WO2016180883A1 - Verfahren zum bearbeiten eines leiterrahmens und leiterrahmen - Google Patents
Verfahren zum bearbeiten eines leiterrahmens und leiterrahmen Download PDFInfo
- Publication number
- WO2016180883A1 WO2016180883A1 PCT/EP2016/060569 EP2016060569W WO2016180883A1 WO 2016180883 A1 WO2016180883 A1 WO 2016180883A1 EP 2016060569 W EP2016060569 W EP 2016060569W WO 2016180883 A1 WO2016180883 A1 WO 2016180883A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrically conductive
- housing
- contact portion
- lead frame
- recess
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Definitions
- the invention relates to a method for processing a
- Leadframe a lead frame and an optoelectronic lighting device.
- the object underlying the invention can be sailed ⁇ hen to provide an efficient concept that enables efficient processing of a lead frame and an efficiently processed leadframe and efficiently Herge ⁇ presented optoelectronic lighting device.
- a method of processing a lead frame having at least one electrically conductive contact portion comprising the following steps:
- a lead frame at least partially embedding housing frame exhibiting housing from egg ⁇ nem housing material, wherein the forming of the housing holds an introduction of body material in the recess environmentally, so that between the first and second electrically conductive surface contact portion, a means of in the Is formed recess formed housing material formed housing frame portion to mechanically stabilize the first and the second electrically conductive bottom contact portion by means of the housing frame portion.
- a leadframe comprising:
- At least one electrically conductive contact section wherein a depression is formed in the at least one electrically conductive contact section
- said lead frame is at least partially embedded in a Ge ⁇ houses mimic of a housing of a casing material
- the housing frame comprises a housing frame portion which is formed by means of a introduced between the first and the second electrically conductive lower contact portion in the recess housing material to mechanically stabilize the first and the second electrically conductive lower contact portion by means of the Gescousahmenabab-section.
- Lighting device comprising an optoelectronic niche semiconductor device and the conductor ⁇ frame, wherein the semiconductor device is disposed on the one of the first and second electrically conductive lower contact portion, wherein an electrically conductive connection between the optoelectronic semiconductor device and the ⁇ on of the first and second electrically conductive lower contact portion is formed ,
- the invention therefore includes, in particular and among other things, the idea of forming a depression in the at least one electrically conductive contact section in a machining process of a leadframe.
- the technical advantage is achieved that housing material can be introduced into this depression when forming the housing frame .
- This can then advantageously form a housing frame section from the introduced housing material.
- This advantageously effects mechanical stabilization of the first and second electrically conductive subcontact sections.
- an efficient processing of the leadframe is advantageously made possible.
- this advantageously makes possible miniaturization.
- this has the technical advantage that a simplified Lötpaddesign can be realized.
- a lead frame according to the present invention may also be referred to as a leadframe.
- a first lead frame according to the present invention may also be referred to as a leadframe.
- electrically conductive subcontact portion may in particular be as a first electrically conductive leadframe section be ⁇ draws.
- a second electrically conductive bottom contact portion may be referred to as a second electrically conductive lead frame portion.
- a contact section (ie the electrically conductive contact section, the first electrically conductive lower contact section and the second electrically conductive lower contact section) may be referred to in particular as a solder pad.
- the recess thus causes, in particular, that the electrically conductive contact section is subdivided into a first electrically conductive lower contact section and into a second electrically conductive lower contact section.
- the formation of the depression does not yet cause the first and the second electrically conductive subcontact section to be separated from one another. They are still on the Vertie ⁇ fung each other. This means that the first electrically conductive lower contact section and the second electrically conductive lower contact section are still electrically connected to one another after the recess has been formed. Because the recess has in particular a bottom portion, which is formed by means of the material of the electrically conductive justifyab ⁇ section . In particular, the recess has a bottom over which this electrically conductive connection is made.
- the formation of the recess comprises in particular a removal of material of the lead frame. That means in particular that a recess is formed in the lead frame. That means in particular that the depression may also be referred to as a Ausspa ⁇ tion or as a material recess.
- the depression extends continuously from one edge of the electrically conductive contact section to a further edge of the electrically conductive contact section.
- the further edge is in particular arranged opposite the one edge.
- the further edge meets in particular with one edge in a corner on each other.
- the further edge is thus formed in particular with the one edge in a corner on ⁇ each other.
- An edge can also be called an edge.
- forming the housing comprises a molding process. That is, the housing is formed by a molding process.
- a molding process can also be called a molding process.
- the housing can be formed according to an embodiment by means of a potting process, in particular by means of a Spritzgusspro ⁇ zesses.
- This means in particular that the forming of the housing preferably comprises a casting process, in particular an injection molding process.
