CN1938647A - 用于蚀刻后去除基片上沉积的光致抗蚀剂和/或牺牲性抗反射物质的组合物和方法 - Google Patents
用于蚀刻后去除基片上沉积的光致抗蚀剂和/或牺牲性抗反射物质的组合物和方法 Download PDFInfo
- Publication number
- CN1938647A CN1938647A CNA2005800105407A CN200580010540A CN1938647A CN 1938647 A CN1938647 A CN 1938647A CN A2005800105407 A CNA2005800105407 A CN A2005800105407A CN 200580010540 A CN200580010540 A CN 200580010540A CN 1938647 A CN1938647 A CN 1938647A
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- Prior art keywords
- aqueous solution
- prescription
- water
- weight
- mercaptobenzimidazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 title claims abstract description 70
- 239000000463 material Substances 0.000 title claims abstract description 63
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 230000008569 process Effects 0.000 title claims abstract description 9
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- 239000002585 base Substances 0.000 claims abstract description 35
- 239000004094 surface-active agent Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000006184 cosolvent Substances 0.000 claims abstract description 21
- 239000003513 alkali Substances 0.000 claims abstract description 14
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 11
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 7
- 239000007800 oxidant agent Substances 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 295
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 279
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 151
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 106
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 102
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 82
- -1 polyoxyethylene Polymers 0.000 claims description 73
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 32
- 239000003352 sequestering agent Substances 0.000 claims description 30
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- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims description 16
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 15
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- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 9
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 9
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 9
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- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 7
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- FIDRAVVQGKNYQK-UHFFFAOYSA-N 1,2,3,4-tetrahydrotriazine Chemical compound C1NNNC=C1 FIDRAVVQGKNYQK-UHFFFAOYSA-N 0.000 claims description 6
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 6
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- 241001597008 Nomeidae Species 0.000 claims description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 6
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- 235000010323 ascorbic acid Nutrition 0.000 claims description 6
- 239000011668 ascorbic acid Substances 0.000 claims description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 6
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- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
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- QQVIHTHCMHWDBS-UHFFFAOYSA-N perisophthalic acid Natural products OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
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- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052731 fluorine Inorganic materials 0.000 claims description 5
