JP5409997B2 - ＦｉｎＦＥＴデバイス中にゲートを形成する方法、および半導体デバイスの製造方法 - Google Patents

ＦｉｎＦＥＴデバイス中にゲートを形成する方法、および半導体デバイスの製造方法 Download PDF

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JP5409997B2
JP5409997B2 JP2006509467A JP2006509467A JP5409997B2 JP 5409997 B2 JP5409997 B2 JP 5409997B2 JP 2006509467 A JP2006509467 A JP 2006509467A JP 2006509467 A JP2006509467 A JP 2006509467A JP 5409997 B2 JP5409997 B2 JP 5409997B2
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fin
gate
insulating layer
layer
etching
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JP2006522486A5 (enExample
JP2006522486A (ja
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ユ ビン
ワン ハイホン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006509467A 2003-04-03 2004-03-30 ＦｉｎＦＥＴデバイス中にゲートを形成する方法、および半導体デバイスの製造方法 Expired - Lifetime JP5409997B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/405,342 US6764884B1 (en) 2003-04-03 2003-04-03 Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
US10/405,342 2003-04-03
PCT/US2004/009669 WO2004093181A1 (en) 2003-04-03 2004-03-30 Method for forming a gate in a finfet device and thinning a fin in a channel region of the finfet device

Publications (3)

Publication Number Publication Date
JP2006522486A JP2006522486A (ja) 2006-09-28
JP2006522486A5 JP2006522486A5 (enExample) 2012-08-09
JP5409997B2 true JP5409997B2 (ja) 2014-02-05

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Country Link
US (1) US6764884B1 (enExample)
JP (1) JP5409997B2 (enExample)
KR (1) KR101079348B1 (enExample)
CN (1) CN100413039C (enExample)
DE (1) DE112004000578B4 (enExample)
GB (1) GB2417134B (enExample)
TW (1) TWI337392B (enExample)
WO (1) WO2004093181A1 (enExample)

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DE112004000578T5 (de) 2006-02-23
CN100413039C (zh) 2008-08-20
DE112004000578B4 (de) 2010-01-28
US6764884B1 (en) 2004-07-20
GB2417134A (en) 2006-02-15
KR101079348B1 (ko) 2011-11-04
KR20050119679A (ko) 2005-12-21
TWI337392B (en) 2011-02-11
CN1771589A (zh) 2006-05-10
GB0518840D0 (en) 2005-10-26
JP2006522486A (ja) 2006-09-28
WO2004093181A1 (en) 2004-10-28
TW200425425A (en) 2004-11-16

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