- the housing material comprises, for example, one or more of the following materials or is formed of one or more of the following materials: silicone (s), epoxy (s), polyphthalamide (s) (PPA), polycyclohexylenedimethylene terephthalate (PCT).
- the leadframe according to one embodiment comprises an electrically conductive metal, for example copper, or is formed from an electrically conductive metal, for example copper.
- the contact portion of egg nem electrically conductive metal in particular copper, formed or comprising such a metal, in particular Kup ⁇ fer.
- the forming of the housing frame section forms an outside of the
- Recess arranged adhesive barrier portion comprises, so that the housing frame portion comprises an outside the Ver ⁇ depression arranged adhesive barrier portion.
- an adhesive barrier can be produced efficiently.
- an optoelectronic semiconductor component is arranged on the first electrically conductive bottom contact section or the second electrically conductive bottom contact section. This in particular by means of an adhesive. That is to say in particular ⁇ sondere that according to one embodiment, the semiconductor assembly ⁇ part is adhered to the first electrically conductive surface contact portion or the second electrically conductive surface contact portion by an adhesive.
- the adhesive ⁇ barrier so the adhesive barrier portion is prevented in an advantageous way that this applied adhesive ver ⁇ running or flowing in an area of the lead frame, in which the adhesive will not flow.
- the Ge ⁇ houses mimic portion comprising the adhesive barrier portion may have a mushroom shape, for example, in cross-section.
- a mushroom shape has in particular an elongate section, in this case the housing frame section between the first and the second subcontact section, that is to say the housing material introduced into the recess.
- the mushroom shape has in particular dere a subsequent to the elongated portion arcuate portion, ie the Klebstoffbarriereab ⁇ section.
- the technical advantage is achieved that an efficient mechanical stabilization of the plurality of electrically conductive contact portions can be achieved.
- the mechanical stabilizing element causes two contact sections to be connected to one another.
- the at least one mechanical Sta ⁇ bilmaschineselement already be formed during manufacture of the lead frame. That is, that the mechanical stability ⁇ l Deutschenselement is formed integrally with the lead frame.
- a plurality of mechanical Stabili ⁇ stechniksetti are provided which connect a plurality of electrically conductive contact portions to each other.
- a plurality of electrically conductive contact portions are provided.
- the lead frame thus comprises, for example, a plurality of electrically conductive contact sections, for example four or six contact sections.
- Embodiments that are made in connection with a lead frame comprising an electrically conductive contact section apply analogously to embodiments comprising a lead frame comprising a plurality of electrically conductive contact sections and vice versa. That means in particular that in the case of multiple contact sections they are comprising a contact portion in accordance with machining ⁇ tet analogous to embodiments. So that means in particular that in the
- electrically conductive contact sections each have a is formed, so that in each case a first electrically lei ⁇ tender lower contact portion and a second electrically lei ⁇ tender lower contact portion are formed, which are delimited from each other by means of the respective recess.
- the step of forming the case frame also applies to the case of the plural contact portions.
- the at least one mechanical stabilization element is removed after the image of the housing.
- the removal comprises an etching.
- the technical advantage is achieved that the mechanical stabilization element can be removed efficiently.
- one or more anchoring elements is formed on an outer flank of the electrically conductive contact section, respectively.
- the anchoring element (the plural should always be read along and vice versa) is, for example, a projection formed on the outer flank of the electrically conductive contact section.
- An outer edge of the electrically conductive contact section in particular designates an edge of the electrically conductive contact section, which points away from the leadframe.
- an anchoring element Co ⁇ the plurality of anchoring elements is formed on an outer edge of the first electrically conductive lower contact portion .
- the anchoring element is, for example, a projection formed on the outer flank of the first electrically conductive subcontact section.
- An outer flank of the first electrically conductive lower contact section particularly designates an edge of the first electrically conductive lower contact portion, which faces away from the lead frame.
- an anchoring element Co ⁇ the plurality of anchoring elements is formed on an outer edge of the second electrically conductive lower contact portion .
- the anchoring element is for example a ⁇ formed on the outer edge of the second electrically conductive surface contact portion projection.
- an outer flank of the second electrically conductive subcontact section designates an edge of the second electrically conductive subcontact section, which points away from the leadframe.
- the lead frame has a
- first and second lower contact portion which is free of an anchoring element.
- the flanks of the corresponding subcontact section are free of protrusions.
- the following step is carried out: a separation of the first and the second electrically conductive Unterffy- section, so that the first and the second electrically lei ⁇ tende lower contact portion are electrically isolated from each other.
- the technical advantage is achieved that the first and the second electrically conductive Unterkon ⁇ clock section can be electrically isolated from each other.
- the electro-optical semi ⁇ conductor component of these two electrically conductive surface contact portions can be electrically contacted in an advantageous manner, so that the optoelectronic semiconductor device can be operated.
