TWI408728B - 對於沈積於基板上光阻及/或抗反射犧牲材料進行後蝕刻移除之組成物及方法 - Google Patents
對於沈積於基板上光阻及/或抗反射犧牲材料進行後蝕刻移除之組成物及方法 Download PDFInfo
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- TWI408728B TWI408728B TW094106019A TW94106019A TWI408728B TW I408728 B TWI408728 B TW I408728B TW 094106019 A TW094106019 A TW 094106019A TW 94106019 A TW94106019 A TW 94106019A TW I408728 B TWI408728 B TW I408728B
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- Prior art keywords
- formula
- group
- triazole
- ether
- formulation
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 166
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000003667 anti-reflective effect Effects 0.000 title claims description 7
- 230000008569 process Effects 0.000 title abstract description 8
- 239000002585 base Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000004094 surface-active agent Substances 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims abstract description 17
- 239000006184 cosolvent Substances 0.000 claims abstract description 15
- 239000002738 chelating agent Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 117
- 239000007864 aqueous solution Substances 0.000 claims description 96
- 238000009472 formulation Methods 0.000 claims description 67
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- 238000004140 cleaning Methods 0.000 claims description 61
- -1 Polyoxyethylene Polymers 0.000 claims description 45
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 41
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 36
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 35
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 19
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 19
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 17
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 16
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 15
- 150000001412 amines Chemical class 0.000 claims description 14
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 claims description 13
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 12
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- 239000012964 benzotriazole Substances 0.000 claims description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims description 10
- 150000001340 alkali metals Chemical class 0.000 claims description 10
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 10
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 7
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 7
- 229920000151 polyglycol Polymers 0.000 claims description 7
- 239000010695 polyglycol Substances 0.000 claims description 7
- 150000003573 thiols Chemical class 0.000 claims description 7
- 150000003852 triazoles Chemical class 0.000 claims description 7
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 claims description 6
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical compound NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 claims description 6
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 6
- 229920002675 Polyoxyl Polymers 0.000 claims description 6
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 6
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 claims description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims description 6
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 5
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 5
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 5
