critical patent/GB8416781D0/en
Publication of GB2143675A publication Critical patent/GB2143675A/en
Application granted granted Critical
Publication of GB2143675B publication Critical patent/GB2143675B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB08416781A 1983-07-11 1984-07-02 High efficiency dynamic random access memory cell and process for fabricating it Expired GB2143675B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51286883A 1983-07-11 1983-07-11

Publications (3)

Publication Number Publication Date
GB8416781D0 GB8416781D0 (en) 1984-08-08
GB2143675A GB2143675A (en) 1985-02-13
GB2143675B true GB2143675B (en) 1987-05-07

Family

ID=24040938

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08416781A Expired GB2143675B (en) 1983-07-11 1984-07-02 High efficiency dynamic random access memory cell and process for fabricating it

Country Status (4)

Country Link
JP (1) JPS60149160A (en)
DE (1) DE3425072A1 (en)
FR (1) FR2549274B1 (en)
GB (1) GB2143675B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736437B2 (en) * 1985-11-29 1995-04-19 株式会社日立製作所 Method of manufacturing semiconductor memory
US5061654A (en) * 1987-07-01 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit having oxide regions with different thickness
JP2682021B2 (en) * 1988-06-29 1997-11-26 富士通株式会社 Semiconductor memory device
KR920009748B1 (en) * 1990-05-31 1992-10-22 삼성전자 주식회사 Stacked capacitor cell and method for producing the same
JPH0497566A (en) * 1990-08-15 1992-03-30 Nec Corp Semiconductor device
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
JP2773505B2 (en) * 1991-12-27 1998-07-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JPH07142601A (en) * 1993-11-15 1995-06-02 Nec Corp Manufacture method of semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491083A (en) * 1977-12-28 1979-07-19 Nec Corp Integrated-circuit device
JPS5621358A (en) * 1979-07-30 1981-02-27 Fujitsu Ltd Semiconductor memory device
JPS5793566A (en) * 1980-12-03 1982-06-10 Seiko Epson Corp Semiconductor device
JPS5854654A (en) * 1981-09-28 1983-03-31 Nec Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE3425072A1 (en) 1985-01-24
GB2143675A (en) 1985-02-13
FR2549274B1 (en) 1990-01-26
GB8416781D0 (en) 1984-08-08
FR2549274A1 (en) 1985-01-18
JPS60149160A (en) 1985-08-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950702