DE112017000938T8 - Verfahren zum Reinigen eines Halbleiterwafers - Google Patents

Verfahren zum Reinigen eines Halbleiterwafers Download PDF

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Publication number
DE112017000938T8
DE112017000938T8 DE112017000938.3T DE112017000938T DE112017000938T8 DE 112017000938 T8 DE112017000938 T8 DE 112017000938T8 DE 112017000938 T DE112017000938 T DE 112017000938T DE 112017000938 T8 DE112017000938 T8 DE 112017000938T8
Authority
DE
Germany
Prior art keywords
cleaning
semiconductor wafer
wafer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112017000938.3T
Other languages
English (en)
Other versions
DE112017000938T5 (de
Inventor
Susumu SARASHINA
Tomofumi Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE112017000938T5 publication Critical patent/DE112017000938T5/de
Application granted granted Critical
Publication of DE112017000938T8 publication Critical patent/DE112017000938T8/de
Active legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE112017000938.3T 2016-03-18 2017-02-22 Verfahren zum Reinigen eines Halbleiterwafers Active DE112017000938T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-055294 2016-03-18
JP2016055294A JP6424183B2 (ja) 2016-03-18 2016-03-18 半導体ウェーハの洗浄方法
PCT/JP2017/006512 WO2017159246A1 (ja) 2016-03-18 2017-02-22 半導体ウェーハの洗浄方法

Publications (2)

Publication Number Publication Date
DE112017000938T5 DE112017000938T5 (de) 2019-01-03
DE112017000938T8 true DE112017000938T8 (de) 2019-03-07

Family

ID=59850723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112017000938.3T Active DE112017000938T8 (de) 2016-03-18 2017-02-22 Verfahren zum Reinigen eines Halbleiterwafers

Country Status (8)

Country Link
US (1) US10692714B2 (de)
JP (1) JP6424183B2 (de)
KR (1) KR102474557B1 (de)
CN (1) CN108701603A (de)
DE (1) DE112017000938T8 (de)
SG (1) SG11201807140QA (de)
TW (1) TWI767902B (de)
WO (1) WO2017159246A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6424183B2 (ja) * 2016-03-18 2018-11-14 信越半導体株式会社 半導体ウェーハの洗浄方法
JP7436304B2 (ja) 2020-06-30 2024-02-21 三和シヤッター工業株式会社 簡易組み立て型検体採取用ブース
JP7411818B2 (ja) * 2020-07-02 2024-01-11 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造の処理方法及び形成方法
CN113889405A (zh) 2020-07-02 2022-01-04 长鑫存储技术有限公司 半导体结构的处理方法及形成方法
CN112452906A (zh) * 2020-09-29 2021-03-09 威科赛乐微电子股份有限公司 一种研磨后晶片的清洗方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643814B2 (ja) * 1993-12-24 1997-08-20 日本電気株式会社 半導体基板の洗浄方法
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
JPH11283947A (ja) * 1998-03-27 1999-10-15 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
TW426874B (en) * 1998-10-14 2001-03-21 United Microelectronics Corp Method for cleaning a semiconductor wafer
JP2001053016A (ja) * 1999-08-04 2001-02-23 Toshiba Corp 半導体装置の製造方法
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6589356B1 (en) * 2000-09-29 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd Method for cleaning a silicon-based substrate without NH4OH vapor damage
US6503333B2 (en) * 2000-11-30 2003-01-07 Taiwan Semiconductor Manufacturing Company, Ltd Method for cleaning semiconductor wafers with ozone-containing solvent
JP2002261062A (ja) * 2001-03-05 2002-09-13 Texas Instr Japan Ltd 半導体ウェハ上の粒子を除去する方法及び装置
TW512445B (en) * 2001-04-30 2002-12-01 Macronix Int Co Ltd Method for cleaning semiconductor wafer
US20030106572A1 (en) * 2001-12-12 2003-06-12 Hirohiko Nishiki System and method for ozonated water cleaning
TW533497B (en) * 2002-04-30 2003-05-21 Silicon Integrated Sys Corp Cleaning method of wet cleaning device
CN1464533A (zh) * 2002-06-26 2003-12-31 矽统科技股份有限公司 湿式洗净装置
US7071077B2 (en) * 2003-03-26 2006-07-04 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for preparing a bonding surface of a semiconductor layer of a wafer
JP4179098B2 (ja) 2003-08-13 2008-11-12 株式会社Ｓｕｍｃｏ 半導体ウェーハの洗浄方法
JP2005210075A (ja) * 2003-12-25 2005-08-04 Matsushita Electric Ind Co Ltd 半導体ウエハの洗浄方法
KR20050065312A (ko) * 2003-12-25 2005-06-29 마츠시타 덴끼 산교 가부시키가이샤 반도체웨이퍼의 세정방법
US20050177267A1 (en) * 2004-02-10 2005-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Tank scheduling optimization for replicated chemical in a semiconductor manufacturing wet bench
JP5789400B2 (ja) * 2011-04-12 2015-10-07 東京エレクトロン株式会社 液処理方法及び液処理装置
US9561982B2 (en) * 2013-04-30 2017-02-07 Corning Incorporated Method of cleaning glass substrates
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法
JP6424183B2 (ja) * 2016-03-18 2018-11-14 信越半導体株式会社 半導体ウェーハの洗浄方法

Also Published As

Publication number Publication date
KR102474557B1 (ko) 2022-12-06
JP2017168785A (ja) 2017-09-21
DE112017000938T5 (de) 2019-01-03
JP6424183B2 (ja) 2018-11-14
TW201801167A (zh) 2018-01-01
CN108701603A (zh) 2018-10-23
US20190066999A1 (en) 2019-02-28
KR20180125473A (ko) 2018-11-23
TWI767902B (zh) 2022-06-21
WO2017159246A1 (ja) 2017-09-21
SG11201807140QA (en) 2018-09-27
US10692714B2 (en) 2020-06-23

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021304000

Ipc: H01L0021302000