PL3245158T3 - Urządzenie i sposób produkcji węglika krzemu - Google Patents
Urządzenie i sposób produkcji węglika krzemuInfo
- Publication number
- PL3245158T3 PL3245158T3 PL15822946T PL15822946T PL3245158T3 PL 3245158 T3 PL3245158 T3 PL 3245158T3 PL 15822946 T PL15822946 T PL 15822946T PL 15822946 T PL15822946 T PL 15822946T PL 3245158 T3 PL3245158 T3 PL 3245158T3
- Authority
- PL
- Poland
- Prior art keywords
- silicon carbide
- producing silicon
- producing
- carbide
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00132—Controlling the temperature using electric heating or cooling elements
- B01J2219/00135—Electric resistance heaters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0227—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of graphite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Textile Engineering (AREA)
- Geometry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Fibers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015100062.8A DE102015100062A1 (de) | 2015-01-06 | 2015-01-06 | Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid |
PCT/EP2015/081185 WO2016110418A1 (de) | 2015-01-06 | 2015-12-23 | Vorrichtung und verfahren zum herstellen von siliziumcarbid |
EP15822946.8A EP3245158B1 (de) | 2015-01-06 | 2015-12-23 | Vorrichtung und verfahren zum herstellen von siliziumcarbid |
Publications (1)
Publication Number | Publication Date |
---|---|
PL3245158T3 true PL3245158T3 (pl) | 2020-05-18 |
Family
ID=55080100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL15822946T PL3245158T3 (pl) | 2015-01-06 | 2015-12-23 | Urządzenie i sposób produkcji węglika krzemu |
Country Status (8)
Country | Link |
---|---|
US (1) | US10260163B2 (pl) |
EP (1) | EP3245158B1 (pl) |
CN (1) | CN107109711A (pl) |
CA (1) | CA3010533A1 (pl) |
DE (1) | DE102015100062A1 (pl) |
ES (1) | ES2768765T3 (pl) |
PL (1) | PL3245158T3 (pl) |
WO (1) | WO2016110418A1 (pl) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017114243A1 (de) * | 2017-06-27 | 2018-12-27 | Psc Technologies Gmbh | Verfahren zur Herstellung von siliciumcarbidhaltigen Fasern und Schäumen sowie ihre Verwendung |
DE102018127877A1 (de) | 2018-11-08 | 2020-05-14 | Psc Technologies Gmbh | Präkursormaterial für die Herstellung siliciumcarbidhaltiger Materialien |
CN109437158B (zh) * | 2018-11-14 | 2022-03-15 | 江西晶纳新材料有限公司 | 一种筒形卧式碳纳米管沉积炉 |
CN111362701B (zh) * | 2018-12-25 | 2022-01-07 | 比亚迪股份有限公司 | 一种碳化硅晶块的制备装置、碳化硅晶块及其制备方法 |
DE102019123100A1 (de) | 2019-08-28 | 2021-03-04 | Psc Technologies Gmbh | Verfahren zur generativen Herstellung von SiC-haltigen Strukturen |
RU2748906C1 (ru) | 2020-11-17 | 2021-06-01 | Акционерное общество "Высокотехнологический научно-исследовательский институт неорганических материалов имени академика А.А. Бочвара" (АО "ВНИИНМ") | СПОСОБ ПОЛУЧЕНИЯ БЕСКЕРНОВОГО КАРБИДОКРЕМНИЕВОГО ВОЛОКНА β-МОДИФИКАЦИИ |
CN114735703A (zh) * | 2022-04-28 | 2022-07-12 | 中电化合物半导体有限公司 | 一种碳化硅纤维的合成方法及应用 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3343920A (en) * | 1966-01-11 | 1967-09-26 | Norton Co | Furnace for making silicon carbide crystals |
US4288495A (en) * | 1978-05-19 | 1981-09-08 | Ford Motor Company | Article coated with beta silicon carbide and silicon |
US4702901A (en) * | 1986-03-12 | 1987-10-27 | The United States Of America As Represented By The United States Department Of Energy | Process for growing silicon carbide whiskers by undercooling |
