DE112004000578B4 - Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements - Google Patents

Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements Download PDF

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Publication number
DE112004000578B4
DE112004000578B4 DE112004000578T DE112004000578T DE112004000578B4 DE 112004000578 B4 DE112004000578 B4 DE 112004000578B4 DE 112004000578 T DE112004000578 T DE 112004000578T DE 112004000578 T DE112004000578 T DE 112004000578T DE 112004000578 B4 DE112004000578 B4 DE 112004000578B4
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Prior art keywords
gate
layer
dielectric layer
etching
dielectric
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Expired - Lifetime
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DE112004000578T
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German (de)
English (en)
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DE112004000578T5 (de
Inventor
Bin Cupertino Yu
Haihong Milpitas Wang
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112004000578T 2003-04-03 2004-03-30 Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements Expired - Lifetime DE112004000578B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/405,342 US6764884B1 (en) 2003-04-03 2003-04-03 Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
US10/405,342 2003-04-03
PCT/US2004/009669 WO2004093181A1 (en) 2003-04-03 2004-03-30 Method for forming a gate in a finfet device and thinning a fin in a channel region of the finfet device

Publications (2)

Publication Number Publication Date
DE112004000578T5 DE112004000578T5 (de) 2006-02-23
DE112004000578B4 true DE112004000578B4 (de) 2010-01-28

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DE112004000578T Expired - Lifetime DE112004000578B4 (de) 2003-04-03 2004-03-30 Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements

Country Status (8)

Country Link
US (1) US6764884B1 (enExample)
JP (1) JP5409997B2 (enExample)
KR (1) KR101079348B1 (enExample)
CN (1) CN100413039C (enExample)
DE (1) DE112004000578B4 (enExample)
GB (1) GB2417134B (enExample)
TW (1) TWI337392B (enExample)
WO (1) WO2004093181A1 (enExample)

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DE112004000578T5 (de) 2006-02-23
CN100413039C (zh) 2008-08-20
US6764884B1 (en) 2004-07-20
GB2417134A (en) 2006-02-15
KR101079348B1 (ko) 2011-11-04
KR20050119679A (ko) 2005-12-21
TWI337392B (en) 2011-02-11
CN1771589A (zh) 2006-05-10
GB0518840D0 (en) 2005-10-26
JP2006522486A (ja) 2006-09-28
JP5409997B2 (ja) 2014-02-05
WO2004093181A1 (en) 2004-10-28
TW200425425A (en) 2004-11-16

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