- NKJOXAZJBOMXID-UHFFFAOYSA-N 1,1'-Oxybisoctane Chemical compound CCCCCCCCOCCCCCCCC NKJOXAZJBOMXID-UHFFFAOYSA-N 0.000 claims description 4
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 4
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 claims description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 4
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 4
- 235000010323 ascorbic acid Nutrition 0.000 claims description 4
- 229960005070 ascorbic acid Drugs 0.000 claims description 4
- 239000011668 ascorbic acid Substances 0.000 claims description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229940074391 gallic acid Drugs 0.000 claims description 4
- 235000004515 gallic acid Nutrition 0.000 claims description 4
- 229960003540 oxyquinoline Drugs 0.000 claims description 4
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 4
- 229960004889 salicylic acid Drugs 0.000 claims description 4
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 claims description 3
- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- NXRIDTLKJCKPOG-UHFFFAOYSA-N 1,4-dihydroimidazole-5-thione Chemical compound S=C1CN=CN1 NXRIDTLKJCKPOG-UHFFFAOYSA-N 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 3
- WEZPLQKRXDBPEP-UHFFFAOYSA-N 1-(1-propoxypropan-2-yloxy)propan-2-ol Chemical compound CCCOCC(C)OCC(C)O WEZPLQKRXDBPEP-UHFFFAOYSA-N 0.000 claims description 3
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 claims description 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims description 3
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 3
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 claims description 3
- SHLSSLVZXJBVHE-UHFFFAOYSA-N 3-sulfanylpropan-1-ol Chemical compound OCCCS SHLSSLVZXJBVHE-UHFFFAOYSA-N 0.000 claims description 3
- CLEJZSNZYFJMKD-UHFFFAOYSA-N 3h-1,3-oxazole-2-thione Chemical compound SC1=NC=CO1 CLEJZSNZYFJMKD-UHFFFAOYSA-N 0.000 claims description 3
- AGWWTUWTOBEQFE-UHFFFAOYSA-N 4-methyl-1h-1,2,4-triazole-5-thione Chemical compound CN1C=NN=C1S AGWWTUWTOBEQFE-UHFFFAOYSA-N 0.000 claims description 3
- YZTYEGCWRPJWEE-UHFFFAOYSA-N 5-(benzotriazol-2-yl)pentan-1-amine Chemical compound C1=CC=CC2=NN(CCCCCN)N=C21 YZTYEGCWRPJWEE-UHFFFAOYSA-N 0.000 claims description 3
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 3
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 claims description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims description 3
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 claims description 3
- 229930024421 Adenine Natural products 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- CWRVKFFCRWGWCS-UHFFFAOYSA-N Pentrazole Chemical compound C1CCCCC2=NN=NN21 CWRVKFFCRWGWCS-UHFFFAOYSA-N 0.000 claims description 3
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 claims description 3
- 229960000643 adenine Drugs 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 3
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 3
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 229960005152 pentetrazol Drugs 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 claims description 3
- 229940124530 sulfonamide Drugs 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- 229940035024 thioglycerol Drugs 0.000 claims description 3
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 2
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 2
- HCEKEODXLSQFDV-UHFFFAOYSA-N 5-methyltriazol-1-amine Chemical compound CC1=CN=NN1N HCEKEODXLSQFDV-UHFFFAOYSA-N 0.000 claims description 2
