CN100413039C - 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 - Google Patents

形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 Download PDF

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CN100413039C
CN100413039C CNB2004800093091A CN200480009309A CN100413039C CN 100413039 C CN100413039 C CN 100413039C CN B2004800093091 A CNB2004800093091 A CN B2004800093091A CN 200480009309 A CN200480009309 A CN 200480009309A CN 100413039 C CN100413039 C CN 100413039C
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fin
layer
dielectric layer
gate
grid
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CN1771589A (zh
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俞斌
汪海宏
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2004800093091A 2003-04-03 2004-03-30 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 Expired - Lifetime CN100413039C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/405,342 US6764884B1 (en) 2003-04-03 2003-04-03 Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
US10/405,342 2003-04-03

Publications (2)

Publication Number Publication Date
CN1771589A CN1771589A (zh) 2006-05-10
CN100413039C true CN100413039C (zh) 2008-08-20

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US (1) US6764884B1 (enExample)
JP (1) JP5409997B2 (enExample)
KR (1) KR101079348B1 (enExample)
CN (1) CN100413039C (enExample)
DE (1) DE112004000578B4 (enExample)
GB (1) GB2417134B (enExample)
TW (1) TWI337392B (enExample)
WO (1) WO2004093181A1 (enExample)

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CN104637818A (zh) * 2013-11-14 2015-05-20 国际商业机器公司 用于制造鳍片场效应晶体管器件的方法和鳍片场效应晶体管器件

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