JP5925991B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5925991B2
JP5925991B2 JP2011021828A JP2011021828A JP5925991B2 JP 5925991 B2 JP5925991 B2 JP 5925991B2 JP 2011021828 A JP2011021828 A JP 2011021828A JP 2011021828 A JP2011021828 A JP 2011021828A JP 5925991 B2 JP5925991 B2 JP 5925991B2
Authority
JP
Japan
Prior art keywords
region
semiconductor device
type
layer
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011021828A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012009811A5 (https=
JP2012009811A (ja
Inventor
中村　勝光
勝光 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011021828A priority Critical patent/JP5925991B2/ja
Priority to TW100112417A priority patent/TWI437690B/zh
Priority to US13/093,397 priority patent/US8686469B2/en
Priority to KR1020110047223A priority patent/KR101298677B1/ko
Priority to DE102011076243.4A priority patent/DE102011076243B4/de
Priority to CN201310646732.3A priority patent/CN103633148B/zh
Priority to CN201110150632.2A priority patent/CN102280493B/zh
Publication of JP2012009811A publication Critical patent/JP2012009811A/ja
Priority to KR1020130066032A priority patent/KR101384246B1/ko
Publication of JP2012009811A5 publication Critical patent/JP2012009811A5/ja
Application granted granted Critical
Publication of JP5925991B2 publication Critical patent/JP5925991B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2011021828A 2010-05-26 2011-02-03 半導体装置 Active JP5925991B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011021828A JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置
TW100112417A TWI437690B (zh) 2010-05-26 2011-04-11 半導體裝置
US13/093,397 US8686469B2 (en) 2010-05-26 2011-04-25 Semiconductor device
KR1020110047223A KR101298677B1 (ko) 2010-05-26 2011-05-19 반도체장치
DE102011076243.4A DE102011076243B4 (de) 2010-05-26 2011-05-20 Halbleitervorrichtung
CN201310646732.3A CN103633148B (zh) 2010-05-26 2011-05-26 半导体装置
CN201110150632.2A CN102280493B (zh) 2010-05-26 2011-05-26 半导体装置
KR1020130066032A KR101384246B1 (ko) 2010-05-26 2013-06-10 반도체장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010120180 2010-05-26
JP2010120180 2010-05-26
JP2011021828A JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014160371A Division JP6301776B2 (ja) 2010-05-26 2014-08-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2012009811A JP2012009811A (ja) 2012-01-12
JP2012009811A5 JP2012009811A5 (https=) 2013-12-19
JP5925991B2 true JP5925991B2 (ja) 2016-05-25

Family

ID=44924873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011021828A Active JP5925991B2 (ja) 2010-05-26 2011-02-03 半導体装置

Country Status (6)

Country Link
US (1) US8686469B2 (https=)
JP (1) JP5925991B2 (https=)
KR (2) KR101298677B1 (https=)
CN (2) CN103633148B (https=)
DE (1) DE102011076243B4 (https=)
TW (1) TWI437690B (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101604234B1 (ko) * 2012-03-05 2016-03-17 미쓰비시덴키 가부시키가이샤 반도체장치
KR101654223B1 (ko) 2012-04-13 2016-09-05 미쓰비시덴키 가부시키가이샤 다이오드
DE112012006967B4 (de) 2012-10-02 2022-09-01 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN104969360B (zh) * 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
JP6108451B2 (ja) * 2013-04-05 2017-04-05 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
CN103208531B (zh) * 2013-04-07 2015-07-15 株洲南车时代电气股份有限公司 一种快恢复二极管frd芯片及其制作方法
CN107768427A (zh) * 2013-06-12 2018-03-06 三菱电机株式会社 半导体装置
WO2015004716A1 (ja) * 2013-07-08 2015-01-15 三菱電機株式会社 半導体装置
TWI614898B (zh) * 2013-12-06 2018-02-11 Diodes Taiwan S.A.R.L. 終止區結構及其製造方法
JP6165271B2 (ja) 2014-01-29 2017-07-19 三菱電機株式会社 電力用半導体装置
KR101917486B1 (ko) * 2014-01-29 2018-11-09 미쓰비시덴키 가부시키가이샤 전력용 반도체 장치
JP6190740B2 (ja) * 2014-03-11 2017-08-30 新電元工業株式会社 半導体装置及び半導体装置の製造方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014212455B4 (de) * 2014-06-27 2024-07-04 Robert Bosch Gmbh Diode mit einem plattenförmigen Halbleiterelement
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
JP2016100455A (ja) * 2014-11-21 2016-05-30 三菱電機株式会社 半導体装置及びその製造方法
US10290711B2 (en) 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN107251234B (zh) * 2015-02-09 2020-10-09 三菱电机株式会社 半导体装置
US9576791B2 (en) * 2015-06-01 2017-02-21 GM Global Technology Operations LLC Semiconductor devices including semiconductor structures and methods of fabricating the same
JP6611532B2 (ja) * 2015-09-17 2019-11-27 ローム株式会社 半導体装置および半導体装置の製造方法
WO2017115434A1 (ja) 2015-12-28 2017-07-06 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6820738B2 (ja) 2016-12-27 2021-01-27 三菱電機株式会社 半導体装置、電力変換装置および半導体装置の製造方法
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6815285B2 (ja) * 2017-06-26 2021-01-20 株式会社東芝 半導体装置
US10361276B1 (en) * 2018-03-17 2019-07-23 Littelfuse, Inc. Embedded field plate field effect transistor
JP6558462B2 (ja) * 2018-03-22 2019-08-14 三菱電機株式会社 半導体装置
JP7052476B2 (ja) 2018-03-27 2022-04-12 三菱電機株式会社 半導体装置
JP7030637B2 (ja) * 2018-07-23 2022-03-07 三菱電機株式会社 半導体装置の製造方法
JP6964566B2 (ja) 2018-08-17 2021-11-10 三菱電機株式会社 半導体装置およびその製造方法
JP7233256B2 (ja) * 2019-03-12 2023-03-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
US12477773B2 (en) 2020-09-17 2025-11-18 Rohm Co., Ltd. Semiconductor device including terminal electrodes
JP7580245B2 (ja) 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
US20220140132A1 (en) * 2020-11-04 2022-05-05 Cree, Inc. Passivation structures for semiconductor devices
CN114582864B (zh) * 2020-11-30 2026-02-13 华为技术有限公司 一种功率半导体器件及电子设备
JP7487094B2 (ja) * 2020-12-23 2024-05-20 株式会社 日立パワーデバイス 半導体装置
DE102021000610A1 (de) * 2021-02-08 2022-08-11 3-5 Power Electronics GmbH Stapelförmige III-V-Halbleiterdiode
CN113451137A (zh) * 2021-06-29 2021-09-28 深圳铨力半导体有限公司 晶体管制造方法、设备、计算机可读存储介质与程序产品
JP7504066B2 (ja) * 2021-08-17 2024-06-21 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP7574161B2 (ja) 2021-09-22 2024-10-28 株式会社東芝 半導体装置
JP7558134B2 (ja) * 2021-10-13 2024-09-30 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12363961B2 (en) * 2021-11-15 2025-07-15 Infineon Technologies Ag Semiconductor device
JP7692341B2 (ja) * 2021-12-16 2025-06-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7692875B2 (ja) * 2022-05-16 2025-06-16 三菱電機株式会社 パワー半導体装置およびパワー半導体装置の製造方法
DE102022124385A1 (de) 2022-09-22 2024-03-28 Infineon Technologies Ag Feldeffekttransistor mit randabschlussbereich

