KR101079348B1 - ＦｉｎＦＥＴ 디바이스에 게이트를 형성하고 ＦｉｎＦＥＴ디바이스의 채널 영역의 핀을 가늘게 하는 방법 - Google Patents

ＦｉｎＦＥＴ 디바이스에 게이트를 형성하고 ＦｉｎＦＥＴ디바이스의 채널 영역의 핀을 가늘게 하는 방법 Download PDF

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KR101079348B1
KR101079348B1 KR1020057018754A KR20057018754A KR101079348B1 KR 101079348 B1 KR101079348 B1 KR 101079348B1 KR 1020057018754 A KR1020057018754 A KR 1020057018754A KR 20057018754 A KR20057018754 A KR 20057018754A KR 101079348 B1 KR101079348 B1 KR 101079348B1
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gate
layer
fin
dielectric layer
forming
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KR20050119679A (ko
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빈 유
하이홍 왕
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020057018754A 2003-04-03 2004-03-30 ＦｉｎＦＥＴ 디바이스에 게이트를 형성하고 ＦｉｎＦＥＴ디바이스의 채널 영역의 핀을 가늘게 하는 방법 Expired - Lifetime KR101079348B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/405,342 2003-04-03
US10/405,342 US6764884B1 (en) 2003-04-03 2003-04-03 Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET device
PCT/US2004/009669 WO2004093181A1 (en) 2003-04-03 2004-03-30 Method for forming a gate in a finfet device and thinning a fin in a channel region of the finfet device

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KR20050119679A KR20050119679A (ko) 2005-12-21
KR101079348B1 true KR101079348B1 (ko) 2011-11-04

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US (1) US6764884B1 (enExample)
JP (1) JP5409997B2 (enExample)
KR (1) KR101079348B1 (enExample)
CN (1) CN100413039C (enExample)
DE (1) DE112004000578B4 (enExample)
GB (1) GB2417134B (enExample)
TW (1) TWI337392B (enExample)
WO (1) WO2004093181A1 (enExample)

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TWI337392B (en) 2011-02-11
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TW200425425A (en) 2004-11-16
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KR20050119679A (ko) 2005-12-21
DE112004000578B4 (de) 2010-01-28
WO2004093181A1 (en) 2004-10-28
CN100413039C (zh) 2008-08-20
US6764884B1 (en) 2004-07-20
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