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 claims description 2
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical compound CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 claims description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 2
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 claims description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims 4
- 235000011187 glycerol Nutrition 0.000 claims 4
- NMILGIZTAZXMTM-UHFFFAOYSA-N 4-propylmorpholine Chemical compound CCCN1CCOCC1 NMILGIZTAZXMTM-UHFFFAOYSA-N 0.000 claims 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims 2
- XNSPQPOQXWCGKC-UHFFFAOYSA-N C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] XNSPQPOQXWCGKC-UHFFFAOYSA-N 0.000 claims 2
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 claims 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 150000002334 glycols Chemical class 0.000 claims 2
- FJNLCHNQVJVCPY-UHFFFAOYSA-N 2-n-methoxy-2-n-methyl-4-n,6-n-dipropyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCCNC1=NC(NCCC)=NC(N(C)OC)=N1 FJNLCHNQVJVCPY-UHFFFAOYSA-N 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- GXSCFXCADMTKTM-UHFFFAOYSA-N N,N-dimethylmethanamine phenylmethanol Chemical compound CN(C)C.OCC1=CC=CC=C1 GXSCFXCADMTKTM-UHFFFAOYSA-N 0.000 claims 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- ZRALSGWEFCBTJO-UHFFFAOYSA-N anhydrous guanidine Natural products NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims 1
- 125000000732 arylene group Chemical group 0.000 claims 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 125000000879 imine group Chemical group 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 229960003742 phenol Drugs 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 14
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 35
- 229930004069 diterpene Natural products 0.000 description 18
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- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 8
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- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- JKTAIYGNOFSMCE-UHFFFAOYSA-N 2,3-di(nonyl)phenol Chemical compound CCCCCCCCCC1=CC=CC(O)=C1CCCCCCCCC JKTAIYGNOFSMCE-UHFFFAOYSA-N 0.000 description 1
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 1
- CAWGQUPKYLTTNX-UHFFFAOYSA-N 3,4,5,6-tetrahydro-2,7-benzodioxecine-1,8-dione Chemical compound O=C1OCCCCOC(=O)C2=CC=CC=C12 CAWGQUPKYLTTNX-UHFFFAOYSA-N 0.000 description 1
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 description 1
- OURXRFYZEOUCRM-UHFFFAOYSA-N 4-hydroxymorpholine Chemical compound ON1CCOCC1 OURXRFYZEOUCRM-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- OQXPLXQHKFSMJC-UHFFFAOYSA-N 5-(9H-fluoren-1-yl)-1H-1,2,4-triazol-3-amine Chemical compound NC1=NNC(=N1)C1=CC=CC=2C3=CC=CC=C3CC1=2 OQXPLXQHKFSMJC-UHFFFAOYSA-N 0.000 description 1
- SHVCSCWHWMSGTE-UHFFFAOYSA-N 6-methyluracil Chemical compound CC1=CC(=O)NC(=O)N1 SHVCSCWHWMSGTE-UHFFFAOYSA-N 0.000 description 1
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- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- FAFGTINTFWXDRM-UHFFFAOYSA-N [N]1C2=CC=C1C=C(N1)C=C(CCC)C1=CC([N]1)=CC=C1C=C(N1)C=CC1=C2 Chemical compound [N]1C2=CC=C1C=C(N1)C=C(CCC)C1=CC([N]1)=CC=C1C=C(N1)C=CC1=C2 FAFGTINTFWXDRM-UHFFFAOYSA-N 0.000 description 1
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- 239000002671 adjuvant Substances 0.000 description 1