- a plurality of first and second electrically conductive subcontact sections are formed. det, wherein a plurality of the first and / or second electrically conductive lower contact sections each have a Ver ⁇ ank ceremoniesselement, wherein other of the first and / or second electrically conductive lower contact portions are free of an anchoring element.
- the above mentioned anchoring element effected in an advantageous manner an efficient anchoring of the entspre ⁇ sponding electrically conductive contact portion, respectively, of the corresponding first respectively second electrically conductive surface contact portion in a housing which is, for example, a casting compound, in particular an injection molding material is formed.
- the anchoring elements are encapsulated according to an embodiment when forming a housing, in particular encapsulated.
- First and / or second electrically conductive Untertitleab ⁇ sections which are free of an anchoring element, are preferably surrounded by first and / or second electrically conductive lower contact portions having an anchoring element.
- the first and / or second electrically conductive subcontact sections, which are free of an anchoring element are arranged in particular within the leadframe, whereas the first and / or the second
- electrically conductive lower contact sections which have an anchoring ⁇ tion element, for example, define an edge of the ladder ⁇ frame.
- the separation comprises etching.
- the formation of the depression comprises etching.
- the technical advantage in particular, is achieved that the recess can be formed efficiently.
- an area which is to remain free of an etching is provided with an etch protection, for example with an etch-protection layer, for example with a foil or, for example, with a lacquer.
- the etching comprises dry etching and / or wet etching.
- the technical advantage is achieved that an efficient etching can be carried out.
- the dry etching comprises a chlorination and / or wherein the wet etching comprises etching by means of HCl and FeCl.
- the electrically conductive contact portion is partially coated with a metal prior to forming the Ge ⁇ housing to form a metal coating, leaving an area to be etched free of the metal layer coating.
- the leadframe is produced by means of the method according to the invention.
- Embodiments relating to the leadframe result analogously from corresponding embodiments of the method and vice versa.
- Device features features of the lead frame or the optoelectronic light-emitting device
- method features method for processing a leadframe
- An optoelectronic semiconductor component is, according to an embodiment, a light-emitting diode, also called a light-emitting diode.
- a light-emitting diode is also referred to as "Light Emitting Diode (LED)".
- the LED is for
- Example an organic or an inorganic light emitting diode.
- the light-emitting diode is a Laserdio ⁇ de.
- the semiconductor device is formed according to one embodiment as a semiconductor chip. That means in particular that the light-emitting diode is preferably used as a light emitting diode chip, in particular ⁇ sondere as a laser chip, is formed.
- An optoelectronic semiconductor device comprises a light emitting surface. This means, in particular, that during operation of the semiconductor device, light is emitted by the light-emitting surface.
- Anstel ⁇ le or in addition to light can also be emitted electromagnetic radiation that is not in the visible range, so for example in the infrared or ultraviolet spectral range.
- the electrically conductive connection is a bonding wire.
- the first electrically conductive subcontact portion may be referred to, for example, as a solder pad.
- the second electrically conductive subcontact portion may be referred to, for example, as a solder pad.
- the electrically conductive subcontact portion may be referred to as a solder pad.
- an electrical contacting of the optoelectronic semiconductor component is effected or produced.
- the leadframe after removing the at least one stabilization ⁇ elements respectively after the separation of the first and the second electrically conductive bottom contact portion has a flat bottom.
- the wording "respectively” includes the Formu ⁇ -regulation "and / or”.
- 1 a lead frame
- 2 and 3 each have a lead frame in different views
- FIGS. 4 to 15 each show a leadframe in different views at different times in the method for processing a leadframe
- FIGS. 16-22 show the processed leadframe comprising a plurality of optoelectronic semiconductor components in different views
- FIGS. 23 and 24 each show an etching step
- Fig. 25 shows a flowchart of a method of processing a lead frame.
- soldering pads 103 each have a plurality of anchoring elements 105 in the form of projections. These anchoring elements 105 serve as anchoring of the soldering pads 103 in a housing (not shown). So that means that the anchoring ⁇ guide elements 105, the solder pads anchor in the housing 103rd Such a housing can, for example, by means of a potting ⁇ process, in particular an injection molding process, Herge ⁇ represents be.
- the solder pad with the reference numeral 107 has an unfavorable aspect ratio, insofar as this is a long, narrow solder pad. Therefore, in addition to the two anchors 105 at the top side of the soldering pad 107 relative to the plane of the paper, an anchoring section is still here Provided 109 to the lower relative to the plane of the paper side of the solder pads ⁇ 107, which extends the solder pad 107 so that an image formed on the anchoring portion 109 of anchor member 105 can anchor the solder pad 107 in the housing. Such additional anchoring section 109 leads to a Incr ⁇ th space, which then ultimately leads to larger components.
- FIG. 2 shows an RGBW component 201 in a plan view from above.
