JP6846687B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6846687B2 JP6846687B2 JP2017174480A JP2017174480A JP6846687B2 JP 6846687 B2 JP6846687 B2 JP 6846687B2 JP 2017174480 A JP2017174480 A JP 2017174480A JP 2017174480 A JP2017174480 A JP 2017174480A JP 6846687 B2 JP6846687 B2 JP 6846687B2
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- protective layer
- edge portion
- semiconductor device
- inorganic protective
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 172
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000011241 protective layer Substances 0.000 claims description 167
- 239000010410 layer Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 63
- 239000011229 interlayer Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 229920002577 polybenzoxazole Polymers 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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Description
半導体基板と、
前記半導体基板の上に形成され、少なくとも1つの開口部を有する層間絶縁層と、
一部が前記少なくとも1つの開口部の縁の上に形成され、他の部分が前記少なくとも1つの開口部内において前記半導体基板と電気的に接続する少なくとも1つの電極と、
内縁部および外縁部を有し、前記内縁部が前記少なくとも1つの電極の縁を覆い、前記内縁部以外が前記層間絶縁層の上に形成された無機保護層と、
前記無機保護層を覆う有機保護層と、
を備え、
前記無機保護層の前記内縁部および前記外縁部の少なくとも一方は、アンダーカットを有し、
前記アンダーカットは、前記有機保護層に接する、
半導体装置。
前記無機保護層の前記内縁部および前記外縁部の各々は、前記アンダーカットを有する、
項目1に記載の半導体装置。
前記層間絶縁層は、ノンドープシリカガラスである、
項目1または2に記載の半導体装置。
前記少なくとも1つの電極は、アルミニウムである、
項目1から3のいずれかに記載の半導体装置。
前記無機保護層は、窒化珪素または酸化珪素である、
項目1から4のいずれかに記載の半導体装置。
前記有機保護層は、ポリイミドまたはポリベンゾオキサゾールである、
項目1から5のいずれかに記載の半導体装置。
前記半導体基板に平行な方向において、前記アンダーカットの奥行きは、0.45μm以上1μm以下である、
項目1から6のいずれかに記載の半導体装置。
前記半導体基板に平行な方向において、前記無機保護層の前記内縁部の前記アンダーカットの奥行きは、前記無機保護層の前記外縁部の前記アンダーカットの奥行きよりも大きい、
項目1から7のいずれかに記載の半導体装置。
前記半導体基板に垂直な方向において、前記有機保護層の厚さは、3μm以上10μm以下である、
項目1から8のいずれかに記載の半導体装置。
前記半導体装置はMOS−FETであって、
前記電極を3つ含み、
前記3つの電極は、2つのソース電極および1つのゲート電極である、
項目1から9のいずれかに記載の半導体装置。
前記半導体装置はショットキーバリアダイオードであって、
前記電極を1つ含む、
項目1から9のいずれかに記載の半導体装置。
半導体基板を用意する第1の工程と、
前記半導体基板の上に少なくとも1つの開口部を有する層間絶縁層を形成する第2の工程と、
少なくとも1つの電極の一部を前記少なくとも1つの開口部の縁の上に形成し、他の部分を前記少なくとも1つの開口部内における前記半導体基板と電気的に接続させる第3の工程と、
内縁部および外縁部を有する無機保護層の、前記内縁部で前記少なくとも1つの電極の縁を覆い、前記内縁部以外を前記層間絶縁層の上に形成する第4の工程と、
前記無機保護層を有機保護層で覆う第5の工程と、
を包含し、
前記第4の工程において、前記少なくとも1つの電極および前記層間絶縁層の上に形成した無機保護膜の上にレジスト層を形成し、エッチングをすることによって前記無機保護層を形成する際に、前記無機保護層の前記内縁部および前記外縁部の少なくとも一方にアンダーカットを形成する、
半導体装置の製造方法。
異方性エッチングをした後に等方性エッチングをすることにより、前記アンダーカットを形成する、
項目12に記載の半導体装置の製造方法。
等方性エッチングをすることにより、前記アンダーカットを形成する、
項目12に記載の半導体装置の製造方法。
前記等方性エッチングを、フッ化炭素ガスおよび酸素ガスの混合ガスを用いて実施する、
項目13または14に記載の半導体装置の製造方法。