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- 239000003963 antioxidant agent Substances 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229940111121 antirheumatic drug quinolines Drugs 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229940075419 choline hydroxide Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- ZKKLPDLKUGTPME-UHFFFAOYSA-N diazanium;bis(sulfanylidene)molybdenum;sulfanide Chemical compound [NH4+].[NH4+].[SH-].[SH-].S=[Mo]=S ZKKLPDLKUGTPME-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229940085942 formulation r Drugs 0.000 description 1
- 229960005150 glycerol Drugs 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000005414 inactive ingredient Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K31/00—Medicinal preparations containing organic active ingredients
- A61K31/33—Heterocyclic compounds
- A61K31/395—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins
- A61K31/435—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with one nitrogen as the only ring hetero atom
- A61K31/44—Non condensed pyridines; Hydrogenated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C11D2111/22—
Description
本發明係關於一種有用於自其上沈積有後蝕刻光阻及/或抗反射犧牲塗層材料之基板或物件將此等材料移除之組成物及方法。
目前所發展的半導體積體需要(i)使用抗反射塗層,(ii)使由蝕刻/灰化所引起之對低k介電材料的損壞減至最小,(iii)使介電/蝕刻止停互連層之有效k值減至最小,及(iv)就容許條件及積體技術之變化而言的寬廣製程範圍。
前述之需求可藉由使用蝕刻操作不利用灰化,使用採用抗反射犧牲塗層之介電圖案化製程,結合於單一製程步驟中將後蝕刻光阻及SARC移除之液體清潔化學而解決。
目前使用於半導體製造中之微影(photolithography)製程需要在光阻層下方使用UV/吸光塗層,以防止步進機(stepper)UV光反射。若無此塗層,則會有顯著量的光被自下方基板反射開。此等反射光依序會在微影製程中產生瑕疵,諸如由建設性及破壞性干涉所造成之光阻缺口,不均勻的照相速度,產生總體微影圖案瑕疵,損失臨界尺寸標註(dimensioning)能力等等。
存在數種於微影製程中達到高UV光吸光率之方法,包括使用雙層及三層光阻,使用底部抗反射塗層(BARC)及抗反射犧牲塗層(SARC)。所有此等方法皆將UV發色基加入至吸收入射光的旋塗(spin-on)聚合物基質中。所有此等抗反射塗層亦皆於典型雙重鑲嵌(dual damascene)積體中所遭遇到的拓撲(topological)晶圓表面上具有平面化作用。
然而,當將以SiOC為主之介電材料使用於半導體積體中時,使用SARC具有兩項超越前述其他方法之重要優點。
首先,由於SARC材料係以原矽酸四乙酯(TEOS)為主,因而其可以與以SiOC為主之介電材料類似的方式及以類似的速率蝕刻。如此可獲致相當高的蝕刻均勻度及蝕刻控制性,以致不需要溝渠蝕刻止停層,且可相對於前述之另類方法使通道蝕刻止停層之厚度減小直至50%。
其次,由於經蝕刻之SARC於蝕刻之後相對於有機質的光阻及BARC並不會顯著地提高其之交聯度,因而經蝕刻之SARC可利用液體清潔劑/蝕刻劑組成物移除。
當將清潔劑/蝕刻劑組成物使用於後段製程(BEOL)應用以處理由低電容(低k)絕緣材料或介電質所分離之鋁或銅互連線時,用於移除光阻殘留物及SARC之組成物應具有良好的金屬相容性,例如,於銅、鋁、鈷等等上之低蝕刻速率。
未經處理之光阻於強鹼性水溶液以及選定有機溶劑之溶液中具有溶解度。然而,經暴露至氣相電漿蝕刻(諸如典型上用於蝕刻介電材料者)之光阻將於材料表面產生硬化外皮。硬化外皮包括交聯有機聚合物,且可包含少量的矽或金屬原子。使用於雙重鑲嵌製程中之氟基電漿蝕刻會將氟原子沈積於光阻外皮中,此會使其之溶解度減小及提高其對化學移除之抵抗力。
光阻及外皮可藉由氣相灰化移除,其中使基板暴露至氧化或還原電漿蝕刻,但此等電漿灰化技術會對介電質(尤其係多孔性的有機矽酸酯或有機低k材料)造成損傷,而導致k值之不可接受的增加。所製造之結構的半導體特徵可能包含對於最終產物晶片之操作重要的金屬,諸如銅、鋁及鈷合金。
技藝中已將羥胺溶液利用於光阻移除,但此等溶液具有相關的腐蝕、毒性及反應性問題,而限制其用途,其中當將銅使用於積體電路中時,不利的腐蝕作用尤其成為問題。
本發明之一態樣係關於一種有用於自其上具有光阻及/或抗反射犧牲塗層(SARC)材料之基板將此等材料移除之清潔組成物。此組成物包括選自由下列所組成之群之活性清潔組合(ACC):(a)第四銨鹼結合鹼金屬及鹼土金屬鹼之至少一者;及(b)強鹼結合氧化劑。
本發明之另一態樣係關於一種自其上具有光阻及/或SARC材料之基板移除該材料之方法,該方法包括使基板與清潔組成物接觸足夠的時間,以自基板至少部分移除該材料,其中清潔組成物包括選自由下列所組成之群之活性清潔組合(ACC):(a)第四銨鹼結合鹼金屬及鹼土金屬鹼之至少一者;及(b)強鹼結合氧化劑。
本發明之其他態樣、特徵及優點將可由隨後之揭示內容及隨附之申請專利範圍而更加明白。
本發明涵蓋有用於自其上具有光阻及/或抗反射犧牲塗層(SARC)材料之基板將此等材料移除之清潔組成物。
此組成物包括選自由下列所組成之群之活性清潔組合(ACC):(a)第四銨鹼結合鹼金屬及鹼土金屬鹼之至少一者;及(b)強鹼結合氧化劑。
本發明之組成物可以如更完整說明於後文之相當多樣的特定配方而具體化。
在所有此等組成物中(其中參照包括零下限之重量百分比範圍論述組成物之特定成分),當明瞭在組成物之各種特定具體例中可存在或不存在此等成分,且在存在此等成分之情況中,其可以基於其中使用此等成分之組成物總重量計低至0.01重量百分比之濃度存在。
本發明之一態樣係關於一種有用於移除SARC及光阻之清潔組成物,其包括下列成分:0.1-40.0重量%之有機第四銨鹼0.01-5重量%之鹼金屬或鹼土金屬鹼0-80重量%之溶劑及/或胺0-5重量%之表面活性劑0-10重量%之鉗合劑/鈍化劑0-98重量%之水其中成分之百分比係以組成物之總重量計之重量百分比,且其中組成物之此等成分之重量百分比的總和不超過100重量%。
此組成物視需要可包括額外的成分,包括活性以及非活性成分,例如,安定劑、分散劑、抗氧化劑、滲透劑、佐劑、添加劑、填料、賦形劑等等。
在不同的具體例中,組成物可變化地包含前述之有機第四銨鹼、鹼金屬或鹼土金屬鹼、溶劑及/或胺、表面活性劑、鉗合劑/鈍化劑、及水成分,由其所組成,或基本上由其所組成。
在一特定具體例中,清潔組成物包括以下成分:2-15重量%之有機第四銨鹼~0.01-2重量%之鹼金屬或鹼土金屬鹼0-50重量%之溶劑及/或胺~0.01-2重量%之表面活性劑0-5重量%之鉗合劑/鈍化劑40-95重量%之水其中成分之百分比係以組成物之總重量計之重量百分比,且其中組成物之此等成分之重量百分比的總和不超過100重量%。