- FIG. 3 shows the component 201 of FIG. 2 in a plan view from below.
- the letters "R, G, B, W” stand for "red, green, blue, white”. That is, the component 201 can emit red light, green light, blue light, white light.
- This emission of different wavelengths is effected by a plurality of light-emitting diode chips 203 which are arranged on the soldering pads 103. That is to say, four light-emitting diode chips 203 are each arranged on a solder pad 103.
- the solder pad 103 thus acts as an electrode for electrical contacting of the corresponding LED chip 203.
- Another solder pad 103 is then provided as a counter ⁇ electrode, which is electrically connected to the LED chip 203 via a bonding wire.
- a temperature sensor 207 can also be located on a solder pad 103, which can also be electrically contacted with a further solder pad 103 via a bonding wire 205.
- the solder pads 103 are electrically isolated from each other. Depending on the electrical contact, the solder pads 103 thus form a cathode or an anode of the light emitting diode chips 203 Respek ⁇ tive contact an anode or cathode of the light emitting diode chip 203.
- the lead frame 101 is embedded in a housing 209, which may be prepared, for example by means of a molding process. As the views of the component 201 shown in FIGS. 2 and 3 show, each of the solder pads 103 must be anchored or embedded by itself in the housing 209. This means of Veran ⁇ k réellesetti 105. Thus, therefore, the anchoring elements 105 of the individual solder pads 103 must be taken individually in the housing 209 embedded. This leads to correspondingly large solder pads 103, even if the actual area required for the electrical contacting of the LED chip 203 does not have to be so large.
- FIG. 4 shows a leadframe 400 in an oblique plan view of an upper side of the leadframe 400.
- FIG. 5 shows a top view of the leadframe 400.
- FIG. 6 shows a plan view of the underside of the leadframe 400.
- the lead frame 400 includes a plurality of electrically conductive contact portions 401, which may also be referred to as electrically conductive conductor ⁇ frame sections.
- the contact portions 401 are, for example, made of copper or include copper gebil ⁇ det.
- the lead frame 400 includes six electrically conductive contact portions 401. In embodiments not shown, it may be provided that more or fewer than six electrically conductive contact portions 400 are provided.
- the electrically conductive contact sections 401 each have anchoring elements 403, which cause an anchoring of the electrically conductive contact sections 401 in a housing not yet produced.
- the electrically conductive contact portions 401 each have a top side 405 and the top 405 respectivelylie ⁇ constricting bottom 601.
- There are four stabilizing elements 407 are provided, in each case two stabilizing elements connect three of the six contact ⁇ sections 401 together. This stabilization ⁇ elements 407 cause mechanical stabilization of the individual electrically conductive contact portions 401 underei- Nander or against each other.
- FIGS. 7 to 9 respectively show the leadframe 400 at a later point in time in a method according to the invention for processing a leadframe, with reference to FIGS. 4 to 6.
- FIG. 7 6 is analogous to FIG. 4 is an oblique plan view of the top surface 405.
- FIG. 8 is similar to FIG. 5 is a plan view from above of the top 405.
- Fig. 9 shows ana ⁇ log to Fig. Is a plan view of bottom of the bottom 601.
- each of the electrically conductive contact portions 401 in a first electrically conductive Unterkon- contact portion 703 and in a second electrically conductive
- Subcontact section 705 divided. A first electrically conductive contact sub-portion 703 and a two ⁇ ter electrically conductive sub contact portion 705 so there are formed which are separated from each other by means of the recess 701.
- the two subcontact sections 703, 705 are thus still connected to each other by means of the recess 701.
- the depression 701 is etched.
- 50% of the thickness of the electrically conductive contact section 401 in the region of the depression 701 can be removed (also detached from this specific exemplary embodiment). How deep or ist ⁇ will carry material as much here, in particular a balance between a necessary stabilization of the lead frame 400 and mög ⁇ lichst much body material between the UnterANDab ⁇ cut 703 705th
- FIG. 9 shows that the rear side 601 is not structured or processed in the step of forming the recess 701.
- the back surface 601 remains unstructured as the recess 701 is formed.
- the housing 1001 is formed of a housing material, which may be, for example, a potting compound, for example silicone. This means, therefore, that the housing 1001 can be formed by means of a potting process, in particular an injection molding process, for example by means of dispensing or injection molding.
- the housing 1001 has a housing frame 1003.
- the Ge ⁇ houses imitate 1003 has a housing frame portion 1005th This housing frame portion 1005 is formed by, when forming the housing 1001, so for example in a
- housing material is introduced into the recess 701. That is to say, the housing frame section 1005 can be inserted into the recess 701 between the first electrically conductive lower contact portion 703 and the second electrically conductive contact portion 705 introduced housing material is formed.