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- ZKKLPDLKUGTPME-UHFFFAOYSA-N diazanium;bis(sulfanylidene)molybdenum;sulfanide Chemical compound [NH4+].[NH4+].[SH-].[SH-].S=[Mo]=S ZKKLPDLKUGTPME-UHFFFAOYSA-N 0.000 claims description 3
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- 238000001459 lithography Methods 0.000 claims 1
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- 229910017052 cobalt Inorganic materials 0.000 description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000399 optical microscopy Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 208000034189 Sclerosis Diseases 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical class CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229960005150 glycerol Drugs 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K31/00—Medicinal preparations containing organic active ingredients
- A61K31/33—Heterocyclic compounds
- A61K31/395—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins
- A61K31/435—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with one nitrogen as the only ring hetero atom
- A61K31/44—Non condensed pyridines; Hydrogenated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Pharmacology & Pharmacy (AREA)
- Epidemiology (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Detergent Compositions (AREA)
Abstract
Description
配方 | 光致抗蚀剂去除,% | SARC去除,% | 铜腐蚀速率(_/min) |
A | 100 | 100 | 0.77 |
B | 100 | 100 | 1.3 |
C | 100 | 100 | 2.5 |
D | 99 | 100 | --- |
E | 99 | 100 | 0.42 |
F | 85 | 100 | 1.3 |
G | 100 | 100 | 0.70 |
配方 | 温度,℃ | 接触时间,min | 钴相容性 | 铜相容性 | 光致抗蚀剂的清除% |
H | 70 | 30 | 表面稍有粗糙 | 腐蚀速率0.62_/min | 100 |
I | 70 | 20 | 表面稍有粗糙 | 不相容 | 100 |
J | 70 | 30 | 良好 | 良好 | 100 |
K | 70 | 30 | 表面有一些沉积,无厚度变化 | 良好 | 100 |
L | 70 | 30 | 良好 | 良好 | 100 |
M | 70 | 30 | 良好 | 良好 | 100 |
N | 70 | 30 | 良好 | 良好 | 100 |
O | 70 | 30 | 良好 | 良好 | 100 |
P | 70 | 30 | 良好 | 良好 | 100 |
Q | 60 | 30 | 良好 | 良好 | 100 |
R | 60 | 30 | 良好 | 良好 | 100 |
S | 60 | 30 | 良好 | 良好 | 100 |
配方 | 光致抗蚀剂从基片去除的百分比 |
T | 100 |
U | 100 |
V | 100 |
W | 100 |
X | 100 |
Y | 95 |
Z | 95 |
A2 | 100 |
配方 | 温度,℃ | 接触时间,min | 钴相容性 | 光致抗蚀剂的清除% |
B2 | 60 | 60 | 良好 | 100 |
C2 | 60 | 60 | 良好 | 100 |
D2 | 60 | 60 | 良好 | 100 |
E2 | 60 | 60 | 良好 | 100 |
F2 | 60 | 60 | 良好 | 100 |
G2 | 60 | 60 | 良好 | 100 |
H2 | 60 | 60 | 良好 | 100 |
I2 | 60 | 60 | 良好 | 100 |
J2 | 60 | 60 | 较好 | 100 |
K2 | 60 | 60 | 较好 | 100 |
L2 | 60 | 60 | 较好 | 100 |
配方 | 温度,℃ | 接触时间,min | 钴相容性 | 钴腐蚀速率,_/min | 铜腐蚀速率,_/min | 光致抗蚀剂的清除% |
M2 | 70 | 30 | 良好 | 0.048 | 0.84 | 100 |
N2 | 70 | 30 | 良好 | 0.16 | 0.52 | 100 |
O2 | 70 | 30 | 良好 | 0.21 | 0.72 | 100 |
P2 | 70 | 30 | 良好 | -- | 不相容 | 100 |
Q2 | 70 | 30 | 良好 | -- | 2.55 | 100 |
R2 | 70 | 30 | 良好 | -- | 不相容 | 100 |
Claims (52)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/792,038 US8338087B2 (en) | 2004-03-03 | 2004-03-03 | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US10/792,038 | 2004-03-03 | ||
PCT/US2005/006713 WO2005085957A1 (en) | 2004-03-03 | 2005-03-02 | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1938647A true CN1938647A (zh) | 2007-03-28 |
CN1938647B CN1938647B (zh) | 2012-08-29 |
Family
ID=34911755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800105407A Active CN1938647B (zh) | 2004-03-03 | 2005-03-02 | 用于蚀刻后去除基片上沉积的光致抗蚀剂和/或牺牲性抗反射物质的组合物和方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8338087B2 (zh) |
EP (1) | EP1730600B1 (zh) |
JP (1) | JP4758982B2 (zh) |
KR (1) | KR101256230B1 (zh) |
CN (1) | CN1938647B (zh) |
CA (1) | CA2599727A1 (zh) |
TW (1) | TWI408728B (zh) |
