DE3863604D1 - Dynamischer speicher mit wahlfreiem zugriff und mit selbstauffrischungsfunktion. - Google Patents
Dynamischer speicher mit wahlfreiem zugriff und mit selbstauffrischungsfunktion.Info
- Publication number
- DE3863604D1 DE3863604D1 DE8888306838T DE3863604T DE3863604D1 DE 3863604 D1 DE3863604 D1 DE 3863604D1 DE 8888306838 T DE8888306838 T DE 8888306838T DE 3863604 T DE3863604 T DE 3863604T DE 3863604 D1 DE3863604 D1 DE 3863604D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- dynamic memory
- optional access
- refreshing function
- refreshing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187192A JPS6432489A (en) | 1987-07-27 | 1987-07-27 | Memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3863604D1 true DE3863604D1 (de) | 1991-08-14 |
Family
ID=16201713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888306838T Expired - Lifetime DE3863604D1 (de) | 1987-07-27 | 1988-07-25 | Dynamischer speicher mit wahlfreiem zugriff und mit selbstauffrischungsfunktion. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4935900A (de) |
EP (1) | EP0301794B1 (de) |
JP (1) | JPS6432489A (de) |
KR (1) | KR910009440B1 (de) |
DE (1) | DE3863604D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2239539B (en) * | 1989-11-18 | 1994-05-18 | Active Book Co Ltd | Method of refreshing memory devices |
EP0473421B1 (de) * | 1990-08-30 | 1997-10-29 | Nec Corporation | Halbleiterspeicheranordnung |
JP2856598B2 (ja) * | 1992-06-04 | 1999-02-10 | 三菱電機株式会社 | ダイナミックランダムアクセスメモリ装置 |
JPH06124587A (ja) * | 1992-10-09 | 1994-05-06 | Mitsubishi Electric Corp | ダイナミックランダムアクセスメモリ装置 |
US5495491A (en) * | 1993-03-05 | 1996-02-27 | Motorola, Inc. | System using a memory controller controlling an error correction means to detect and correct memory errors when and over a time interval indicated by registers in the memory controller |
US5335202A (en) * | 1993-06-29 | 1994-08-02 | Micron Semiconductor, Inc. | Verifying dynamic memory refresh |
US5418751A (en) * | 1993-09-29 | 1995-05-23 | Texas Instruments Incorporated | Variable frequency oscillator controlled EEPROM charge pump |
US5446695A (en) * | 1994-03-22 | 1995-08-29 | International Business Machines Corporation | Memory device with programmable self-refreshing and testing methods therefore |
US5457659A (en) * | 1994-07-19 | 1995-10-10 | Micron Technology, Inc. | Programmable dynamic random access memory (DRAM) |
WO1996028825A1 (fr) * | 1995-03-15 | 1996-09-19 | Hitachi, Ltd. | Memoire a semi-conducteur |
JP3489906B2 (ja) * | 1995-04-18 | 2004-01-26 | 松下電器産業株式会社 | 半導体メモリ装置 |
US6433607B2 (en) * | 1998-01-21 | 2002-08-13 | Fujitsu Limited | Input circuit and semiconductor integrated circuit having the input circuit |
JP3177207B2 (ja) | 1998-01-27 | 2001-06-18 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | リフレッシュ間隔制御装置及び方法、並びにコンピュータ |
JP2000048567A (ja) * | 1998-05-22 | 2000-02-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
US6292869B1 (en) | 1998-08-31 | 2001-09-18 | International Business Machines Corporation | System and method for memory scrub during self timed refresh |
JP4454083B2 (ja) | 1999-11-29 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP4707803B2 (ja) * | 2000-07-10 | 2011-06-22 | エルピーダメモリ株式会社 | エラーレート判定方法と半導体集積回路装置 |
JP2002216472A (ja) * | 2001-01-22 | 2002-08-02 | Nec Corp | 半導体記憶装置 |
US7171605B2 (en) * | 2002-02-01 | 2007-01-30 | International Business Machines Corporation | Check bit free error correction for sleep mode data retention |
TWI249101B (en) * | 2002-04-11 | 2006-02-11 | Via Tech Inc | Method and related apparatus for using a dynamic random access memory to substitute for a hard disk drive |
JP4627411B2 (ja) * | 2003-05-20 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | メモリ装置及びメモリのエラー訂正方法 |
JP4608235B2 (ja) * | 2004-04-14 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置及び半導体記憶システム |
JP4237109B2 (ja) * | 2004-06-18 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
US7894282B2 (en) * | 2005-11-29 | 2011-02-22 | Samsung Electronics Co., Ltd. | Dynamic random access memory device and method of determining refresh cycle thereof |
CN101529396B (zh) * | 2006-10-20 | 2011-07-13 | 富士通株式会社 | 存储器设备以及更新调整方法 |
