TWI437690B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI437690B TWI437690B TW100112417A TW100112417A TWI437690B TW I437690 B TWI437690 B TW I437690B TW 100112417 A TW100112417 A TW 100112417A TW 100112417 A TW100112417 A TW 100112417A TW I437690 B TWI437690 B TW I437690B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- conductivity type
- semiconductor device
- main surface
- diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010120180 | 2010-05-26 | ||
| JP2011021828A JP5925991B2 (ja) | 2010-05-26 | 2011-02-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201208039A TW201208039A (en) | 2012-02-16 |
| TWI437690B true TWI437690B (zh) | 2014-05-11 |
Family
ID=44924873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100112417A TWI437690B (zh) | 2010-05-26 | 2011-04-11 | 半導體裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8686469B2 (https=) |
| JP (1) | JP5925991B2 (https=) |
| KR (2) | KR101298677B1 (https=) |
| CN (2) | CN103633148B (https=) |
| DE (1) | DE102011076243B4 (https=) |
| TW (1) | TWI437690B (https=) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8766413B2 (en) | 2009-11-02 | 2014-07-01 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR101604234B1 (ko) * | 2012-03-05 | 2016-03-17 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
| KR101654223B1 (ko) | 2012-04-13 | 2016-09-05 | 미쓰비시덴키 가부시키가이샤 | 다이오드 |
| DE112012006967B4 (de) | 2012-10-02 | 2022-09-01 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
| CN104969360B (zh) * | 2013-03-25 | 2018-04-20 | 富士电机株式会社 | 半导体装置 |
| US9257511B2 (en) * | 2013-03-26 | 2016-02-09 | Infineon Technologies Ag | Silicon carbide device and a method for forming a silicon carbide device |
| JP6108451B2 (ja) * | 2013-04-05 | 2017-04-05 | ラピスセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
| CN103208531B (zh) * | 2013-04-07 | 2015-07-15 | 株洲南车时代电气股份有限公司 | 一种快恢复二极管frd芯片及其制作方法 |
| CN107768427A (zh) * | 2013-06-12 | 2018-03-06 | 三菱电机株式会社 | 半导体装置 |
| WO2015004716A1 (ja) * | 2013-07-08 | 2015-01-15 | 三菱電機株式会社 | 半導体装置 |
| TWI614898B (zh) * | 2013-12-06 | 2018-02-11 | Diodes Taiwan S.A.R.L. | 終止區結構及其製造方法 |
| JP6165271B2 (ja) | 2014-01-29 | 2017-07-19 | 三菱電機株式会社 | 電力用半導体装置 |
| KR101917486B1 (ko) * | 2014-01-29 | 2018-11-09 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 |
| JP6190740B2 (ja) * | 2014-03-11 | 2017-08-30 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| DE102014005879B4 (de) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertikale Halbleitervorrichtung |
| DE102014212455B4 (de) * | 2014-06-27 | 2024-07-04 | Robert Bosch Gmbh | Diode mit einem plattenförmigen Halbleiterelement |
| JP2016029685A (ja) * | 2014-07-25 | 2016-03-03 | 株式会社東芝 | 半導体装置 |
| JP2016100455A (ja) * | 2014-11-21 | 2016-05-30 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US10290711B2 (en) | 2015-01-27 | 2019-05-14 | Mitsubishi Electric Corporation | Semiconductor device |
| CN107251234B (zh) * | 2015-02-09 | 2020-10-09 | 三菱电机株式会社 | 半导体装置 |
| US9576791B2 (en) * | 2015-06-01 | 2017-02-21 | GM Global Technology Operations LLC | Semiconductor devices including semiconductor structures and methods of fabricating the same |
| JP6611532B2 (ja) * | 2015-09-17 | 2019-11-27 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2017115434A1 (ja) | 2015-12-28 | 2017-07-06 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
| JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
| JP6820738B2 (ja) | 2016-12-27 | 2021-01-27 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
| JP6854654B2 (ja) * | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
| JP6815285B2 (ja) * | 2017-06-26 | 2021-01-20 | 株式会社東芝 | 半導体装置 |
| US10361276B1 (en) * | 2018-03-17 | 2019-07-23 | Littelfuse, Inc. | Embedded field plate field effect transistor |
| JP6558462B2 (ja) * | 2018-03-22 | 2019-08-14 | 三菱電機株式会社 | 半導体装置 |
| JP7052476B2 (ja) | 2018-03-27 | 2022-04-12 | 三菱電機株式会社 | 半導体装置 |
| JP7030637B2 (ja) * | 2018-07-23 | 2022-03-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6964566B2 (ja) | 2018-08-17 | 2021-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP7233256B2 (ja) * | 2019-03-12 | 2023-03-06 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| US12477773B2 (en) | 2020-09-17 | 2025-11-18 | Rohm Co., Ltd. | Semiconductor device including terminal electrodes |
