CS222676B2 - High-capacity mosfet device - Google Patents
High-capacity mosfet device Download PDFInfo
- Publication number
- CS222676B2 CS222676B2 CS796589A CS658979A CS222676B2 CS 222676 B2 CS222676 B2 CS 222676B2 CS 796589 A CS796589 A CS 796589A CS 658979 A CS658979 A CS 658979A CS 222676 B2 CS222676 B2 CS 222676B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- region
- type
- gate
- electrode
- electrodes
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 241000255789 Bombyx mori Species 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 37
- 238000009792 diffusion process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229920006334 epoxy coating Polymers 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95131078A | 1978-10-13 | 1978-10-13 | |
| US3866279A | 1979-05-14 | 1979-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS222676B2 true CS222676B2 (en) | 1983-07-29 |
Family
ID=26715426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS796589A CS222676B2 (en) | 1978-10-13 | 1979-09-28 | High-capacity mosfet device |
Country Status (19)
| Country | Link |
|---|---|
| JP (2) | JP2622378B2 (it) |
| AR (1) | AR219006A1 (it) |
| BR (1) | BR7906338A (it) |
| CA (2) | CA1123119A (it) |
| CH (2) | CH660649A5 (it) |
| CS (1) | CS222676B2 (it) |
| DE (2) | DE2954481C2 (it) |
| DK (3) | DK157272C (it) |
| ES (1) | ES484652A1 (it) |
| FR (1) | FR2438917A1 (it) |
| GB (1) | GB2033658B (it) |
| HU (1) | HU182506B (it) |
| IL (1) | IL58128A (it) |
| IT (1) | IT1193238B (it) |
| MX (1) | MX147137A (it) |
| NL (1) | NL175358C (it) |
| PL (1) | PL123961B1 (it) |
| SE (2) | SE443682B (it) |
| SU (1) | SU1621817A3 (it) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| DE3040775C2 (de) * | 1980-10-29 | 1987-01-15 | Siemens AG, 1000 Berlin und 8000 München | Steuerbares MIS-Halbleiterbauelement |
| US4412242A (en) | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| GB2111745B (en) * | 1981-12-07 | 1985-06-19 | Philips Electronic Associated | Insulated-gate field-effect transistors |
| CA1188821A (en) * | 1982-09-03 | 1985-06-11 | Patrick W. Clarke | Power mosfet integrated circuit |
| US4532534A (en) * | 1982-09-07 | 1985-07-30 | Rca Corporation | MOSFET with perimeter channel |
| DE3346286A1 (de) * | 1982-12-21 | 1984-06-28 | International Rectifier Corp., Los Angeles, Calif. | Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil |
| JPS59167066A (ja) * | 1983-03-14 | 1984-09-20 | Nissan Motor Co Ltd | 縦形ｍｏｓｆｅｔ |
| JPS6010677A (ja) * | 1983-06-30 | 1985-01-19 | Nissan Motor Co Ltd | 縦型ｍｏｓトランジスタ |
| JPH0247874A (ja) * | 1988-08-10 | 1990-02-16 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| US5766966A (en) * | 1996-02-09 | 1998-06-16 | International Rectifier Corporation | Power transistor device having ultra deep increased concentration region |
| IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
| US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
| US5304831A (en) * | 1990-12-21 | 1994-04-19 | Siliconix Incorporated | Low on-resistance power MOS technology |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| EP0586716B1 (de) * | 1992-08-10 | 1997-10-22 | Siemens Aktiengesellschaft | Leistungs-MOSFET mit verbesserter Avalanche-Festigkeit |
| JPH06268227A (ja) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | 絶縁ゲート型バイポーラトランジスタ |
| EP0660402B1 (en) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Power semiconductor device |
| DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| EP0665597A1 (en) * | 1994-01-27 | 1995-08-02 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | IGBT and manufacturing process therefore |
| US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
| EP0689238B1 (en) * | 1994-06-23 | 2002-02-20 | STMicroelectronics S.r.l. | MOS-technology power device manufacturing process |
| DE69418037T2 (de) * | 1994-08-02 | 1999-08-26 | Consorzio Per La Ricerca Sulla Microelettronica Ne | Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau |
| US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
| DE69534919T2 (de) * | 1995-10-30 | 2007-01-25 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe |
| DE69533134T2 (de) * | 1995-10-30 | 2005-07-07 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsbauteil hoher Dichte in MOS-Technologie |
| US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
| DE69518653T2 (de) * | 1995-12-28 | 2001-04-19 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Technologie-Leistungsanordnung in integrierter Struktur |
| EP0961325B1 (en) | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | High integration density MOS technology power device |
| WO2000062345A1 (fr) | 1999-04-09 | 2000-10-19 | Shindengen Electric Manufacturing Co., Ltd. | Dispositif a semi-conducteur haute tension |
| JP4122113B2 (ja) * | 1999-06-24 | 2008-07-23 | 新電元工業株式会社 | 高破壊耐量電界効果型トランジスタ |
| US6344379B1 (en) | 1999-10-22 | 2002-02-05 | Semiconductor Components Industries Llc | Semiconductor device with an undulating base region and method therefor |
| JP4845293B2 (ja) * | 2000-08-30 | 2011-12-28 | 新電元工業株式会社 | 電界効果トランジスタ |
