EP1568457B1 - Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche - Google Patents

Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche Download PDF

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Publication number
EP1568457B1
EP1568457B1 EP05010482A EP05010482A EP1568457B1 EP 1568457 B1 EP1568457 B1 EP 1568457B1 EP 05010482 A EP05010482 A EP 05010482A EP 05010482 A EP05010482 A EP 05010482A EP 1568457 B1 EP1568457 B1 EP 1568457B1
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EP
European Patent Office
Prior art keywords
single crystal
orientation
angle
reference axis
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP05010482A
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German (de)
English (en)
French (fr)
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EP1568457A1 (de
Inventor
Ralf Hammer
Ralf Gruszynsky
André Dr. Kleinwechter
Tilo Dr. Flade
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Freiberger Compound Materials GmbH
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Freiberger Compound Materials GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0088—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G01N23/20016—Goniometers

Definitions

  • the invention relates to an apparatus and method for determining the orientation of a crystallographic plane relative to a crystal surface.
  • misorientation For certain applications semiconductor wafers with a so-called misorientation are needed.
  • a certain crystallographic plane eg the (100) plane
  • the misorientation angle ⁇ in this case is the angle which the vector [100], which is perpendicular to the (100) plane, with the normal vector N o , which is perpendicular to the wafer surface 2 includes. If such a misorientation is required, a single crystal from which the wafers are cut is tilted about the predetermined angle ⁇ about an axis T lying in the parting plane, ie, the wafer surface 2.
  • the wire saw apparatus further includes means 5 and 6 for applying a paste containing silicon carbide grains to the wires 4a, 4b, 4c on each side of the single crystal 3.
  • a device for applying a cooling lubricant In wire cutting with electroplated cutting grains, there is further provided a device for applying a cooling lubricant.
  • wire saws with an orientation unit known which allows for setting the desired misalignment, as shown in Fig. 2b, only an adjustment in a plane parallel to the wire field 4 level.
  • the crystal outside the wire saw is measured on an X-ray goniometer and glued onto a workpiece base, that the misalignment to be set in the horizontal plane, ie the angle ⁇ shown in Fig. 1 in a plane parallel to the wire 4.
  • the measured values of the X-ray goniometer refer to a stop surface of the workpiece base, which is then applied to a reference surface on the wire saw. Then the desired orientation is adjusted horizontally.
  • the method and apparatus have the advantage that by precisely determining the orientation of a crystallographic plane relative to a crystal surface, the quality of the wafers separated from the single crystal is increased and higher feed rates are enabled on separation. Due to the improved quality of the wafers produced otherwise usual finishing steps can be largely eliminated. Furthermore, the orientation accuracy can be increased.
  • the forces acting on the wafer during wire sawing will first be described below with reference to FIGS. 1 to 4.
  • the wires 4a, 4b, 4c penetrate into the single crystal 3 to cut off slices 1a, 1b, 1c, etc. constituting the wafers.
  • the diamond grains of the wires produce in the separation process after reaching a critical depth of penetration into the single crystal 3 microcracks, which lead by mutual cross-linking for material removal.
  • This critical penetration depth depends on the orientation of a particular crystallographic direction K lying in the wafer surface 2, for example the [010] direction, relative to the feed direction V, which will be explained below.
  • the monocrystal 3 has an orientation feature in the form of a flat outer surface section 7, the so-called flat, which has been mounted in such a defined manner after the growth of the monocrystal 1 that an angle ⁇ ,
  • the known crystallographic direction K with the normal N F on the flat outer surface portion in the wafer surface 2 is known.
  • an angle ⁇ between the determined crystallographic direction K and the advancing direction V of the single crystal in a plane perpendicular to the center longitudinal axis M of the single crystal and thus in the parting plane is also known.
  • a notch called notch may be provided on the outside of the single crystal. Decisive is only an external feature whose arrangement is known to the particular crystallographic direction K.
  • FIGS. 4a to 4d respectively show the warp and the bow for a wafer as a function of the angular setting of the determined crystallographic direction K relative to the feed direction V.
  • a small warp or a small amount of the bow value is desired can be achieved either by reducing the feed rate v or, for a high feed rate, by adjusting the angle of the crystallographic direction K relative to the feed direction.
  • a feed rate of 2 mm / min For example, minimum bow values at about 60 °, 150 °, 240 ° and 330 ° are achieved.
  • the resültierende force which arises from the sum of the constraining forces F x - or F x + , minimal.
  • the preferred angles at which the compulsory forces described above compensate each other and the wires without transverse deflection penetrate into the single crystal depend on the material of the single crystal, or in the case of semiconductors also on the doping, and on other factors. They are to be determined empirically for each single crystal material.
  • a device for orienting a single crystal in the cutting machine, in particular in the wire sawing device allows the utilization of this effect and at the same time a precise adjustment of a desired misalignment ⁇ .
