DE102011076243B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102011076243B4
DE102011076243B4 DE102011076243.4A DE102011076243A DE102011076243B4 DE 102011076243 B4 DE102011076243 B4 DE 102011076243B4 DE 102011076243 A DE102011076243 A DE 102011076243A DE 102011076243 B4 DE102011076243 B4 DE 102011076243B4
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DE
Germany
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region
semiconductor device
conductivity type
area
edge termination
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DE102011076243.4A
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German (de)
English (en)
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DE102011076243A1 (de
Inventor
Katsumi Nakamura
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE102011076243A1 publication Critical patent/DE102011076243A1/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102011076243.4A 2010-05-26 2011-05-20 Halbleitervorrichtung Active DE102011076243B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010120180 2010-05-26
JP2010-120180 2010-05-26
JP2011021828A JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置
JP2011-021828 2011-02-03

Publications (2)

Publication Number Publication Date
DE102011076243A1 DE102011076243A1 (de) 2011-12-01
DE102011076243B4 true DE102011076243B4 (de) 2015-08-27

Family

ID=44924873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011076243.4A Active DE102011076243B4 (de) 2010-05-26 2011-05-20 Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US8686469B2 (https=)
JP (1) JP5925991B2 (https=)
KR (2) KR101298677B1 (https=)
CN (2) CN103633148B (https=)
DE (1) DE102011076243B4 (https=)
TW (1) TWI437690B (https=)

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US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101604234B1 (ko) * 2012-03-05 2016-03-17 미쓰비시덴키 가부시키가이샤 반도체장치
KR101654223B1 (ko) 2012-04-13 2016-09-05 미쓰비시덴키 가부시키가이샤 다이오드
DE112012006967B4 (de) 2012-10-02 2022-09-01 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN104969360B (zh) * 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
JP6108451B2 (ja) * 2013-04-05 2017-04-05 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
CN103208531B (zh) * 2013-04-07 2015-07-15 株洲南车时代电气股份有限公司 一种快恢复二极管frd芯片及其制作方法
CN107768427A (zh) * 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
WO2015004716A1 (ja) * 2013-07-08 2015-01-15 三菱電機株式会社 半導体装置
TWI614898B (zh) * 2013-12-06 2018-02-11 Diodes Taiwan S.A.R.L. 終止區結構及其製造方法
JP6165271B2 (ja) 2014-01-29 2017-07-19 三菱電機株式会社 電力用半導体装置
KR101917486B1 (ko) * 2014-01-29 2018-11-09 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치
JP6190740B2 (ja) * 2014-03-11 2017-08-30 新電元工業株式会社 半導体装置及び半導体装置の製造方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014212455B4 (de) * 2014-06-27 2024-07-04 Robert Bosch Gmbh Diode mit einem plattenförmigen Halbleiterelement
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
JP2016100455A (ja) * 2014-11-21 2016-05-30 三菱電機株式会社 半導体装置及びその製造方法
US10290711B2 (en) 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN107251234B (zh) * 2015-02-09 2020-10-09 三菱电机株式会社 半导体装置
US9576791B2 (en) * 2015-06-01 2017-02-21 GM Global Technology Operations LLC Semiconductor devices including semiconductor structures and methods of fabricating the same
JP6611532B2 (ja) * 2015-09-17 2019-11-27 ローム株式会社 半導体装置および半導体装置の製造方法
WO2017115434A1 (ja) 2015-12-28 2017-07-06 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6820738B2 (ja) 2016-12-27 2021-01-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6815285B2 (ja) * 2017-06-26 2021-01-20 株式会社東芝 半導体装置
US10361276B1 (en) * 2018-03-17 2019-07-23 Littelfuse, Inc. Embedded field plate field effect transistor
JP6558462B2 (ja) * 2018-03-22 2019-08-14 三菱電機株式会社 半導体装置
JP7052476B2 (ja) 2018-03-27 2022-04-12 三菱電機株式会社 半導体装置
JP7030637B2 (ja) * 2018-07-23 2022-03-07 三菱電機株式会社 半導体装置の製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
JP7233256B2 (ja) * 2019-03-12 2023-03-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
US12477773B2 (en) 2020-09-17 2025-11-18 Rohm Co., Ltd. Semiconductor device including terminal electrodes
JP7580245B2 (ja) 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
US20220140132A1 (en) * 2020-11-04 2022-05-05 Cree, Inc. Passivation structures for semiconductor devices
CN114582864B (zh) * 2020-11-30 2026-02-13 华为技术有限公司 一种功率半导体器件及电子设备
JP7487094B2 (ja) * 2020-12-23 2024-05-20 株式会社 日立パワーデバイス 半導体装置
DE102021000610A1 (de) * 2021-02-08 2022-08-11 3-5 Power Electronics GmbH Stapelförmige III-V-Halbleiterdiode
CN113451137A (zh) * 2021-06-29 2021-09-28 深圳铨力半导体有限公司 晶体管制造方法、设备、计算机可读存储介质与程序产品
JP7504066B2 (ja) * 2021-08-17 2024-06-21 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP7574161B2 (ja) 2021-09-22 2024-10-28 株式会社東芝 半導体装置
JP7558134B2 (ja) * 2021-10-13 2024-09-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12363961B2 (en) * 2021-11-15 2025-07-15 Infineon Technologies Ag Semiconductor device
JP7692341B2 (ja) * 2021-12-16 2025-06-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7692875B2 (ja) * 2022-05-16 2025-06-16 三菱電機株式会社 パワー半導体装置およびパワー半導体装置の製造方法
DE102022124385A1 (de) 2022-09-22 2024-03-28 Infineon Technologies Ag Feldeffekttransistor mit randabschlussbereich