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH0936388A (ja) 1995-07-20 1997-02-07 Mitsubishi Electric Corp 半導体装置
JP3444081B2 (ja) * 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
JP2005057235A (ja) 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
US7259440B2 (en) * 2004-03-30 2007-08-21 Ixys Corporation Fast switching diode with low leakage current
JP2006210667A (ja) * 2005-01-28 2006-08-10 Mitsubishi Electric Corp 半導体装置
DE102005053487B4 (de) 2005-11-09 2011-06-09 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
DE102006025958B3 (de) 2006-06-02 2007-10-11 Infineon Technologies Ag Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten
JP4857948B2 (ja) * 2006-06-26 2012-01-18 株式会社デンソー 半導体装置の製造方法
JP2008091705A (ja) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5206541B2 (ja) 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
JP5003598B2 (ja) * 2008-06-05 2012-08-15 富士電機株式会社 半導体装置
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
JP2010283132A (ja) 2009-06-04 2010-12-16 Mitsubishi Electric Corp 半導体装置
CN102422416B (zh) 2009-09-07 2014-05-14 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置

Also Published As

Publication number Publication date
DE102011076243B4 (de) 2015-08-27
US20110291223A1 (en) 2011-12-01
TW201208039A (en) 2012-02-16
JP2012009811A (ja) 2012-01-12
CN102280493B (zh) 2014-02-05
TWI437690B (zh) 2014-05-11
KR101298677B1 (ko) 2013-08-21
KR101384246B1 (ko) 2014-04-11
KR20130083867A (ko) 2013-07-23
CN103633148A (zh) 2014-03-12
CN103633148B (zh) 2017-12-08
US8686469B2 (en) 2014-04-01
KR20110129817A (ko) 2011-12-02
DE102011076243A1 (de) 2011-12-01
CN102280493A (zh) 2011-12-14

Similar Documents

Publication Publication Date Title
JP5925991B2 (ja) 半導体装置
JP6598909B2 (ja) 半導体装置
JP6119577B2 (ja) 半導体装置
US8227811B2 (en) Semiconductor rectifying device
CN101908558B (zh) 半导体装置
KR101334952B1 (ko) 반도체장치
JP5256357B2 (ja) 半導体装置
US20140203393A1 (en) Semiconductor device
JP5365016B2 (ja) 半導体素子およびその製造方法
CN105047712A (zh) 纵向型半导体装置及其制造方法
JP6383971B2 (ja) 半導体装置
TW201711184A (zh) 半導體裝置及其驅動方法
TW201423845A (zh) 半導體裝置之製造方法
KR102660669B1 (ko) 수퍼 정션 반도체 장치 및 이의 제조 방법
JP7257912B2 (ja) 半導体装置
JP2025067016A (ja) 高性能逆導通半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140806

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150310

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20150317

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20150515

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160421

R150 Certificate of patent or registration of utility model

Ref document number: 5925991

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250