WO2016076031A1 - タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 - Google Patents
タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 Download PDFInfo
- Publication number
- WO2016076031A1 WO2016076031A1 PCT/JP2015/078075 JP2015078075W WO2016076031A1 WO 2016076031 A1 WO2016076031 A1 WO 2016076031A1 JP 2015078075 W JP2015078075 W JP 2015078075W WO 2016076031 A1 WO2016076031 A1 WO 2016076031A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tungsten
- film
- cleaning liquid
- cleaning
- photoresist
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 189
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 123
- 239000010937 tungsten Substances 0.000 title claims abstract description 123
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 239000000463 material Substances 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 85
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000003513 alkali Substances 0.000 claims abstract description 17
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims description 88
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 42
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 32
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 22
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- 235000011118 potassium hydroxide Nutrition 0.000 claims description 14
- -1 tungsten nitride Chemical class 0.000 claims description 12
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000002978 peroxides Chemical class 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 6
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 6
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 6
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 6
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 5
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 claims description 3
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 3
- WJYIASZWHGOTOU-UHFFFAOYSA-N Heptylamine Chemical compound CCCCCCCN WJYIASZWHGOTOU-UHFFFAOYSA-N 0.000 claims description 3
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001553 barium compounds Chemical class 0.000 claims description 3
- ZOAIGCHJWKDIPJ-UHFFFAOYSA-M caesium acetate Chemical compound [Cs+].CC([O-])=O ZOAIGCHJWKDIPJ-UHFFFAOYSA-M 0.000 claims description 3
- ZMCUDHNSHCRDBT-UHFFFAOYSA-M caesium bicarbonate Chemical compound [Cs+].OC([O-])=O ZMCUDHNSHCRDBT-UHFFFAOYSA-M 0.000 claims description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 3
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 3
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 3
- 229940043430 calcium compound Drugs 0.000 claims description 3
- 150000001674 calcium compounds Chemical class 0.000 claims description 3
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 3
- 229960001231 choline Drugs 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 3
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 claims description 3
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052808 lithium carbonate Inorganic materials 0.000 claims description 3
- 229910000032 lithium hydrogen carbonate Inorganic materials 0.000 claims description 3
- HQRPHMAXFVUBJX-UHFFFAOYSA-M lithium;hydrogen carbonate Chemical compound [Li+].OC([O-])=O HQRPHMAXFVUBJX-UHFFFAOYSA-M 0.000 claims description 3
- 229940100684 pentylamine Drugs 0.000 claims description 3
- 239000011736 potassium bicarbonate Substances 0.000 claims description 3
- 229910000028 potassium bicarbonate Inorganic materials 0.000 claims description 3
- 235000015497 potassium bicarbonate Nutrition 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- 235000011181 potassium carbonates Nutrition 0.000 claims description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims description 3
- 229940086066 potassium hydrogencarbonate Drugs 0.000 claims description 3
- 239000001632 sodium acetate Substances 0.000 claims description 3
- 235000017281 sodium acetate Nutrition 0.000 claims description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 235000017550 sodium carbonate Nutrition 0.000 claims description 3
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 3
- 150000003438 strontium compounds Chemical class 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- 239000010408 film Substances 0.000 description 96
- 239000000243 solution Substances 0.000 description 61
- 230000000052 comparative effect Effects 0.000 description 42
- 238000004519 manufacturing process Methods 0.000 description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 6
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000908 ammonium hydroxide Substances 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 3
- 229910001626 barium chloride Inorganic materials 0.000 description 3
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 3
- 229910001863 barium hydroxide Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910001631 strontium chloride Inorganic materials 0.000 description 3
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 2
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 2
- 229910001620 barium bromide Inorganic materials 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 description 2
- 229910001638 barium iodide Inorganic materials 0.000 description 2
- 229940075444 barium iodide Drugs 0.000 description 2
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 description 2
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000000174 gluconic acid Substances 0.000 description 2
- 235000012208 gluconic acid Nutrition 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- LLJWABOOFANACB-UHFFFAOYSA-N 1-chloro-1,1,3,3,3-pentafluoropropane Chemical compound FC(F)(F)CC(F)(F)Cl LLJWABOOFANACB-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- WHQOKFZWSDOTQP-UHFFFAOYSA-N 2,3-dihydroxypropyl 4-aminobenzoate Chemical compound NC1=CC=C(C(=O)OCC(O)CO)C=C1 WHQOKFZWSDOTQP-UHFFFAOYSA-N 0.000 description 1
- VASZYFIKPKYGNC-DHTOPLTISA-N 2-[[(1r,2r)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid;hydrate Chemical compound O.OC(=O)CN(CC(O)=O)[C@@H]1CCCC[C@H]1N(CC(O)=O)CC(O)=O VASZYFIKPKYGNC-DHTOPLTISA-N 0.000 description 1
- SHIQLFRCVFUYEK-UHFFFAOYSA-M 2-acetyloxyethyl(trimethyl)azanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC(=O)OCC[N+](C)(C)C SHIQLFRCVFUYEK-UHFFFAOYSA-M 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- NHQDETIJWKXCTC-UHFFFAOYSA-N 3-chloroperbenzoic acid Chemical compound OOC(=O)C1=CC=CC(Cl)=C1 NHQDETIJWKXCTC-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- JXONLADOXNYFJC-UHFFFAOYSA-L Cl(=O)(=O)(=O)[O-].[Sr+2].Cl(=O)(=O)(=O)[O-].[Al+3] Chemical compound Cl(=O)(=O)(=O)[O-].[Sr+2].Cl(=O)(=O)(=O)[O-].[Al+3] JXONLADOXNYFJC-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MHZDPHLNZSQJMO-UHFFFAOYSA-N [Na].CCCCCCCCCCCCN(CC(N)N)CC(O)=O Chemical compound [Na].CCCCCCCCCCCCN(CC(N)N)CC(O)=O MHZDPHLNZSQJMO-UHFFFAOYSA-N 0.000 description 1
- 239000000011 acetone peroxide Substances 0.000 description 1
- 235000019401 acetone peroxide Nutrition 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- OOULUYZFLXDWDQ-UHFFFAOYSA-L barium perchlorate Chemical compound [Ba+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O OOULUYZFLXDWDQ-UHFFFAOYSA-L 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PSIBWKDABMPMJN-UHFFFAOYSA-L cadmium(2+);diperchlorate Chemical compound [Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PSIBWKDABMPMJN-UHFFFAOYSA-L 0.000 description 1
- NZUYJPMKCSBVLS-UHFFFAOYSA-N cadmium;hydrogen peroxide Chemical compound [Cd].OO NZUYJPMKCSBVLS-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- WKDKOOITVYKILI-UHFFFAOYSA-M caesium perchlorate Chemical compound [Cs+].[O-]Cl(=O)(=O)=O WKDKOOITVYKILI-UHFFFAOYSA-M 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 229940046413 calcium iodide Drugs 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- TWFKOYFJBHUHCH-UHFFFAOYSA-K diperchloryloxyindiganyl perchlorate Chemical compound [In+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O TWFKOYFJBHUHCH-UHFFFAOYSA-K 0.000 description 1
- XOYUVEPYBYHIFZ-UHFFFAOYSA-L diperchloryloxylead Chemical compound [Pb+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O XOYUVEPYBYHIFZ-UHFFFAOYSA-L 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical group 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 description 1
- MYGVQOYLIMJKKU-UHFFFAOYSA-K lanthanum(3+);triperchlorate Chemical compound [La+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MYGVQOYLIMJKKU-UHFFFAOYSA-K 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- HPGPEWYJWRWDTP-UHFFFAOYSA-N lithium peroxide Chemical compound [Li+].[Li+].[O-][O-] HPGPEWYJWRWDTP-UHFFFAOYSA-N 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- LULAYUGMBFYYEX-UHFFFAOYSA-N metachloroperbenzoic acid Natural products OC(=O)C1=CC=CC(Cl)=C1 LULAYUGMBFYYEX-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- XMMDVXFQGOEOKH-UHFFFAOYSA-N n'-dodecylpropane-1,3-diamine Chemical compound CCCCCCCCCCCCNCCCN XMMDVXFQGOEOKH-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910001489 rubidium perchlorate Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- 229910001625 strontium bromide Inorganic materials 0.000 description 1
- 229940074155 strontium bromide Drugs 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- UHCGLDSRFKGERO-UHFFFAOYSA-N strontium peroxide Chemical compound [Sr+2].[O-][O-] UHCGLDSRFKGERO-UHFFFAOYSA-N 0.000 description 1
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/08—Liquid soap, e.g. for dispensers; capsuled
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/12—Carbonates bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
Definitions
- the present invention suppresses damage between a low dielectric constant film and a material containing tungsten in a manufacturing process of a semiconductor element having a low dielectric constant film and a material containing tungsten, and removes the photoresist on the surface of the semiconductor element.