WO (1) | WO2005085957A1 (zh) |
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EP1918322A1 (en) * | 2006-11-03 | 2008-05-07 | Henkel Kommanditgesellschaft auf Aktien | Paint Stripper with Corrosion Inhibitor for Aluminium |
US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
JP4499751B2 (ja) * | 2006-11-21 | 2010-07-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | フォトレジスト、エッチ残留物及びbarcを除去するための配合物及び同配合物を含む方法 |
CN101201556A (zh) * | 2006-12-15 | 2008-06-18 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂 |
SG177915A1 (en) * | 2006-12-21 | 2012-02-28 | Advanced Tech Materials | Liquid cleaner for the removal of post-etch residues |
TWI516573B (zh) * | 2007-02-06 | 2016-01-11 | 安堤格里斯公司 | 選擇性移除TiSiN之組成物及方法 |
JP4692497B2 (ja) * | 2007-02-28 | 2011-06-01 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
CN101286017A (zh) * | 2007-04-13 | 2008-10-15 | 安集微电子(上海)有限公司 | 厚膜光刻胶清洗剂 |
CN101286016A (zh) * | 2007-04-13 | 2008-10-15 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂 |
KR20100051839A (ko) * | 2007-08-02 | 2010-05-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물 |
JP2009075285A (ja) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
KR101569338B1 (ko) * | 2007-11-13 | 2015-11-17 | 사켐,인코포레이티드 | 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법 |
US20090241988A1 (en) * | 2008-03-31 | 2009-10-01 | Intel Corporation | Photoresist and antireflective layer removal solution and method thereof |
WO2010048139A2 (en) * | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
JP5502438B2 (ja) * | 2009-03-24 | 2014-05-28 | 東京応化工業株式会社 | 多層レジスト積層体用剥離液及び多層レジスト積層体の処理方法 |
US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
US8309502B2 (en) | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US9481937B2 (en) * | 2009-04-30 | 2016-11-01 | Asm America, Inc. | Selective etching of reactor surfaces |
US8518865B2 (en) | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
JP5498768B2 (ja) * | 2009-12-02 | 2014-05-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
JP2013533631A (ja) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残渣を除去するための水性洗浄剤 |
JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
BR112013003854A2 (pt) | 2010-08-20 | 2016-06-07 | Advanced Tech Materials | processo sustentável para reivindicação de metais preciosos e metais de base oriundo de resíduo e |
WO2012048079A2 (en) | 2010-10-06 | 2012-04-12 | Advanced Technology Materials, Inc. | Composition and process for selectively etching metal nitrides |
TWI502065B (zh) | 2010-10-13 | 2015-10-01 | Entegris Inc | 抑制氮化鈦腐蝕之組成物及方法 |
JP5886946B2 (ja) * | 2011-06-01 | 2016-03-16 | アバンター・パフォーマンス・マテリアルズ・インコーポレイテッドAvantor Performance Materials, Inc. | 銅、タングステンおよび多孔質低κ誘電体に対する増強された相溶性を有する半水溶性ポリマー除去組成物 |
CN102200700B (zh) * | 2011-06-08 | 2012-08-22 | 绵阳艾萨斯电子材料有限公司 | 剥离液及其制备方法与应用 |
CN102981376A (zh) * | 2011-09-05 | 2013-03-20 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
TW201311883A (zh) * | 2011-09-13 | 2013-03-16 | Anji Microelectronics Co Ltd | 光阻(光刻)膠的清洗液 |
TW201311884A (zh) * | 2011-09-13 | 2013-03-16 | Anji Microelectronics Co Ltd | 光阻(光刻)膠的清洗液 |
JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 銅または銅合金用エッチング液 |
SG11201403556WA (en) | 2011-12-28 | 2014-07-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
CN104508072A (zh) | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
KR101997950B1 (ko) | 2012-02-17 | 2019-07-08 | 미쯔비시 케미컬 주식회사 | 반도체 디바이스용 세정액 및 반도체 디바이스용 기판의 세정 방법 |
