JP6195979B2 - 半導体デバイスおよびその製作方法 - Google Patents
半導体デバイスおよびその製作方法 Download PDFInfo
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- JP6195979B2 JP6195979B2 JP2016517130A JP2016517130A JP6195979B2 JP 6195979 B2 JP6195979 B2 JP 6195979B2 JP 2016517130 A JP2016517130 A JP 2016517130A JP 2016517130 A JP2016517130 A JP 2016517130A JP 6195979 B2 JP6195979 B2 JP 6195979B2
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 156
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 52
- 230000007423 decrease Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 35
- 229910002601 GaN Inorganic materials 0.000 claims description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 25
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910003855 HfAlO Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910017109 AlON Inorganic materials 0.000 claims description 5
- 229910004541 SiN Inorganic materials 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 37
- 238000010586 diagram Methods 0.000 description 35
- 238000009826 distribution Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
半導体デバイス能動領域と、電極形状制御層と、電極と、を含み、
前記電極形状制御層は、前記半導体デバイス能動領域上に位置し、アルミニウム元素を含有し、全部または一部の前記電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、前記電極形状制御層には電極領域が設けられ、前記電極領域には、半導体デバイス能動領域に延びて縦方向に前記電極形状制御層を貫通する溝が設けられ、前記溝の側面の全部または一部が、斜面、または両側に凹む円弧状のスロープ、または中央に突出する円弧状のスロープであり、
半導体デバイス能動領域を提供するステップS1と、
前記半導体デバイス能動領域上に電極形状制御層を形成し、前記電極形状制御層は、アルミニウム元素を含有し、全部または一部の前記電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、前記電極形状制御層には電極領域が設けられるステップS2と、
前記電極領域に、半導体デバイス能動領域に延びて縦方向に前記電極形状制御層を貫通する溝を形成し、前記溝の側面の全部または一部が、斜面、または両側に凹む円弧状のスロープ、または中央に突出する円弧状のスロープであるステップS3と、
前記電極領域における溝内に電極を形成し、前記電極は、全部または一部が電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、底部が半導体デバイス能動領域に接触するステップS4と、を含む。
前記電極形状制御層に第1マスク層を塗布し、フォトエッチングを行って、電極領域を露出させるステップS31と、
前記電極領域をエッチングして、半導体デバイス能動領域に延びる溝を形成するステップS32と、
第1マスク層を除去するS33と、
前記電極形状制御層に第2マスク層を塗布し、フォトエッチングを行って、電極領域を露出させるステップS41と、
電極を堆積し、第2マスク層を除去して、電極を形成するステップS42と、を含む。
前記電極形状制御層における溝の内壁および電極形状制御層の表面の全部または一部に第2誘電体層を堆積し、第2誘電体層は、Al2O3、AlON、SiN、SiON、SiO2、HfAlOx、HfO2のうちの1つまたは複数の組み合わせを含む、ことをさらに含む。
以下、図面に示す具体的な実施形態を参照しながら、本発明を詳しく説明する。しかし、これらの実施形態は、本発明を制限するものではなく、当業者がこれらの実施形態に基づいて行った、構成、方法、または機能上の変換は、全て、本発明の保護範囲に含まれる。
半導体デバイス能動領域と、電極形状制御層と、電極と、を含み、
電極形状制御層は、半導体デバイス能動領域上に位置し、アルミニウム元素を含有し、全部または一部の電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、電極形状制御層には電極領域が設けられ、電極領域には、半導体デバイス能動領域に延びて縦方向に電極形状制御層を貫通する溝が設けられ、溝の側面の全部または一部が、斜面、または両側に凹む円弧状のスロープ、または中央に突出する円弧状のスロープであり、
電極は、全部または一部が電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、底部が半導体デバイス能動領域に接触する。
半導体デバイス能動領域を提供するステップS1と、
半導体デバイス能動領域上に電極形状制御層を形成し、電極形状制御層は、アルミニウム元素を含有し、全部または一部の電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、電極形状制御層には電極領域が設けられるステップS2と、
電極領域に、半導体デバイス能動領域に延びて縦方向に前記電極形状制御層を貫通する溝を形成し、溝の側面の全部または一部が、斜面、または両側に凹む円弧状のスロープ、または中央に突出する円弧状のスロープであるステップS3と、