- This housing frame section 1005 effects a mechanical stabilization of the first and the second electrically conductive lower contact section 703, 705.
- not every one of the first and second electrically conductive lower contact sections 703, 705 must have their own anchoring in an edge region of the housing 1001.
- the housing frame section 1005 is formed with an adhesive barrier section 1605, as can be seen in connection with FIG. 16.
- This adhesive barrier portion 1605 is formed outside the recess 701 and has a parabolic or circular shape, similar to a mushroom shape.
- the adhesive barrier section 1605 has the effect that an adhesive applied to the upper side 405 of the lower contact sections 703, 705 does not run.
- the mechanical stabilizing elements 407 are at least partially embedded in the housing frame section 1005.
- FIG. 13 to 15 respectively show the lead frame 400 at a later time in the method of processing a lead frame according to the present invention relative to the lead frame 400 shown in FIGS. 10 to 12.
- FIG. 13 shows a plan view obliquely from below to the bottom 601.
- 14 shows a top view of the lower contact sections 703, 705.
- FIG. 15 shows a plan view from below of the underside 601.
- the lead frame 400 is structured from its bottom 601.
- the first and second subcontact sections 703, 705 are separated from one another by, for example, etching away the recess 701, ie, etching away the bottom of the recess 701.
- the stabilizing elements 407 ent ⁇ be removed. This, for example, by means of an etching process.
- Reference numeral 1501 symbolically points to the depression 701, which is now removed and thus no longer present.
- the first electrically conductive lower contact portion 703 and the second electrically conductive lower contact portion 705 are caused to be electrically isolated from each other.
- Subcontact sections 703, 705 can thus be used for contacting an anode and a cathode of an optoelectronic semiconductor component.
- 16 to 22 each show an optoelectronic light ⁇ device 1701 in different views.
- Fig. 16 shows a view obliquely from below on the opto-electronic ⁇ light emitting device 1701, the light emitting device is shown cut off 1701.
- Fig. 17 shows a top view from above of the lighting device 1701.
- Fig. 18 shows a top view obliquely from above on the Leuchtvor ⁇ direction 1701.
- FIG. 19 shows a top view from above of the lighting device 1701.
- Fig. 20 shows a plan view of un - th 1701.
- Fig on the light-emitting device 21 and 22 show respectively a plan view obliquely from above of the Leuchtvorrich ⁇ tung 1701 wherein the light emitting device is shown cut off 1701..
- the housing 1001 is shown transparent to better see the individual potted or embedded elements.
- the housing 1001 is no longer shown as transparent, which essentially corresponds to a real view.
- the optoelectronic lighting device 1701 comprises the leadframe 400 processed according to FIGS. 13 to 15, comprising the housing 1001.
- An optoelectronic semiconductor component 1601 is arranged on an upper side 405 of a first or second lower contact section 703, 705. in this connection
- three semiconductor devices 1601 are each disposed on a second electrically conductive subcontact section 705.
- Three semiconductor devices 1601 are each disposed on a first electrically conductive subcontact portion.
- the lighting device 1701 comprises six semiconductor devices 1601. In embodiments not shown, it may be provided that more or fewer than six semiconductor devices are provided.
- the optoelectronic semiconductor components 1601 have a light-emitting surface, not shown here in detail, by means of which light can be emitted.
- This light-emitting surface is facing away from the upper side 405.
- the respective subcontact section 703, 705, on which the semiconductor components 1601 are arranged thus effects electrical contacting of the corresponding semiconductor component 1601, for example a contacting of the cathode or the anode of the respective semiconductor component 1601.
- a further first or respectively second electrically conductive lower contact section 703, 705 an electrical contacting of the cathode or anode of the respec ⁇ gen semiconductor device 1601.
- an electrical connection between the first reflective second lower contact portion 703, 705 is provided for that lower contact portion 703, 705, on which the respective semiconductor device 1601 is arranged.
- This elekt ⁇ generic contact is formed, for example by means of a bonding wire ⁇ 1603rd
- two of the electrically conductive subcontact portions 703, 705 are provided with reference numeral 2001.
- These subcontact sections 2001 are self-supporting Unterffyab ⁇ sections. This means that they are not anchored with anchoring elements 403 in the housing frame 1003.
- These cantilevered subcontact sections 2001 can, in particular, be realized according to the invention in that during the machining process a mechanical stabilization between see the first and second sub-contact portion 703, 705 was formed by means of the housing frame portion 1005.
- the housing frame portion 1005 stabilizes the two Un ⁇ terumbleabitese 2001 so that they themselves no longer need to be anchored in the housing frame 1003 by means of anchoring elements 403.
- FIGS. 23 and 24 each show an etching step of the lower surface 601 of the lower contact portions 703, 705.
- an etching protection layer 2301 is applied to the lower surface 601, leaving the area to be etched.
