CZ304828B6 - Způsob řezání monokrystalu v řezacím stroji a zařízení pro provádění tohoto způsobu - Google Patents

Způsob řezání monokrystalu v řezacím stroji a zařízení pro provádění tohoto způsobu Download PDF

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Publication number
CZ304828B6
CZ304828B6 CZ2003-3395A CZ20033395A CZ304828B6 CZ 304828 B6 CZ304828 B6 CZ 304828B6 CZ 20033395 A CZ20033395 A CZ 20033395A CZ 304828 B6 CZ304828 B6 CZ 304828B6
Authority
CZ
Czechia
Prior art keywords
single crystal
cutting
plane
orientation
angle
Prior art date
Application number
CZ2003-3395A
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Czech (cs)
English (en)
Other versions
CZ20033395A3 (cs
Inventor
Ralf Hammer
Ralf Gruszynsky
André Kleinwechter
Tilo Flade
Original Assignee
Freiberger Compound Materials Gmbh
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Publication date
Application filed by Freiberger Compound Materials Gmbh filed Critical Freiberger Compound Materials Gmbh
Publication of CZ20033395A3 publication Critical patent/CZ20033395A3/cs
Publication of CZ304828B6 publication Critical patent/CZ304828B6/cs

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0088Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G01N23/20016Goniometers

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CZ2003-3395A 2001-06-13 2002-06-11 Způsob řezání monokrystalu v řezacím stroji a zařízení pro provádění tohoto způsobu CZ304828B6 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10128630A DE10128630A1 (de) 2001-06-13 2001-06-13 Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche sowie Vorrichtung und Verfahren zum Trennen eines Einkristalls in einer Trennmaschine

Publications (2)

Publication Number Publication Date
CZ20033395A3 CZ20033395A3 (cs) 2004-05-12
CZ304828B6 true CZ304828B6 (cs) 2014-11-26

Family

ID=7688120

Family Applications (1)

Application Number Title Priority Date Filing Date
CZ2003-3395A CZ304828B6 (cs) 2001-06-13 2002-06-11 Způsob řezání monokrystalu v řezacím stroji a zařízení pro provádění tohoto způsobu

Country Status (11)

Country Link
US (1) US6923171B2 (enExample)
EP (2) EP1568457B1 (enExample)
JP (2) JP4716652B2 (enExample)
CN (2) CN100546793C (enExample)
AT (1) ATE369956T1 (enExample)
CZ (1) CZ304828B6 (enExample)
DE (3) DE10128630A1 (enExample)
RU (1) RU2296671C2 (enExample)
SK (1) SK286829B6 (enExample)
TW (1) TWI224670B (enExample)
WO (1) WO2002100619A1 (enExample)

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DE102008028213A1 (de) * 2008-06-06 2009-12-10 Gebr. Schmid Gmbh & Co. Verfahren zum Befestigen eines Silizium-Blocks an einem Träger dafür und entsprechende Anordnung
JP5007706B2 (ja) * 2008-06-30 2012-08-22 信越半導体株式会社 ワークの切断方法
KR100995877B1 (ko) * 2008-07-23 2010-11-22 한국기계연구원 투과전자현미경의 고니오미터를 이용한 이웃하는 결정립의결정학적 방위관계 측정장치 및 그에 의한 결정립계 특성규명 방법
CN101486231B (zh) * 2009-01-22 2011-12-07 四川大学 黄铜矿类负单轴晶体制备红外非线性光学元件的定向切割方法
CN101486232B (zh) * 2009-01-22 2011-09-07 四川大学 黄铜矿类正单轴晶体制备红外非线性光学元件的定向切割方法
CN101733848B (zh) * 2009-12-29 2012-01-18 西北工业大学 定向切割晶体任意晶面的简便方法
DE102010007459B4 (de) * 2010-02-10 2012-01-19 Siltronic Ag Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Kristall aus Halbleitermaterial
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CN102152410A (zh) * 2010-12-23 2011-08-17 万向硅峰电子股份有限公司 一种旋转单晶棒调整晶向偏移的切割方法
JP5678653B2 (ja) * 2010-12-28 2015-03-04 三菱化学株式会社 六方晶系半導体板状結晶の製造方法
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CN103503119B (zh) * 2011-06-02 2016-10-19 住友电气工业株式会社 碳化硅基板的制造方法
CN102490278B (zh) * 2011-11-30 2014-07-16 峨嵋半导体材料研究所 线切割晶体激光仪定向切割方法
KR101360906B1 (ko) * 2012-11-16 2014-02-11 한국표준과학연구원 고분해능 x-선 로킹 커브 측정을 이용한 단결정 웨이퍼의 면방위 측정 방법
KR101449572B1 (ko) * 2013-03-25 2014-10-13 한국생산기술연구원 리프트-업 스윙을 구현하는 와이어 쏘
JP6132621B2 (ja) * 2013-03-29 2017-05-24 Sumco Techxiv株式会社 半導体単結晶インゴットのスライス方法
CN105684125A (zh) * 2013-09-24 2016-06-15 硅电子股份公司 半导体晶片以及制造该半导体晶片的方法
US9682495B2 (en) * 2013-09-30 2017-06-20 Gtat Corporation Method and apparatus for processing sapphire
JP6459524B2 (ja) * 2015-01-08 2019-01-30 株式会社ジェイテクト 複合研削盤および研削方法
CN104985709B (zh) * 2015-06-16 2017-01-11 浙江海纳半导体有限公司 调整单晶棒晶向的方法及测量方法
JP6610026B2 (ja) * 2015-06-23 2019-11-27 三星ダイヤモンド工業株式会社 スクライブ装置
JP6272801B2 (ja) * 2015-07-27 2018-01-31 信越半導体株式会社 ワークホルダー及びワークの切断方法
JP6349290B2 (ja) * 2015-09-03 2018-06-27 信越半導体株式会社 単結晶ウェーハの表裏判定方法
CN105269696B (zh) * 2015-10-30 2017-04-05 江苏吉星新材料有限公司 一种蓝宝石晶体的复合定向方法
WO2017091945A1 (en) * 2015-11-30 2017-06-08 Rhodia Operations Wafering process for water based slurries
CN105842263A (zh) * 2016-03-18 2016-08-10 中锗科技有限公司 一种偏晶向太阳能锗单晶定向仪及其检测方法
JP6690983B2 (ja) * 2016-04-11 2020-04-28 株式会社ディスコ ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法
JP6222393B1 (ja) * 2017-03-21 2017-11-01 信越半導体株式会社 インゴットの切断方法
CN108312370B (zh) * 2017-12-20 2020-05-01 天通控股股份有限公司 一种基于水平传感器定位晶体的定向加工方法
JP6923067B2 (ja) * 2018-02-27 2021-08-18 株式会社Sumco 半導体単結晶インゴットのスライス方法
CN108621316B (zh) * 2018-05-03 2020-02-18 大连理工大学 一种易潮解光学晶体的水溶解辅助精密高效切割方法
DE102018221922A1 (de) * 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium
JP7148437B2 (ja) * 2019-03-01 2022-10-05 信越半導体株式会社 ワークの切断加工方法及びワークの切断加工装置
US11921061B2 (en) * 2019-08-30 2024-03-05 National Institute Of Advanced Industrial Science And Technology Orientation degree distribution calculation method, orientation degree distribution analyzer, and orientation degree distribution analysis program
US12468072B2 (en) * 2020-03-05 2025-11-11 Xinmei Fontana Holding (Hong Kong) Limited Optical film and micro LED display comprising thereof
CN111745305B (zh) * 2020-05-23 2022-03-04 山东大学 一种实现金刚石单晶衬底表面取向的方法
EP3922388A1 (de) * 2020-06-10 2021-12-15 Siltronic AG Verfahren zum abtrennen einer vielzahl von scheiben mittels einer drahtsäge von werkstücken während einer abfolge von abtrennvorgängen
DE102020209092A1 (de) * 2020-07-21 2022-01-27 Sicrystal Gmbh Kristallstrukturorientierung in Halbleiter-Halbzeugen und Halbleitersubstraten zum Verringern von Sprüngen und Verfahren zum Einstellen von dieser
CN112590032B (zh) * 2020-12-03 2022-12-02 天津市环智新能源技术有限公司 一种太阳能硅片及其粗糙度控制方法
CN113787636B (zh) * 2021-07-09 2022-05-27 麦斯克电子材料股份有限公司 一种用于12寸半导体晶圆的手动粘棒方法
CN114689405B (zh) * 2022-03-29 2024-11-12 湘潭大学 一种确定铸态立方晶系单晶体三维晶体取向的方法
CN115648467A (zh) * 2022-11-08 2023-01-31 万华化学集团电子材料有限公司 一种<100>型300mm单晶硅棒沿特定晶向切割的工艺方法
CN115881602B (zh) * 2022-12-12 2026-05-12 上海新昇半导体科技有限公司 一种晶棒粘棒前的晶向定位方法
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Also Published As

Publication number Publication date
ATE369956T1 (de) 2007-09-15
SK14932003A3 (sk) 2004-06-08
DE10128630A1 (de) 2003-01-02
JP4716652B2 (ja) 2011-07-06
EP1568457A1 (de) 2005-08-31
EP1568457B1 (de) 2007-08-22
DE50210785D1 (de) 2007-10-04
EP1399306A1 (de) 2004-03-24
RU2004100543A (ru) 2005-06-10
TWI224670B (en) 2004-12-01
CN100569475C (zh) 2009-12-16
RU2296671C2 (ru) 2007-04-10
CN100546793C (zh) 2009-10-07
CN1736681A (zh) 2006-02-22
EP1399306B1 (de) 2007-08-15
US6923171B2 (en) 2005-08-02
SK286829B6 (sk) 2009-06-05
DE50210714D1 (de) 2007-09-27
JP2011003929A (ja) 2011-01-06
US20040168682A1 (en) 2004-09-02
JP2004533347A (ja) 2004-11-04
WO2002100619A1 (de) 2002-12-19
CN1529647A (zh) 2004-09-15
JP5357122B2 (ja) 2013-12-04
CZ20033395A3 (cs) 2004-05-12

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