在不同的較佳具體例中,清潔組成物係以下列的配方A-G調配,其中所有百分比係以配方總重量計之重量%:配方A
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀3.0% 4-甲基嗎啉N-氧化物0.30%聚氧伸乙基(150)二壬苯基醚0.08% 2-巰基苯并咪唑91.0%水配方B
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀3.0% 4-甲基嗎啉N-氧化物0.30%聚氧伸乙基(150)二壬苯基醚0.20% 5-胺基-1, 3, 4-噻二唑-2-硫醇90.86%水配方C
3.60%氫氧化苄基三甲基銨0.27%氫氧化鉀3.5% 4-甲基嗎啉N-氧化物15.0% 4-(3-胺丙基)嗎啉0.30%聚氧伸乙基(150)二壬苯基醚0.08% 2-巰基苯并咪唑77.25%水配方D
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀20.0%二甲亞碸0.08% 2-巰基苯并咪唑74.28%水配方E
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀10.0%四亞甲碸0.30%環氧乙烷、甲基、具有環氧乙烷之聚合物、具2, 2’-(氧化亞胺基)雙(乙醇)(2:1)之醚、N(-3(C(-11-異烷氧基)丙基)衍生物,富含C1 0
(C1 0
-rich)0.08% 2-巰基苯并咪唑83.98%水配方F
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀10.0%二(乙二醇)丁基醚10.0% 2-(2-二甲胺基)乙氧基)乙醇0.30%環氧乙烷、甲基、具有環氧乙烷之聚合物、具2, 2’-(氧化亞胺基)雙(乙醇)(2:1)之醚、N(-3(C(-11-異烷氧基)丙基)衍生物,富含C1 0
74.06%水配方G
5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀10.0%四亞甲碸10.0%二(乙二醇)丁基醚0.10%環氧乙烷、甲基、具有環氧乙烷之聚合物、單(辛苯基)醚0.08% 2-巰基苯并咪唑74.18%水在另一態樣中,本發明係關於一種有用於自半導體基板剝除光阻及/或光阻殘留物及/或SARC,同時仍維持鈷及銅相容性之清潔組成物。此種清潔組成物包括至少一氧化劑、強鹼、視需要之鉗合劑及視需要之共溶劑及/或表面活性劑之水溶液。此清潔組成物有效地自半導體裝置之頂端移除光阻,而不對介電材料造成損傷,且不會導致下方金屬的腐蝕。
其中之鹼成分包括氫氧化鉀之類型的組成物尤其有利於獲致高效率的清潔,而不會對介電層有不利影響。
在一具體例中,此種類型之組成物包括以組成物總重量計之下列重量%的成分:0.1-30重量%之強鹼0.01-30重量%之氧化劑0-10重量%之鉗合劑0-5重量%之表面活性劑0-50重量%之共溶劑20-98.9重量%之去離子水本文所使用之術語「強鹼」係指於水溶液或部分水溶液中解離產生實質化學計量之量之氫氧根陰離子的陽離子/陰離子鹽。強鹼可包括諸如氫氧化鉀及氫氧化烷基銨諸如氫氧化四甲銨(TMAH)、氫氧化膽鹼、氫氧化苄基三甲基銨等等之鹼。
在一具體例中,本發明之組成物不含羥胺。
此種組成物中之氧化劑可包括,但不限於,無機及/或有機氧化劑,諸如過氧化氫、有機過氧化物、胺-N-氧化物、過硼酸鹽、過硫酸鹽、以及前述成分之兩者或以上的組合。
此種組成物中之鉗合劑可為任何適當類型,且可包括,但不限於,三唑,諸如1, 2, 4-三唑、或經諸如下列之取代基取代之三唑:C1-C8烷基、胺基、硫醇、巰基、亞胺基、羧基及硝基,諸如苯并三唑、甲苯三唑、5-苯基苯并三唑、5-硝基苯并三唑、3-胺基-5-巰基-1, 2, 4-三唑、1-胺基-1, 2, 4-三唑、羥基苯并三唑、2-(5-胺戊基)苯并三唑、1-胺基-1, 2, 3-三唑、1-胺基-5-甲基-1, 2, 3-三唑、3-胺基-1, 2, 4-三唑、3-巰基-1, 2, 4-三唑、3-異丙基-1, 2, 4-三唑、5-苯基硫醇-苯并三唑、鹵基苯并三唑(鹵基=F、Cl、Br或I)、萘并三唑等等、以及噻唑、四唑、咪唑、磷酸酯、硫醇及諸如2-巰基苯并咪唑、2-巰基苯并噻唑、4-甲基-2-苯基咪唑、2-巰基噻唑啉、5-胺基四唑、5-胺基-1, 3, 4-噻二唑-2-硫醇、2, 4-二胺基-6-甲基-1, 3, 5-三、噻唑、三、甲基四唑、1, 3-二甲基-2-咪唑啶酮、1, 5-五亞甲基四唑、1-苯基-5-巰基四唑、二胺甲基三、巰基苯并噻唑、咪唑啉硫酮、巰基苯并咪唑、4-甲基-4H-1, 2, 4-三唑-3-硫醇、5-胺基-1, 3, 4-噻二唑-2-硫醇、苯并噻唑、磷酸三甲苯酯、吲唑等等。適當的鉗合劑物種進一步包括甘油、胺基酸、羧酸、醇、醯胺及喹啉諸如鳥嘌呤、腺嘌呤、甘油、硫基甘油、氮基三乙酸、柳醯胺、亞胺二乙酸、苯并鳥糞胺、三聚氰胺、硫基三聚氰酸、鄰胺苯甲酸、五倍子酸、抗壞血酸、水楊酸、8-羥喹啉、5-羧酸-苯并三唑、3-巰基丙醇、硼酸、亞胺基二乙酸等等。鉗合劑可有用於提高組成物與使用於半導體裝置中之金屬及介電材料之相容性。
使用於組成物中之表面活性劑可為任何適當類型,例如,非離子表面活性劑諸如氟烷基表面活性劑、聚乙二醇、聚丙二醇、聚乙二醇或聚丙二醇醚、羧酸鹽、十二烷基苯磺酸或其鹽、聚丙烯酸酯聚合物、二壬苯基聚氧伸乙基、或其他經取代之苯基聚氧伸乙基、聚矽氧或經改質之聚矽氧聚合物、乙炔二醇或經改質之乙炔二醇、烷基銨或經改質之烷基銨鹽、以及前述成分之兩者或以上的組合。
供此種組成物用之適當的共溶劑種類包括,但不限於,胺諸如二甲基二甘醇胺、1, 8-二吖雙環[5. 4. 0]十一烯、胺丙基嗎啉、三乙醇胺、甲基乙醇胺、甲基二乙醇胺等等,或二醇諸如乙二醇或聚乙二醇、丙二醇、新戊二醇等等,胺諸如羥乙基嗎啉、胺丙基嗎啉等等或二醇醚諸如二(乙二醇)單乙醚、二(丙二醇)丙基醚、乙二醇苯基醚、二(丙二醇)丁基醚、丁基卡必醇等等,或聚二醇醚。
此種組成物之特定具體例記述為以下的配方H-S,其中所有百分比係以組成物總重量計之重量%。
配方H
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 3-胺基-5-巰基-1, 2, 4-三唑 0.1%水 73.9%配方I
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3%四硫基鉬酸銨 0.1%水 73.9%配方J
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺丙基嗎啉 20.0%水 53.9%配方K
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1% N-乙基嗎啉 20.0%水 53.9%配方L
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺乙基六氫吡啶 20.0%水 53.9%配方M
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 3-胺基-5-巰基-1, 2, 4-三唑 0.1%胺丙基嗎啉 20.0%水 53.9%配方N
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 3-胺基-5-巰基-1, 2, 4-三唑 0.1%胺丙基嗎啉 10.0%水 63.9%配方O
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺丙基嗎啉 20.0%水 53.9%配方P
氫氧化四甲銨,25%水溶液 14.7% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺丙基嗎啉 10.0%水 63.9%配方Q
氫氧化苄基三甲銨,40%水溶液 9.0%氫氧化鉀,45%水溶液 0.6% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3%2-巰基苯并咪唑 0.1%胺丙基嗎啉 20.0%水 59.02%配方R