US8916429B2 (en) | 2012-04-30 | 2014-12-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Aqueous cleaning techniques and compositions for use in semiconductor device manufacturing |
JP2015517691A (ja) | 2012-05-18 | 2015-06-22 | インテグリス,インコーポレイテッド | 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス |
US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
KR102118964B1 (ko) | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
JP6363116B2 (ja) | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
TW201500542A (zh) * | 2013-04-22 | 2015-01-01 | Advanced Tech Materials | 銅清洗及保護配方 |
SG11201509933QA (en) | 2013-06-06 | 2016-01-28 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
KR101420571B1 (ko) * | 2013-07-05 | 2014-07-16 | 주식회사 동진쎄미켐 | 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 |
US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
KR102008881B1 (ko) * | 2013-08-06 | 2019-08-08 | 동우 화인켐 주식회사 | 반도체 웨이퍼 세정용 조성물 |
EP3039098B1 (en) | 2013-08-30 | 2020-09-30 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US9291910B2 (en) * | 2013-09-27 | 2016-03-22 | Dynaloy, Llc | Aqueous solution and process for removing substances from substrates |
WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
TWI659098B (zh) | 2014-01-29 | 2019-05-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
TWI635160B (zh) * | 2014-03-07 | 2018-09-11 | 東友精細化工有限公司 | 紋理蝕刻溶液組成物及晶體矽晶圓紋理蝕刻方法 |
TWI522421B (zh) * | 2014-03-18 | 2016-02-21 | Daxin Materials Corp | Liquid crystal alignment composition |
KR101956352B1 (ko) * | 2014-03-20 | 2019-03-08 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
KR102310637B1 (ko) | 2015-01-12 | 2021-10-08 | 삼성전자주식회사 | 씬너 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
EP3268810B1 (en) * | 2015-03-12 | 2022-07-06 | Merck Patent GmbH | Compositions and methods that promote charge complexing copper protection during low pka driven polymer stripping |
KR102152665B1 (ko) * | 2016-03-31 | 2020-09-07 | 후지필름 가부시키가이샤 | 반도체 제조용 처리액, 및 패턴 형성 방법 |
US10073352B2 (en) | 2016-04-12 | 2018-09-11 | Versum Materials Us, Llc | Aqueous solution and process for removing substances from substrates |
CN109195720B (zh) | 2016-05-23 | 2021-10-29 | 富士胶片电子材料美国有限公司 | 用于从半导体基板去除光刻胶的剥离组合物 |
KR102434147B1 (ko) | 2016-10-06 | 2022-08-19 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판상의 잔류물을 제거하기 위한 세정 제형 |
EP3601514A4 (en) | 2017-03-24 | 2020-04-08 | Fujifilm Electronic Materials USA, Inc. | CLEANING COMPOSITIONS FOR REMOVING RESIDUES ON SEMICONDUCTOR SUBSTRATES |
WO2019000446A1 (zh) * | 2017-06-30 | 2019-01-03 | 深圳市恒兆智科技有限公司 | 清洗除氧化皮剂及压铸铝工件除氧化皮处理方法 |
TWI751406B (zh) | 2018-03-06 | 2022-01-01 | 美商應用材料股份有限公司 | 形成金屬硫系化物柱體之方法 |
US11149235B2 (en) * | 2018-07-20 | 2021-10-19 | Entegris, Inc. | Cleaning composition with corrosion inhibitor |
WO2020210784A1 (en) | 2019-04-12 | 2020-10-15 | Ecolab Usa Inc. | Antimicrobial multi-purpose cleaner and methods of making and using the same |
JP2022530147A (ja) | 2019-04-24 | 2022-06-27 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 半導体基板からフォトレジストを除去するための剥離組成物 |
WO2021005140A1 (en) | 2019-07-11 | 2021-01-14 | Merck Patent Gmbh | Photoresist remover compositions |
CN113433807A (zh) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | 离子注入光刻胶清洗液、其制备方法及应用 |
CN117015845A (zh) * | 2021-03-08 | 2023-11-07 | 三菱瓦斯化学株式会社 | 半导体基板清洗用组合物及清洗方法 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3980587A (en) | 1974-08-16 | 1976-09-14 | G. T. Schjeldahl Company | Stripper composition |
DE3530282A1 (de) | 1985-08-24 | 1987-03-05 | Hoechst Ag | Verfahren zum entschichten von lichtgehaerteten photoresistschichten |