- An arrow with the reference numeral 2303 points to this released area, which is etched away in the course of a selective etching, in order to separate the depression 701 in order to electrically isolate the subcontact sections 703, 705 from one another.
- the etching protection layer 2301 may be formed of, for example, NiPdAu or NiPdAu.
- an etching process is comprising two steps shown sym ⁇ bolisch.
- a photoresist 2401 is applied to the etch protection layer 2301, in which case the etch protection layer 2301 is formed continuously.
- the photoresist 2401 is applied such that the area to be etched 2303 is released.
- FIG. 25 shows a flowchart of a method for processing a leadframe comprising at least one electrically conductive contact section, comprising the following steps:
- a first electrically conductive bottom contact portion and a second electrically conductive bottom contact portion are formed, which are delimited from each other by means of the recess, - Form 2503 of a the lead frame at least partially embedding housing frame having housing from a housing material, wherein forming the hous ⁇ ses an introduction of housing material in the recess tion comprises, so that between the first and the second electrically conductive bottom contact section with a ⁇ means the housing frame portion formed in the recess material is formed to mechanically stabilize the first and the second electrically conductive sub-contact portion by means of the housing frame portion.
- step 2505 it is further provided that the first and the second electrically conductive bottom contact sections are separated from one another, so that the first and the second electrically conductive bottom contact sections are separated from one another
- the invention thus includes, in particular and among other things, the idea of producing separate soldering pads, ie first and second electrically conductive subcontact portions, by means of two additional patterning steps, only after the housing has been formed, that is to say after overmolding the leadframe.
- cantilevered electrically conductive subcontact sections that is to say cantilevered soldering pads, can be produced in an advantageous manner.
- additional stabilizing structures stabilizing elements
- can be used prior to the formation of the housing ie, for example, before molding, insofar as these additional stabilizing structures can be removed again after the housing has been formed, for example by means of etching. This allows for more complex and complicated lead frame structures.
- a 6-chip design with cantilevered solder pads As a starting point, for example, a per se known QFN leadframe design (The lead frame comprising one or more electrically conductive Contact sections). "QFN" stands for Quad Fiat No Leads Package.
- QFN stands for Quad Fiat No Leads Package.
- some of the soldering pads are still grouped together, that is to say that the electrically conductive contact section is not yet subdivided into a first and a second electrically conductive subcontact section. So that means that the anode and the cathode ei ⁇ niger the solder pads are still shorted.
- Kings ⁇ nen additional stabilization connector, stabilizing elements are installed.
- first and second electrically conductive surface contact portion respectively form an anode or respectively a cathode, which are still shorted ⁇ closed before disconnecting the first and second electrical sub contact portion.
- an additional structuring step (the step of forming a depression according to the invention) is then provided.
- This additional patterning step does not necessarily have to be performed as a separate step, but according to one embodiment can be integrated into a half-etching step when the leadframe (leadframe) is manufactured.
- the later separate soldering pads first and second electrically conductive subcontact sections
- Adhesive barriers can flow worse on adjacent solder pads.
- the applied adhesive is stopped at the Klebstoffbarrie ⁇ ren.
- adhesive barriers advantageously increase a generally small path of the housing material through the solder pads. A risk of a so-called "incomplete fill”, ie an incomplete filling, is reduced.
- the forming of the housing so for example, the molding, stabilizes the composite leadframe extent that now the zuslegili ⁇ chen struts (mechanical stabilization elements) and the first and second sub-contact portions from each other can be ge ⁇ separates. That means that now this stabilization structures (stabilizing elements) removed by a ⁇ to sharmlichen patterning step and the single ⁇ NEN solder pads (first and second sub-contact portions) sepa ⁇ riert be.
- This additional structuring step may comprise, for example:
- the structures can be formed both by photolithography and with structured bond pad metallization (no plating, ie metal coating, at the locations where etching is to take place) and selective chemistry.
- the structuring By itself, for example, can be carried out by wet or dry chemical etching.
- wet-chemical may include the following etching: H 2 O + HCl + FeCl 2.
- dry chemical may include, for example, chlorination.
- a chlorination may include: 2 + CCI 4 with CF 4 added. This depends in particular on a required structural form.
- the recesses have been formed on the front side 405.
- the depressions are formed on the back 601.
- the further structuring that is to say the breaking up or separating of the first and second electrically conductive subcontact sections, is carried out by the upper side 405.
- the embodiments made in connection with forming the recess from the front or top 405 apply analogously to forming the recess from the back or bottom 601.
