CN108054215B - 结型场效应晶体管及其制作方法 - Google Patents
结型场效应晶体管及其制作方法 Download PDFInfo
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- CN108054215B CN108054215B CN201711397389.8A CN201711397389A CN108054215B CN 108054215 B CN108054215 B CN 108054215B CN 201711397389 A CN201711397389 A CN 201711397389A CN 108054215 B CN108054215 B CN 108054215B
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- type epitaxial
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- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005669 field effect Effects 0.000 claims abstract description 22
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000001259 photo etching Methods 0.000 claims description 25
- 239000007943 implant Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 9
- 230000003321 amplification Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711397389.8A CN108054215B (zh) | 2017-12-21 | 2017-12-21 | 结型场效应晶体管及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711397389.8A CN108054215B (zh) | 2017-12-21 | 2017-12-21 | 结型场效应晶体管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108054215A CN108054215A (zh) | 2018-05-18 |
CN108054215B true CN108054215B (zh) | 2020-08-28 |
Family
ID=62130506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201711397389.8A Expired - Fee Related CN108054215B (zh) | 2017-12-21 | 2017-12-21 | 结型场效应晶体管及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108054215B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110690273B (zh) * | 2019-10-16 | 2021-03-02 | 南京大学 | 横向GaN基增强型结型场效应管器件及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS568873A (en) * | 1979-07-04 | 1981-01-29 | Pioneer Electronic Corp | Bipolar transistor |
JPS63151084A (ja) * | 1986-12-16 | 1988-06-23 | Tokin Corp | 電界効果型半導体装置 |
CN1112731A (zh) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | 外延向上生长方法和器件 |
CN101996945A (zh) * | 2009-08-17 | 2011-03-30 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN203983264U (zh) * | 2013-10-30 | 2014-12-03 | 英飞凌科技奥地利有限公司 | 半导体器件 |
CN105405889A (zh) * | 2015-11-04 | 2016-03-16 | 中国科学院微电子研究所 | 一种具有全方位电流扩展路径的沟槽mosfet |
CN106298966A (zh) * | 2015-05-25 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制备方法和电子装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9853103B2 (en) * | 2016-04-07 | 2017-12-26 | Cirrus Logic, Inc. | Pinched doped well for a junction field effect transistor (JFET) isolated from the substrate |
-
2017
- 2017-12-21 CN CN201711397389.8A patent/CN108054215B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS568873A (en) * | 1979-07-04 | 1981-01-29 | Pioneer Electronic Corp | Bipolar transistor |
JPS63151084A (ja) * | 1986-12-16 | 1988-06-23 | Tokin Corp | 電界効果型半導体装置 |
CN1112731A (zh) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | 外延向上生长方法和器件 |
CN101996945A (zh) * | 2009-08-17 | 2011-03-30 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN203983264U (zh) * | 2013-10-30 | 2014-12-03 | 英飞凌科技奥地利有限公司 | 半导体器件 |
CN106298966A (zh) * | 2015-05-25 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制备方法和电子装置 |
CN105405889A (zh) * | 2015-11-04 | 2016-03-16 | 中国科学院微电子研究所 | 一种具有全方位电流扩展路径的沟槽mosfet |
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CN108054215A (zh) | 2018-05-18 |
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Effective date of registration: 20200806 Address after: 210000 Kechuang building, Futian Road, Zhetang street, Lishui Economic Development Zone, Nanjing City, Jiangsu Province Applicant after: Nanjing Lishui hi tech Venture Capital Management Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210119 Address after: 211299 science and technology innovation center, No.5 Shiqiu Avenue, Shiqiu street, Lishui District, Nanjing City, Jiangsu Province Patentee after: Jiangsu Qinglian Optoelectronic Technology Research Institute Co., Ltd Address before: 210000 Kechuang building, Futian Road, Zhetang street, Lishui Economic Development Zone, Nanjing, Jiangsu Province Patentee before: Nanjing Lishui hi tech Venture Capital Management Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200828 Termination date: 20201221 |