US4964919A (en) | 1988-12-27 | 1990-10-23 | Nalco Chemical Company | Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound |
JPH0344600A (ja) | 1989-07-12 | 1991-02-26 | Toshiba Corp | 使用済樹脂の移送装置 |
US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
US6187730B1 (en) | 1990-11-05 | 2001-02-13 | Ekc Technology, Inc. | Hydroxylamine-gallic compound composition and process |
US6110881A (en) | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US6492311B2 (en) | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
US5139607A (en) * | 1991-04-23 | 1992-08-18 | Act, Inc. | Alkaline stripping compositions |
US5147499A (en) * | 1991-07-24 | 1992-09-15 | Applied Materials, Inc. | Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure |
US5236552A (en) * | 1992-04-13 | 1993-08-17 | At&T Bell Laboratories | Photoresist stripping method |
IT1265041B1 (it) * | 1993-07-23 | 1996-10-28 | Eniricerche Spa | Catalizzatore bifunzionale efficace nella idroisomerizzazione di cere e procedimento per la sua preparazione |
US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
US5520835A (en) * | 1994-08-31 | 1996-05-28 | The Procter & Gamble Company | Automatic dishwashing compositions comprising multiquaternary bleach activators |
EP0789071B1 (en) | 1995-07-27 | 2006-10-11 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition therefor |
JP3198878B2 (ja) * | 1995-07-27 | 2001-08-13 | 三菱化学株式会社 | 表面処理組成物及びそれを用いた基体の表面処理方法 |
TW401604B (en) * | 1995-09-11 | 2000-08-11 | Mitsubishi Chemcal Coproration | Surface treatment composition |
JP2950407B2 (ja) * | 1996-01-29 | 1999-09-20 | 東京応化工業株式会社 | 電子部品製造用基材の製造方法 |
US5709756A (en) | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
US6268323B1 (en) | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6117795A (en) * | 1998-02-12 | 2000-09-12 | Lsi Logic Corporation | Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit |
EP1057080A1 (en) * | 1998-02-26 | 2000-12-06 | Alpha Metals, Inc. | Resist stripping process |
US6440647B1 (en) | 1998-02-26 | 2002-08-27 | Alpha Metals, Inc. | Resist stripping process |
US5977601A (en) | 1998-07-17 | 1999-11-02 | Advanced Micro Devices, Inc. | Method for etching memory gate stack using thin resist layer |
MY128333A (en) * | 1998-09-14 | 2007-01-31 | Ibiden Co Ltd | Printed wiring board and its manufacturing method |
KR100286860B1 (ko) * | 1998-12-31 | 2001-07-12 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
US6200947B1 (en) | 1999-01-20 | 2001-03-13 | Sumitomo Chemical Company, Limited | Metal-corrosion inhibitor and cleaning liquid |
US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
US6038800A (en) * | 1999-07-23 | 2000-03-21 | Seidel; Gregg A. | Advertising display device |
JP2001183850A (ja) * | 1999-12-27 | 2001-07-06 | Sumitomo Chem Co Ltd | 剥離剤組成物 |
JP3514435B2 (ja) * | 1999-12-28 | 2004-03-31 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
TWI243204B (en) | 2000-02-04 | 2005-11-11 | Sumitomo Chemical Co | Electronic parts cleaning solution |
US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
JP2001244228A (ja) * | 2000-02-29 | 2001-09-07 | Mitsubishi Materials Silicon Corp | 半導体基板の洗浄液及び洗浄方法 |
US6274296B1 (en) * | 2000-06-08 | 2001-08-14 | Shipley Company, L.L.C. | Stripper pretreatment |
WO2002001300A1 (fr) * | 2000-06-28 | 2002-01-03 | Nec Corporation | Composition d'agent de demontage |
JP2002062668A (ja) | 2000-08-14 | 2002-02-28 | Mitsubishi Gas Chem Co Inc | フォトレジストの剥離方法 |
