DE3853714D1 - Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern. - Google Patents

Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern.

Info

Publication number
DE3853714D1
DE3853714D1 DE3853714T DE3853714T DE3853714D1 DE 3853714 D1 DE3853714 D1 DE 3853714D1 DE 3853714 T DE3853714 T DE 3853714T DE 3853714 T DE3853714 T DE 3853714T DE 3853714 D1 DE3853714 D1 DE 3853714D1
Authority
DE
Germany
Prior art keywords
access memory
sense amplifiers
direct access
shared sense
dynamic direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3853714T
Other languages
English (en)
Inventor
Masayuki Patents D Miyabayashi
Kaneyoshi Patents Di Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3853714D1 publication Critical patent/DE3853714D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE3853714T 1987-12-25 1988-12-22 Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern. Expired - Lifetime DE3853714D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62328895A JPH01171195A (ja) 1987-12-25 1987-12-25 メモリ装置

Publications (1)

Publication Number Publication Date
DE3853714D1 true DE3853714D1 (de) 1995-06-08

Family

ID=18215292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853714T Expired - Lifetime DE3853714D1 (de) 1987-12-25 1988-12-22 Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern.

Country Status (4)

Country Link
US (1) US4916667A (de)
EP (1) EP0323172B1 (de)
JP (1) JPH01171195A (de)
DE (1) DE3853714D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297097A (en) * 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
KR910009444B1 (ko) * 1988-12-20 1991-11-16 삼성전자 주식회사 반도체 메모리 장치
JPH02246516A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 半導体装置
US4964081A (en) * 1989-08-11 1990-10-16 Cray Research, Inc. Read-while-write ram cell
US5579273A (en) * 1990-03-01 1996-11-26 Texas Instruments Incorporated Storage circuitry using sense amplifier shared between memories of differing number of rows
US5426610A (en) * 1990-03-01 1995-06-20 Texas Instruments Incorporated Storage circuitry using sense amplifier with temporary pause for voltage supply isolation
KR940008296B1 (ko) * 1991-06-19 1994-09-10 삼성전자 주식회사 고속 센싱동작을 수행하는 센스앰프
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로
US5475642A (en) * 1992-06-23 1995-12-12 Taylor; David L. Dynamic random access memory with bit line preamp/driver
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
US5715189A (en) * 1993-04-13 1998-02-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having hierarchical bit line arrangement
US5369622A (en) * 1993-04-20 1994-11-29 Micron Semiconductor, Inc. Memory with isolated digit lines
US5754478A (en) 1993-04-20 1998-05-19 Micron Technology, Inc. Fast, low power, write scheme for memory circuits using pulsed off isolation device
JPH06333386A (ja) * 1993-05-20 1994-12-02 Fujitsu Ltd 半導体記憶装置
KR0138881B1 (ko) * 1993-07-07 1998-06-01 세끼모또 다다히로 반도체 메모리 장치
JP3178946B2 (ja) * 1993-08-31 2001-06-25 沖電気工業株式会社 半導体記憶装置及びその駆動方法
JP3218844B2 (ja) * 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
US5836007A (en) * 1995-09-14 1998-11-10 International Business Machines Corporation Methods and systems for improving memory component size and access speed including splitting bit lines and alternate pre-charge/access cycles
GB2321734A (en) * 1997-01-30 1998-08-05 Motorola Inc Circuit and method of latching a bit line in a non-volatile memory
US5835433A (en) * 1997-06-09 1998-11-10 Micron Technology, Inc. Floating isolation gate from DRAM sensing
US6049492A (en) * 1998-06-29 2000-04-11 Siemens Aktiengesellschaft Interleaved sense amplifier with a single-sided precharge device
KR100464947B1 (ko) * 1998-12-30 2005-05-20 주식회사 하이닉스반도체 디램의리프레시방법
EP1181691B1 (de) * 2000-03-13 2005-08-24 Infineon Technologies AG Schreib-leseverstärker für eine dram-speicherzelle sowie dram-speicher
US6479851B1 (en) * 2000-05-16 2002-11-12 Hynix Semiconductor, Inc. Memory device with divided bit-line architecture
DE60032644T2 (de) * 2000-06-29 2007-10-04 Fujitsu Ltd., Kawasaki Halbleiter-speicherbaustein
KR101997153B1 (ko) 2013-04-01 2019-07-05 삼성전자주식회사 밸런싱 커패시터를 갖는 반도체 소자 및 그 형성 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置
JPS5880189A (ja) * 1981-11-05 1983-05-14 Fujitsu Ltd 半導体記憶装置
JPS592365A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd ダイナミツク型半導体記憶装置
US4656613A (en) * 1984-08-29 1987-04-07 Texas Instruments Incorporated Semiconductor dynamic memory device with decoded active loads
JPS62114190A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体記憶装置
JPS62197992A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp ダイナミツクｒａｍ
JPH07111823B2 (ja) * 1986-03-18 1995-11-29 三菱電機株式会社 半導体記憶装置

Also Published As

Publication number Publication date
US4916667A (en) 1990-04-10
EP0323172A2 (de) 1989-07-05
EP0323172B1 (de) 1995-05-03
JPH01171195A (ja) 1989-07-06
EP0323172A3 (de) 1991-01-30

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Legal Events

Date Code Title Description
8332 No legal effect for de