- solder pads can be optimally positioned. It has no consideration for a correct anchoring ge ⁇ taken are. As a result, customer-friendlier and more reliable, since adapted, solder pad sizes can be realized.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112016002148.8T DE112016002148B4 (de) | 2015-05-13 | 2016-05-11 | Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen |
CN201680027799.0A CN107567659B (zh) | 2015-05-13 | 2016-05-11 | 用于加工引线框架的方法和引线框架 |
JP2017556179A JP2018520500A (ja) | 2015-05-13 | 2016-05-11 | リード・フレームを機械加工するための方法およびリード・フレーム |
US15/573,651 US10192756B2 (en) | 2015-05-13 | 2016-05-11 | Method of machining a lead frame, and lead frame |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015107515.6A DE102015107515A1 (de) | 2015-05-13 | 2015-05-13 | Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen |
DE102015107515.6 | 2015-05-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016180883A1 true WO2016180883A1 (de) | 2016-11-17 |
Family
ID=55953173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2016/060569 WO2016180883A1 (de) | 2015-05-13 | 2016-05-11 | Verfahren zum bearbeiten eines leiterrahmens und leiterrahmen |
Country Status (6)
Country | Link |
---|---|
US (1) | US10192756B2 (de) |
JP (1) | JP2018520500A (de) |
CN (1) | CN107567659B (de) |
DE (2) | DE102015107515A1 (de) |
TW (1) | TWI609511B (de) |
WO (1) | WO2016180883A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020504437A (ja) * | 2017-03-28 | 2020-02-06 | 山東晶泰星光電科技有限公司Shandong Prosperous Star Optoelectronics Co.,Ltd. | 集積型rgb−ledディスプレイ |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10872848B2 (en) * | 2018-10-25 | 2020-12-22 | Infineon Technologies Ag | Semiconductor package with leadframe interconnection structure |
JP7337590B2 (ja) * | 2019-08-05 | 2023-09-04 | ローム株式会社 | 半導体発光装置 |
IT202100017231A1 (it) * | 2021-06-30 | 2022-12-30 | St Microelectronics Srl | Procedimento per fabbricare substrati per dispositivi a semiconduttore, substrato e dispositivo a semiconduttore corrispondenti |
DE102022120594A1 (de) | 2022-08-16 | 2024-02-22 | Ams-Osram International Gmbh | Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110186875A1 (en) * | 2010-01-29 | 2011-08-04 | Kabushiki Kaisha Toshiba | Led package |
DE102010021791A1 (de) * | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds |
US20120061808A1 (en) * | 2010-09-14 | 2012-03-15 | Guo-Cheng Liao | Semiconductor packages having increased input/output capacity and related methods |
US20130154115A1 (en) * | 2011-12-15 | 2013-06-20 | Zigmund Ramirez Camacho | Integrated circuit packaging system with leads and method of manufacture thereof |
US20130343067A1 (en) * | 2011-02-28 | 2013-12-26 | Nichia Corporation | Light emitting device |
US20140117388A1 (en) * | 2012-10-29 | 2014-05-01 | Advanced Semiconductor Engineering, Inc. | Light-emitting semiconductor packages and related methods |
DE102013215650A1 (de) | 2013-08-08 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102013224581A1 (de) * | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2178894B (en) * | 1985-08-06 | 1988-07-27 | Gen Electric Co Plc | Preparation of fragile devices |
DE102008024704A1 (de) | 2008-04-17 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
JP2012019062A (ja) * | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | 発光半導体装置、実装基板及びそれらの製造方法 |
US9240395B2 (en) * | 2010-11-30 | 2016-01-19 | Cree Huizhou Opto Limited | Waterproof surface mount device package and method |
JP2012124249A (ja) * | 2010-12-07 | 2012-06-28 | Toshiba Corp | Ledパッケージ及びその製造方法 |
JP2012216654A (ja) * | 2011-03-31 | 2012-11-08 | Sanken Electric Co Ltd | 樹脂成形フレーム及び光半導体装置 |
DE102011056700A1 (de) | 2011-12-20 | 2013-06-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil |
DE102011056708A1 (de) * | 2011-12-20 | 2013-06-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil |
JP6015004B2 (ja) * | 2012-01-05 | 2016-10-26 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
CN103367619B (zh) * | 2012-03-30 | 2015-12-02 | 光宝电子(广州)有限公司 | 金属支架结构及发光二极管结构 |
CN103367344B (zh) * | 2012-04-11 | 2016-04-27 | 光宝电子(广州)有限公司 | 连板料片、发光二极管封装品及发光二极管灯条 |
US9012268B2 (en) * | 2013-06-28 | 2015-04-21 | Stmicroelectronics, Inc. | Leadless packages and method of manufacturing same |
JP6176101B2 (ja) * | 2013-12-17 | 2017-08-09 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
-
2015
- 2015-05-13 DE DE102015107515.6A patent/DE102015107515A1/de not_active Withdrawn
-
2016
- 2016-05-11 DE DE112016002148.8T patent/DE112016002148B4/de active Active
- 2016-05-11 JP JP2017556179A patent/JP2018520500A/ja active Pending