  • the apparatus for orienting a single crystal in a cutting machine has an apparatus 10 according to the invention for determining the angle between a crystallographic plane, for example the (100) plane and the crystal end face 2, located outside the actual cutting machine ,
  • the device 10 has a holder 11 for the single crystal 3 with a flat surface 11a, which is preferably designed as a vacuum chip and in which the substantially cylindrical single crystal is held on an end face by the action of negative pressure.
  • the azimuthal orientation of the single crystal ie the angular position in the later parting plane, is defined by the orientation of the flange 7 or other external feature in the device 10.
  • the single crystal 3 is either glued to a saw pad 12, with which it can be used later in the wire saw device or gluing takes place after the measurement.
  • the angular position of the flats 7 provided on the monocrystal 3 relative to the holder 11 is adjusted via a stop 13 so that the angle ⁇ which the particular crystallographic direction K has relative to the feed direction in the cutting machine can be seen in FIG. 5b , Has a previously empirically determined value as described above, for the minimum wire deflection and thus the maximum possible feed rate.
  • the holder 11 is movable in the vertical direction. Further, the holder 11 by means of a rotary mechanism, not shown, about its central axis which is parallel to the central longitudinal axis of the single crystal, rotatable.
  • an autocollimator 14 Opposite or above the free surface 2 of the single crystal, which forms the later surface of the first wafer to be separated, an autocollimator 14 is provided, which is positioned so that its optical axis O coincides with the normal to the surface 11a of the holder 11.
  • an X-ray goniometer is provided consisting of an X-ray tube 15 and an associated detector 16 which is movable in a predefined angular range, for example of about 20 ° about an origin on the surface 2 of the single crystal.
  • a plane-parallel optical mirror 17 is provided. The mirror 17 is fastened by means of a vacuum mechanism, not shown, on the end face 2 of the single crystal.
  • the mirror 17 is further attachable to the end face 2 of the single crystal 3 so as to lie on the optical axis of the autocollimation telescope.
  • the measuring range of the autocollimation telescope is about ⁇ 1 °.
  • an unillustrated optical wedge plate with a defined wedge angle is provided which effects a defined beam deflection of eg 2 ° about the surface to be measured to bring back into the measuring range.
  • the control of the device 10 is designed so that automatically an angle measurement of the mirror orientation is carried out with the autocollimation telescope and then a measurement of the desired crystallographic plane, for example, the (100) network level by means of the X-ray goniometer.
  • the control is also designed so that in a second step, the same measurements can be performed again with a rotated by 90 ° about the central longitudinal axis M single crystal.
  • a device for separating the monocrystal which in this embodiment is in the form of a wire saw device 20, comprises wire rollers 21, over which the wire field 4 is guided in the horizontal direction and deflection rollers 22 underneath for returning the latter Wire field below the actual wire level, in which the separation takes place.
  • a feed unit 23 is provided, with which the single crystal can be moved in a vertical direction relative to the wire field at a certain feed speed v via the saw support 12, which is fastened to an XY positioning unit 24.
  • the XY positioning unit 24 is adapted to receive the single crystal 3 with respect to a machine side coordinate system X M , Y M , Z M in a direction parallel to the wire field 4 which is the X M direction and in a direction perpendicular to the wire field 4, which is the Y M direction, can adjust.
  • the swivel range is about ⁇ 5 ° in the X M direction and about ⁇ 2 ° in the Y M direction.
  • An autocollimation telescope 25, which is identical to the autocollimation telescope 14 of the device 10, is also provided, the optical axis O of which lies in a plane parallel to the wire field 4.
  • the autocollimation telescope 25 is further arranged so that its optical axis with built-single crystal is approximately equal to the center axis of the single crystal.
  • an evaluation unit 26 is provided.
  • the device 20 includes a mirror 27, which is identical to the mirror 17 of the device 10 and which is fixed by means of a vacuum mechanism, not shown, on the face 2 of the monocrystal 3 facing the autocollimation telescope 25. Further, an optical wedge plate 28 in a rotatable socket 29 for generating a defined beam deflection of eg 2 ° provided. Mirror 27 and wedge plate 28 are attached to a bracket 30 that includes the vacuum mechanism. There is also provided a stop 31 which defines a defined distance of the mirror 27 with the wedge plate 28 from the XY positioning device 24.
  • a reference surface 32 is provided, which is attached to the feed unit 23 opposite the Autokollimationsfernrohr 25.
  • the reference surface has a high flatness and mechanical stability and an easy-to-clean surface to easily remove soiling before measurement. With the aid of a camera, not shown, which can be mounted directly on the reference surface, the reference surface in the horizontal plane parallel to the wire field 4 can be aligned.
  • the operation of the device 10 according to the invention and the device 20 not according to the invention is as follows.
  • the angle is chosen so that the flat 7 is oriented in the azimuthal direction such that the particular crystallographic direction K is at a predetermined angle ⁇ to the feed direction V, in which the force acting on the wire constraining forces almost cancel each other, thus one To be able to set the largest possible feed rate.
  • Fig. the angle is chosen so that the flat 7 is oriented in the azimuthal direction such that the particular crystallographic direction K is at a predetermined angle ⁇ to the feed direction V, in which the force acting on the wire constraining forces almost cancel each other, thus one To be able to set the largest possible feed rate.