US7975170B2 (en) * | 2007-06-15 | 2011-07-05 | Qimonda Ag | Memory refresh system and method |
US8255740B2 (en) | 2010-09-27 | 2012-08-28 | International Business Machines Corporation | Multi-level DIMM error reduction |
KR20170030207A (ko) * | 2015-09-09 | 2017-03-17 | 에스케이하이닉스 주식회사 | 메모리 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5148229A (de) * | 1974-10-23 | 1976-04-24 | Hitachi Ltd | |
JPS5250648A (en) * | 1975-10-22 | 1977-04-22 | Hitachi Ltd | Semi-conductor memory |
JPS52137221A (en) * | 1976-05-12 | 1977-11-16 | Hitachi Ltd | Memory device |
US4333167A (en) * | 1979-10-05 | 1982-06-01 | Texas Instruments Incorporated | Dynamic memory with on-chip refresh invisible to CPU |
US4412314A (en) * | 1980-06-02 | 1983-10-25 | Mostek Corporation | Semiconductor memory for use in conjunction with error detection and correction circuit |
JPS5987695A (ja) * | 1982-11-11 | 1984-05-21 | Toshiba Corp | 半導体記憶装置 |
EP0116774B1 (de) * | 1982-12-27 | 1991-07-24 | Kabushiki Kaisha Toshiba | Halbleiterspeicheranordnung mit einem Auffrischungsmechanismus |
JPS6134793A (ja) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | ダイナミツクメモリ装置における診断及びエラ−訂正装置 |
JPS6150287A (ja) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | ダイナミツクメモリの自動リフレツシユ制御回路 |
JPS61214298A (ja) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | 誤り訂正機能を備えた半導体記憶装置 |
JPH087995B2 (ja) * | 1985-08-16 | 1996-01-29 | 富士通株式会社 | ダイナミツク半導体記憶装置のリフレツシユ方法および装置 |
-
1987
- 1987-07-27 JP JP62187192A patent/JPS6432489A/ja active Granted
-
1988
- 1988-07-25 DE DE8888306838T patent/DE3863604D1/de not_active Expired - Lifetime
- 1988-07-25 EP EP88306838A patent/EP0301794B1/de not_active Expired - Lifetime
- 1988-07-26 KR KR1019880009378A patent/KR910009440B1/ko not_active IP Right Cessation
- 1988-07-27 US US07/225,291 patent/US4935900A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR910009440B1 (ko) | 1991-11-16 |
KR890002885A (ko) | 1989-04-11 |
US4935900A (en) | 1990-06-19 |
JPH0456396B2 (de) | 1992-09-08 |
EP0301794B1 (de) | 1991-07-10 |
JPS6432489A (en) | 1989-02-02 |
EP0301794A1 (de) | 1989-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3863604D1 (de) | Dynamischer speicher mit wahlfreiem zugriff und mit selbstauffrischungsfunktion. | |
DE3771288D1 (de) | Dynamischer speicher mit wahlfreiem zugriff. | |
DE3854421D1 (de) | Dynamische Speicheranordnung mit wahlfreiem Zugriff und Herstellungsverfahren dafür. | |
DE69022609D1 (de) | Dynamische Speicherzelle mit wahlfreiem Zugriff. | |
DE3876415D1 (de) | Dynamischer direktzugriffsspeicher. | |
DE3853714D1 (de) | Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern. | |
DE68908937D1 (de) | Speicher und statische Speicherzelle; Speicherungsverfahren. | |
DE3584694D1 (de) | Dynamischer direktzugriffspeicher. | |
DE69016805D1 (de) | Dynamischer Direktzugriffsspeicher mit verbesserter Wortleitungssteuerung. | |
DE69422120D1 (de) | Synchroner dynamischer Speicher mit wahlfreiem Zugriff | |
DE3780840D1 (de) | Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff. | |
DE3584709D1 (de) | Dynamische speicherzelle mit wahlfreiem zugriff (dram). | |
DE3851649D1 (de) | Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. | |
DE69229988D1 (de) | Kombinierte DRAM- und SRAM-Speichermatrize | |
NL193295B (nl) | Dynamische halfgeleidergeheugeneenheid. | |
DE3854278D1 (de) | Aus einer Vielzahl von Eintransistorspeicherzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff. | |
DE3787187D1 (de) | Dynamischer Lese-Schreibspeicher mit Auffrischwirkung. | |
KR880700425A (ko) | 스태틱 랜덤 엑세스 메모리 | |
NL193124B (nl) | Statische willekeurig toegankelijke geheugeninrichting. | |
DE68919570D1 (de) | Dynamische Speicheranordnung mit wahlfreiem Zugriff vom Metall-Isolator-Halbleiter-Typ. | |
EP0278155A3 (en) | Dynamic random access memory | |
DE69027886D1 (de) | Direktzugriffsspeicher vom dynamischen Typ | |
DE68919718D1 (de) | Pseudo-statischer Direktzugriffspeicher. | |
DE69125542D1 (de) | Dynamischer Direktzugriffspeicher | |
DE69028625D1 (de) | Dynamische Speichereinrichtung mit wahlfreiem Zugriff |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, |
|
8339 | Ceased/non-payment of the annual fee |