CN101162695A - Process for gallium nitride HEMT device surface passivation and improving device electric breakdown strength - Google Patents
Process for gallium nitride HEMT device surface passivation and improving device electric breakdown strength Download PDFInfo
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- CN101162695A CN101162695A CNA2006101407576A CN200610140757A CN101162695A CN 101162695 A CN101162695 A CN 101162695A CN A2006101407576 A CNA2006101407576 A CN A2006101407576A CN 200610140757 A CN200610140757 A CN 200610140757A CN 101162695 A CN101162695 A CN 101162695A
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- gallium nitride
- breakdown strength
- electric breakdown
- grid
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002161 passivation Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title abstract description 8
- 230000015556 catabolic process Effects 0.000 title abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Abstract
The manufacturing process of passivating the surface of gallium nitride HEMT device and increasing the electric breakdown strength of device is as follows: the gallium nitride HEMT device takes polycrystal carborundum or sappire (0001) or silicon (111) as the underlay, an aluminum nitride nucleating layer grows on the underlay by adopting MOCVD, a high resistance gallium nitride cushion breaker grows on the nucleating layer, a gallium and aluminum nitride layer with concentration gradient grows on the cushion breaker, one or multiple layer of nitride with surface passivation, photoetching and etching by dry method as well as metal vapor deposition are adopted to form ohmic electrodes, photoetching and etching by dry method are adopted to cut a groove between ohmic electrodes, and a grid is deposited in the groove. The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
Description
Technical field:
This invention relates to the broad stopband gallium nitride HEMT device surface passivation and handles the technology making that improves device electric breakdown strength with the utmost point.
Background technology:
1. wide bandgap semiconductor resembles gallium nitride (GaN) and carborundum (SiC) has than first generation semiconductor Si or the much higher saturated electrons mobility of second generation semiconductor GaAs (GaAs), this means that wide bandgap semiconductor can provide much higher power density and operating efficiency under high-frequency.The superelevation puncture voltage of GaN and SiC also makes the electronic device based on them can be operated in very high voltage and current, thereby greatly raises the efficiency.At last, in the much higher environment of the extremely outstanding thermal conductivity of the semiconductor material with wide forbidden band temperature that makes device to be operated in to bear than general semiconductor device.
2. exhausted most gallium nitride device adopts certain distortion of HFET (HFET).Its basic structure is that growth skim aluminum gallium nitride (AlGaN) forms heterojunction on the GaN channel layer.This layer AlGaN keeps apart conducting channel and control grid to reduce grid leakage current, finally improves the output radio-frequency power thereby increase gate breakdown voltage.The frequency of device depends on that grid are long.The grid length of typical case's gallium nitride device is about 0.5-1.5um (micron).
3. the most frequently used distortion is an AlGaN/GaN high electron mobility field effect transistor (HEMT).The channel current density of gallium nitride HEMT can reach GaAs or more than 2.5 times of indium phosphide (InP) device.Device architecture: the AlGaN that one deck silicon mixes up forms the heterojunction raceway groove with it on GaN, again with the extremely thin GaN protection surface of one deck.
4. the high electron mobility of gallium nitride HEMT makes it to become the desirable device that is applicable to the high-frequency high power applications.The electric current of flowing through wherein is also very high, gives the credit to the ability that the AlGaN/GaN heterojunction is kept the raceway groove high charge density.This is main because GaN is a kind of strong polar material, and the self poling electric field that it has has been assembled a layer charge automatically at the end face of crystal.The polarity of AlGaN is stronger, then form the polarization sudden change at interface with GaN, thus produce and the proportional interface charge of polarization difference.
5. further, the lattice of AlGaN and GaN does not match and produce piezoelectric effect in the AlGaN layer, the extra electron of One's name is legion is provided for the HEMT raceway groove.The result causes the total charge density in the raceway groove to surpass 10
13Every square centimeter, be 4 to 5 times of GaAs HEMT.At this moment, the interface of AlGaN/GaN must precisely controlledly could guarantee the optimized electronic mobility under the piezoelectric effect.So high current density adds the high-breakdown-voltage of GaN, and gallium nitride HEMT becomes the electronic device of suitable high power applications.
6. to reliably realize the good characteristic of GaN HEMT, designs, the growth of material, technology making etc. plays crucial effects.
