DE602005020891D1 - Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents
Lithographischer Apparat und Verfahren zur Herstellung einer VorrichtungInfo
- Publication number
- DE602005020891D1 DE602005020891D1 DE602005020891T DE602005020891T DE602005020891D1 DE 602005020891 D1 DE602005020891 D1 DE 602005020891D1 DE 602005020891 T DE602005020891 T DE 602005020891T DE 602005020891 T DE602005020891 T DE 602005020891T DE 602005020891 D1 DE602005020891 D1 DE 602005020891D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- lithographic apparatus
- lithographic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/001,082 US7161654B2 (en) | 2004-12-02 | 2004-12-02 | Lithographic apparatus and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005020891D1 true DE602005020891D1 (de) | 2010-06-10 |
Family
ID=35698857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005020891T Active DE602005020891D1 (de) | 2004-12-02 | 2005-11-22 | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
Country Status (8)
Country | Link |
---|---|
US (3) | US7161654B2 (de) |
EP (1) | EP1666973B1 (de) |
JP (2) | JP2006165550A (de) |
KR (1) | KR100729243B1 (de) |
CN (2) | CN1782886B (de) |
DE (1) | DE602005020891D1 (de) |
SG (2) | SG122937A1 (de) |
TW (1) | TWI311693B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4650413B2 (ja) * | 2003-04-10 | 2011-03-16 | 株式会社ニコン | 液浸リソグフラフィ装置用の移送領域を含む環境システム |
SG2012050829A (en) * | 2003-04-10 | 2015-07-30 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
KR101851511B1 (ko) | 2004-03-25 | 2018-04-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005122221A1 (ja) * | 2004-06-10 | 2005-12-22 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
TWI417940B (zh) * | 2004-09-17 | 2013-12-01 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
US7161654B2 (en) * | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1036253A1 (nl) * | 2007-12-10 | 2009-06-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
SG159467A1 (en) * | 2008-09-02 | 2010-03-30 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method |
EP2221669A3 (de) * | 2009-02-19 | 2011-02-09 | ASML Netherlands B.V. | Lithografische Vorrichtung, Verfahren zum Steuern der Vorrichtung und Verfahren zur Herstellung eines Artikels |
NL2004102A (en) * | 2009-02-25 | 2010-08-26 | Asml Holding Nv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
NL2004547A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | An immersion lithographic apparatus and a device manufacturing method. |
US20130255861A1 (en) * | 2012-03-30 | 2013-10-03 | Uwe Schneider | Apparatuses and Methods for Making Absorbent Articles |
CN113156772A (zh) * | 2016-09-12 | 2021-07-23 | Asml荷兰有限公司 | 用于光刻设备的流体处理结构及浸没光刻设备 |
Family Cites Families (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE224448C (de) | ||||
DE242880C (de) | ||||
DE221563C (de) | ||||
DE206607C (de) | ||||
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
ATE1462T1 (de) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08115867A (ja) * | 1994-10-18 | 1996-05-07 | Hitachi Ltd | レジスト塗布装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US5900345A (en) * | 1997-10-06 | 1999-05-04 | Kodak Polychrome Graphics, Llc | Surfactant in precoat for lithographic plates |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (de) | 1997-12-12 | 2005-03-02 | Nikon Corp | Verfahren zur projektionsbelichtung und projektionsausrichteinrichtung |
JPH11204406A (ja) * | 1998-01-14 | 1999-07-30 | Nikon Corp | 位置決め装置、位置決め方法および露光装置 |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
US6454030B1 (en) * | 1999-01-25 | 2002-09-24 | Baker Hughes Incorporated | Drill bits and other articles of manufacture including a layer-manufactured shell integrally secured to a cast structure and methods of fabricating same |