AU2001292244A1 (en) * | 2000-09-27 | 2002-04-08 | Hitachi Chemical Co. Ltd. | Resist pattern, process for producing the same, and utilization thereof |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
TW554258B (en) | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
JP2003005383A (ja) | 2000-11-30 | 2003-01-08 | Tosoh Corp | レジスト剥離剤 |
JP4945857B2 (ja) | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
US6572743B2 (en) * | 2001-08-23 | 2003-06-03 | 3M Innovative Properties Company | Electroplating assembly for metal plated optical fibers |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US6551973B1 (en) * | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
US6991739B2 (en) * | 2001-10-15 | 2006-01-31 | Applied Materials, Inc. | Method of photoresist removal in the presence of a dielectric layer having a low k-value |
JP4381143B2 (ja) * | 2001-11-15 | 2009-12-09 | ハネウェル・インターナショナル・インコーポレーテッド | フォトリソグラフィー用スピンオン反射防止膜 |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
TW574606B (en) * | 2002-04-10 | 2004-02-01 | Merck Kanto Advanced Chemical | Thinner composition for rinsing photoresist |
DE60328014D1 (de) * | 2002-04-25 | 2009-07-30 | Fujifilm Electronic Materials | Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen |
BR0311830A (pt) * | 2002-06-07 | 2005-03-29 | Mallinckrodt Baker Inc | Composições removedoras de arco e de limpeza de microeletrÈnicos |
US8236485B2 (en) * | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
US7101832B2 (en) * | 2003-06-19 | 2006-09-05 | Johnsondiversey, Inc. | Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method |
US7521406B2 (en) * | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
-
2004
- 2004-03-03 US US10/792,038 patent/US8338087B2/en active Active
-
2005
- 2005-03-01 TW TW094106019A patent/TWI408728B/zh active
- 2005-03-02 CN CN2005800105407A patent/CN1938647B/zh active Active
- 2005-03-02 JP JP2007501931A patent/JP4758982B2/ja active Active
- 2005-03-02 EP EP05724288.5A patent/EP1730600B1/en not_active Not-in-force
- 2005-03-02 KR KR1020067020256A patent/KR101256230B1/ko not_active IP Right Cessation
- 2005-03-02 CA CA002599727A patent/CA2599727A1/en not_active Abandoned
- 2005-03-02 WO PCT/US2005/006713 patent/WO2005085957A1/en active Application Filing
-
2012
- 2012-12-18 US US13/718,830 patent/US20130109605A1/en not_active Abandoned
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101481640B (zh) * | 2008-01-10 | 2011-05-18 | 长兴开发科技股份有限公司 | 水性清洗组合物 |
CN102007196A (zh) * | 2008-03-07 | 2011-04-06 | 高级技术材料公司 | 非选择性氧化物蚀刻湿清洁组合物及使用方法 |
CN102007196B (zh) * | 2008-03-07 | 2014-10-29 | 高级技术材料公司 | 非选择性氧化物蚀刻湿清洁组合物及使用方法 |
CN102770812B (zh) * | 2010-01-25 | 2015-07-01 | 东亚合成株式会社 | 含导电性高分子的基材上的光致抗蚀剂用显影液、以及图形形成方法 |
CN102770812A (zh) * | 2010-01-25 | 2012-11-07 | 东亚合成株式会社 | 含导电性高分子的基材上的光致抗蚀剂用显影液、以及图形形成方法 |
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Publication number | Publication date |
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TW200534364A (en) | 2005-10-16 |
WO2005085957A1 (en) | 2005-09-15 |
TWI408728B (zh) | 2013-09-11 |
JP2007526523A (ja) | 2007-09-13 |
US20050197265A1 (en) | 2005-09-08 |
US8338087B2 (en) | 2012-12-25 |
EP1730600A1 (en) | 2006-12-13 |
EP1730600B1 (en) | 2016-01-06 |
JP4758982B2 (ja) | 2011-08-31 |
KR101256230B1 (ko) | 2013-04-17 |
KR20070017509A (ko) | 2007-02-12 |
CN1938647B (zh) | 2012-08-29 |
CA2599727A1 (en) | 2005-09-15 |
US20130109605A1 (en) | 2013-05-02 |
EP1730600A4 (en) | 2010-07-28 |
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