| JP2006295134A (ja) | 2005-03-17 | 2006-10-26 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9530844B2 (en) | 2012-12-28 | 2016-12-27 | Cree, Inc. | Transistor structures having reduced electrical field at the gate oxide and methods for making same |
| US10115815B2 (en) | 2012-12-28 | 2018-10-30 | Cree, Inc. | Transistor structures having a deep recessed P+ junction and methods for making same |
| JP5907097B2 (ja) * | 2013-03-18 | 2016-04-20 | 三菱電機株式会社 | 半導体装置 |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| CN106575666B (zh) | 2014-08-19 | 2021-08-06 | 维西埃-硅化物公司 | 超结金属氧化物半导体场效应晶体管 |
| US11489069B2 (en) | 2017-12-21 | 2022-11-01 | Wolfspeed, Inc. | Vertical semiconductor device with improved ruggedness |
| US10615274B2 (en) | 2017-12-21 | 2020-04-07 | Cree, Inc. | Vertical semiconductor device with improved ruggedness |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
| JPS52106688A (en) * | 1976-03-05 | 1977-09-07 | Nec Corp | Field-effect transistor |
| JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
| US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
| JPS5374385A (en) * | 1976-12-15 | 1978-07-01 | Hitachi Ltd | Manufacture of field effect semiconductor device |
| US4148047A (en) * | 1978-01-16 | 1979-04-03 | Honeywell Inc. | Semiconductor apparatus |
| JPH05185381A (ja) * | 1992-01-10 | 1993-07-27 | Yuum Kogyo:Kk | 替刃式鋸用ハンドル |
-
1979
- 1979-08-22 DK DK350679A patent/DK157272C/da not_active IP Right Cessation
- 1979-08-28 IL IL58128A patent/IL58128A/xx unknown
- 1979-09-25 AR AR278193A patent/AR219006A1/es active
- 1979-09-28 MX MX179453A patent/MX147137A/es unknown
- 1979-09-28 CS CS796589A patent/CS222676B2/cs unknown
- 1979-10-02 ES ES484652A patent/ES484652A1/es not_active Expired
- 1979-10-02 BR BR7906338A patent/BR7906338A/pt not_active IP Right Cessation
- 1979-10-08 DE DE19792954481 patent/DE2954481C2/de not_active Expired - Lifetime
- 1979-10-08 DE DE2940699A patent/DE2940699C2/de not_active Expired
- 1979-10-09 CA CA337,182A patent/CA1123119A/en not_active Expired
- 1979-10-09 GB GB7935059A patent/GB2033658B/en not_active Expired
- 1979-10-09 NL NLAANVRAGE7907472,A patent/NL175358C/xx not_active IP Right Cessation
- 1979-10-09 FR FR7925070A patent/FR2438917A1/fr active Granted
- 1979-10-11 HU HU79IE891A patent/HU182506B/hu not_active IP Right Cessation
- 1979-10-11 PL PL1979218878A patent/PL123961B1/pl unknown
- 1979-10-11 IT IT26435/79A patent/IT1193238B/it active
- 1979-10-11 SU SU792835965A patent/SU1621817A3/ru active
- 1979-10-12 CH CH7696/81A patent/CH660649A5/de not_active IP Right Cessation
- 1979-10-12 SE SE7908479A patent/SE443682B/sv not_active IP Right Cessation
- 1979-10-12 CH CH923279A patent/CH642485A5/de not_active IP Right Cessation
-
1981
- 1981-11-12 CA CA000389973A patent/CA1136291A/en not_active Expired
-
1985
- 1985-07-26 SE SE8503615A patent/SE465444B/sv not_active IP Right Cessation
-
1987
- 1987-04-28 JP JP62106158A patent/JP2622378B2/ja not_active Expired - Lifetime
-
1988
- 1988-09-15 DK DK512488A patent/DK512488A/da not_active Application Discontinuation
- 1988-09-15 DK DK512388A patent/DK512388A/da not_active Application Discontinuation
-
1994
- 1994-10-12 JP JP6246144A patent/JP2643095B2/ja not_active Expired - Lifetime
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CS222676B2 (en) | High-capacity mosfet device | |
| US4705759A (en) | High power MOSFET with low on-resistance and high breakdown voltage | |
| US5191396A (en) | High power mosfet with low on-resistance and high breakdown voltage | |
| US5338961A (en) | High power MOSFET with low on-resistance and high breakdown voltage | |
| US4115797A (en) | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector | |
| GB2082385A (en) | Process for manufacture of high power mosfet with laterally distributed high carrier density beneath the gate oxide | |
| EP0091686B1 (en) | Semiconductor device having a diffused region of reduced length and method of fabricating the same | |
| US5468668A (en) | Method of forming MOS-gated semiconductor devices having mesh geometry pattern | |
| KR20010106231A (ko) | 반도체장치 | |
| US5874338A (en) | MOS-technology power device and process of making same | |
| JPH06502277A (ja) | 半導体エレメントの、例えばダイオードの製造法 | |
| US6160306A (en) | Diode of semiconductor device and method for manufacturing the same | |
| EP0729188A2 (en) | Semiconductor device having junction field effect transistors | |
| KR900007048B1 (ko) | 종형 mos 반도체장치 | |
| JP3206726B2 (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPS62155567A (ja) | 絶縁ゲ−ト型半導体装置の製造方法 | |
| CN108054215B (zh) | 结型场效应晶体管及其制作方法 | |
| JPS61500520A (ja) | 高抵抗及び低抵抗領域を有するＩｎＰを含む半導体デバイスの製作 | |
| US5970343A (en) | Fabrication of conductivity enhanced MOS-gated semiconductor devices | |
| JP2808882B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| JP2000138233A (ja) | 接合型電界効果トランジスタ及びその製造方法 | |
| JPS60236265A (ja) | 導電変調型ｍｏｓｆｅｔ | |
| KR0148699B1 (ko) | 반도체소자 | |
| JPS60175457A (ja) | 電界効果トランジスタの製造方法 | |
| KR830001247B1 (ko) | 복수다각형 소스패턴을 가진 mosfet 장치 |