電極領域における溝内に電極を形成し、電極は、全部または一部が電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、底部が半導体デバイス能動領域に接触するステップS4と、を含む。
本実施例における半導体デバイスの構成は、図2に示す通りである。この半導体デバイスは、
半導体デバイス能動領域1と、半導体デバイス能動領域1上における電極形状制御層2と、電極5と、を含み、
電極形状制御層は、アルミニウム元素を含有し、アルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、減少が線形傾向にあり、電極形状制御層2には電極領域が定義され、電極領域には、半導体デバイス能動領域に延びて縦方向に電極形状制御層を貫通する溝が設けられ、溝は、逆台形であり、側面が斜面であり、
電極5は、電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、半導体デバイス能動領域1に接触する。本実施例において、電極5は、一部が溝内にあり、一部が溝の上方に位置する。
図3Aに示すように、半導体デバイス能動領域1を提供し、
図3Bに示すように、半導体デバイス能動領域1上に電極形状制御層2を形成し、電極形状制御層2におけるアルミニウム元素の含有量が下から上へ漸次減少し、減少が線形傾向にあり、電極形状制御層には電極領域が定義され、
図3Cに示すように、電極形状制御層2に第1マスク層3を塗布し、フォトエッチングによって、電極領域を露出させ、
電極領域をエッチングして、半導体デバイス能動領域に延びる溝を形成し、溝が少なくとも部分的に電極形状制御層を貫通し、溝の形状が電極形状制御層2におけるアルミニウム元素の含有量の変化に応じて変化し、溝の最小加工寸法がエッチングプロセスによって調節でき、フォトエッチングの最小加工寸法に比べると、溝の最小加工寸法を、それぞれ、図3D1および図3D2に示すように、フォトエッチングの最小加工寸法より、少し大きく、または少し小さくすることができ、
図3Eに示すように、第1マスク層3を除去し、
図3Fに示すように、第2マスク層4を塗布し、フォトエッチングによって、電極領域を露出させ、
図3Gに示すように、電極を堆積し、第2マスク層4を除去して、電極5を形成する、ことを含む。
図4Hは、実施例2で説明される半導体デバイスの構成の模式図であり、その構成は、実施例1で説明された半導体デバイスとほぼ同じであり、相違点は、溝部分が半導体デバイス能動領域内まで延びていることにある。
図4Aに示すように、半導体デバイス能動領域1を提供し、
図4Bに示すように、半導体デバイス能動領域1上に電極形状制御層2を形成し、電極形状制御層2におけるアルミニウム元素の含有量が下から上へ漸次減少し、減少が線形傾向にあり、電極形状制御層には電極領域が定義され、
図4Cに示すように、電極形状制御層2に第1マスク層3を塗布し、フォトエッチングによって、電極領域を露出させ、
電極形状制御層2における電極領域をエッチングして、電極形状制御層2を貫通した溝を形成し、溝の形状が電極形状制御層2におけるアルミニウム元素の含有量の変化に応じて変化し、溝の最小加工寸法がエッチングプロセスによって調節でき、フォトエッチングの最小加工寸法に比べると、溝の最小加工寸法を、フォトエッチングの最小加工寸法より、少し大きく、または少し小さくすることができ、図4Dに示すように、少し大きくする場合であり、
図4Eに示すように、溝における半導体デバイス能動領域をエッチングして、半導体デバイス能動領域1内まで延びている溝を形成し、
図4Fに示すように、第1マスク層3を除去し、
図4Gに示すように、第2マスク層4を塗布し、フォトエッチングによって、電極領域を露出させ、
図4Hに示すように、電極を堆積し、第2マスク層4を除去して、電極5を形成する。
それ以外の構成および製作方法は、全て実施例1と同様であり、ここで説明を省略する。
図5に示されたのは、実施例3で説明される半導体デバイスの模式図である。
本実施形態では、電極形状制御層2におけるアルミニウム元素の含有量が下から上へ漸次減少し、減少が加速傾向にある。それ以外は、実施例1と同様であり、ここで説明を省略する。
図6に示されたのは、実施例4で説明される半導体デバイスの模式図である。
本実施形態では、電極形状制御層2におけるアルミニウム元素の含有量が下から上へ漸次減少し、減少が減速傾向にある。それ以外は、実施例1と同様であり、ここで説明を省略する。
図7に示されたのは、実施例5で説明される半導体デバイスの模式図である。
図8に示されたのは、実施例6で説明される半導体デバイスの模式図である。
図9に示されたのは、実施例7で説明される半導体デバイスの模式図である。
図10に示されたのは、実施例8で説明される半導体デバイスの模式図である。
図11に示されたのは、実施例9で説明される半導体デバイスの模式図である。
図12に示されたのは、実施例10における半導体デバイスの模式図である。
2 電極形状制御層
3 第1マスク層
4 第2マスク層
5,51,52,53 電極
11 基板
Claims (15)
- 半導体デバイスであって、
半導体デバイス能動領域と、電極形状制御層と、電極と、を含み、
前記電極形状制御層は、前記半導体デバイス能動領域上に位置し、アルミニウム元素を含有し、全部または一部の前記電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次に減少し、前記電極形状制御層には電極領域が設けられ、前記電極領域には、半導体デバイス能動領域に延びて縦方向に前記電極形状制御層を貫通する溝が設けられ、溝の形状が電極形状制御層におけるアルミニウム元素の含有量の変化に応じて変化し、アルミニウム元素の含有量の減少が線形傾向にあるとき、溝は逆台形であり、側面が斜面であり、アルミニウム元素の含有量の減少が減速傾向にあるとき、溝の側面が両側に凹む円弧状のスロープであり、アルミニウム元素の含有量の減少が加速傾向にあるとき、溝の側面が中央に突出する円弧状のスロープであり、
前記電極は、全部または一部が前記電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、底部が半導体デバイス能動領域に接触する、