- the present invention relates to a cleaning liquid and a cleaning method using the same.
- Highly integrated semiconductor devices are usually manufactured after forming a conductive thin film such as a metal film serving as a conductive wiring material on an element such as a silicon wafer, or an interlayer insulating film for the purpose of insulating between conductive thin films.
- a photoresist is uniformly coated on the surface to provide a photosensitive layer, and selective exposure / development processing is performed on the surface to produce a desired resist pattern.
- a desired pattern is formed on the thin film by subjecting the interlayer insulating film to a dry etching process using the resist pattern as a mask.
- a series of steps is generally taken in which the photoresist is completely removed by ashing with oxygen plasma or cleaning with a cleaning liquid.
- the conductive wiring material is shifted from aluminum to copper having a lower electrical resistance, and the interlayer insulating film is changed from a silicon oxide film to a low dielectric constant film (a film having a relative dielectric constant smaller than 3, hereinafter referred to as “low-k film”).
- low-k film a film having a relative dielectric constant smaller than 3, hereinafter referred to as “low-k film”.
- a material containing tungsten having high heat resistance is used for a contact plug for connection with a substrate.
- the structure of the gate of a transistor has been changed from a combination of silicon oxide and polycrystalline silicon to a combination of a high dielectric constant material and a metal.
- a metal a material containing tungsten may be used.
- aluminum wiring a material containing tungsten is used for a contact plug that connects wirings of different layers.
- the photoresist In the process of manufacturing a semiconductor element using a material containing tungsten, when the photoresist is removed by oxygen plasma, the low-k film is exposed to oxygen plasma or the like and damaged, and the electrical characteristics are significantly deteriorated. Arise. In addition, a material containing tungsten is exposed to oxygen plasma or the like and is damaged, resulting in problems in subsequent manufacturing processes. Therefore, in the manufacture of a semiconductor element using a material containing a low-k film and tungsten, the photoresist is removed to the same extent as in the oxygen plasma process while suppressing damage to the material containing the low-k film and tungsten. Is required.
- Patent Document 1 proposes a wiring formation method using a cleaning liquid containing potassium hydroxide, quaternary ammonium hydroxide, an organic solvent, pyrazole, and water.
- this cleaning solution can suppress the damage of the material containing tungsten while removing the photoresist, but cannot suppress the damage of the low-k film, and cannot be used for this purpose (Comparative Example 6). , 7).
- Patent Document 2 proposes a wiring formation method using a cleaning liquid containing a fluorine compound, a metal corrosion inhibitor, a passivating agent, and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage to the low-k film (Comparative Example). 8).
- Patent Document 3 proposes a wiring formation method using a cleaning liquid containing ammonium fluoride, gluconic acid, and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage to the low-k film (Comparative Example). 9).
- Patent Document 4 proposes a wiring formation method using a cleaning liquid containing phosphoric acid, hydrochloric acid, amine, alanine surfactant and water.
- this cleaning solution can suppress damage to the material containing tungsten while removing the photoresist, but cannot prevent damage to the low-k film, and cannot be used for this purpose (Comparative Example 10). , 11).
- Patent Document 5 proposes a wiring formation method using a cleaning liquid containing hydrogen peroxide, triazoles, and water.
- this cleaning solution can suppress damage to the low-k film, it cannot be used for this purpose because it cannot remove the photoresist and damage to the material containing tungsten (Comparative Example). 12).
- Patent Document 6 proposes a wiring formation method using a cleaning liquid containing hydrogen peroxide, a quaternary ammonium hydroxide, a quaternary ammonium salt, and water.
- this cleaning solution can suppress damage to the Low-k film, it cannot be used for this purpose because it cannot remove photoresist and suppress damage to tungsten (see Comparative Example 13). ).
- Patent Document 7 proposes a wiring formation method using a cleaning liquid containing an amine, a hydroxylamine salt, a quaternary ammonium hydroxide, an organic acid, an organic solvent, and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage to the low-k film (Comparative Example). 14).
- Patent Document 8 proposes a wiring formation method using a cleaning liquid containing N, N-diethylhydroxylamine, hydroxylamine, a water-soluble organic solvent, a metal anticorrosive, and water.
- this cleaning solution can suppress damage to the material containing tungsten while removing the photoresist, but cannot prevent damage to the low-k film, and cannot be used for this purpose (Comparative Example 15). , 16).
- Patent Document 9 proposes a wiring formation method using a cleaning liquid containing an inorganic base, a quaternary ammonium hydroxide, an organic solvent, an azole, and water.
- this cleaning solution can suppress damage to the material containing tungsten while removing the photoresist, but cannot prevent damage to the low-k film, and cannot be used for this purpose (Comparative Example 17). , 18).
- Patent Document 10 proposes a wiring formation method using a cleaning liquid containing hydrogen peroxide, hydrofluoric acid, an organic solvent, an azole, and water.
- this cleaning solution cannot remove the photoresist.
- damage to the material containing tungsten and damage to the low-k film cannot be suppressed, it cannot be used for this purpose (see Comparative Example 19).
- Patent Document 11 proposes a wiring formation method using a cleaning liquid containing hydrofluoric acid, an organic solvent, an azole, and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage the Low-k film (Comparative Example). 20).
- Patent Document 12 proposes a wiring formation method using a cleaning liquid containing hydrofluoric acid, a silicon-containing compound, a surfactant, a carboxylic acid, an anticorrosive, and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage to the low-k film (Comparative Example). 21).
- Patent Document 13 proposes a wiring formation method using a cleaning liquid containing sugars, hydroxylamines, quaternary ammonium compounds, organic acids and water.
- this cleaning solution can suppress damage to the low-k film, it cannot be used for this purpose because it cannot remove the photoresist and damage to the material containing tungsten (Comparative Example). 22).
- Patent Document 14 and Patent Document 15 propose a wiring formation method using a cleaning liquid containing an acid or a salt thereof, a chelating agent containing a nitrogen atom, an organic solvent and water.
- this cleaning solution can suppress damage to the material containing tungsten, it cannot be used for this purpose because it cannot remove the photoresist and damage to the low-k film (Comparative Example). 23).
- alkali, WzMXy (wherein M is selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb)
- X is a halide selected from the group consisting of F, Cl, Br and I;
- W is selected from H, alkali or alkaline earth metals and metal ion-free hydroxide base moieties
- Y is a number from 4 to 6 depending on the metal halide; and z is a number from 1, 2 or 3).
- the photoresist cannot be removed with this cleaning solution, and damage to the material containing tungsten and the low-k film cannot be suppressed, so that it cannot be used for this purpose (see Comparative Example 24).
- the cleaning liquid blended with WzMXy described in Patent Document 16 has the damage to the tungsten-containing material. It cannot be suppressed, and damages the low-k film (see Comparative Example 25).
- An object of the present invention is to suppress damage of a low-k film and a material containing tungsten in a manufacturing process of a semiconductor element having a low-k film and a material containing tungsten, and to form a photoresist on the surface of the semiconductor element.
- a cleaning liquid to be removed and a cleaning method using the same are provided.
- the present invention is as follows.
- the cleaning liquid comprising ⁇ 5 mass%, inorganic alkali and / or organic alkali 0.1-30 mass%, and water.
- ⁇ 3> The cleaning liquid according to ⁇ 1> or ⁇ 2>, wherein the material containing 10 atomic% or more of tungsten is at least one selected from the group consisting of tungsten oxide, tungsten nitride, tungsten, and tungsten silicide. It is. ⁇ 4> The cleaning liquid according to any one of ⁇ 1> to ⁇ 3>, wherein the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound, and a barium compound.
- the inorganic alkali is lithium hydroxide, lithium carbonate, lithium hydrogen carbonate, lithium acetate, sodium hydroxide, sodium carbonate, sodium hydrogen carbonate, sodium acetate, potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium acetate, One or more selected from the group consisting of cesium hydroxide, cesium carbonate, cesium bicarbonate, cesium acetate, and ammonia;
- the organic alkali is tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, choline, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, propylamine, dipropylamine , Butylamine, dibutylamine, pentylamine, hexylamine, heptylamine, octylamine,
- ⁇ 6> The cleaning liquid according to any one of ⁇ 1> to ⁇ 5>, which substantially does not contain peroxide, perchloric acid, and perchlorate.
- ⁇ 7> A cleaning method for removing a photoresist on a surface of a semiconductor element having a low dielectric constant film (Low-k film) and a material containing 10 atomic% or more of tungsten, wherein ⁇ 6> to ⁇ 6 > A cleaning method using the cleaning liquid according to any one of the above.
- Low-k film low dielectric constant film
- the cleaning liquid of the present invention By using the cleaning liquid of the present invention and the cleaning method using the same, it is possible to suppress the damage of the material containing the low-k film and tungsten and to selectively remove the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor element. Therefore, it is possible to manufacture high-precision and high-quality semiconductor elements with a high yield.
- the cleaning liquid of the present invention is used in a cleaning process for manufacturing a semiconductor element. At this time, the photoresist can be cleaned and removed to a satisfactory degree, and damage to a material including a low-k film and tungsten is suppressed. Can do.
- the material containing tungsten contained in the semiconductor element to which the cleaning liquid of the present invention is applied is a material containing 10 atomic% or more of tungsten, and the atomic composition percentage of tungsten is preferably 15 atomic% or more, more preferably. Is 20 atomic% or more, more preferably 25 atomic% or more, and particularly preferably 30 atomic% or more.
- Specific examples of the material containing tungsten include tungsten oxide, tungsten nitride, tungsten, tungsten silicide, and preferably tungsten oxide, tungsten nitride, and tungsten.
- the material containing tungsten is not limited thereto as long as it is a material containing 10 atomic% or more of tungsten.
- the content of tungsten can be examined by measuring the composition ratio of tungsten atoms of a material containing tungsten as an object by ion sputtering of X-ray photoelectron spectroscopy (XPS).
- XPS X-ray photoelectron spectroscopy
- the vicinity of the surface of the material containing tungsten may be oxidized, so that the composition ratio of oxygen atoms may be higher than the inside of the material. Therefore, until the composition ratio of tungsten and oxygen atoms becomes constant, the surface of the material containing tungsten is etched by ion sputtering, and the composition ratio of tungsten atoms inside the tungsten-containing material exposed by ion sputtering is measured.
- a fully automatic XPS analyzer K-Alpha manufactured by Thermo Fisher Scientific Co., Ltd.
- the concentration range of the alkaline earth metal compound contained in the cleaning liquid of the present invention is 0.001 to 5% by mass, preferably 0.005 to 3% by mass, and more preferably 0.01 to 1% by mass. Particularly preferred is 0.05 to 0.8% by mass.
- the material containing tungsten can be effectively prevented from being corroded.
- the concentration range exceeds 5% by mass, the removability of the photoresist may deteriorate.
- the present inventors have found for the first time that the alkaline earth metal compound contained in the cleaning solution exhibits an anticorrosive effect on a material containing tungsten. Although the mechanism is not clarified, it is considered that the alkaline earth metal compound is adsorbed on the surface of tungsten and prevents alkali contained in the cleaning solution from attacking tungsten.
- alkaline earth metal compounds are calcium compounds, strontium compounds, and barium compounds. More specifically, barium nitrate, barium hydroxide, barium chloride, barium acetate, barium oxide, barium bromide, barium carbonate, barium fluoride, barium iodide, barium sulfate, barium phosphate, calcium nitrate, calcium chloride, Calcium acetate, calcium hydroxide, calcium bromide, calcium carbonate, calcium fluoride, calcium iodide, calcium sulfate, calcium phosphate, strontium carbonate, strontium chloride, strontium acetate, strontium hydroxide, strontium bromide, strontium fluoride, iodide Examples include, but are not limited to, strontium, strontium sulfate, strontium phosphate, and the like.
- barium nitrate, barium hydroxide, barium chloride, barium acetate, barium oxide, barium bromide, barium carbonate, barium fluoride, barium iodide, barium sulfate, barium phosphate, calcium nitrate, and strontium chloride are preferable.
- These alkaline earth metal compounds can be blended alone or in combination of two or more.
- the concentration range of the inorganic alkali and / or organic alkali (the total when both are used) contained in the cleaning liquid of the present invention is 0.1 to 30% by mass, preferably 0.5 to 25% by mass. More preferably, the content is 1 to 20% by mass, and particularly preferably 2 to 15% by mass. Within the above range, the material containing tungsten can be effectively prevented from being corroded. If the concentration range exceeds 30% by mass, the Low-k film may be damaged.
- examples include potassium, cesium hydroxide, cesium carbonate, cesium hydrogen carbonate, cesium acetate, and ammonia, but are not limited thereto. Among these, potassium hydroxide and ammonia are preferable.
- the water contained in the cleaning liquid of the present invention is preferably water from which metal ions, organic impurities, particle particles, and the like have been removed by distillation, ion exchange treatment, filter treatment, various adsorption treatments, etc., and particularly pure water and ultrapure water. preferable.
- the concentration of water in the cleaning liquid is preferably 40% by mass or more, more preferably 50% by mass or more, and further preferably 60% by mass or more. In that case, the concentration of water is the remainder excluding various drugs.
- the pH value of the cleaning liquid of the present invention is preferably used in an arbitrary range of 10-14.
- a more preferable pH value is 11 to 14, more preferably 11.4 to 14, and particularly preferably 12 to 14.
- the pH value is within this range, damage to the material containing tungsten can be effectively suppressed, and the photoresist on the surface of the object to be processed can be selectively removed.
- the cleaning liquid of the present invention is substantially free of peroxide, perchloric acid and perchlorate.
- the term “substantially” as used herein means that the total of peroxide, perchloric acid and perchlorate is less than 1% by mass. Also, one embodiment of the cleaning liquid of the present invention does not contain any peroxide, perchloric acid and perchlorate.
- peroxides include hydrogen peroxide, urea peroxide, metachloroperbenzoic acid, tert-butyl hydroperoxide, peracetic acid, di-tert-butyl peroxide, benzoyl peroxide, acetone peroxide, methyl ethyl ketone peroxide, hexa Methylenetriperoxide, cumene hydroperoxide, lithium peroxide, potassium peroxide, sodium peroxide, rubidium peroxide, cesium peroxide, beryllium peroxide, magnesium peroxide, calcium peroxide, strontium peroxide, barium peroxide, peroxide Examples include zinc, cadmium peroxide, and copper peroxide.
- perchloric acid and perchlorate include perchloric acid, ammonium perchlorate, potassium perchlorate, calcium perchlorate, magnesium perchlorate, silver perchlorate, sodium perchlorate.
- additives conventionally used in semiconductor cleaning liquids may be blended as long as the object of the present invention is not impaired.
- an oxidizing agent other than the above-mentioned peroxide, an acid, a metal anticorrosive, a water-soluble organic solvent, a fluorine compound, a reducing agent, a chelating agent, a surfactant, an antifoaming agent, etc. may be added. it can.
- the temperature at which the cleaning liquid of the present invention is used is 10 to 85 ° C., preferably 30 to 70 ° C., and may be appropriately selected depending on the etching conditions and the semiconductor element used.
- ultrasonic waves can be used in combination as necessary.
- the time for using the cleaning liquid of the present invention is from 0.1 to 120 minutes, preferably from 1 to 60 minutes, and may be appropriately selected depending on the etching conditions and the semiconductor element to be used.
- an organic solvent such as alcohol can be used, but rinsing with water is sufficient.
- HSQ hydroxysilsesquioxane
- MSQ methylsilsesoxane
- OCD organic carbon-doped silicon oxide
- SiOC carbon-doped silicon oxide
- Aurora trade name, manufactured by ASM International
- Coral trade name, manufactured by Novellus Systems
- inorganic Orion trade name, manufactured by Trikon Tenclogies
- the Low-k film is not limited to these.
- Examples 1 to 10 In the test, a semiconductor element having a wiring structure with a cross section as shown in FIG. 1 was used, and the cleaning effect was examined. In order to remove the photoresist 3, it was immersed in the cleaning solution shown in Table 1 at the temperature and time shown in Table 2. At the time of immersion, the stirrer was rotated at 350 rpm in the cleaning liquid. Then, rinsing with ultrapure water and drying by dry nitrogen gas injection were performed. By observing the cleaned semiconductor element with an SEM, the removal state of the photoresist 3 (FIG. 1) and the damage of the material 1 containing tungsten (FIG. 1) and the low-k film 2 (FIG. 1) were determined.
- the material containing tungsten used for the test was tungsten oxide, containing 30 atomic percent tungsten.
- the tungsten content was measured by the X-ray photoelectron spectroscopy (XPS) ion sputtering method as described above.
- XPS X-ray photoelectron spectroscopy
- K-Alpha manufactured by Thermo Fisher Scientific Co., Ltd.
- Comparative Examples 1-5 In the cleaning liquids used in Examples 1 to 5 (Table 1, cleaning liquids 1A to 1D), the semiconductor element shown in FIG. 1 is a cleaning liquid (Table 3, cleaning liquids 2A to 2D) to which barium nitrate (alkaline earth metal compound) is not added. Was washed. Table 5 shows cleaning conditions and cleaning results. There was no difference in the removal property of the photoresist 3 and the damage of the Low-k film 2 as compared with the cleaning solutions obtained by adding barium nitrate to the cleaning solutions 2A to 2D shown in Comparative Examples 1 to 5 (Table 1, cleaning solutions 1A to 1D). However, damage was observed in all the materials 1 containing tungsten.
- the cleaning liquids 2A to 2D are used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention.
- the alkaline earth metal compound is useful for suppressing damage to the material 1 containing tungsten without deteriorating the removability of the photoresist 3.
- Comparative Examples 6 and 7 (Invention described in Patent Document 1) Cleaning solution containing 0.005% by weight potassium hydroxide, 10% by weight tetramethylammonium hydroxide, 50% by weight diethylene glycol monomethyl ether, 0.1% by weight pyrazole, and 38.895% by weight water (Table 4, cleaning solution 2E) The semiconductor element shown in FIG. 1 was cleaned. Table 5 shows cleaning conditions and evaluation results. Although the photoresist can be removed by washing with this cleaning solution at 50 ° C. for 20 minutes, both the material containing tungsten and the low-k film were damaged (Comparative Example 6). If the immersion time is relaxed to 25 ° C.
- the 2E cleaning solution is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 8 (Invention described in Patent Document 2) A cleaning solution containing 0.1% by weight of benzotriazole, 0.1% by weight of 1,2,4-triazole, 5% by weight of ammonium fluoride, 1% by weight of boric acid, and 93.8% by weight of water (Table 4, Cleaning Solution 2F)
- Table 4, Cleaning Solution 2F The semiconductor element shown in FIG. Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged.
- the cleaning solution of 2F is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 9 (Invention described in Patent Document 3)
- the semiconductor element shown in FIG. 1 was cleaned with a cleaning liquid (Table 4, cleaning liquid 2G) containing 0.25 mass% ammonium fluoride, 0.06 mass% gluconic acid, and 99.69 mass% water.
- Table 5 shows cleaning conditions and evaluation results.
- this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged. Therefore, the 2G cleaning solution is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Examples 10 and 11 (Invention described in Patent Document 4) A cleaning solution containing 1.35% by mass of phosphoric acid, 1% by mass of hydrochloric acid, 5% by mass of tetramethylammonium hydroxide, 0.01% by mass of sodium lauryldiaminoethylglycine, and 92.64% by mass of water (Table 4, cleaning solution 2H) The semiconductor element shown in FIG. 1 was cleaned. Table 5 shows cleaning conditions and evaluation results. Cleaning with this cleaning solution for 6 minutes allowed the photoresist to be removed without damaging the tungsten-containing material, but damaged the Low-k film (Comparative Example 10).
- the 2H cleaning solution is used for the purpose of suppressing damage to the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 12 (Invention described in Patent Document 5)
- the semiconductor element shown in FIG. 1 was cleaned with a cleaning solution (Table 4, cleaning solution 2I) containing 5% by mass of hydrogen peroxide, 0.01% by mass of aminotriazole, and 94.99% by mass of water.
- Table 5 shows cleaning conditions and evaluation results.
- this cleaning liquid can suppress the damage to the Low-k film, the photoresist cannot be removed, and the material containing tungsten is damaged. Therefore, the 2I cleaning solution is used for the purpose of suppressing damage to the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 13 (Invention described in Patent Document 6) Hydrogen peroxide 15% by mass, benzyltrimethylammonium hydroxide 0.2% by mass, Esocard O / 12 [oleylbis (2-hydroxyethyl) methylammonium-bis (trifluoromethanesulfonyl) imide] (manufactured by Lion Corporation) 0.001
- the semiconductor device shown in FIG. 1 was cleaned with a cleaning liquid (Table 4, cleaning liquid 2J) containing mass% and water 84.799 mass%. Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress the damage to the Low-k film, the photoresist cannot be removed, and the material containing tungsten is damaged.
- the 2J cleaning solution is used for the purpose of suppressing the damage on the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 14 (Invention described in Patent Document 7) Octylamine 1.9% by weight, hydroxylamine sulfate 6% by weight, tetramethylammonium hydroxide 4.9% by weight, formic acid 2% by weight, 2-methyl-4-pentanediol 8% by weight, and water 77.2% by weight
- the semiconductor element shown in FIG. 1 was cleaned with a cleaning solution containing% (Table 4, cleaning solution 2K).
- Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged.
- the 2K cleaning solution is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Examples 15 and 16 (Invention described in Patent Document 8)
- the element was cleaned.
- Table 5 shows cleaning conditions and evaluation results. When this cleaning solution was washed at 50 ° C. for 1 minute, the photoresist could be removed without damaging the material containing tungsten, but the Low-k film was damaged (Comparative Example 15).
- the 2L cleaning solution is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Examples 17 and 18 (Invention described in Patent Document 9) A cleaning solution containing 10% by mass of tetramethylammonium hydroxide, 0.02% by mass of potassium hydroxide, 2% by mass of 2-phenyl-4-methylimidazole, 20% by mass of diethylene glycol monomethyl ether, and 67.98% by mass of water (Table 4) The semiconductor element shown in FIG. 1 was cleaned with a cleaning solution 2M). Table 5 shows cleaning conditions and evaluation results. Although the photoresist can be removed by washing with this cleaning solution at 50 ° C. for 10 minutes, the material containing tungsten and the low-k film were damaged (Comparative Example 17). If the immersion temperature is lowered to 30 ° C.
- the processing time is shortened to 1 minute in order to suppress damage to the material containing tungsten and the low-k film, the material containing tungsten is not damaged, but the photoresist cannot be removed.
- the Low-k film was damaged (Comparative Example 18). Therefore, the 2M cleaning solution is used for the purpose of suppressing the damage of the tungsten-containing material and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- FIG. 1 shows a cleaning liquid (Table 4, cleaning liquid 2N) containing 14% by mass of hydrogen peroxide, 0.3% by mass of hydrofluoric acid, 58.4% by mass of diethylene glycol monomethyl ether, 1% by mass of vinylimidazole, and 26.3% by mass of water.
- Table 4 shows cleaning conditions and evaluation results. With this cleaning solution, the photoresist could not be removed, and the material containing tungsten and the low-k film were damaged.
- the 2N cleaning solution cannot be used for the purpose of suppressing damage to the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device that is the subject of the present invention. (Table 5).
- Comparative Example 20 (Invention described in Patent Document 11) A cleaning liquid (Table 4, cleaning liquid 2O) containing 0.3% by mass of hydrofluoric acid, 60% by mass of diethylene glycol monomethyl ether, 1% by mass of 2-ethyl-4-methylimidazole, and 38.7% by mass of water is shown in FIG. The semiconductor element was cleaned. Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged.
- Table 4 cleaning liquid 2O
- the cleaning solution of 2O is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 21 (Invention described in Patent Document 12) A cleaning solution containing 0.1% by mass of hydrofluoric acid, 0.1% by mass of aminopropyltrimethoxysilane, 0.1% by mass of benzotriazole, 1% by mass of ethanol, 1% by mass of acetic acid, and 97.7% by mass of water (Table 4) The semiconductor element shown in FIG. 1 was cleaned with the cleaning liquid 2P). Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged.
- the 2P cleaning liquid is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 22 (Invention described in Patent Document 13)
- a cleaning liquid (Table 4, cleaning liquid 2Q) containing 2% by weight of hydroxylamine sulfate, 3.4% by weight of tetramethylammonium hydroxide, 2% by weight of citric acid, 0.5% by weight of sorbitol, and 92.1% by weight of water
- Table 5 shows cleaning conditions and evaluation results.
- the 2Q cleaning solution is used for the purpose of suppressing damage to the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- FIG. 1 shows a cleaning liquid (Table 4, cleaning liquid 2R) containing 5% by mass of ammonium acetate, 0.8% by mass of glycine, 0.18% by mass of ammonia, 3.6% by mass of dimethyl sulfoxide, and 90.42% by mass of water.
- the semiconductor element was cleaned.
- Table 5 shows cleaning conditions and evaluation results. Although this cleaning liquid can suppress damage to the material containing tungsten, the photoresist cannot be removed, and the Low-k film is damaged.
- the 2R cleaning liquid is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 24 (Invention described in Patent Document 16) The figure shows a cleaning solution (Table 4, cleaning solution 2S) containing 3.35% by mass of TMAH, 0.11% by mass of CyDTA, 1.64% by mass of hydrogen peroxide, 0.23% by mass of hexafluorosilicic acid, and 94.67% by mass of water.
- the semiconductor element shown in 1 was washed.
- Table 5 shows cleaning conditions and evaluation results. With this cleaning solution, the photoresist could not be removed, and the material containing tungsten and the low-k film were damaged.
- the 2S cleaning solution is used for the purpose of suppressing the damage of the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- Comparative Example 25 The semiconductor element shown in FIG. 1 was cleaned with a cleaning solution (Table 4, cleaning solution 2T) containing 1% by mass of KOH, 0.5% by mass of hexafluorosilicic acid, and 98.5% by mass of water. Table 5 shows cleaning conditions and evaluation results. Although this photoresist can remove the photoresist, the material containing tungsten and the low-k film were damaged. Therefore, the 2T cleaning solution is used for the purpose of suppressing the damage on the material containing tungsten and the low-k film and removing the photoresist on the surface of the object to be processed in the manufacturing process of the semiconductor device which is the subject of the present invention. It turns out that it is not possible (Table 5).
- KOH Potassium hydroxide NH 3 : Ammonia TMAH: Tetramethylammonium hydroxide TEA: Triethylamine Ba (NO 3 ) 2 : Barium nitrate Ba (OH) 2 : Barium hydroxide BaCl 2 : Barium chloride Ca (NO 3 ) 2 : Calcium nitrate SrCl 2 : Strontium chloride
- Removal state I Photoresist 3 removal state damage II: Tungsten material 1 damage damage III: Low-k film 2 damage
- TMAH Tetramethylammonium hydroxide
- DGME Diethylene glycol monomethyl ether Esocard O / 12; [Oleylbis (2-hydroxyethyl) methylammonium-bis (trifluoromethanesulfonyl) imide] (manufactured by Lion Corporation)
- DMSO dimethyl sulfoxide
- CyDTA trans-1,2-diaminocyclohexane-N, N, N ′, N′-tetraacetic acid monohydrate
- Removal state I Photoresist 3 removal state damage II: Tungsten material 1 damage damage III: Low-k film 2 damage
- the cleaning liquid and the cleaning method of the present invention it is possible to suppress damage to the tungsten-containing material and the low-k film in the semiconductor element manufacturing process, and to remove the photoresist on the surface of the object to be processed.
- a high-quality semiconductor element can be manufactured with a high yield, which is industrially useful.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
<1> 低誘電率膜(Low-k膜)と10原子%以上のタングステンを含む材料とを有する半導体素子の表面上のフォトレジストを除去する洗浄液であって、アルカリ土類金属化合物0.001~5質量%、無機アルカリおよび/または有機アルカリ0.1~30質量%、並びに水を含む、前記洗浄液である。
<2> 前記洗浄液のpH値が10~14である上記<1>に記載の洗浄液である。
<3> 前記10原子%以上のタングステンを含む材料が、酸化タングステン、窒化タングステン、タングステン、およびタングステンシリサイドからなる群より選択される少なくとも1種である上記<1>または<2>に記載の洗浄液である。
<4> 前記アルカリ土類金属化合物が、カルシウム化合物、ストロンチウム化合物、およびバリウム化合物からなる群より選択される少なくとも1種である上記<1>から<3>のいずれかに記載の洗浄液である。
<5> 前記無機アルカリが、水酸化リチウム、炭酸リチウム、炭酸水素リチウム、酢酸リチウム、水酸化ナトリウム、炭酸ナトリウム、炭酸水素ナトリウム、酢酸ナトリウム、水酸化カリウム、炭酸カリウム、炭酸水素カリウム、酢酸カリウム、水酸化セシウム、炭酸セシウム、炭酸水素セシウム、酢酸セシウム、およびアンモニアからなる群より選択される1種以上であり、
前記有機アルカリが、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム、コリン、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、プロピルアミン、ジプロピルアミン、ブチルアミン、ジブチルアミン、ペンチルアミン、へキシルアミン、ヘプチルアミン、オクチルアミン、エタノールアミン、2-メチルエタノールアミン、ジエタノールアミン、トリエタノールアミン、および1-アミノ-2-プロパノールからなる群より選択される1種以上である上記<1>から<4>のいずれかに記載の洗浄液である。
<6> 実質的に過酸化物、過塩素酸および過塩素酸塩を含まない上記<1>から<5>のいずれかに記載の洗浄液である。
<7> 低誘電率膜(Low-k膜)と10原子%以上のタングステンを含む材料とを有する半導体素子の表面上のフォトレジストを除去する洗浄方法であって、上記<1>から<6>のいずれかに記載の洗浄液を用いることを特徴とする洗浄方法である。
本発明において、タングステンの含有量は、X線光電子分光法(XPS)のイオンスパッタ法により、対象となるタングステンを含む材料のタングステン原子の構成比を測定することにより調べることができる。タングステンを含む材料の表面近傍は酸化されることで酸素原子の構成比が材料の内部よりも高くなる場合がある。そのため、タングステンと酸素の原子の構成比が一定となるまで、イオンスパッタによりタングステンを含む材料の表面をエッチングし、イオンスパッタにより露出したタングステンを含む材料の内部のタングステン原子の構成比を測定することができる。測定装置としては、完全自動XPS分析装置K-Alpha(サーモフィッシャーサイエンティフィック株式会社製)を用いることができる。
本発明者らは、洗浄液に含まれるアルカリ土類金属化合物が、タングステンを含む材料に対して防食効果を示すことを初めて見出した。そのメカニズムは明らかになっていないが、アルカリ土類金属化合物がタングステンの表面に吸着し、洗浄液に含まれるアルカリがタングステンを侵食するのを防いでいると考えられる。
これらの中でも、硝酸バリウム、水酸化バリウム、塩化バリウム、酢酸バリウム、酸化バリウム、臭化バリウム、炭酸バリウム、フッ化バリウム、ヨウ化バリウム、硫酸バリウム、リン酸バリウム、硝酸カルシウム、および塩化ストロンチウムが好ましい。
これらアルカリ土類金属化合物は、単独または2種類以上を組み合わせて配合できる。
これらの中でも、水酸化カリウムおよびアンモニアが好ましい。
一方、有機アルカリとして、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム、コリン、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、プロピルアミン、ジプロピルアミン、ブチルアミン、ジブチルアミン、ペンチルアミン、へキシルアミン、ヘプチルアミン、オクチルアミン、エタノールアミン、2-メチルエタノールアミン、ジエタノールアミン、トリエタノールアミン、1-アミノ-2-プロパノールなどが挙げられるが、これらに限定されるものではない。
これらの中でも、水酸化テトラメチルアンモニウムおよびトリエチルアミンが好ましい。
これらのアルカリは、単独または2種類以上を組み合わせて配合できる。
本発明の洗浄方法は、必要に応じて超音波を併用することができる。
本発明の洗浄液を使用する時間は0.1~120分であり、好ましくは1~60分の範囲であり、エッチングの条件や使用される半導体素子により適宜選択すればよい。
本発明の洗浄液を使用した後のリンス液としては、アルコールのような有機溶剤を使用することもできるが、水でリンスするだけでも十分である。
半導体素子の洗浄・除去処理前後の状況観察は以下のSEM(走査型電子顕微鏡)装置を用いて、100,000倍で観察した。
測定機器:株式会社日立ハイテクノロジーズ社製、超高分解能電界放出形走査電子顕微鏡SU9000
判定:
洗浄・除去後の判定はSEM観察後、以下の基準に従った。
I. フォトレジストの除去状態
E:フォトレジストが完全に除去された。
G:フォトレジストが概ね除去された。
P:フォトレジストの除去が不十分であった。
EとG判定を合格とした。
II. タングステンを含む材料のダメージ
E:洗浄前と比べてタングステンを含む材料に変化が見られなかった。
G:洗浄前と比べてタングステンを含む材料に僅かに変化が見られた。
P:タングステンを含む材料に形状の変化が見られた。
EとG判定を合格とした。
III. Low-k膜のダメージ
E:洗浄前と比べてLow-k膜に変化が見られなかった。
G:洗浄前と比べてLow-k膜に僅かに変化が見られた。
P:Low-k膜に形状の変化が見られた。
F:Low-k膜の形状に著しく変化が見られた。
EとG判定を合格とした。
試験には、図1に示したような断面の配線構造を有する半導体素子を使用し、洗浄効果を調べた。フォトレジスト3を除去するため、表1に記した洗浄液に表2に示した温度、時間で浸漬した。浸漬時は、洗浄液中で撹拌子を350rpmで回転させた。その後、超純水によるリンス、乾燥窒素ガス噴射による乾燥を行った。洗浄後の半導体素子をSEMで観察することにより、フォトレジスト3(図1)の除去状態とタングステンを含む材料1(図1)とLow-k膜2(図1)のダメージを判断した。試験に使用したタングステンを含む材料は酸化タングステンであり、30原子%のタングステンを含んでいた。
なお、タングステンの含有量は、上述した通り、X線光電子分光法(XPS)のイオンスパッタ法により測定した。いずれも測定装置としては、完全自動XPS分析装置K-Alpha(サーモフィッシャーサイエンティフィック株式会社製)を用いた。
実施例1~5で用いた洗浄液(表1、洗浄液1A~1D)において、硝酸バリウム(アルカリ土類金属化合物)を添加しない洗浄液(表3、洗浄液2A~2D)で図1に示した半導体素子を洗浄した。表5に洗浄条件と洗浄結果を示した。比較例1~5に示す洗浄液2A~2Dに硝酸バリウムを加えた洗浄液(表1、洗浄液1A~1D)と比べると、フォトレジスト3の除去性とLow-k膜2のダメージに差異はなかったが、タングステンを含む材料1にはいずれもダメージが見られた。よって、2A~2Dの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。また、これらと実施例6~10から、アルカリ土類金属化合物がフォトレジスト3の除去性を悪化させずにタングステンを含む材料1のダメージを抑制するのに有用であることがわかる。
水酸化カリウム0.005質量%、水酸化テトラメチルアンモニウム10質量%、ジエチレングリコールモノメチルエーテル50質量%、ピラゾール0.1質量%、および水38.895%質量%を含む洗浄液(表4、洗浄液2E)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液で50℃、20分間洗浄すると、フォトレジストを除去することはできるが、タングステンを含む材料と、Low-k膜の両材料にダメージを与えた(比較例6)。タングステンを含む材料とLow-k膜のダメージを抑制するため、浸漬時間を25℃、0.5分間と緩和すると、タングステンを含む材料にダメージを与えないが、フォトレジストを除去できず、Low-k膜にダメージを与えた(比較例7)。よって、2Eの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
ベンゾトリアゾール0.1質量%、1,2,4-トリアゾール0.1質量%、フッ化アンモニウム5質量%、ホウ酸1質量%、および水93.8質量%を含む洗浄液(表4、洗浄液2F)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Fの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
フッ化アンモニウム0.25質量%、グルコン酸0.06質量%、および水99.69質量%を含む洗浄液(表4、洗浄液2G)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Gの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
リン酸1.35質量%、塩酸1質量%、水酸化テトラメチルアンモニウム5質量%、ラウリルジアミノエチルグリシンナトリウム0.01質量%、および水92.64質量%を含む洗浄液(表4、洗浄液2H)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液で6分間洗浄すると、タングステンを含む材料にダメージを与えずに、フォトレジストを除去することはできるが、Low-k膜にダメージを与えた(比較例10)。Low-k膜のダメージを抑制するため、浸漬時間を4分間と短くすると、タングステンを含む材料にダメージを与えないが、フォトレジストを除去できず、Low-k膜にもダメージを与えた(比較例11)。よって、2Hの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
過酸化水素5質量%、アミノトリアゾール0.01質量%、および水94.99質量%を含む洗浄液(表4、洗浄液2I)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではLow-k膜のダメージを抑制することはできるが、フォトレジストを除去することはできず、タングステンを含む材料にダメージを与えた。よって、2Iの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
過酸化水素15質量%、水酸化ベンジルトリメチルアンモニウム0.2質量%、エソカードO/12[オレイルビス(2-ヒドロキシエチル)メチルアンモニウム-ビス(トリフルオロメタンスルホニル)イミド](ライオン株式会社製)0.001質量%、および水84.799質量%を含む洗浄液(表4、洗浄液2J)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではLow-k膜のダメージを抑制することはできるが、フォトレジストを除去することはできず、タングステンを含む材料にダメージを与えた。よって、2Jの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
オクチルアミン1.9質量%、ヒドロキシルアミン硫酸塩6質量%、水酸化テトラメチルアンモニウム4.9質量%、ギ酸2質量%、2-メチル-4-ペンタンジオール8質量%、および水77.2質量%を含む洗浄液(表4、洗浄液2K)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Kの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
N,N-ジエチルヒドロキシルアミン20質量%、ヒドロキシルアミン2質量%、ジメチルスルホキシド53質量%、カテコール10質量%、および水15質量%を含む洗浄液(表4、洗浄液2L)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液で50℃、1分間洗浄すると、タングステンを含む材料にダメージを与えずに、フォトレジストを除去することはできるが、Low-k膜にダメージを与えた(比較例15)。Low-k膜のダメージを抑制するため、浸漬時間を0.2分間にすると、タングステンを含む材料にダメージを与えないが、フォトレジストを除去できず、Low-k膜にもダメージを与えた(比較例16)。よって、2Lの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
水酸化テトラメチルアンモニウム10質量%、水酸化カリウム0.02質量%、2-フェニル-4-メチルイミダゾール2質量%、ジエチレングリコールモノメチルエーテル20質量%、および水67.98質量%を含む洗浄液(表4、洗浄液2M)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液で50℃、10分間洗浄すると、フォトレジストを除去することはできるが、タングステンを含む材料とLow-k膜にダメージを与えた(比較例17)。タングステンを含む材料とLow-k膜のダメージを抑制するため、浸漬温度を30℃に下げ、処理時間を1分と短くすると、タングステンを含む材料にダメージを与えないが、フォトレジストを除去できず、Low-k膜にダメージを与えた(比較例18)。よって、2Mの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
過酸化水素14質量%、フッ酸0.3質量%、ジエチレングリコールモノメチルエーテル58.4質量%、ビニルイミダゾール1質量%、および水26.3質量%を含む洗浄液(表4、洗浄液2N)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではフォトレジストを除去することはできず、タングステンを含む材料とLow-k膜にダメージを与えた。よって、2Nの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
フッ酸0.3質量%、ジエチレングリコールモノメチルエーテル60質量%、2-エチル-4-メチルイミダゾール1質量%、および水38.7質量%を含む洗浄液(表4、洗浄液2O)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Oの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