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611689A1 (de) * 1995-07-20 1997-01-23 Mitsubishi Electric Corp Halbleiterbauelement
DE102006002439A1 (de) * 2005-01-28 2006-08-10 Mitsubishi Denki K.K. Halbleitervorrichtung
DE102006025958B3 (de) * 2006-06-02 2007-10-11 Infineon Technologies Ag Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten
JP2009283781A (ja) * 2008-05-23 2009-12-03 Mitsubishi Electric Corp 半導体装置
DE102010028978A1 (de) * 2009-06-04 2010-12-09 Mitsubishi Electric Corp. Halbleitervorrichtung

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JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JP3444081B2 (ja) * 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
JP2005057235A (ja) 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
US7259440B2 (en) * 2004-03-30 2007-08-21 Ixys Corporation Fast switching diode with low leakage current
DE102005053487B4 (de) 2005-11-09 2011-06-09 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
JP4857948B2 (ja) * 2006-06-26 2012-01-18 株式会社デンソー 半導体装置の製造方法
JP2008091705A (ja) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5206541B2 (ja) 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
JP5003598B2 (ja) * 2008-06-05 2012-08-15 富士電機株式会社 半導体装置
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
CN102422416B (zh) 2009-09-07 2014-05-14 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611689A1 (de) * 1995-07-20 1997-01-23 Mitsubishi Electric Corp Halbleiterbauelement
DE102006002439A1 (de) * 2005-01-28 2006-08-10 Mitsubishi Denki K.K. Halbleitervorrichtung
DE102006025958B3 (de) * 2006-06-02 2007-10-11 Infineon Technologies Ag Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten
JP2009283781A (ja) * 2008-05-23 2009-12-03 Mitsubishi Electric Corp 半導体装置
DE102008051166A1 (de) * 2008-05-23 2009-12-17 Mitsubishi Electric Corp. Halbleitervorrichtung mit einer Diode
DE102010028978A1 (de) * 2009-06-04 2010-12-09 Mitsubishi Electric Corp. Halbleitervorrichtung

Also Published As

Publication number Publication date
US20110291223A1 (en) 2011-12-01
TW201208039A (en) 2012-02-16
JP2012009811A (ja) 2012-01-12
CN102280493B (zh) 2014-02-05
TWI437690B (zh) 2014-05-11
KR101298677B1 (ko) 2013-08-21
KR101384246B1 (ko) 2014-04-11
JP5925991B2 (ja) 2016-05-25
KR20130083867A (ko) 2013-07-23
CN103633148A (zh) 2014-03-12
CN103633148B (zh) 2017-12-08
US8686469B2 (en) 2014-04-01
KR20110129817A (ko) 2011-12-02
DE102011076243A1 (de) 2011-12-01
CN102280493A (zh) 2011-12-14

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