ことを特徴とする半導体デバイス。 - 前記電極形状制御層は、半導体層、第1誘電体層のうちの1つまたは2つの組み合わせである、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記半導体デバイス能動領域および電極形状制御層における半導体層は、3族窒化物、シリコン、ゲルマニウム、ゲルマニウム・シリコン、III−∨族化合物、酸化物のうちの1つまたは複数の組み合わせである、ことを特徴とする請求項2に記載の半導体デバイス。
- 前記第1誘電体層は、SiN、SiAlN、SiAlGaN、SiAlOx、AlMgON、HfAlOxのうちの1つまたは複数の組み合わせを含む、ことを特徴とする請求項2に記載の半導体デバイス。
- 前記電極形状制御層が半導体層および第1誘電体層である場合、第1誘電体層が半導体層の上方に位置し、前記半導体層におけるいずれかの箇所のアルミニウム元素の含有量が、第1誘電体層におけるいずれかの箇所のアルミニウム元素の含有量より高い、ことを特徴とする請求項2に記載の半導体デバイス。
- 全部または一部の前記電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ、線形的に減少し、または、加速的に減少し、または、減速的に減少し、または、まず線形的に減少してから変わらないように保持し、または、まず減速的に減少してから変わらないように保持し、または、まず加速的に減少してから変わらないように保持する、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記電極形状制御層における溝部分は、半導体デバイス能動領域内まで延びている、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記電極形状制御層における溝の内壁および電極形状制御層の表面の全部または一部には、第2誘電体層が堆積され、前記電極の全部または一部が前記第2誘電体層上に位置する、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記第2誘電体層は、Al2O3、AlON、SiN、SiON、SiO2、HfAlOx、HfO2のうちの1つまたは複数の組み合わせを含む、ことを特徴とする請求項8に記載の半導体デバイス。
- 前記半導体デバイスは、ダイオードおよびトライオードを含み、前記電極は、ダイオードのアノードおよびカソード、並びに、トライオードのソース、ドレイン、およびゲートを含む、ことを特徴とする請求項1に記載の半導体デバイス。
- 前記半導体デバイス能動領域は、窒化アルミニウムガリウム/窒化ガリウムのヘテロ接合からなる高電子移動度トランジスタ、窒化アルミニウムインジウムガリウム/窒化ガリウムのヘテロ接合からなる高電子移動度トランジスタ、窒化アルミニウム/窒化ガリウムのヘテロ接合からなる高移動度トライオード、窒化ガリウムMOSFET、インジウム窒化ガリウム/窒化ガリウムの多重量子井戸構造が含まれるデバイス、p型窒化物からなる発光ダイオード、UV−LED、光電検出器、水素発生器、太陽電池、LDMOS、UMOSFET、ショットキーダイオード、またはアバランシェダイオードを含む、ことを特徴とする請求項10に記載の半導体デバイス。
- 請求項1に記載の半導体デバイスの製造方法であって、
半導体デバイス能動領域を提供するステップS1と、
前記半導体デバイス能動領域上に電極形状制御層を形成し、前記電極形状制御層は、アルミニウム元素を含有し、全部または一部の前記電極形状制御層におけるアルミニウム元素の含有量が、半導体デバイス能動領域から、下から上へ漸次減少し、前記電極形状制御層には電極領域が設けられるステップS2と、
前記電極領域に、半導体デバイス能動領域に延びて縦方向に前記電極形状制御層を貫通する溝を形成し、前記溝の側面の全部または一部が、斜面、または両側に凹む円弧状のスロープ、または中央に突出する円弧状のスロープであるステップS3と、
前記電極領域における溝内に電極を形成し、前記電極は、全部または一部が電極領域における溝内に位置し、形状が溝の形状に対応するように設定され、底部が半導体デバイス能動領域に接触するステップS4と、を含む、
ことを特徴とする半導体デバイスの製造方法。 - 前記ステップS3およびステップS4は、具体的に、
前記電極形状制御層に第1マスク層を塗布し、フォトエッチングを行って、電極領域を露出させるステップS31と、
前記電極領域をエッチングして、半導体デバイス能動領域に延びる溝を形成するステップS32と、
第1マスク層を除去するS33と、
前記電極形状制御層に第2マスク層を塗布し、フォトエッチングを行って、電極領域を露出させるステップS41と、
電極を堆積し、第2マスク層を除去して、電極を形成するステップS42と、を含む、
ことを特徴とする請求項12に記載の半導体デバイスの製造方法。 - 前記ステップS2における電極形状制御層は、半導体層、第1誘電体層のうちの1つまたは2つの組み合わせであり、第1誘電体層の成長方式は、MOCVD、PECVD、LPCVD、MBE、CVD、またはGCIBを含む、ことを特徴とする請求項12に記載の半導体デバイスの製造方法。
- 前記ステップS4の前に、
前記電極形状制御層における溝の内壁および電極形状制御層の表面の全部または一部に第2誘電体層を堆積し、第2誘電体層は、Al2O3、AlON、SiN、SiON、SiO2、HfAlOx、HfO2のうちの1つまたは複数の組み合わせを含む、ことをさらに含む、
ことを特徴とする請求項12に記載の半導体デバイスの製造方法。
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CN103311284B (zh) * | 2013-06-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体器件及其制作方法 |
US9881857B2 (en) | 2014-06-12 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for reliability enhancement in packages |
US9824990B2 (en) | 2014-06-12 | 2017-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for reliability enhancement in packages |
US9812562B1 (en) * | 2016-06-03 | 2017-11-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, HEMT structure and method of forming the same |
JP2018157141A (ja) * | 2017-03-21 | 2018-10-04 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
CN109935630B (zh) * | 2017-12-15 | 2021-04-23 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
CN112349773A (zh) * | 2019-08-07 | 2021-02-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
CN111952360B (zh) * | 2020-08-19 | 2023-02-21 | 深圳方正微电子有限公司 | 场效应管及其制备方法 |
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US6235639B1 (en) | 1998-11-25 | 2001-05-22 | Micron Technology, Inc. | Method of making straight wall containers and the resultant containers |
KR100403454B1 (ko) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
KR20020002700A (ko) * | 2000-06-30 | 2002-01-10 | 박종섭 | 금속 배선 형성 방법 |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US7456443B2 (en) | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7749911B2 (en) * | 2004-11-30 | 2010-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an improved T-shaped gate structure |
US7141486B1 (en) | 2005-06-15 | 2006-11-28 | Agere Systems Inc. | Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures |
JP2007165446A (ja) | 2005-12-12 | 2007-06-28 | Oki Electric Ind Co Ltd | 半導体素子のオーミックコンタクト構造 |
CN101162695A (zh) | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | 氮化镓hemt器件表面钝化及提高器件击穿电压的工艺 |
CN101312207B (zh) | 2007-05-21 | 2011-01-05 | 西安捷威半导体有限公司 | 增强型hemt器件及其制造方法 |
CN103441144B (zh) * | 2007-06-06 | 2016-09-14 | 苏州捷芯威半导体有限公司 | Hemt器件及其制造方法 |
JP2008306083A (ja) * | 2007-06-11 | 2008-12-18 | Nec Corp | Iii−v族窒化物半導体電界効果型トランジスタおよびその製造方法 |
US7859021B2 (en) * | 2007-08-29 | 2010-12-28 | Sanken Electric Co., Ltd. | Field-effect semiconductor device |
CN101604704B (zh) * | 2008-06-13 | 2012-09-05 | 西安能讯微电子有限公司 | Hemt器件及其制造方法 |
JP2010067690A (ja) | 2008-09-09 | 2010-03-25 | Toshiba Corp | 化合物半導体装置およびその製造方法 |
JP5496635B2 (ja) * | 2008-12-19 | 2014-05-21 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
CN102130158B (zh) * | 2011-01-05 | 2012-07-25 | 西安电子科技大学 | 阶梯型凹槽栅高电子迁移率晶体管 |
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CN103311284B (zh) * | 2013-06-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体器件及其制作方法 |
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CN103311284B (zh) | 2015-11-25 |
EP3010043B1 (en) | 2019-03-06 |
DK3010043T3 (da) | 2019-05-06 |
JP2016524817A (ja) | 2016-08-18 |
KR101780890B1 (ko) | 2017-09-21 |
KR20160013218A (ko) | 2016-02-03 |
EP3010043A4 (en) | 2017-03-08 |
EP3010043A1 (en) | 2016-04-20 |
WO2014194669A1 (zh) | 2014-12-11 |
CN103311284A (zh) | 2013-09-18 |
SG11201510008UA (en) | 2016-01-28 |
US9640624B2 (en) | 2017-05-02 |
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