  • the single crystal 3 together with the saw pad 12 is set on the holder 11 of the apparatus for determining the orientation of the crystallographic plane relative to the end face 2 of the single crystal by means of a vacuum mechanism, not shown.
  • the vacuum mechanism allows the direct contact of the single crystal 3 on the surface 11a of the holder 11.
  • the holder 11 is moved to a certain height position, so that the end face 2 of the single crystal is in the focal plane of the X-ray goniometer.
  • the mirror 17 is placed on the end face 2 by means of the vacuum mechanism and fixed.
  • an angle measurement of the mirror surface is made by determining a deviation of a reflected crosshair from the crosshair projected onto the mirror surface.
  • the surface of the mirror 17 is oriented parallel to the end face 2 of the single crystal 3 and the optical axis O of the autocollimation telescope 14 is perpendicular to the surface 11 a of the holder 11, which forms the reference surface, can be with this measurement, the angular adjustment of the mirror surface or determine the end face of the single crystal relative to the surface 11 a of the holder 11.
  • the single crystal is measured without a saw pad, wherein the orientation of the flat in the X-ray device is defined, for example, by a stop.
  • the desired crystallographic plane for example, the (100) plane is generally not parallel to the end face 2 of the single crystal 3.
  • the Bragg reflection is measured with the X-ray goniometer 15, 16, which for this purpose in a defined angular range is moved.
  • the x-ray tube 15 and the detector 16 are for this purpose in a known manner at a fixed angular distance from each other and are moved on a circular arc in the predetermined angular range.
  • the Bragg reflex indicates the angle that the crystallographic plane with the surface 11a of the holder 11 includes.
  • the X-ray goniometric measurement is repeated with the monocrystal rotated 90 °.
  • the position of the end face 2 on the crystal is measured on the wire saw 20 with the aid of the identical autocollimation telescope 25 and the identical plane-parallel mirror 27.
  • the zero point adjustment of the XY positioning unit 24 in the machine-side coordinate system X M , Y M takes place here by means of the reference surface 32.
  • the adjustment is made only once at the factory, for example with a dial gauge.
  • the zero point determination in the X M direction, ie in the wire plane takes place with each roll change of the cutting wire.
  • the reference surface 32 on the wire field is aligned horizontally with a camera attached to the reference surface, the X position relative to a reference wire of the wire field determined.
  • the feed unit 23 is moved to the reference position, ie the reference surface 32 is located in the optical axis of the autocollimation telescope 25, and the mirror 27 placed on the reference surface and the position of the autocollimation telescope measured. Then, an electronic referencing takes place based on the reference surface 32, wherein the mirror 27 is sucked by means of the vacuum fastening device to the reference surface 32. Then, the mirror 27 is removed and the feed unit moved to the loading or orientation position and the single crystal 3 is attached to the saw pad 12. Then, the mirror 27 is fixed to the crystal face 2 and the angular adjustment of the face 2 with the autocollimation telescope 25 is measured. Then, the correction values obtained from the measurement in the device 10 are input, and the horizontal and vertical position adjustment of the single crystal is made so that the crystallographic plane has the predetermined angle to the wire field. The mirror is removed and the separation performed.
  • the azimuthal angle adjustment of the particular crystallographic direction K is maintained, and high feed rates can be used in comparison with the prior art.
  • the feed rates are about fourfold for separating a 6-inch GaAs single crystal compared to the conventional orientation in which it is not possible to properly set the azimuthal angular position.
  • the desired misalignment is taken into account by providing the wedge plate.
  • the single crystal in the separation device is about its axis No shown in FIG. 1, which is perpendicular to the wafer surface rotatable to set the optimum angle to minimize the cutting forces.
  • a measuring device for measuring the deflection of the separating device is then provided during the cut.
  • a non-contact distance measuring system for detecting the orientation of the flat can be used.
  • the described apparatus and method allow for a high accuracy direct measurement on the wire saw without security risk. Furthermore, the angle measurement with the Autokollimations mentor is independent of the measuring distance, so that the attachment of the Autokollimationsfernrohres 25 outside the separation space is possible. To disconnect then the corresponding protective cover can be closed.
  • the X-Y positioning unit allows the vertical and horizontal adjustment of the components of the misorientation, so that the machining direction of the crystal can be freely selected at any time and used as a control variable for the wire deflection.
  • the application of the invention is not limited to a wire saw apparatus, but may for example be used for an inner hole separating device.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
EP05010482A 2001-06-13 2002-06-11 Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche Expired - Lifetime EP1568457B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10128630A DE10128630A1 (de) 2001-06-13 2001-06-13 Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche sowie Vorrichtung und Verfahren zum Trennen eines Einkristalls in einer Trennmaschine
DE10128630 2001-06-13
EP02778889A EP1399306B1 (de) 2001-06-13 2002-06-11 Verfahren und vorrichtung zum trennen eines einkristalls

