DE69027886T2 - Direktzugriffsspeicher vom dynamischen Typ - Google Patents

Direktzugriffsspeicher vom dynamischen Typ

Info

Publication number
DE69027886T2
DE69027886T2 DE69027886T DE69027886T DE69027886T2 DE 69027886 T2 DE69027886 T2 DE 69027886T2 DE 69027886 T DE69027886 T DE 69027886T DE 69027886 T DE69027886 T DE 69027886T DE 69027886 T2 DE69027886 T2 DE 69027886T2
Authority
DE
Germany
Prior art keywords
random access
access memory
type random
dynamic type
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027886T
Other languages
English (en)
Other versions
DE69027886D1 (de
Inventor
Takashi Ohsawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69027886D1 publication Critical patent/DE69027886D1/de
Publication of DE69027886T2 publication Critical patent/DE69027886T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
DE69027886T 1989-05-15 1990-05-15 Direktzugriffsspeicher vom dynamischen Typ Expired - Fee Related DE69027886T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1121204A JPH0762955B2 (ja) 1989-05-15 1989-05-15 ダイナミック型ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
DE69027886D1 DE69027886D1 (de) 1996-08-29
DE69027886T2 true DE69027886T2 (de) 1997-01-02

Family

ID=14805444

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027886T Expired - Fee Related DE69027886T2 (de) 1989-05-15 1990-05-15 Direktzugriffsspeicher vom dynamischen Typ

Country Status (5)

Country Link
US (1) US5091885A (de)
EP (1) EP0398245B1 (de)
JP (1) JPH0762955B2 (de)
KR (1) KR970001340B1 (de)
DE (1) DE69027886T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9007788D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dynamic memory bitline precharge scheme
GB9007789D0 (en) 1990-04-06 1990-06-06 Foss Richard C Method for dram sensing current control
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
JPH0834257B2 (ja) * 1990-04-20 1996-03-29 株式会社東芝 半導体メモリセル
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置
JPH0492287A (ja) * 1990-08-08 1992-03-25 Internatl Business Mach Corp <Ibm> ダイナミック・ランダム・アクセス・メモリ
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
DE69222793T2 (de) * 1991-03-14 1998-03-12 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
JP3279615B2 (ja) * 1991-04-15 2002-04-30 株式会社日立製作所 半導体装置
KR950014248B1 (ko) * 1991-04-19 1995-11-23 마쯔시다덴기산교 가부시기가이샤 다이나믹 ram의 판독/기록회로
JP3181311B2 (ja) * 1991-05-29 2001-07-03 株式会社東芝 半導体記憶装置
JP2748744B2 (ja) * 1991-10-01 1998-05-13 日本電気株式会社 半導体記憶装置
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
KR0179678B1 (ko) * 1993-09-10 1999-04-15 사토 후미오 반도체 기억장치
DE59407879D1 (de) * 1994-01-12 1999-04-08 Siemens Ag Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
KR0171954B1 (ko) * 1995-06-30 1999-03-30 김주용 데이타 버스 구동 회로
KR0153602B1 (ko) * 1995-10-04 1998-12-01 김광호 반도체 메모리 장치의 데이타 고속 전송회로
KR100264075B1 (ko) 1997-06-20 2000-08-16 김영환 전하 증폭 비트 라인 센스 앰프
JP2000231791A (ja) * 1998-12-10 2000-08-22 Fujitsu Ltd 半導体記憶装置及びデータバスのリセット方法
US6522592B2 (en) * 2001-04-19 2003-02-18 Micron Technology, Inc. Sense amplifier for reduction of access device leakage
JP2005322380A (ja) * 2004-04-09 2005-11-17 Toshiba Corp 半導体記憶装置
KR100765653B1 (ko) 2006-07-10 2007-10-10 현대자동차주식회사 자동차용 글래스 안테나 잭

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
DE2712735B1 (de) * 1977-03-23 1978-09-14 Ibm Deutschland Lese-/Schreibzugriffschaltung zu Speicherzellen eines Speichers und Verfahren zu ihrem Betrieb
KR900004635B1 (ko) * 1987-06-27 1990-06-30 삼성반도체통신 주식회사 반도체 메모리장치의 충전 및 등화회로
JPS6446288A (en) * 1987-08-13 1989-02-20 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
EP0398245A2 (de) 1990-11-22
EP0398245A3 (de) 1992-07-01
KR900019038A (ko) 1990-12-22
EP0398245B1 (de) 1996-07-24
KR970001340B1 (ko) 1997-02-05
JPH02301096A (ja) 1990-12-13
JPH0762955B2 (ja) 1995-07-05
US5091885A (en) 1992-02-25
DE69027886D1 (de) 1996-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee