JP5886946B2 - 銅、タングステンおよび多孔質低κ誘電体に対する増強された相溶性を有する半水溶性ポリマー除去組成物 - Google Patents
銅、タングステンおよび多孔質低κ誘電体に対する増強された相溶性を有する半水溶性ポリマー除去組成物 Download PDFInfo
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- JP5886946B2 JP5886946B2 JP2014513694A JP2014513694A JP5886946B2 JP 5886946 B2 JP5886946 B2 JP 5886946B2 JP 2014513694 A JP2014513694 A JP 2014513694A JP 2014513694 A JP2014513694 A JP 2014513694A JP 5886946 B2 JP5886946 B2 JP 5886946B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C—CHEMISTRY; METALLURGY
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
Claims (29)
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するための除去組成物であって、
(a)約5重量%〜約49重量%の水、
(b)約2重量%〜約20重量%のエチレングリコール、
(c)約30重量%〜約70重量%の1以上のグリコールエーテル溶媒、
(d)約0.5重量%〜約20重量%のモルホリノプロピルアミン
(e)メチルベンゾトリアゾールおよびトリルトリアゾールからなる群から選択される約0.1重量%〜約0.5重量%の腐食抑制剤化合物、ならびに任意の1以上の以下の成分、
(f)組成物中に存在するとき、約0.01重量%〜約1重量%の量の1以上の金属イオンキレート剤、
(g)組成物中に存在するとき、約0.5重量%〜約40重量%の量の1以上の他の極性有機溶媒、
(h)組成物中に存在するとき、約2重量%〜約12重量%の量の1以上の第三級アミン、
(i)組成物中に存在するとき、約0.01重量%〜10重量%の量の1以上のカテコールまたはアルキルカテコール、および
(j)組成物中に存在するとき、約0.01重量%〜1重量%の量の1以上の界面活性剤、
を含む組成物。 - 前記組成物が、5−メチルベンゾトリアゾール、3−モルホリノプロピルアミンおよびエチレングリコールブチルエーテルを含有する、請求項1に記載の除去組成物。
- 前記組成物が、第三級アミンを含有し、前記第三級アミンがトリエタノールアミンである、請求項1に記載の除去組成物。
- 前記組成物が、第三級アミンを含有し、前記第三級アミンがトリエタノールアミンである、請求項1に記載の除去組成物。
- 前記組成物が、金属イオンキレート剤を含有し、前記金属イオンキレート剤がtrans−1,2−シクロヘキサンジアミン四酢酸である、請求項3に記載の除去組成物。
- 前記組成物が、金属イオンキレート剤を含有し、前記金属イオンキレート剤がtrans−1,2−シクロヘキサンジアミン四酢酸である、請求項4に記載の除去組成物。
- 前記組成物が、他の極性有機溶媒を含有し、前記他の極性有機溶媒がN−メチルピロリドンである、請求項5に記載の除去組成物。
- 前記組成物が、他の極性有機溶媒を含有し、前記他の極性有機溶媒がN−メチルピロリドンである、請求項6に記載の除去組成物。
- 前記組成物が、カテコールまたはアルキルカテコールを含有する、請求項1に記載の除去組成物。
- 前記組成物が、4−t−ブチルカテコールを含有する、請求項9に記載の除去組成物。
- 約20.9%の水、約20%のN−メチルピロリドン、約46.5%のエチレングリコールブチルエーテル、約5%のエチレングリコール、約6%のトリエタノールアミン、約1.5%のモルホリノプロピルアミン、および約0.1%のメチルベンゾトリアゾールを含む、請求項1に記載の除去組成物。
- 約20.75%の水、約20%のN−メチルピロリドン、約46.5%のエチレングリコールブチルエーテル、約5%のエチレングリコール、約6%のトリエタノールアミン、約1.5%のモルホリノプロピルアミン、約0.1%のtrans−1,2−シクロヘキサンジアミン四酢酸、n−ドデシル基を有する約0.05%の双極性ピロリドン環状界面活性剤および約0.1%のメチルベンゾトリアゾールを含む、請求項1に記載の除去組成物。
- 約19.95%の水、約60.7%のエチレングリコールブチルエーテル、約10%のエチレングリコール、約9%のモルホリノプロピルアミン、約0.1%のtrans−1,2−シクロヘキサンジアミン四酢酸、n−ドデシル基を有する約0.05%の双極性ピロリドン環状界面活性剤および約0.2%のメチルベンゾトリアゾールを含む、請求項1に記載の除去組成物。
- 約20.0%の水、約19.2%のn−メチルピロリジノン、約44.7%のエチレングリコールブチルエーテル、約4.8%のエチレングリコール、約1.4%のモルホリノプロピルアミン、約0.1%のメチルベンゾトリアゾールならびにカテコールおよびアルキルカテコールから選択される、約4%のアルミニウム腐食抑制剤を含む、請求項1に記載の除去組成物。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項1に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項2に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項3に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項4に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項5に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項6に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項7に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項8に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項9に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項10に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項11に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項12に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項13に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムを除去するのに効果的な時間および温度で請求項14に記載の組成物と前記マイクロ電子デバイスとを接触させる工程を含む、マイクロ電子デバイスからエッチング処理後(PET)のポリマーフィルムの除去プロセス。
- 前記マイクロ電子デバイスが低κ誘電体を有する、請求項15に記載のプロセス。
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US201161519902P | 2011-06-01 | 2011-06-01 | |
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PCT/US2012/040187 WO2012166902A1 (en) | 2011-06-01 | 2012-05-31 | SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-ĸ DIELECTRICS |
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WO2016076031A1 (ja) * | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
TWI690780B (zh) | 2014-12-30 | 2020-04-11 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻之剝離組成物 |
EP3328969B1 (en) * | 2015-07-29 | 2020-04-01 | Ecolab USA Inc. | Heavy amine neutralizing agents for olefin or styrene production |
WO2017218147A1 (en) * | 2016-06-13 | 2017-12-21 | Avantor Performance Materials, Llc | Cleaning compositions for microelectronic substrates containing aluminum |
US11035044B2 (en) * | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
CN110713868A (zh) * | 2018-07-13 | 2020-01-21 | 巴斯夫欧洲公司 | 可移除氮化钛的蚀刻后残渣清理溶液 |
US12089590B2 (en) | 2019-02-06 | 2024-09-17 | Virox Technologies, Inc. | Shelf-stable antimicrobial compositions |
US10952430B2 (en) | 2019-02-06 | 2021-03-23 | Virox Technologies Inc. | Shelf-stable antimicrobial compositions |
US20220162526A1 (en) * | 2020-11-25 | 2022-05-26 | Ecolab Usa Inc. | Multipurpose alkaline compositions and methods of use |
US12046476B2 (en) * | 2022-03-25 | 2024-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet etching chemistry and method of forming semiconductor device using the same |
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US6951710B2 (en) * | 2003-05-23 | 2005-10-04 | Air Products And Chemicals, Inc. | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof |
BRPI0416067A (pt) * | 2003-10-29 | 2007-01-02 | Mallinckrodt Baker Inc | removedores alcalinos de resìduo de cinza/gravação pós-plasma e composições de descascamento de fotorresistes contendo inibidores de corrosão de haleto de metal |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
JP2007536566A (ja) * | 2004-05-07 | 2007-12-13 | ドウジン セミケム カンパニー リミテッド | (フォト)レジスト除去用組成物 |
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EP1701218A3 (en) * | 2005-03-11 | 2008-10-15 | Rohm and Haas Electronic Materials LLC | Polymer remover |
US7700533B2 (en) * | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
JP2009512194A (ja) | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
US8058219B2 (en) * | 2005-10-13 | 2011-11-15 | Advanced Technology Materials, Inc. | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant |
WO2007111694A2 (en) * | 2005-11-09 | 2007-10-04 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
US7674755B2 (en) * | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
JP4499751B2 (ja) * | 2006-11-21 | 2010-07-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | フォトレジスト、エッチ残留物及びbarcを除去するための配合物及び同配合物を含む方法 |
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US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
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IL229644A0 (en) | 2014-01-30 |
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