Summary of the invention
1. material is prepared (Fig. 1): carborundum is adopted in the making of GaN HEMT, high resistant (111) silicon, or (0001) prison jewel is made substrate (1), (AlN) nucleating layer (2) of employing MOCVD epitaxial growth one deck nitrogen aluminium on substrate; The GaN layer (3) that growth one deck is not intended to mix up on nucleating layer; The AlGaN layer (4) that growth one deck has concentration gradient on gallium nitride layer.The layer of surface passivation layer (5) at least of on the AlGaN layer, growing.Surface passivation layer adopts AlN, GaN and/or SiN.The thickness of passivation layer is at 100-3000 .
2. make Ohmic electrode (Fig. 2): at first adopt photoetching and dry etch process on passivation layer, to open the Ohmic electrode window; then the Ohmic electrode window is arrived in Ohmic electrode metal material (Ti/Al/Ni/Au) vacuum evaporation; on the ohmic metal material, cover layer protective layer again; after quick thermal annealing process, form Ohm contact electrode (10).
3. making platform isolates: utilization photoetching and dry etching are made the device platform and are isolated.
4. make the grid groove: (Fig. 3): adopt photoetching and dry etching, between Ohmic electrode, make the grid groove.The gradient and the degree of depth of groove are controlled meticulously by etching technics.The dry etching of grid groove adopts low damage ICP/RIE technology.In after groove is made device being carried out/process annealing handles, and repairs etch damage.
5. make grid (Fig. 4): the utilization photoetching, metal vacuum evaporation and metal are lifted separating process grid material (Ni/Au, Pt/Au, Ni/Pt/Au, Ni/Pd/Au, Pt/Ni/Au etc.) are deposited in grid (20) groove.
6. make dielectric layer (Fig. 5): after grid is made, the one dielectric layer (30) of on device, growing.Open on source drain with photoetching and dry etching then and connect the metal window.
7. electroplate gas bridge (Fig. 6): after grid completed, the source electrode of device connect (40) by electroplating the gas bridging.Drain electrode, source electrode and gate pads also improve thickness by electroplating, and strengthen conductive capability.
Description of drawings
Fig. 1: the material framework of making gallium nitride HEMT device
Fig. 2: make Ohmic electrode
Fig. 3: dry etching grid groove
Fig. 4: make grid
Fig. 5: growth dielectric layer, photoetching/dry etching dielectric layer
Fig. 6: conductive metal deposition, electroplate the gas bridge
Claims (6)
1. adopting carborundum/High Resistivity Si/sapphire is substrate, and growth contains the nucleating layer of AlN on substrate, the gallium nitride layer that growth is not intended to mix up on nucleating layer, the AlGaN layer of growth gradient concentration on gallium nitride layer.
2. growing surface passivation layer on gradient AlGaN layer, passivation layer be by GaN, AlN, and/or SiN constitutes.
3. adopt Ti/Al/Ni/Au to make Ohmic electrode.
4. after Ohmic electrode is made, make the grid groove.
5. gate deposition is in the grid groove.
6. grid material adopts Ni/Au, Pd/Au, Pt/Au, Ni/Pt/Au, Ni/Pd/Au, Pt/Ni/Au.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2006101407576A CN101162695A (en) | 2006-10-09 | 2006-10-09 | Process for gallium nitride HEMT device surface passivation and improving device electric breakdown strength |
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| CNA2006101407576A CN101162695A (en) | 2006-10-09 | 2006-10-09 | Process for gallium nitride HEMT device surface passivation and improving device electric breakdown strength |
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| CN101162695A true CN101162695A (en) | 2008-04-16 |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2009149626A1 (en) * | 2008-06-13 | 2009-12-17 | 西安能讯微电子有限公司 | A hemt device and a manufacturing of the hemt device |
| CN102082176A (en) * | 2010-12-03 | 2011-06-01 | 中山大学 | Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof |
| CN102339748A (en) * | 2011-11-01 | 2012-02-01 | 中国科学院微电子研究所 | Method for Reducing Gate Groove Etching Damage of HEMT Devices |
| CN102437182A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | SiO2T-shaped grid AlGaN/GaN HEMT with/SiN double-layer passivation layer and manufacturing method |
| CN103137682A (en) * | 2011-11-29 | 2013-06-05 | 台湾积体电路制造股份有限公司 | High electron mobility transistor structure with improved breakdown voltage performance |
