DE112015004077A5 - Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement - Google Patents
Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement Download PDFInfo
- Publication number
- DE112015004077A5 DE112015004077A5 DE112015004077.3T DE112015004077T DE112015004077A5 DE 112015004077 A5 DE112015004077 A5 DE 112015004077A5 DE 112015004077 T DE112015004077 T DE 112015004077T DE 112015004077 A5 DE112015004077 A5 DE 112015004077A5
- Authority
- DE
- Germany
- Prior art keywords
- optoelectronic component
- producing
- optoelectronic
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
- H01L2224/251—Disposition
- H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014112818.4 | 2014-09-05 | ||
DE102014112818.4A DE102014112818A1 (de) | 2014-09-05 | 2014-09-05 | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
PCT/EP2015/069534 WO2016034472A1 (de) | 2014-09-05 | 2015-08-26 | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112015004077A5 true DE112015004077A5 (de) | 2017-05-18 |
Family
ID=54007714
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014112818.4A Withdrawn DE102014112818A1 (de) | 2014-09-05 | 2014-09-05 | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE112015004077.3T Pending DE112015004077A5 (de) | 2014-09-05 | 2015-08-26 | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102014112818.4A Withdrawn DE102014112818A1 (de) | 2014-09-05 | 2014-09-05 | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US9899574B2 (de) |
JP (1) | JP6322334B2 (de) |
KR (1) | KR20170048381A (de) |
CN (1) | CN106796970B (de) |
DE (2) | DE102014112818A1 (de) |
WO (1) | WO2016034472A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014116079A1 (de) * | 2014-11-04 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102016112293A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
DE102017107226A1 (de) * | 2017-04-04 | 2018-10-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3349109B2 (ja) | 1999-03-04 | 2002-11-20 | 株式会社シチズン電子 | 表面実装型発光ダイオード及びその製造方法 |
DE10041328B4 (de) * | 2000-08-23 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Verpackungseinheit für Halbleiterchips |
KR100665216B1 (ko) * | 2005-07-04 | 2007-01-09 | 삼성전기주식회사 | 개선된 측벽 반사 구조를 갖는 측면형 발광다이오드 |
JP2009070869A (ja) * | 2007-09-11 | 2009-04-02 | Panasonic Corp | 半導体発光装置 |
JP5440010B2 (ja) | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
KR20100138097A (ko) * | 2009-06-24 | 2010-12-31 | (주)엘케이전자 | 반사판을 갖는 전력용 엘이디 칩 패키지 및 그 제조방법 |
DE102009036621B4 (de) * | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
DE102010025319B4 (de) | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
US8625053B2 (en) * | 2010-06-28 | 2014-01-07 | Lg Display Co., Ltd. | Light emitting diode and backlight unit and liquid crystal display device with the same |
KR101144351B1 (ko) * | 2010-09-30 | 2012-05-11 | 서울옵토디바이스주식회사 | 웨이퍼 레벨 발광다이오드 패키지 및 그 제조방법 |
JP2012094787A (ja) | 2010-10-29 | 2012-05-17 | Panasonic Corp | 光半導体装置およびそれに用いる光半導体装置用パッケージならびにこれらの製造方法 |
KR101219106B1 (ko) | 2011-08-01 | 2013-01-11 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN104081109A (zh) * | 2012-02-02 | 2014-10-01 | 宝洁公司 | 双向光片 |
US9034672B2 (en) * | 2012-06-19 | 2015-05-19 | Epistar Corporation | Method for manufacturing light-emitting devices |
US20140001948A1 (en) * | 2012-06-29 | 2014-01-02 | Nitto Denko Corporation | Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof |
DE102013202906A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
-
2014
- 2014-09-05 DE DE102014112818.4A patent/DE102014112818A1/de not_active Withdrawn
-
2015
- 2015-08-26 CN CN201580047397.2A patent/CN106796970B/zh active Active
- 2015-08-26 US US15/508,868 patent/US9899574B2/en active Active
- 2015-08-26 WO PCT/EP2015/069534 patent/WO2016034472A1/de active Application Filing
- 2015-08-26 KR KR1020177005689A patent/KR20170048381A/ko unknown
- 2015-08-26 JP JP2017507879A patent/JP6322334B2/ja active Active
- 2015-08-26 DE DE112015004077.3T patent/DE112015004077A5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
CN106796970B (zh) | 2019-11-15 |
KR20170048381A (ko) | 2017-05-08 |
JP6322334B2 (ja) | 2018-05-09 |
US20170263825A1 (en) | 2017-09-14 |
DE102014112818A1 (de) | 2016-03-10 |
CN106796970A (zh) | 2017-05-31 |
US9899574B2 (en) | 2018-02-20 |
JP2017527993A (ja) | 2017-09-21 |
WO2016034472A1 (de) | 2016-03-10 |
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Legal Events
Date | Code | Title | Description |
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R012 | Request for examination validly filed | ||
R083 | Amendment of/additions to inventor(s) | ||
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0033480000 Ipc: H01L0033520000 |
|
R016 | Response to examination communication |