フッ酸0.1質量%、アミノプロピルトリメトキシシラン0.1質量%、ベンゾトリアゾール0.1質量%、エタノール1質量%、酢酸1質量%、および水97.7質量%を含む洗浄液(表4、洗浄液2P)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Pの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
ヒドロキシルアミン硫酸塩2質量%、水酸化テトラメチルアンモニウム3.4質量%、クエン酸2質量%、ソルビトール0.5質量%、および水92.1質量%を含む洗浄液(表4、洗浄液2Q)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではLow-k膜のダメージを抑制することはできるが、フォトレジストを除去することはできず、タングステンを含む材料にダメージを与えた。よって、2Qの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
酢酸アンモニウム5質量%、グリシン0.8質量%、アンモニア0.18質量%、ジメチルスルホキシド3.6質量%、および水90.42質量%を含む洗浄液(表4、洗浄液2R)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではタングステンを含む材料のダメージを抑制することはできるが、フォトレジストを除去することはできず、Low-k膜にダメージを与えた。よって、2Rの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
TMAH3.35質量%、CyDTA0.11質量%、過酸化水素1.64質量%、ヘキサフルオロケイ酸0.23質量%、および水94.67質量%を含む洗浄液(表4、洗浄液2S)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液ではフォトレジストを除去することはできず、タングステンを含む材料とLow-k膜にダメージを与えた。よって、2Sの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
KOH1質量%、ヘキサフルオロケイ酸0.5質量%、および水98.5質量%を含む洗浄液(表4、洗浄液2T)で図1に示した半導体素子を洗浄した。表5に洗浄条件と評価結果を示した。この洗浄液では、フォトレジストを除去することはできるが、タングステンを含む材料とLow-k膜にダメージを与えた。よって、2Tの洗浄液は、本発明の対象である半導体素子の製造工程において、タングステンを含む材料とLow-k膜のダメージを抑制し、被処理物の表面のフォトレジストを除去する目的には使用できないことがわかる(表5)。
NH3:アンモニア
TMAH:水酸化テトラメチルアンモニウム
TEA:トリエチルアミン
Ba(NO3)2:硝酸バリウム
Ba(OH)2:水酸化バリウム
BaCl2:塩化バリウム
Ca(NO3)2:硝酸カルシウム
SrCl2:塩化ストロンチウム
TMAH:水酸化テトラメチルアンモニウム
DGME:ジエチレングリコールモノメチルエーテル
エソカードO/12;[オレイルビス(2‐ヒドロキシエチル)メチルアンモニウム‐ビス(トリフルオロメタンスルホニル)イミド](ライオン株式会社製)
DMSO:ジメチルスルホキシド
CyDTA:trans-1,2-ジアミノシクロヘキサン-N,N,N‘,N’―四酢酸1水和物
2:層間絶縁膜(Low-k膜)
3:フォトレジスト
Claims (7)
- 低誘電率膜(Low-k膜)と10原子%以上のタングステンを含む材料とを有する半導体素子の表面上のフォトレジストを除去する洗浄液であって、アルカリ土類金属化合物0.001~5質量%、無機アルカリおよび/または有機アルカリ0.1~30質量%、並びに水を含む、前記洗浄液。
- 前記洗浄液のpH値が10~14である請求項1に記載の洗浄液。
- 前記10原子%以上のタングステンを含む材料が、酸化タングステン、窒化タングステン、タングステン、およびタングステンシリサイドからなる群より選択される少なくとも1種である請求項1または2に記載の洗浄液。
- 前記アルカリ土類金属化合物が、カルシウム化合物、ストロンチウム化合物、およびバリウム化合物からなる群より選択される少なくとも1種である請求項1から3のいずれかに記載の洗浄液。
- 前記無機アルカリが、水酸化リチウム、炭酸リチウム、炭酸水素リチウム、酢酸リチウム、水酸化ナトリウム、炭酸ナトリウム、炭酸水素ナトリウム、酢酸ナトリウム、水酸化カリウム、炭酸カリウム、炭酸水素カリウム、酢酸カリウム、水酸化セシウム、炭酸セシウム、炭酸水素セシウム、酢酸セシウム、およびアンモニアからなる群より選択される1種以上であり、
前記有機アルカリが、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム、コリン、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、プロピルアミン、ジプロピルアミン、ブチルアミン、ジブチルアミン、ペンチルアミン、へキシルアミン、ヘプチルアミン、オクチルアミン、エタノールアミン、2-メチルエタノールアミン、ジエタノールアミン、トリエタノールアミン、および1-アミノ-2-プロパノールからなる群より選択される1種以上である請求項1から4のいずれかに記載の洗浄液。 - 実質的に過酸化物、過塩素酸および過塩素酸塩を含まない請求項1から5のいずれかに記載の洗浄液。
- 低誘電率膜(Low-k膜)と10原子%以上のタングステンを含む材料とを有する半導体素子の表面上のフォトレジストを除去する洗浄方法であって、請求項1から6のいずれかに記載の洗浄液を用いることを特徴とする洗浄方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/505,654 US10651028B2 (en) | 2014-11-13 | 2015-10-02 | Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same |
CN201580055599.1A CN106796878B (zh) | 2014-11-13 | 2015-10-02 | 抑制了包含钨的材料的损伤的半导体元件的清洗液、及使用其的半导体元件的清洗方法 |
EP15858444.1A EP3193358B1 (en) | 2014-11-13 | 2015-10-02 | Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same |
JP2016558927A JP6555273B2 (ja) | 2014-11-13 | 2015-10-02 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
KR1020177008611A KR102405637B1 (ko) | 2014-11-13 | 2015-10-02 | 텅스텐을 포함하는 재료의 데미지를 억제한 반도체 소자의 세정액, 및 이것을 이용한 반도체 소자의 세정방법 |
IL252098A IL252098B (en) | 2014-11-13 | 2017-05-04 | A solution for cleaning semiconductor components that prevents damage to materials containing tungsten and a method for using it |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-230634 | 2014-11-13 | ||
JP2014230634 | 2014-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016076031A1 true WO2016076031A1 (ja) | 2016-05-19 |
Family
ID=55954124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/078075 WO2016076031A1 (ja) | 2014-11-13 | 2015-10-02 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10651028B2 (ja) |
EP (1) | EP3193358B1 (ja) |
JP (1) | JP6555273B2 (ja) |
KR (1) | KR102405637B1 (ja) |
CN (1) | CN106796878B (ja) |
IL (1) | IL252098B (ja) |
TW (1) | TWI678601B (ja) |
WO (1) | WO2016076031A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10947484B2 (en) | 2016-05-23 | 2021-03-16 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
CN113150878A (zh) * | 2021-03-25 | 2021-07-23 | 深圳市点石源水处理技术有限公司 | 一种ic载板去膜剂及其应用 |
US11208616B2 (en) | 2019-04-24 | 2021-12-28 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6713044B2 (ja) * | 2016-06-02 | 2020-06-24 | 富士フイルム株式会社 | 処理液、基板の洗浄方法及びレジストの除去方法 |
US11448966B2 (en) * | 2017-08-03 | 2022-09-20 | Huaying Research Co., Ltd | Photoresist-removing liquid and photoresist-removing method |
WO2019142788A1 (ja) * | 2018-01-16 | 2019-07-25 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
US11479744B2 (en) * | 2018-03-02 | 2022-10-25 | Mitsubishi Gas Chemical Company, Inc. | Composition having suppressed alumina damage and production method for semiconductor substrate using same |
KR102622751B1 (ko) * | 2018-07-13 | 2024-01-10 | 솔브레인 주식회사 | 마스크 세정용 조성물 및 이를 이용한 마스크 세정 방법 |
CN113150885B (zh) * | 2021-04-27 | 2022-11-01 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物 |
DE102022205390A1 (de) * | 2022-05-30 | 2023-11-30 | Henkel Ag & Co. Kgaa | Waschaktive Verbindungen |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005292288A (ja) * | 2004-03-31 | 2005-10-20 | Dongwoo Fine-Chem Co Ltd | レジスト剥離剤組成物 |
JP2008216843A (ja) * | 2007-03-07 | 2008-09-18 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離液組成物 |
JP2009516360A (ja) * | 2005-10-13 | 2009-04-16 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属適合フォトレジスト及び/又は犠牲反射防止コーティング除去組成物 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08334905A (ja) | 1995-06-08 | 1996-12-17 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JP2000311879A (ja) * | 1999-04-28 | 2000-11-07 | Mitsubishi Electric Corp | 洗浄液およびこれを用いた半導体装置の製造方法 |