JP3215407B2 (ja) * | 1989-07-18 | 2001-10-09 | ヘムロツク・セミコンダクター・コーポレーシヨン | 高温反応器 |
DE69119838T2 (de) | 1990-07-30 | 1996-10-02 | Nikkiso Co Ltd | Apparat und Verfahren zur Herstellung von dünnen Kohlenstoffasern durch Dampf-Phasen-Pyrolyse |
US5514350A (en) * | 1994-04-22 | 1996-05-07 | Rutgers, The State University Of New Jersey | Apparatus for making nanostructured ceramic powders and whiskers |
JP3623292B2 (ja) | 1995-11-21 | 2005-02-23 | 株式会社アルバック | 真空蒸着用基板傾斜自公転装置 |
WO2001016414A1 (fr) | 1999-09-01 | 2001-03-08 | Nikkiso Company Limited | Matiere fibreuse de carbone, dispositif de production et procede de production de ladite matiere, et dispositif de prevention de depot de ladite matiere |
WO2002030816A1 (en) | 2000-10-06 | 2002-04-18 | Fullerene International Corporation | Double-walled carbon nanotubes and methods for production and application |
US7160531B1 (en) | 2001-05-08 | 2007-01-09 | University Of Kentucky Research Foundation | Process for the continuous production of aligned carbon nanotubes |
ITMI20031196A1 (it) * | 2003-06-13 | 2004-12-14 | Lpe Spa | Sistema per crescere cristalli di carburo di silicio |
JP2005171443A (ja) | 2003-12-12 | 2005-06-30 | Nikon Corp | 炭素繊維の化学気相成長装置及び炭素繊維の製造方法 |
RU2296827C1 (ru) | 2005-08-03 | 2007-04-10 | Общество с ограниченной ответственностью "НаноТехЦентр" | Способ получения волокнистых углеродных структур каталитическим пиролизом |
WO2007064148A1 (en) * | 2005-11-29 | 2007-06-07 | Semes Co., Ltd. | System and method for producing carbon nanotubes |
RU2389836C2 (ru) | 2007-01-09 | 2010-05-20 | Алексей Григорьевич Ткачев | Реактор для получения волокнистых углеродных структур каталитическим пиролизом |
ES2785044T3 (es) | 2007-07-09 | 2020-10-05 | Nanocomp Technologies Inc | Alineación de nanotubos quimicamente asistida dentro de estructuras extensibles |
JP2010013319A (ja) | 2008-07-03 | 2010-01-21 | Toshiba Corp | ナノカーボン製造装置 |
RU2409711C1 (ru) | 2009-05-22 | 2011-01-20 | Общество с ограниченной ответственностью "НаноТехЦентр" | Способ получения наноструктурированных углеродных волокон и устройство для его осуществления |
JP2011243619A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
JP5705068B2 (ja) | 2011-08-31 | 2015-04-22 | 日立造船株式会社 | 繊維状カーボン材料の製造装置 |
CN103556219B (zh) * | 2013-10-31 | 2016-04-20 | 国家电网公司 | 一种碳化硅外延生长装置 |
-
2015
- 2015-01-06 DE DE102015100062.8A patent/DE102015100062A1/de not_active Withdrawn
- 2015-12-23 ES ES15822946T patent/ES2768765T3/es active Active
- 2015-12-23 PL PL15822946T patent/PL3245158T3/pl unknown
- 2015-12-23 CN CN201580072083.8A patent/CN107109711A/zh active Pending
- 2015-12-23 CA CA3010533A patent/CA3010533A1/en not_active Abandoned
- 2015-12-23 EP EP15822946.8A patent/EP3245158B1/de not_active Not-in-force
- 2015-12-23 US US15/542,039 patent/US10260163B2/en not_active Expired - Fee Related
- 2015-12-23 WO PCT/EP2015/081185 patent/WO2016110418A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
ES2768765T3 (es) | 2020-06-23 |
WO2016110418A1 (de) | 2016-07-14 |
US10260163B2 (en) | 2019-04-16 |
DE102015100062A1 (de) | 2016-07-07 |
CA3010533A1 (en) | 2016-07-14 |
EP3245158B1 (de) | 2019-11-06 |
US20180002829A1 (en) | 2018-01-04 |
CN107109711A (zh) | 2017-08-29 |
EP3245158A1 (de) | 2017-11-22 |
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