- 2016-05-11 US US15/573,651 patent/US10192756B2/en active Active
- 2016-05-11 WO PCT/EP2016/060569 patent/WO2016180883A1/de active Application Filing
- 2016-05-11 CN CN201680027799.0A patent/CN107567659B/zh active Active
- 2016-05-13 TW TW105114817A patent/TWI609511B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110186875A1 (en) * | 2010-01-29 | 2011-08-04 | Kabushiki Kaisha Toshiba | Led package |
DE102010021791A1 (de) * | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds |
US20120061808A1 (en) * | 2010-09-14 | 2012-03-15 | Guo-Cheng Liao | Semiconductor packages having increased input/output capacity and related methods |
US20130343067A1 (en) * | 2011-02-28 | 2013-12-26 | Nichia Corporation | Light emitting device |
US20130154115A1 (en) * | 2011-12-15 | 2013-06-20 | Zigmund Ramirez Camacho | Integrated circuit packaging system with leads and method of manufacture thereof |
US20140117388A1 (en) * | 2012-10-29 | 2014-05-01 | Advanced Semiconductor Engineering, Inc. | Light-emitting semiconductor packages and related methods |
DE102013215650A1 (de) | 2013-08-08 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102013224581A1 (de) * | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020504437A (ja) * | 2017-03-28 | 2020-02-06 | 山東晶泰星光電科技有限公司Shandong Prosperous Star Optoelectronics Co.,Ltd. | 集積型rgb−ledディスプレイ |
Also Published As
Publication number | Publication date |
---|---|
DE112016002148B4 (de) | 2022-05-25 |
TW201703296A (zh) | 2017-01-16 |
CN107567659A (zh) | 2018-01-09 |
US20180096861A1 (en) | 2018-04-05 |
DE112016002148A5 (de) | 2018-01-18 |
CN107567659B (zh) | 2020-07-14 |
JP2018520500A (ja) | 2018-07-26 |
DE102015107515A1 (de) | 2016-11-17 |
US10192756B2 (en) | 2019-01-29 |
TWI609511B (zh) | 2017-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2016180883A1 (de) | Verfahren zum bearbeiten eines leiterrahmens und leiterrahmen | |
EP2583318B1 (de) | Herstellung eines oberflächenmontierbaren optoelektronischen bauelements | |
EP2345074B1 (de) | Trägerkörper für ein halbleiterbauelement, halbleiterbauelement und verfahren zur herstellung eines trägerkörpers | |
WO2015189216A1 (de) | Oberflächenmontierbares halbleiterbauelement und verfahren zu dessen herstellung | |
WO2019145350A1 (de) | Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen | |
EP3360167B1 (de) | Optoelektronisches bauelement mit einem leiterrahmen mit einer versteifungsstruktur | |
WO2016207220A1 (de) | Herstellung elektronischer bauelemente | |
DE102015109876A1 (de) | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement | |
DE102013215650A1 (de) | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung | |
DE102014100772B4 (de) | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement | |
DE102014102184A1 (de) | Herstellung eines optoelektronischen Bauelements | |
WO2022033926A1 (de) | Optoelektronisches halbleiterbauteil und herstellungsverfahren | |
DE102016118990A1 (de) | Sensor | |
WO2014183800A1 (de) | Optoelektronisches bauelement und verfahren zu seiner herstellung | |
WO2015132380A1 (de) | Optoelektronisches bauelement und verfahren zu seiner herstellung | |
DE102019122628A1 (de) | Lichtemittierendes Vorrichtungspaket und Verfahren zum Herstellen eines lichtemittierenden Vorrichtungspakets | |
WO2019141435A1 (de) | Bauteil und verfahren zur herstellung eines bauteils | |
WO2022248247A1 (de) | Optoelektronisches halbleiterbauteil und paneel | |
DE102013221429A1 (de) | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung | |
WO2016071308A1 (de) | Optoelektronisches bauelement und verfahren zu seiner herstellung | |
DE102014101557A1 (de) | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung | |
WO2021074009A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines solchen | |
DE102010033868A1 (de) | Chipträger, elektronisches Bauelement mit Chipträger und Verfahren zur Herstellung eines Chipträgers | |
WO2022028893A1 (de) | Strahlungsemittierendes bauelement, verfahren zur herstellung eines strahlungsemittierenden bauelements und modul mit einem strahlungsemittierenden bauelement | |
WO2015117947A1 (de) | Optoelektronisches bauelement und verfahren zu seiner herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16721447 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017556179 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15573651 Country of ref document: US Ref document number: 112016002148 Country of ref document: DE |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: R225 Ref document number: 112016002148 Country of ref document: DE |