SG11201510008UA - Semiconductor device and manufacturing method therefor - Google Patents

Semiconductor device and manufacturing method therefor

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Publication number
SG11201510008UA
SG11201510008UA SG11201510008UA SG11201510008UA SG11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA SG 11201510008U A SG11201510008U A SG 11201510008UA
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
method therefor
therefor
semiconductor
Prior art date
Application number
SG11201510008UA
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Publication of SG11201510008UA publication Critical patent/SG11201510008UA/en

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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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SG11201510008UA 2013-06-06 2014-01-06 Semiconductor device and manufacturing method therefor SG11201510008UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310223571.7A CN103311284B (en) 2013-06-06 2013-06-06 Semiconductor device and preparation method thereof
PCT/CN2014/070150 WO2014194669A1 (en) 2013-06-06 2014-01-06 Semiconductor device and manufacturing method therefor

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US (1) US9640624B2 (en)
EP (1) EP3010043B1 (en)
JP (1) JP6195979B2 (en)
KR (1) KR101780890B1 (en)
CN (1) CN103311284B (en)
DK (1) DK3010043T3 (en)
SG (1) SG11201510008UA (en)
WO (1) WO2014194669A1 (en)

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US9824990B2 (en) 2014-06-12 2017-11-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9881857B2 (en) 2014-06-12 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for reliability enhancement in packages
US9812562B1 (en) * 2016-06-03 2017-11-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure, HEMT structure and method of forming the same
JP2018157141A (en) * 2017-03-21 2018-10-04 株式会社東芝 Semiconductor device and method of manufacturing the same
CN109935630B (en) * 2017-12-15 2021-04-23 苏州能讯高能半导体有限公司 Semiconductor device and method for manufacturing the same
CN112349773A (en) * 2019-08-07 2021-02-09 苏州能讯高能半导体有限公司 Semiconductor device and preparation method thereof
CN111952360B (en) * 2020-08-19 2023-02-21 深圳方正微电子有限公司 Field effect transistor and preparation method thereof

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JP2016524817A (en) 2016-08-18
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