氫氧化苄基三甲銨,40%水溶液 9.0%氫氧化鉀,45%水溶液 0.6% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺丙基嗎啉 15.0%水 64.02%配方S
氫氧化苄基三甲銨,40%水溶液 9.0%氫氧化鉀,45%水溶液 0.6% N-甲基嗎啉氧化物,50%水溶液 7.0%二壬酚聚氧伸乙基,7%水溶液 4.3% 2-巰基苯并咪唑 0.1%胺丙基嗎啉 10.0%水 69.02%在另一態樣中,本發明涵蓋包含以組成物總重量計之下列重量%之成分的清潔組成物:0.1-30重量%之強鹼2-30重量%之氧化劑0-10重量%之鉗合劑0-5重量%之表面活性劑0-50重量%之共溶劑20-98重量%之去離子水此種組成物中之強鹼、氧化劑、鉗合劑、共溶劑及表面活性劑種類可為與前文所說明論述者相同或相關的種類。
此種組成物之特定具體例記述為以下的配方T、U、V、W、X、Y、Z、A2
、B2
、C2
、D2
、E2
、F2
、G2
、H2
、I2
、J2
、K2
及L2
,其中所有百分比係以組成物總重量計之重量%。
配方T
氫氧化苄基三甲銨,40%水溶液 13.4% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 78.62%配方U
氫氧化苄基三甲銨,40%水溶液 13.4% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 1.2% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 78.02%配方V
氫氧化四甲銨,25%水溶液 5.85% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 1.2% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 85.57%配方W
氫氧化四甲銨,25%水溶液 2.93% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 1.2% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 88.49%配方X
氫氧化苄基三甲銨,40%水溶液 7.2% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 84.82%配方Y
氫氧化苄基三甲銨,40%水溶液 3.6% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 1.2% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 87.82%配方Z
氫氧化苄基三甲銨,40%水溶液 3.6% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 88.42%配方A2
氫氧化苄基三甲銨,40%水溶液 7.2% N-甲基嗎啉氧化物,50%水溶液 7.0%氫氧化鉀,45%水溶液 0.3% 2-巰基苯并咪唑 0.08%二壬酚聚氧伸乙基 0.3%水 85.12%配方B2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69%3-胺基-5-巰基-1, 2, 4-三唑 1.0%水 72.04%配方C2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69% 4-甲基-2-苯基咪唑 1.0%水 72.04%配方D2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69% 2-巰基噻唑啉 1.0%水 72.04%配方E2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69% 8-羥基喹啉 1.0%水 72.04%配方F2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69% 1-苯基-2-四唑啉-5-硫酮 1.0%水 72.04%配方G2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69%五倍子酸 1.0%水 72.04%配方H2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69%水楊酸 1.0%水 72.04%配方I2
氫氧化苄基三甲銨,40%水溶液 22.26%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%甲基二乙醇胺 2.33%磷酸(86%) 1.69%抗壞血酸 1.0%水 72.04%配方J2
氫氧化苄基三甲銨,40%水溶液 7.2%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%胺丙基嗎啉 10% 4-甲基-2-苯基咪唑 1.0%水 81.12%配方K2
氫氧化苄基三甲銨,40%水溶液 7.2%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%胺丙基嗎啉 10% 4-甲基-2-苯基咪唑 0.5%水 81.62%配方L2
氫氧化苄基三甲銨,40%水溶液 7.2%氫氧化鉀,45%水溶液 0.6% 2-巰基苯并咪唑 0.08%胺丙基嗎啉 10% 4-甲基-2-苯基咪唑 1.0%水 81.02%二壬酚聚氧伸乙基 0.1%適用於自半導體基板剝除光阻及/或光阻殘留物,同時可維持鈷及銅相容性之在本發明之廣義範圍內之又其他的配方包括其之組成物記述如下之配方M2
、N2
、O2
、P2
、Q2
及R2
。
配方M2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0%5-胺基四唑 0.1%水 93.9%配方N2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0% 2, 4-二胺基-6-甲基-1, 3, 5-三0.1%水 93.9%配方O2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0% 5-胺基-1, 3, 4-噻二唑-2-硫醇 0.1%水 93.9%配方P2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0% 1, 2, 4-三唑 0.1%水 93.9%配方Q2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0% 2, 4-二羥基-6-甲基嘧啶 0.1%水 93.9%配方R2
氫氧化四甲銨,25%水溶液 4.0%過氧化氫,30%水溶液 2.0% 8-羥基喹啉 0.1%水 93.9%本發明之清潔組成物係經由簡單地添加各別成分及混合至均勻狀態而容易地調配得。
在清潔應用中,清潔組成物係以任何適當的方式塗布至待清潔之材料,例如,經由將清潔組成物噴塗於待清潔材料之表面上,經由將材料或包括待清潔材料之物件浸泡(於清潔組成物之體積中),經由使待清潔之材料或物件與經清潔組成物飽和之另一材料(例如,墊、或纖維吸收性塗布器元件)接觸,或藉由任何其他藉以使清潔組成物與待清潔材料進行清潔接觸之適當的手段、方式或技術。
當應用至半導體製造操作時,本發明之清潔組成物有用於自其上經沈積光阻及/或SARC材料之基板及半導體裝置結構移除此等材料。
本發明之組成物藉由其對於此等光阻及/或SARC材料相對於可能存在於半導體基板上且暴露至清潔組成物之其他材料(諸如ILD結構、金屬化、障壁層等等)之選擇性,而以高度有效率的方式達成光阻及/或SARC材料之移除。
在使用本發明之組成物於自其上具有光阻及/或SARC材料之半導體基板將其移除時,典型上使清潔組成物在自約50℃至約80℃範圍內之溫度下與基板接觸自約10至約45分鐘之時間。此種接觸時間及溫度係為說明性,在本發明之廣泛實施中,可使用任何其他可有效地自基板至少部分移除光阻及/或SARC材料之適當的時間及溫度條件。
