DE112016002148A5 - Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen - Google Patents

Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen Download PDF

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Publication number
DE112016002148A5
DE112016002148A5 DE112016002148.8T DE112016002148T DE112016002148A5 DE 112016002148 A5 DE112016002148 A5 DE 112016002148A5 DE 112016002148 T DE112016002148 T DE 112016002148T DE 112016002148 A5 DE112016002148 A5 DE 112016002148A5
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Germany
Prior art keywords
leadframe
machining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112016002148.8T
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English (en)
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DE112016002148B4 (de
Inventor
Daniel Richter
Brendan Holland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of DE112016002148A5 publication Critical patent/DE112016002148A5/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
DE112016002148.8T 2015-05-13 2016-05-11 Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen Active DE112016002148B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015107515.6 2015-05-13
DE102015107515.6A DE102015107515A1 (de) 2015-05-13 2015-05-13 Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
PCT/EP2016/060569 WO2016180883A1 (de) 2015-05-13 2016-05-11 Verfahren zum bearbeiten eines leiterrahmens und leiterrahmen

Publications (2)

Publication Number Publication Date
DE112016002148A5 true DE112016002148A5 (de) 2018-01-18
DE112016002148B4 DE112016002148B4 (de) 2022-05-25

Family

ID=55953173

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015107515.6A Withdrawn DE102015107515A1 (de) 2015-05-13 2015-05-13 Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
DE112016002148.8T Active DE112016002148B4 (de) 2015-05-13 2016-05-11 Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015107515.6A Withdrawn DE102015107515A1 (de) 2015-05-13 2015-05-13 Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen

Country Status (6)

Country Link
US (1) US10192756B2 (de)
JP (1) JP2018520500A (de)
CN (1) CN107567659B (de)
DE (2) DE102015107515A1 (de)
TW (1) TWI609511B (de)
WO (1) WO2016180883A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106876375A (zh) * 2017-03-28 2017-06-20 山东晶泰星光电科技有限公司 一种集成式rgb‑led显示屏
US10872848B2 (en) * 2018-10-25 2020-12-22 Infineon Technologies Ag Semiconductor package with leadframe interconnection structure
JP7337590B2 (ja) * 2019-08-05 2023-09-04 ローム株式会社 半導体発光装置
IT202100017231A1 (it) * 2021-06-30 2022-12-30 St Microelectronics Srl Procedimento per fabbricare substrati per dispositivi a semiconduttore, substrato e dispositivo a semiconduttore corrispondenti
DE102022120594A1 (de) 2022-08-16 2024-02-22 Ams-Osram International Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls

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Publication number Priority date Publication date Assignee Title
GB2178894B (en) 1985-08-06 1988-07-27 Gen Electric Co Plc Preparation of fragile devices
DE102008024704A1 (de) * 2008-04-17 2009-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
JP5010716B2 (ja) 2010-01-29 2012-08-29 株式会社東芝 Ｌｅｄパッケージ
DE102010021791A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds
JP2012019062A (ja) * 2010-07-08 2012-01-26 Shin Etsu Chem Co Ltd 発光半導体装置、実装基板及びそれらの製造方法
TWI420630B (zh) * 2010-09-14 2013-12-21 Advanced Semiconductor Eng 半導體封裝結構與半導體封裝製程
US9240395B2 (en) * 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
JP2012124249A (ja) * 2010-12-07 2012-06-28 Toshiba Corp Ｌｅｄパッケージ及びその製造方法
WO2012117974A1 (ja) * 2011-02-28 2012-09-07 日亜化学工業株式会社 発光装置
JP2012216654A (ja) * 2011-03-31 2012-11-08 Sanken Electric Co Ltd 樹脂成形フレーム及び光半導体装置
US8643166B2 (en) * 2011-12-15 2014-02-04 Stats Chippac Ltd. Integrated circuit packaging system with leads and method of manufacturing thereof
DE102011056700A1 (de) 2011-12-20 2013-06-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil
DE102011056708A1 (de) * 2011-12-20 2013-06-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil
JP6015004B2 (ja) 2012-01-05 2016-10-26 日亜化学工業株式会社 発光装置及び発光装置の製造方法
CN103367619B (zh) * 2012-03-30 2015-12-02 光宝电子(广州)有限公司 金属支架结构及发光二极管结构
CN103367344B (zh) 2012-04-11 2016-04-27 光宝电子(广州)有限公司 连板料片、发光二极管封装品及发光二极管灯条
US9059379B2 (en) * 2012-10-29 2015-06-16 Advanced Semiconductor Engineering, Inc. Light-emitting semiconductor packages and related methods
US9012268B2 (en) 2013-06-28 2015-04-21 Stmicroelectronics, Inc. Leadless packages and method of manufacturing same
DE102013215650B4 (de) 2013-08-08 2021-10-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102013224581A1 (de) * 2013-11-29 2015-06-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP6176101B2 (ja) * 2013-12-17 2017-08-09 日亜化学工業株式会社 樹脂パッケージ及び発光装置

Also Published As

Publication number Publication date
US10192756B2 (en) 2019-01-29
CN107567659B (zh) 2020-07-14
TW201703296A (zh) 2017-01-16
JP2018520500A (ja) 2018-07-26
DE112016002148B4 (de) 2022-05-25
WO2016180883A1 (de) 2016-11-17
DE102015107515A1 (de) 2016-11-17
TWI609511B (zh) 2017-12-21
US20180096861A1 (en) 2018-04-05
CN107567659A (zh) 2018-01-09

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