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EP1568457A1 EP1568457A1 (de) 2005-08-31
EP1568457B1 true EP1568457B1 (de) 2007-08-22

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EP02778889A Expired - Lifetime EP1399306B1 (de) 2001-06-13 2002-06-11 Verfahren und vorrichtung zum trennen eines einkristalls

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US (1) US6923171B2 (enExample)
EP (2) EP1568457B1 (enExample)
JP (2) JP4716652B2 (enExample)
CN (2) CN100546793C (enExample)
AT (1) ATE369956T1 (enExample)
CZ (1) CZ304828B6 (enExample)
DE (3) DE10128630A1 (enExample)
RU (1) RU2296671C2 (enExample)
SK (1) SK286829B6 (enExample)
TW (1) TWI224670B (enExample)
WO (1) WO2002100619A1 (enExample)

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SK14932003A3 (sk) 2004-06-08
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JP4716652B2 (ja) 2011-07-06
EP1568457A1 (de) 2005-08-31
DE50210785D1 (de) 2007-10-04
EP1399306A1 (de) 2004-03-24
RU2004100543A (ru) 2005-06-10
TWI224670B (en) 2004-12-01
CN100569475C (zh) 2009-12-16
RU2296671C2 (ru) 2007-04-10
CN100546793C (zh) 2009-10-07
CN1736681A (zh) 2006-02-22
EP1399306B1 (de) 2007-08-15
US6923171B2 (en) 2005-08-02
SK286829B6 (sk) 2009-06-05
DE50210714D1 (de) 2007-09-27
JP2011003929A (ja) 2011-01-06
US20040168682A1 (en) 2004-09-02
CZ304828B6 (cs) 2014-11-26
JP2004533347A (ja) 2004-11-04
WO2002100619A1 (de) 2002-12-19
CN1529647A (zh) 2004-09-15
JP5357122B2 (ja) 2013-12-04
CZ20033395A3 (cs) 2004-05-12

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