於達成期望的清潔作用後,如在本發明組成物之指定的最終應用中所期望及有效,清潔組成物可例如,藉由沖洗、洗滌、或其他移除步驟,而輕易地自其先前經塗布之基板或物件移除。
本發明之特徵及優點由以下的非限制性實施例作更完整地說明,其中除非特意說明,否則所有份數及百分比係以重量計。
製備具有以上說明之各別組成物之配方A、B、C、D、E、F及G的樣品。
於使特定配方之清潔組成物與基板於60-70℃下接觸6-15分鐘,隨後以去離子水沖洗基板之相關試驗中評估此等配方對於自包含經塗布於其上之光阻及SARC之基板將其移除,同時對此等基板上之銅金屬化維持低蝕刻作用之效力。基板係包含圖案化有機矽酸酯介電質及在圖案化光阻下方之SARC結構之矽晶圓上之後蝕刻結構。光阻係標準市售之供193或248奈米微影術用之化學放大光阻。SARC材料係由市售之加入在微影術所使用之頻率下強烈吸光之染料物質之旋塗聚矽氧烷材料層所組成。
於此等接觸及沖洗步驟之後,測定光阻之移除百分比、SARC之移除百分比、及以埃每分鐘(/min)為單位之銅蝕刻速率。將相關的數據記述於下表1。
製備具有以上說明之各別組成物之配方H、I、J、K、L、M、N、O、P、Q、R及S的樣品。
於使特定配方之清潔組成物與基板於60-70℃下接觸,隨後以去離子水沖洗基板之相關試驗中評估此等配方對於自其上具有光阻、銅及鈷金屬之半導體基板將光阻殘留物移除,同時對此等基板上之銅及鈷維持低蝕刻作用之效力。基板係包含圖案化有機矽酸酯介電質及在圖案化光阻下方之SARC結構之矽晶圓上之後蝕刻結構。光阻係標準市售之供193或248奈米微影術用之化學放大光阻。將實質清潔定義為如利用光學顯微術測得大於80%之自半導體裝置之光阻的移除。
將數據記述於下表2。
製備具有以上說明之各別組成物之配方T、U、V、W、X、Y、Z、A2
、B2
、C2
、D2
、E2
、F2
、G2
、H2
、I2
、J2
、K2
及L2
的樣品。
於使特定配方之清潔組成物與基板於70℃下接觸12分鐘,隨後以去離子水沖洗基板之相關試驗中評估此等配方對於自其上具有光阻之半導體基板將光阻殘留物移除之效力。基板係包含圖案化有機矽酸酯介電質及在圖案化光阻下方之SARC結構之矽晶圓上之後蝕刻結構。光阻係標準市售之供193或248奈米微影術用之化學放大光阻。將實質清潔定義為如利用光學顯微術測得大於80%之自半導體裝置之光阻的移除。
將結果記述於下表3和4。
製備具有以上說明之各別組成物之配方M2
、N2
、O2
、P2
、Q2
及R2
的樣品。
於使特定配方之清潔組成物與基板於70℃下接觸,隨後以去離子水沖洗基板之相關試驗中評估此等配方對於自其上具有光阻、銅及鈷金屬之半導體基板將光阻殘留物移除,同時對此等基板上之銅及鈷維持低蝕刻作用之效力。基板係包含圖案化有機矽酸酯介電質及在圖案化光阻下方之SARC結構之矽晶圓上之後蝕刻結構。光阻係標準市售之供193或248奈米微影術用之化學放大光阻。將實質清潔定義為如利用光學顯微術測得大於80%之自半導體裝置之光阻的移除。
將數據記述於下表5。
先前之實施例顯示本發明之清潔組成物有用於自其上經塗布光阻及/或SARC之半導體基板將該等材料移除。此外,可使用此等組成物,而不會對基板上之金屬化(例如,銅、鋁及鈷合金)有不利影響。
此外,本發明之清潔組成物可利用適當的溶劑系統(例如,水性及半水性溶劑系統)容易地調配得,而賦予此等組成物低毒性及低可燃特性。
因此,本發明之清潔組成物於製造積體電路裝置之移除光阻及/或SARC材料之技術中獲致實質的進步。
雖然本發明已參照說明具體例及特徵以不同方式揭示於文中,但當明瞭說明於上文之具體例及特徵並非要限制本發明,且熟悉技藝人士基於文中之揭示內容當可明白其他的變化、修改及其他具體例。因此,應將本發明廣義地解釋為涵蓋在記述於後文之申請專利範圍之精神及範圍內之所有此等變化、修改及另類具體例。
Claims (24)
- 一種清潔組成物,該組成物包括選自由下列所組成之群之活性清潔組合(ACC):(a)第四銨鹼結合鹼金屬及鹼土金屬鹼之至少一者;及(b)強鹼結合氧化劑,其中該氧化劑包含選自由胺-N-氧化物、過硼酸鹽、過硫酸鹽及前述成分之兩者或以上之組合所組成之群之氧化劑種類,及其中該清潔組成物係有助於自其上具有光阻及/或抗反射犧牲塗層(SARC)材料之基板將此等材料移除。
- 如申請專利範圍第1項之清潔組成物,其中不含羥胺。
- 如申請專利範圍第1項之清潔組成物,其包含成分(a)及以下成分:0.1-40.0重量%之有機第四銨鹼;0.01-5重量%之鹼金屬或鹼土金屬鹼;0-80重量%之溶劑及/或胺;0-5重量%之表面活性劑;0-10重量%之鉗合劑/鈍化劑;及0-98重量%之水,其中該成分之百分比係以組成物之總重量計之重量百分比,且其中組成物之該等成分之重量百分比的總和不超過100重量%。
- 如申請專利範圍第1項之清潔組成物,其包含成分(a),係選自由配方A-C2 所組成之群,其中所有百分比係以配方總重量計之重量%:配方A 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀3.0% 4-甲基嗎啉N-氧化物0.30%聚氧伸乙基(150)二壬苯基醚0.08% 2-巰基苯并咪唑91.0%水配方B 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀3.0% 4-甲基嗎啉N-氧化物0.30%聚氧伸乙基(150)二壬苯基醚0.20% 5-胺基-1,3,4-噻二唑-2-硫醇90.86%水配方C 3.60%氫氧化苄基三甲基銨0.27%氫氧化鉀3.5% 4-甲基嗎啉N-氧化物15.0% 4-(3-胺丙基)嗎啉0.30%聚氧伸乙基(150)二壬苯基醚0.08% 2-巰基苯并咪唑77.25%水配方D 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀 20.0%二甲亞碸0.08% 2-巰基苯并咪唑74.28%水配方E 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀10.0%四亞甲碸0.30%環氧乙烷、甲基、具有環氧乙烷之聚合物、具2,2’-(氧化亞胺基)雙(乙醇)(2:1)之醚、N(-3(C9-11-異烷氧基)丙基)衍生物,富含C10 (C10 -rich)0.08% 2-巰基苯并咪唑83.98%水配方F 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀-10.0%二(乙二醇)丁基醚10.0% 2-(2-二甲胺基)乙氧基)乙醇0.30%環氧乙烷、具有環氧乙烷之甲基-聚合物、具2,2’-(氧化亞胺基)雙(乙醇)(2:1)之醚、N(-3(C9-11-異烷氧基)丙基)衍生物,富含C10 74.06%水配方G 5.36%氫氧化苄基三甲基銨0.28%氫氧化鉀 10.0%四亞甲碸10.0%二(乙二醇)丁基醚0.10%環氧乙烷、甲基、具有環氧乙烷之聚合物、單(辛苯基)醚0.08% 2-巰基苯并咪唑74.18%水配方H
- 如申請專利範圍第1項之清潔組成物,其中該ACC包含氫氧化鉀。
- 如申請專利範圍第1項之清潔組成物,更包含選自由鉗合劑、表面活性劑、共溶劑及其組合所組成之群之種類。
- 如申請專利範圍第6項之清潔組成物,其中該鉗合劑包括選自由下列所組成之群之鉗合劑種類:三唑;經選自由C1 -C8 烷基、胺基、硫醇、巰基、亞胺基、羧基及硝基所組成之群之取代基取代之三唑;噻唑;四唑;咪唑;磷酸酯;硫醇;;甘油;胺基酸;羧酸;醇;醯胺;及喹啉;其中該表面活性劑包含選自由下列所組成之群之表面活性劑種類:氟烷基表面活性劑;聚乙二醇;聚丙二醇;聚乙二醇醚;聚丙二醇醚;羧酸鹽;十二烷基苯磺酸及其鹽;聚丙烯酸酯聚合物;二壬苯基聚氧伸乙基;聚矽氧聚合物;經改質之聚矽氧聚合物;乙炔二醇;經改質之乙炔二醇;烷基銨鹽;經改質之烷基銨鹽;及前述成分之兩者或以上的組合;及該共溶劑包含選自由下列所組成之群之共溶劑種類:胺;二醇;二醇醚;聚二醇醚;及前述成分之兩者或以上的組合。
