DK3010043T3 - Halvlederindretning og fremstillingsfremgangsmåde dertil - Google Patents

Halvlederindretning og fremstillingsfremgangsmåde dertil

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Publication number
DK3010043T3
DK3010043T3 DK14807330.7T DK14807330T DK3010043T3 DK 3010043 T3 DK3010043 T3 DK 3010043T3 DK 14807330 T DK14807330 T DK 14807330T DK 3010043 T3 DK3010043 T3 DK 3010043T3
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DK
Denmark
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Application number
DK14807330.7T
Other languages
English (en)
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Application granted granted Critical
Publication of DK3010043T3 publication Critical patent/DK3010043T3/da

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    • H01L29/402—Field plates
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
DK14807330.7T 2013-06-06 2014-01-06 Halvlederindretning og fremstillingsfremgangsmåde dertil DK3010043T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310223571.7A CN103311284B (zh) 2013-06-06 2013-06-06 半导体器件及其制作方法
PCT/CN2014/070150 WO2014194669A1 (zh) 2013-06-06 2014-01-06 半导体器件及其制作方法

Publications (1)

Publication Number Publication Date
DK3010043T3 true DK3010043T3 (da) 2019-05-06

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Country Status (8)

Country Link
US (1) US9640624B2 (da)
EP (1) EP3010043B1 (da)
JP (1) JP6195979B2 (da)
KR (1) KR101780890B1 (da)
CN (1) CN103311284B (da)
DK (1) DK3010043T3 (da)
SG (1) SG11201510008UA (da)
WO (1) WO2014194669A1 (da)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311284B (zh) * 2013-06-06 2015-11-25 苏州晶湛半导体有限公司 半导体器件及其制作方法
US9824990B2 (en) 2014-06-12 2017-11-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9881857B2 (en) * 2014-06-12 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9812562B1 (en) 2016-06-03 2017-11-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure, HEMT structure and method of forming the same
JP2018157141A (ja) * 2017-03-21 2018-10-04 株式会社東芝 半導体装置及び半導体装置の製造方法
CN109935630B (zh) * 2017-12-15 2021-04-23 苏州能讯高能半导体有限公司 半导体器件及其制造方法
CN112349773A (zh) * 2019-08-07 2021-02-09 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
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