TWI242111B (en) | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001272604A (ja) | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
JP2002357641A (ja) | 2001-06-04 | 2002-12-13 | Rohm Co Ltd | 半導体装置 |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6897941B2 (en) | 2001-11-07 | 2005-05-24 | Applied Materials, Inc. | Optical spot grid array printer |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
JP2004098563A (ja) * | 2002-09-11 | 2004-04-02 | Magu Planning:Kk | ハガキ |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
CN1717776A (zh) | 2002-12-10 | 2006-01-04 | 株式会社尼康 | 光学元件及使用该光学元件的投影曝光装置 |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1429190B1 (de) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Belichtungsapparat und -verfahren |
KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
EP1571697A4 (de) | 2002-12-10 | 2007-07-04 | Nikon Corp | Belichtungssystem und bauelementeherstellungsverfahren |
WO2004053953A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
EP1732075A3 (de) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Verfahren und Vorrichtung zur Punktbestrahlung auf einer Schicht |
JP4364805B2 (ja) | 2002-12-19 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上にスポットを照射する方法及び装置 |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
JP4352930B2 (ja) * | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
JP4902201B2 (ja) * | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
JP4428115B2 (ja) | 2003-04-11 | 2010-03-10 | 株式会社ニコン | 液浸リソグラフィシステム |
EP1477856A1 (de) | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1494079B1 (de) | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographischer Apparat |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
CN102944981A (zh) * | 2003-07-09 | 2013-02-27 | 株式会社尼康 | 曝光装置、器件制造方法 |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005071717A1 (ja) * | 2004-01-26 | 2005-08-04 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2006060016A (ja) * | 2004-08-20 | 2006-03-02 | Canon Inc | 流体給排装置及びそれを有する露光装置 |
US7133114B2 (en) * | 2004-09-20 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7161654B2 (en) * | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-12-02 US US11/001,082 patent/US7161654B2/en not_active Expired - Fee Related
-
2005
- 2005-11-21 TW TW094140861A patent/TWI311693B/zh not_active IP Right Cessation
- 2005-11-22 DE DE602005020891T patent/DE602005020891D1/de active Active
- 2005-11-22 EP EP05257182A patent/EP1666973B1/de not_active Not-in-force
- 2005-11-30 SG SG200507707A patent/SG122937A1/en unknown
- 2005-11-30 SG SG200804223-6A patent/SG143284A1/en unknown
- 2005-12-01 JP JP2005347652A patent/JP2006165550A/ja active Pending
- 2005-12-01 CN CN2005101288233A patent/CN1782886B/zh not_active Expired - Fee Related
- 2005-12-01 CN CN2008100814428A patent/CN101241316B/zh not_active Expired - Fee Related
- 2005-12-01 KR KR1020050116151A patent/KR100729243B1/ko not_active IP Right Cessation
-
2006
- 2006-09-21 US US11/524,262 patent/US7812924B2/en not_active Expired - Fee Related
-
2009
- 2009-04-07 JP JP2009093214A patent/JP2009188421A/ja not_active Ceased
-
2010
- 2010-09-15 US US12/882,886 patent/US20110001944A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060119807A1 (en) | 2006-06-08 |
CN1782886B (zh) | 2010-08-25 |
EP1666973A1 (de) | 2006-06-07 |
TWI311693B (en) | 2009-07-01 |
KR100729243B1 (ko) | 2007-06-15 |
SG143284A1 (en) | 2008-06-27 |
EP1666973B1 (de) | 2010-04-28 |
KR20060061899A (ko) | 2006-06-08 |
CN101241316A (zh) | 2008-08-13 |
CN1782886A (zh) | 2006-06-07 |
US7161654B2 (en) | 2007-01-09 |
JP2006165550A (ja) | 2006-06-22 |
US7812924B2 (en) | 2010-10-12 |
SG122937A1 (en) | 2006-06-29 |
TW200622514A (en) | 2006-07-01 |
JP2009188421A (ja) | 2009-08-20 |
CN101241316B (zh) | 2012-07-04 |
US20070013886A1 (en) | 2007-01-18 |
US20110001944A1 (en) | 2011-01-06 |
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