JP7487094B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7487094B2 JP7487094B2 JP2020213187A JP2020213187A JP7487094B2 JP 7487094 B2 JP7487094 B2 JP 7487094B2 JP 2020213187 A JP2020213187 A JP 2020213187A JP 2020213187 A JP2020213187 A JP 2020213187A JP 7487094 B2 JP7487094 B2 JP 7487094B2
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 239000011229 interlayer Substances 0.000 claims description 44
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 28
- 230000001681 protective effect Effects 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 168
- 239000010410 layer Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001698 pyrogenic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 125000006850 spacer group Chemical class 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
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Description
2…エミッタ電極
3…ゲート電極
4…ターミネーション領域
5…アクティブ領域
6…(n-型)半導体基板
7…ガードリング(p型拡散層)
8…層間絶縁膜(シリコン酸化膜)
9…フィールドプレート電極
10…有機系保護膜(ポリイミド膜)
11…窒素を含む絶縁膜
12…p型拡散層
13…ゲート電極
14…パッド電極
15…n-型拡散層
16…p型拡散層
17…コレクタ電極
18…p型拡散層
19…ゲート酸化膜(SiO2)
20…ポリシリコン膜(Poly-Si)
21…層間膜(SiO2)
22…電極膜(Ti/TiN/Al)
23…開孔(コンタクトホール)。
Claims (10)
- 半導体基板の主面に配置されたアクティブ領域と、
前記アクティブ領域を囲むように前記主面に配置されたターミネーション領域と、を備え、
前記ターミネーション領域は、前記半導体基板の主面上に形成された層間絶縁膜と、
前記層間絶縁膜を覆うように形成された有機系保護膜と、を有し、
前記層間絶縁膜と前記有機系保護膜との間に、膜厚が20nm以上50nm以下の窒素を含む絶縁膜が設けられていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記ターミネーション領域は、前記半導体基板の主面に形成されたガードリングを有することを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記ターミネーション領域は、前記層間絶縁膜上に形成され、前記層間絶縁膜に形成された開孔を貫通して前記ガードリングに接続されたフィールドプレート電極を有することを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記有機系保護膜は、前記層間絶縁膜および前記フィールドプレート電極を覆うように形成されていることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記窒素を含む絶縁膜は、前記層間絶縁膜および前記フィールドプレート電極を覆うように、前記層間絶縁膜および前記フィールドプレート電極と、前記有機系保護膜との間に設けられていることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記窒素を含む絶縁膜は、前記層間絶縁膜と前記フィールドプレート電極との間にも設けられていることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記窒素を含む絶縁膜は、前記フィールドプレート電極の上面には設けられていないことを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記アクティブ領域は、前記半導体基板の主面上に形成されたパッド電極を有し、
前記パッド電極の表面の少なくとも一部に前記窒素を含む絶縁膜が設けられていることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記窒素を含む絶縁膜は、前記層間絶縁膜および前記フィールドプレート電極を覆うように、前記層間絶縁膜および前記フィールドプレート電極と、前記有機系保護膜との間に設けられ、かつ、前記層間絶縁膜と前記フィールドプレート電極との間にも設けられていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記窒素を含む絶縁膜は、シリコン窒化膜またはシリコン酸窒化膜であることを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020213187A JP7487094B2 (ja) | 2020-12-23 | 2020-12-23 | 半導体装置 |
US17/532,741 US11881514B2 (en) | 2020-12-23 | 2021-11-22 | Semiconductor device and termination structure |
EP21211679.2A EP4020587A1 (en) | 2020-12-23 | 2021-12-01 | Vertical semiconductor power devices with insulating structures on the termination region |
TW110145885A TWI814169B (zh) | 2020-12-23 | 2021-12-08 | 半導體裝置 |
CN202111583602.0A CN114664941A (zh) | 2020-12-23 | 2021-12-22 | 半导体装置 |
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JP2020213187A JP7487094B2 (ja) | 2020-12-23 | 2020-12-23 | 半導体装置 |
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JP7487094B2 true JP7487094B2 (ja) | 2024-05-20 |
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US20220199786A1 (en) | 2022-06-23 |
US11881514B2 (en) | 2024-01-23 |
TWI814169B (zh) | 2023-09-01 |
JP2022099426A (ja) | 2022-07-05 |
TW202226594A (zh) | 2022-07-01 |
CN114664941A (zh) | 2022-06-24 |
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