JP2001026890A (ja) | 1999-07-09 | 2001-01-30 | Asahi Kagaku Kogyo Co Ltd | 金属の腐食防止剤及びこれを含む洗浄液組成物およびこれを用いる洗浄方法 |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
JP4138323B2 (ja) | 2002-01-30 | 2008-08-27 | 花王株式会社 | 剥離剤組成物 |
JP3955220B2 (ja) | 2002-03-05 | 2007-08-08 | 花王株式会社 | 洗浄方法 |
JP4122171B2 (ja) | 2002-04-22 | 2008-07-23 | Kisco株式会社 | レジスト残渣除去剤または半導体デバイスあるいは液晶デバイス製造プロセス用洗浄剤 |
KR100536593B1 (ko) * | 2002-12-05 | 2005-12-14 | 삼성전자주식회사 | 선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법 |
EP1692572A2 (en) | 2003-10-29 | 2006-08-23 | Mallinckrodt Baker, Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
US20050282093A1 (en) * | 2004-06-16 | 2005-12-22 | Dammel Ralph R | Aqueous edge bead remover |
GB0419804D0 (en) * | 2004-09-07 | 2004-10-13 | Electrocoin Leisure S Wales Lt | Amusement apparatus with feature game |
EP1700893B1 (en) * | 2005-03-09 | 2008-10-01 | JSR Corporation | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion |
KR100705416B1 (ko) * | 2005-06-15 | 2007-04-10 | 삼성전자주식회사 | 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 |
US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
JP4666515B2 (ja) | 2006-04-07 | 2011-04-06 | 花王株式会社 | 剥離剤組成物 |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
US7799139B2 (en) * | 2007-03-28 | 2010-09-21 | Intel Corporation | Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer |
JP5347237B2 (ja) | 2007-05-15 | 2013-11-20 | 三菱瓦斯化学株式会社 | 洗浄用組成物 |
JP5047712B2 (ja) | 2007-07-13 | 2012-10-10 | 東京応化工業株式会社 | 窒化チタン剥離液、及び窒化チタン被膜の剥離方法 |
JP2009069505A (ja) * | 2007-09-13 | 2009-04-02 | Tosoh Corp | レジスト除去用洗浄液及び洗浄方法 |
JP5379389B2 (ja) | 2008-03-05 | 2013-12-25 | 東京応化工業株式会社 | チタン除去液及びチタン被膜の除去方法 |
JP5498768B2 (ja) | 2009-12-02 | 2014-05-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
JP5508130B2 (ja) | 2010-05-14 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、半導体装置の製造方法及び洗浄方法 |
JP5508158B2 (ja) | 2010-06-22 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、洗浄方法、及び、半導体装置の製造方法 |
KR20120004810A (ko) * | 2010-07-07 | 2012-01-13 | 동우 화인켐 주식회사 | 포토레지스트 잔류물 제거용 조성물 및 이를 이용한 세정 방법 |
JP2013533631A (ja) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | エッチング後残渣を除去するための水性洗浄剤 |
JP5886946B2 (ja) * | 2011-06-01 | 2016-03-16 | アバンター・パフォーマンス・マテリアルズ・インコーポレイテッドAvantor Performance Materials, Inc. | 銅、タングステンおよび多孔質低κ誘電体に対する増強された相溶性を有する半水溶性ポリマー除去組成物 |
WO2013187313A1 (ja) | 2012-06-13 | 2013-12-19 | 三菱瓦斯化学株式会社 | 洗浄用液体組成物、半導体素子の洗浄方法、および半導体素子の製造方法 |
US10377978B2 (en) * | 2014-11-13 | 2019-08-13 | Mitsubishi Gas Chemical Company, Inc. | Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same |
CN107078043B (zh) * | 2014-11-13 | 2020-02-21 | 三菱瓦斯化学株式会社 | 抑制了包含钽的材料的损伤的半导体元件的清洗液、及使用其的清洗方法 |
-
2015
- 2015-10-02 JP JP2016558927A patent/JP6555273B2/ja active Active
- 2015-10-02 CN CN201580055599.1A patent/CN106796878B/zh active Active
- 2015-10-02 EP EP15858444.1A patent/EP3193358B1/en active Active
- 2015-10-02 WO PCT/JP2015/078075 patent/WO2016076031A1/ja active Application Filing
- 2015-10-02 US US15/505,654 patent/US10651028B2/en active Active
- 2015-10-02 KR KR1020177008611A patent/KR102405637B1/ko active IP Right Grant
- 2015-10-07 TW TW104132919A patent/TWI678601B/zh active
-
2017
- 2017-05-04 IL IL252098A patent/IL252098B/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005292288A (ja) * | 2004-03-31 | 2005-10-20 | Dongwoo Fine-Chem Co Ltd | レジスト剥離剤組成物 |
JP2009516360A (ja) * | 2005-10-13 | 2009-04-16 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属適合フォトレジスト及び/又は犠牲反射防止コーティング除去組成物 |
JP2008216843A (ja) * | 2007-03-07 | 2008-09-18 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離液組成物 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3193358A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10947484B2 (en) | 2016-05-23 | 2021-03-16 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
TWI787184B (zh) * | 2016-05-23 | 2022-12-21 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻或光阻殘餘物之剝離組成物及使用其之方法 |
US11208616B2 (en) | 2019-04-24 | 2021-12-28 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
CN113150878A (zh) * | 2021-03-25 | 2021-07-23 | 深圳市点石源水处理技术有限公司 | 一种ic载板去膜剂及其应用 |
Also Published As
Publication number | Publication date |
---|---|
KR102405637B1 (ko) | 2022-06-07 |
TW201624152A (zh) | 2016-07-01 |
IL252098A0 (en) | 2017-07-31 |
CN106796878A (zh) | 2017-05-31 |
EP3193358A4 (en) | 2018-05-02 |
JPWO2016076031A1 (ja) | 2017-08-24 |
EP3193358B1 (en) | 2021-03-31 |
US10651028B2 (en) | 2020-05-12 |
US20170278701A1 (en) | 2017-09-28 |
CN106796878B (zh) | 2021-02-09 |
TWI678601B (zh) | 2019-12-01 |
EP3193358A1 (en) | 2017-07-19 |
JP6555273B2 (ja) | 2019-08-07 |
IL252098B (en) | 2021-02-28 |
KR20170085483A (ko) | 2017-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6555273B2 (ja) | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 | |
JP6555274B2 (ja) | コバルトのダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 | |
JP6589883B2 (ja) | 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法 | |
JP6589882B2 (ja) | タンタルを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた洗浄方法 | |
JP6733476B2 (ja) | 半導体素子の洗浄用液体組成物、半導体素子の洗浄方法および半導体素子の製造方法 | |
JP6733475B2 (ja) | 半導体素子の洗浄用液体組成物および半導体素子の洗浄方法、並びに半導体素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15858444 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016558927 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15505654 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20177008611 Country of ref document: KR Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2015858444 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015858444 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 252098 Country of ref document: IL |
|
NENP | Non-entry into the national phase |
Ref country code: DE |