DE102016226235A8 - Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung - Google Patents

Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung Download PDF

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Publication number
DE102016226235A8
DE102016226235A8 DE102016226235.1A DE102016226235A DE102016226235A8 DE 102016226235 A8 DE102016226235 A8 DE 102016226235A8 DE 102016226235 A DE102016226235 A DE 102016226235A DE 102016226235 A8 DE102016226235 A8 DE 102016226235A8
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Prior art keywords
semiconductor device
silicon carbide
carbide semiconductor
producing
silicon
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DE102016226235.1A
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DE102016226235A1 (de
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Setsuko Wakimoto
Masanobu IWAYA
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of DE102016226235A8 publication Critical patent/DE102016226235A8/de
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
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    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
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    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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    • H01L29/42356—Disposition, e.g. buried gate electrode
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    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
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  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
DE102016226235.1A 2016-02-01 2016-12-27 Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer stlsziumcarbid-halbleitervorrichtung Pending DE102016226235A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-017568 2016-02-01
JP2016017568 2016-02-01
JP2016-165172 2016-08-25
JP2016165172A JP6115678B1 (ja) 2016-02-01 2016-08-25 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

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DE102016226235A1 DE102016226235A1 (de) 2017-08-17
DE102016226235A8 true DE102016226235A8 (de) 2017-10-05

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US (3) US9997358B2 (de)
JP (3) JP6115678B1 (de)
CN (1) CN107026205B (de)
DE (1) DE102016226235A1 (de)

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DE102016226237A1 (de) * 2016-02-01 2017-08-03 Fuji Electric Co., Ltd. Siliziumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliziumcarbid-halbleitervorrichtung
JP6115678B1 (ja) 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6560141B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP6560142B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP6711100B2 (ja) * 2016-04-15 2020-06-17 富士電機株式会社 炭化珪素半導体装置、炭化珪素半導体装置の製造方法および炭化珪素半導体装置の制御方法
JP6801323B2 (ja) * 2016-09-14 2020-12-16 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7081087B2 (ja) * 2017-06-02 2022-06-07 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
JP6972680B2 (ja) * 2017-06-09 2021-11-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6962063B2 (ja) * 2017-08-23 2021-11-05 富士電機株式会社 半導体装置及び半導体装置の製造方法
US10693002B2 (en) * 2017-09-07 2020-06-23 Fuji Electric Co., Ltd. Semiconductor device
JP7017733B2 (ja) * 2017-09-07 2022-02-09 国立研究開発法人産業技術総合研究所 半導体装置および半導体装置の製造方法
JP6926869B2 (ja) * 2017-09-13 2021-08-25 富士電機株式会社 半導体装置
JP7247514B2 (ja) * 2017-11-09 2023-03-29 富士電機株式会社 半導体装置及びその製造方法
JP7029711B2 (ja) * 2017-11-29 2022-03-04 国立研究開発法人産業技術総合研究所 半導体装置
JP7006280B2 (ja) * 2018-01-09 2022-01-24 富士電機株式会社 半導体装置
JP6981890B2 (ja) * 2018-01-29 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
US10608079B2 (en) * 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
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