以下では、模式図を用いて、本開示を包括的に説明する。本開示は半導体装置の表面保護層に適用することができる。半導体装置は、例えば、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)またはショットキーバリアダイオードなどである。また、炭化珪素以外の半導体材料を半導体装置に用いてもよい。
次に、実施形態1における無機保護層125および有機保護層126の配置をMOSFETへ適用した例を説明する。以下では、MOSFETを単に半導体装置と称する。
次に、実施形態1における無機保護層125および有機保護層126の配置をショットキーバリアダイオードへ適用した例を説明する。以下では、ショットキーバリアダイオードを単に半導体装置と称する。
100A :活性領域
100E :終端領域
100F :FLR領域
100S スクライブライン領域
100u ユニットセル
101 半導体基板
102 ドリフト層、第1半導体層
103 バッファ層、第1ボディ領域
104 ソース領域
105 第1コンタクト領域
106 第2半導体層
107 ゲート絶縁膜
108 ゲート電極
109 ソース電極
110 電極110、第2電極、ドレイン電極
110F 領域
111 層間絶縁層
111c 開口部
111e 開口部の縁
112 電極、上部ソース電極、上部電極
112e 電極の縁
112P パッド領域、ソースパッド領域
113 裏面電極、配線電極
114 上部ゲート電極
114P ゲートパッド領域
120 リング領域
121 高濃度領域
122 低濃度領域
125 無機保護層
125c アンダーカット
125F 無機保護膜
125i 無機保護層の内縁部
125j 無機保護層外縁部
126 有機保護層
126i 有機保護層の内縁部
126j 有機保護層の外縁部
127 レジスト層
130 第2コンタクト領域
151 終端領域
152 バリア領域
153 ガードリング領域
154 FLR領域
159 第1電極
Claims (15)
- 半導体基板と、
前記半導体基板の上に形成され、少なくとも1つの開口部を有する層間絶縁層と、
一部が前記少なくとも1つの開口部の縁の上に形成され、他の部分が前記少なくとも1つの開口部内において前記半導体基板と電気的に接続する少なくとも1つの電極と、
内縁部および外縁部を有し、前記内縁部が前記少なくとも1つの電極の縁を覆い、前記内縁部以外が前記層間絶縁層の上に形成された無機保護層と、
前記無機保護層を覆う有機保護層と、
を備え、
前記無機保護層の前記内縁部および前記外縁部の少なくとも一方は、アンダーカットを有し、
前記アンダーカットは、前記有機保護層に接する、
半導体装置。 - 前記無機保護層の前記内縁部および前記外縁部の各々は、前記アンダーカットを有する、
請求項1に記載の半導体装置。 - 前記層間絶縁層は、ノンドープシリカガラスである、
請求項1または2に記載の半導体装置。 - 前記少なくとも1つの電極は、アルミニウムである、
請求項1から3のいずれかに記載の半導体装置。 - 前記無機保護層は、窒化珪素または酸化珪素である、
請求項1から4のいずれかに記載の半導体装置。 - 前記有機保護層は、ポリイミドまたはポリベンゾオキサゾールである、
請求項1から5のいずれかに記載の半導体装置。 - 前記半導体基板に平行な方向において、前記アンダーカットの奥行きは、0.45μm以上1μm以下である、
請求項1から6のいずれかに記載の半導体装置。 - 前記半導体基板に平行な方向において、前記無機保護層の前記内縁部の前記アンダーカットの奥行きは、前記無機保護層の前記外縁部の前記アンダーカットの奥行きよりも大きい、
請求項1から7のいずれかに記載の半導体装置。 - 前記半導体基板に垂直な方向において、前記有機保護層の厚さは、3μm以上10μm以下である、
請求項1から8のいずれかに記載の半導体装置。 - 前記半導体装置はMOS−FETであって、
前記電極を3つ含み、
前記3つの電極は、2つのソース電極および1つのゲート電極である、
請求項1から9のいずれかに記載の半導体装置。 - 前記半導体装置はショットキーバリアダイオードであって、
前記電極を1つ含む、
請求項1から9のいずれかに記載の半導体装置。 - 半導体基板を用意する第1の工程と、
前記半導体基板の上に少なくとも1つの開口部を有する層間絶縁層を形成する第2の工程と、
少なくとも1つの電極の一部を前記少なくとも1つの開口部の縁の上に形成し、他の部分を前記少なくとも1つの開口部内における前記半導体基板と電気的に接続させる第3の工程と、
内縁部および外縁部を有する無機保護層の、前記内縁部で前記少なくとも1つの電極の縁を覆い、前記内縁部以外を前記層間絶縁層の上に形成する第4の工程と、
前記無機保護層を有機保護層で覆う第5の工程と、
を包含し、
前記第4の工程において、前記少なくとも1つの電極および前記層間絶縁層の上に形成した無機保護膜の上にレジスト層を形成し、エッチングをすることによって前記無機保護層を形成する際に、前記無機保護層の前記内縁部および前記外縁部の少なくとも一方にアンダーカットを形成する、
半導体装置の製造方法。 - 異方性エッチングをした後に等方性エッチングをすることにより、前記アンダーカットを形成する、
請求項12に記載の半導体装置の製造方法。 - 等方性エッチングをすることにより、前記アンダーカットを形成する、
請求項12に記載の半導体装置の製造方法。 - 前記無機保護層は窒化珪素であり、
前記等方性エッチングを、フッ化炭素ガスおよび酸素ガスの混合ガスを用いて実施する、
請求項13または14に記載の半導体装置の製造方法。
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