DE112013006790B8 - Halbleitervorrichtungen und Verfahren zum Herstellen einer Halbleitervorrichtung - Google Patents
Halbleitervorrichtungen und Verfahren zum Herstellen einer Halbleitervorrichtung Download PDFInfo
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- DE112013006790B8 DE112013006790B8 DE112013006790.0T DE112013006790T DE112013006790B8 DE 112013006790 B8 DE112013006790 B8 DE 112013006790B8 DE 112013006790 T DE112013006790 T DE 112013006790T DE 112013006790 B8 DE112013006790 B8 DE 112013006790B8
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- H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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JP2013046905 | 2013-03-08 | ||
JP2013-046905 | 2013-03-08 | ||
PCT/JP2013/077115 WO2014136303A1 (ja) | 2013-03-08 | 2013-10-04 | 半導体装置および半導体装置の製造方法 |
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DE112013006790T5 DE112013006790T5 (de) | 2015-12-17 |
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US (1) | US10157865B2 (de) |
JP (1) | JP6038280B2 (de) |
CN (1) | CN105009266B (de) |
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WO (1) | WO2014136303A1 (de) |
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WO2018087807A1 (ja) | 2016-11-08 | 2018-05-17 | 三菱電機株式会社 | 半導体装置 |
JP6641526B2 (ja) * | 2017-03-27 | 2020-02-05 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
US11127603B2 (en) * | 2017-09-04 | 2021-09-21 | Mitsubishi Electric Corporation | Semiconductor module and power conversion device |
US11557531B2 (en) | 2018-09-26 | 2023-01-17 | Mitsubishi Electric Corporation | Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device |
DE102018125300A1 (de) * | 2018-10-12 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil und Verfahren zum Aufbringen von zumindest einem Lötpad auf ein elektronisches Bauteil |
JP7472435B2 (ja) | 2019-05-13 | 2024-04-23 | 富士電機株式会社 | 半導体モジュールの製造方法 |
JP2022144711A (ja) * | 2021-03-19 | 2022-10-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
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JP2004228461A (ja) | 2003-01-27 | 2004-08-12 | Mitsubishi Electric Corp | 半導体装置 |
JP2006210519A (ja) | 2005-01-26 | 2006-08-10 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
DE102008042777A1 (de) | 2008-10-13 | 2010-04-15 | Robert Bosch Gmbh | Selektiver Lötstop |
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JP2005183782A (ja) | 2003-12-22 | 2005-07-07 | Sony Corp | リフトオフ法に基づくパターン形成方法 |
US7569422B2 (en) * | 2006-08-11 | 2009-08-04 | Megica Corporation | Chip package and method for fabricating the same |
JP4640345B2 (ja) | 2007-01-25 | 2011-03-02 | 三菱電機株式会社 | 電力用半導体装置 |
JP5384913B2 (ja) * | 2008-11-18 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2010232230A (ja) * | 2009-03-25 | 2010-10-14 | Casio Computer Co Ltd | 半導体装置およびその製造方法 |
JP2010272711A (ja) | 2009-05-22 | 2010-12-02 | Mitsubishi Electric Corp | 半導体デバイスとその製造方法 |
JP5271861B2 (ja) * | 2009-10-07 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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- 2013-10-04 CN CN201380074382.6A patent/CN105009266B/zh active Active
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2004228461A (ja) | 2003-01-27 | 2004-08-12 | Mitsubishi Electric Corp | 半導体装置 |
JP2006210519A (ja) | 2005-01-26 | 2006-08-10 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
DE102008042777A1 (de) | 2008-10-13 | 2010-04-15 | Robert Bosch Gmbh | Selektiver Lötstop |
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US20160005703A1 (en) | 2016-01-07 |
JPWO2014136303A1 (ja) | 2017-02-09 |
CN105009266A (zh) | 2015-10-28 |
WO2014136303A1 (ja) | 2014-09-12 |
JP6038280B2 (ja) | 2016-12-07 |
DE112013006790T5 (de) | 2015-12-17 |
CN105009266B (zh) | 2018-05-08 |
DE112013006790B4 (de) | 2022-05-25 |
US10157865B2 (en) | 2018-12-18 |
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