| CN103337461A (en) * | 2013-06-13 | 2013-10-02 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing nitride gradient energy gap resonance tunneling ohmic contact |
| CN103578986A (en) * | 2013-11-14 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing high-resistance GaN thin film |
| CN103715253A (en) * | 2012-09-28 | 2014-04-09 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
| WO2014194669A1 (en) * | 2013-06-06 | 2014-12-11 | 苏州晶湛半导体有限公司 | Semiconductor device and manufacturing method therefor |
| CN105762183A (en) * | 2016-05-17 | 2016-07-13 | 中国电子科技集团公司第十三研究所 | AlGaN/GaN polarization doped field effect transistor with field plate and manufacturing method thereof |
| CN106206711A (en) * | 2016-08-22 | 2016-12-07 | 东南大学 | A kind of p type buried layer AlGaN GaN HEMT |
| CN107230629A (en) * | 2016-03-25 | 2017-10-03 | 北京大学 | The preparation method and gallium nitride field effect transistor of gallium nitride field effect transistor |
| WO2018149029A1 (en) * | 2017-02-17 | 2018-08-23 | 昆山华太电子技术有限公司 | Method for manufacturing hemt with high reliability |
| CN112635551A (en) * | 2020-12-18 | 2021-04-09 | 西安电子科技大学 | GaN heterojunction material and manufacturing method thereof |
| CN112802815A (en) * | 2020-12-29 | 2021-05-14 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
| CN114582725A (en) * | 2020-11-30 | 2022-06-03 | 华润微电子（重庆）有限公司 | GaN device structure and preparation method thereof |
| WO2022143778A1 (en) * | 2020-12-29 | 2022-07-07 | 苏州能讯高能半导体有限公司 | Epitaxial structure of semiconductor device, preparation method, and semiconductor device |
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2006
- 2006-10-09 CN CNA2006101407576A patent/CN101162695A/en active Pending
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| WO2009149626A1 (en) * | 2008-06-13 | 2009-12-17 | 西安能讯微电子有限公司 | A hemt device and a manufacturing of the hemt device |
| CN101604704B (en) * | 2008-06-13 | 2012-09-05 | 西安能讯微电子有限公司 | HEMT device and manufacturing method thereof |
| US8304811B2 (en) | 2008-06-13 | 2012-11-06 | Dynax Semiconductor, Inc. | HEMT device and a manufacturing of the HEMT device |
| CN102082176A (en) * | 2010-12-03 | 2011-06-01 | 中山大学 | Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof |
| CN102339748B (en) * | 2011-11-01 | 2013-08-14 | 中国科学院微电子研究所 | Method for reducing etching damage of grid groove of HEMT device |
| CN102339748A (en) * | 2011-11-01 | 2012-02-01 | 中国科学院微电子研究所 | Method for Reducing Gate Groove Etching Damage of HEMT Devices |
| CN103137682B (en) * | 2011-11-29 | 2015-10-07 | 台湾积体电路制造股份有限公司 | There is the high electron mobility transistor structure improving breakdown voltage property |
| CN103137682A (en) * | 2011-11-29 | 2013-06-05 | 台湾积体电路制造股份有限公司 | High electron mobility transistor structure with improved breakdown voltage performance |
| CN102437182A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | SiO2T-shaped grid AlGaN/GaN HEMT with/SiN double-layer passivation layer and manufacturing method |
| CN103715253B (en) * | 2012-09-28 | 2017-01-11 | 创世舫电子日本株式会社 | Compound semiconductor device and method of manufacturing the same |
| CN103715253A (en) * | 2012-09-28 | 2014-04-09 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
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| US9640624B2 (en) | 2013-06-06 | 2017-05-02 | Enkris Semiconductor, Inc. | Semiconductor device and manufacturing method therefor |
| CN103337461A (en) * | 2013-06-13 | 2013-10-02 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing nitride gradient energy gap resonance tunneling ohmic contact |
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| CN107230629A (en) * | 2016-03-25 | 2017-10-03 | 北京大学 | The preparation method and gallium nitride field effect transistor of gallium nitride field effect transistor |
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| CN105762183B (en) * | 2016-05-17 | 2019-01-04 | 中国电子科技集团公司第十三研究所 | AlGaN/GaN polarization doped field effect transistor and manufacturing method with field plate |
| CN106206711B (en) * | 2016-08-22 | 2019-04-30 | 东南大学 | A P-type buried layer AlGaN-GaN high electron mobility transistor |
| CN106206711A (en) * | 2016-08-22 | 2016-12-07 | 东南大学 | A kind of p type buried layer AlGaN GaN HEMT |
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| CN112635551A (en) * | 2020-12-18 | 2021-04-09 | 西安电子科技大学 | GaN heterojunction material and manufacturing method thereof |
| CN112802815A (en) * | 2020-12-29 | 2021-05-14 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
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Open date: 20080416 |