- 如申請專利範圍第7項之清潔組成物,其中該鉗合劑包括選自由下列所組成之群之鉗合劑種類:1,2,4-三唑;苯并三唑;甲苯三唑;5-苯基-苯并三唑;5-硝基-苯并三唑;4-甲基-2-苯基咪唑;2-巰基噻唑啉;1-胺基-1,2,4-三唑;羥基苯并三唑;2-(5-胺戊基)苯并三唑;1-胺基-1,2,3-三唑;1-胺基-5-甲基-1,2,3-三唑;3-胺基-1,2,4-三唑;3-巰基-1,2,4-三唑;3-胺基-5-巰基-1,2,4-三唑、3-異丙基-1,2,4-三唑;5-苯基硫醇-苯并三唑;鹵基苯并三唑,其中鹵基係選自由F、Cl、Br及I所組成之群;萘并三唑;2-巰基苯并咪唑;2-巰基苯并噻唑;5-胺基四唑;5-胺基-1,3,4-噻二唑-2-硫醇;2,4-二胺基-6-甲基-1,3,5-三;噻唑;三;甲基四唑;1,3-二甲基-2-咪唑啶酮;1,5-五亞甲基四唑;1-苯基-5-巰基四唑;二胺甲基三、巰基苯并噻唑;咪唑啉硫酮;巰基苯并咪唑;4-甲基-4H-1,2,4-三唑-3-硫醇;5-胺基-1,3,4-噻二唑-2-硫醇;苯并噻唑;磷酸三甲苯酯;吲唑;鳥嘌呤;腺嘌呤;甘油;硫基甘油;氮基三乙酸;柳醯胺;亞胺二乙酸;苯并鳥糞胺;三聚氰胺;硫基三聚氰酸;鄰胺苯甲酸;五倍子酸;抗壞血酸;水楊酸;8-羥喹啉;5-羧酸-苯并三唑;3-巰基丙醇;硼酸;及亞胺基二乙酸;及其中該共溶劑包含選自由下列所組成之群之共溶劑種類:二甲基二甘醇胺;1,8-二吖雙環[5.4.0]十一烯;胺丙基嗎啉;三乙醇胺;甲基乙醇胺;二甘醇;丙二醇;新戊二醇;羥乙基嗎啉;胺丙基嗎啉;二(乙二醇)單乙醚;二(丙 二醇)丙基醚;乙二醇苯基醚;二(丙二醇)丁基醚;丁基卡必醇;聚二醇醚;及前述成分之兩者或以上的組合。
- 一種自其上具有光阻及/或SARC材料之基板移除該材料之方法,該方法包括使基板與清潔組成物接觸足夠的時間,以自基板至少部分移除該材料,其中該清潔組成物包括選自由下列所組成之群之活性清潔組合(ACC):(a)第四銨鹼結合鹼金屬及鹼土金屬鹼之至少一者;及(b)強鹼結合氧化劑,其中該氧化劑包含選自由胺-N-氧化物、過硼酸鹽、過硫酸鹽及前述成分之兩者或以上之組合所組成之群之氧化劑種類。
- 如申請專利範圍第9項之方法,其中該基板包括半導體裝置結構。
- 如申請專利範圍第9項之方法,其中該接觸係在選自下列組成之群的條件下進行:約10至約45分鐘之時間;約50℃至約80℃範圍內之溫度;及其組合。
- 如申請專利範圍第9項之方法,其中該清潔組成物包含成分(a),以及該組成物包含以下成分:0.1-40.0重量%之有機第四銨鹼;0.01-5重量%之鹼金屬或鹼土金屬鹼;0-80重量%之溶劑及/或胺;0-5重量%之表面活性劑;0-10重量%之鉗合劑/鈍化劑;及0-98重量%之水,其中該成分之百分比係以組成物之總重量計之重量百分 比,且其中組成物之該等成分之重量百分比的總和不超過100重量%。
- 如申請專利範圍第9項之方法,其中該清潔組成物包含成分(a)且係選自由配方A-C2 所組成之群,其中所有百分比係以配方總重量計之重量%:配方A
- 如申請專利範圍第9項之方法,其中該ACC包含氫氧化鉀。
- 如申請專利範圍第9項之方法,其中該清潔組成物更包含選自由鉗合劑、表面活性劑、共溶劑及其組合所組成之群之種類。
- 如申請專利範圍第15項之方法,其中該鉗合劑包括選自由下列所組成之群之鉗合劑種類:三唑;經選自由C1 -C8 烷基、胺基、硫醇、巰基、亞胺基、羧基及硝基所組成之群之取代基取代之三唑;噻唑;四唑;咪唑;磷酸酯;硫醇;;甘油;胺基酸;羧酸;醇;醯胺;及喹啉;其中該表面活性劑包含選自由下列所組成之群之表面活性劑種類:氟烷基表面活性劑;聚乙二醇;聚丙二醇;聚乙二醇醚;聚丙二醇醚;羧酸鹽;十二烷基苯磺酸及其鹽;聚丙烯酸酯聚合物;二壬苯基聚氧伸乙基;聚矽氧聚 合物;經改質之聚矽氧聚合物;乙炔二醇;經改質之乙炔二醇;烷基銨鹽;經改質之烷基銨鹽;及前述成分之兩者或以上的組合;及該共溶劑包含選自由下列所組成之群之共溶劑種類:胺;二醇;二醇醚;聚二醇醚;及前述成分之兩者或以上的組合。
- 如申請專利範圍第15項之方法,其中該鉗合劑包括選自由下列所組成之群之鉗合劑種類:1,2,4-三唑;苯并三唑;甲苯三唑;5-苯基-苯并三唑;5-硝基-苯并三唑;1-胺基-1,2,4-三唑;羥基苯并三唑;2-(5-胺戊基)苯并三唑;1-胺基-1,2,3-三唑;4-甲基-2-苯基咪唑;2-巰基噻唑啉;1-胺基-5-甲基-1,2,3-三唑;3-胺基-1,2,4-三唑;3-胺基-5-巰基-1,2,4-三唑、3-巰基-1,2,4-三唑;3-異丙基-1,2,4-三唑;5-苯基硫醇-苯并三唑;鹵基苯并三唑,其中鹵基係選自由F、Cl、Br及I所組成之群;萘并三唑;2-巰基苯并咪唑;2-巰基苯并噻唑;5-胺基四唑;5-胺基-1,3,4-噻二唑-2-硫醇;2,4-二胺基-6-甲基-1,3,5-三;噻唑;三;甲基四唑;1,3-二甲基-2-咪唑啶酮;1,5-五亞甲基四唑;1-苯基-5-巰基四唑;二胺甲基三、巰基苯并噻唑;咪唑啉硫酮;巰基苯并咪唑;4-甲基-4H-1,2,4-三唑-3-硫醇;5-胺基-1,3,4-噻二唑-2-硫醇;苯并噻唑;磷酸三甲苯酯;吲唑;鳥嘌呤;腺嘌呤;甘油;硫基甘油;氮基三乙酸;柳醯胺;亞胺二乙酸;苯并鳥糞胺;三聚氰胺;硫基三聚氰酸;鄰胺苯甲酸;五倍子酸;抗壞血酸; 水楊酸;8-羥喹啉;5-羧酸-苯并三唑;3-巰基丙醇;硼酸;及亞胺基二乙酸;及其中該共溶劑包含選自由下列所組成之群之共溶劑種類:二甲基二甘醇胺;1,8-二吖雙環[5.4.0]十一烯;胺丙基嗎啉;三乙醇胺;甲基乙醇胺;二甘醇;丙二醇;新戊二醇;羥乙基嗎啉;胺丙基嗎啉;二(乙二醇)單乙醚;二(丙二醇)丙基醚;乙二醇苯基醚;二(丙二醇)丁基醚;丁基卡必醇;聚二醇醚;及前述成分之兩者或以上的組合。
- 如申請專利範圍第1項之清潔組成物,包含成分(a),其中第四銨鹼包含有機第四銨鹼。
- 如申請專利範圍第1項之清潔組成物,包含成分(a),其中該ACC包含氫氧化苄基三甲基銨及氫氧化鉀。
- 如申請專利範圍第6項之清潔組成物,其中該共溶劑包含二醇醚。
- 如申請專利範圍第1項之清潔組成物,包含成分(a),包含氫氧化苄基三甲基銨、氫氧化鉀、四亞甲碸、二(乙二醇)丁基醚、環氧乙烷、甲基、具有環氧乙烷之聚合物、單(辛苯基)醚、2-巰基苯并咪唑及水。
- 一種半導體裝置之製造方法,包含使基板與申請專利範圍第1項之清潔組成物接觸足夠的時間,以自基板至少部分移除該材料。
- 如申請專利範圍第1項之清潔組成物,包含成分(a),更包含氧化劑。
- 如申請專利範圍第1項之清潔組成物,包含環氧 乙烷種類,其中該環氧乙烷種類包含選自由下列所組成之群之種類:環氧乙烷、甲基、具有環氧乙烷之聚合物、具2,2’-(氧化亞胺基)雙(乙醇)之醚(2:1)、N(-3(C9-11-異烷氧基)丙基)衍生物,富含C10 ;及環氧乙烷、甲基、具有環氧乙烷之聚合物、單(辛苯基)醚。
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JP2007526523A (ja) | 2007-09-13 |
CA2599727A1 (en) | 2005-09-15 |
EP1730600B1 (en) | 2016-01-06 |
CN1938647A (zh) | 2007-03-28 |
EP1730600A1 (en) | 2006-12-13 |
EP1730600A4 (en) | 2010-07-28 |
US20130109605A1 (en) | 2013-05-02 |
CN1938647B (zh) | 2012-08-29 |
KR101256230B1 (ko) | 2013-04-17 |
TW200534364A (en) | 2005-10-16 |
WO2005085957A1 (en) | 2005-09-15 |
KR20070017509A (ko) | 2007-02-12 |
US20050197265A1 (en) | 2005-09-08 |
US8338087B2 (en) | 2012-12-25 |
JP4758982B2 (ja) | 2011-08-31 |
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