| JP7580245B2 (ja) | 2020-11-02 | 2024-11-11 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US20220140132A1 (en) * | 2020-11-04 | 2022-05-05 | Cree, Inc. | Passivation structures for semiconductor devices |
| CN114582864B (zh) * | 2020-11-30 | 2026-02-13 | 华为技术有限公司 | 一种功率半导体器件及电子设备 |
| JP7487094B2 (ja) * | 2020-12-23 | 2024-05-20 | 株式会社 日立パワーデバイス | 半導体装置 |
| DE102021000610A1 (de) * | 2021-02-08 | 2022-08-11 | 3-5 Power Electronics GmbH | Stapelförmige III-V-Halbleiterdiode |
| CN113451137A (zh) * | 2021-06-29 | 2021-09-28 | 深圳铨力半导体有限公司 | 晶体管制造方法、设备、计算机可读存储介质与程序产品 |
| JP7504066B2 (ja) * | 2021-08-17 | 2024-06-21 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
| JP7574161B2 (ja) | 2021-09-22 | 2024-10-28 | 株式会社東芝 | 半導体装置 |
| JP7558134B2 (ja) * | 2021-10-13 | 2024-09-30 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US12363961B2 (en) * | 2021-11-15 | 2025-07-15 | Infineon Technologies Ag | Semiconductor device |
| JP7692341B2 (ja) * | 2021-12-16 | 2025-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7692875B2 (ja) * | 2022-05-16 | 2025-06-16 | 三菱電機株式会社 | パワー半導体装置およびパワー半導体装置の製造方法 |
| DE102022124385A1 (de) | 2022-09-22 | 2024-03-28 | Infineon Technologies Ag | Feldeffekttransistor mit randabschlussbereich |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
| JPH05152574A (ja) * | 1991-11-29 | 1993-06-18 | Fuji Electric Co Ltd | 半導体装置 |
| JPH0936388A (ja) | 1995-07-20 | 1997-02-07 | Mitsubishi Electric Corp | 半導体装置 |
| JP3444081B2 (ja) * | 1996-02-28 | 2003-09-08 | 株式会社日立製作所 | ダイオード及び電力変換装置 |
| JP2005057235A (ja) | 2003-07-24 | 2005-03-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路 |
| US7259440B2 (en) * | 2004-03-30 | 2007-08-21 | Ixys Corporation | Fast switching diode with low leakage current |
| JP2006210667A (ja) * | 2005-01-28 | 2006-08-10 | Mitsubishi Electric Corp | 半導体装置 |
| DE102005053487B4 (de) | 2005-11-09 | 2011-06-09 | Infineon Technologies Ag | Leistungs-IGBT mit erhöhter Robustheit |
| DE102006025958B3 (de) | 2006-06-02 | 2007-10-11 | Infineon Technologies Ag | Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten |
| JP4857948B2 (ja) * | 2006-06-26 | 2012-01-18 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2008091705A (ja) * | 2006-10-03 | 2008-04-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP5206541B2 (ja) | 2008-04-01 | 2013-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP4743447B2 (ja) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
| JP5003598B2 (ja) * | 2008-06-05 | 2012-08-15 | 富士電機株式会社 | 半導体装置 |
| JP5381420B2 (ja) * | 2008-07-22 | 2014-01-08 | 富士電機株式会社 | 半導体装置 |
| JP2010283132A (ja) | 2009-06-04 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置 |
| CN102422416B (zh) | 2009-09-07 | 2014-05-14 | 丰田自动车株式会社 | 具备具有二极管区和igbt区的半导体基板的半导体装置 |
-
2011
- 2011-02-03 JP JP2011021828A patent/JP5925991B2/ja active Active
- 2011-04-11 TW TW100112417A patent/TWI437690B/zh active
- 2011-04-25 US US13/093,397 patent/US8686469B2/en active Active
- 2011-05-19 KR KR1020110047223A patent/KR101298677B1/ko active Active
- 2011-05-20 DE DE102011076243.4A patent/DE102011076243B4/de active Active
- 2011-05-26 CN CN201310646732.3A patent/CN103633148B/zh active Active
- 2011-05-26 CN CN201110150632.2A patent/CN102280493B/zh active Active
-
2013
- 2013-06-10 KR KR1020130066032A patent/KR101384246B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011076243B4 (de) | 2015-08-27 |
| US20110291223A1 (en) | 2011-12-01 |
| TW201208039A (en) | 2012-02-16 |
| JP2012009811A (ja) | 2012-01-12 |
| CN102280493B (zh) | 2014-02-05 |
| KR101298677B1 (ko) | 2013-08-21 |
| KR101384246B1 (ko) | 2014-04-11 |
| JP5925991B2 (ja) | 2016-05-25 |
| KR20130083867A (ko) | 2013-07-23 |
| CN103633148A (zh) | 2014-03-12 |
| CN103633148B (zh) | 2017-12-08 |
| US8686469B2 (en) | 2014-04-01 |
| KR20110129817A (ko) | 2011-12-02 |
| DE102011076243A1 (de) | 2011-12-01 |
| CN102280493A (zh) | 2011-12-14 |
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