CN1851921A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1851921A CN1851921A CN200610074615.4A CN200610074615A CN1851921A CN 1851921 A CN1851921 A CN 1851921A CN 200610074615 A CN200610074615 A CN 200610074615A CN 1851921 A CN1851921 A CN 1851921A
- Authority
- CN
- China
- Prior art keywords
- electrode
- bucking
- capacitor
- semiconductor device
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005123462 | 2005-04-21 | ||
JP2005123462A JP4805600B2 (ja) | 2005-04-21 | 2005-04-21 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1851921A true CN1851921A (zh) | 2006-10-25 |
CN100485933C CN100485933C (zh) | 2009-05-06 |
Family
ID=37133394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610074615.4A Expired - Fee Related CN100485933C (zh) | 2005-04-21 | 2006-04-20 | 半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7663207B2 (zh) |
JP (1) | JP4805600B2 (zh) |
CN (1) | CN100485933C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673771B (zh) * | 2008-09-08 | 2012-08-08 | 索尼株式会社 | 电容性元件 |
CN102832194A (zh) * | 2007-12-20 | 2012-12-19 | 联发科技股份有限公司 | 电容结构 |
CN108172565A (zh) * | 2017-12-27 | 2018-06-15 | 上海艾为电子技术股份有限公司 | 一种mom电容及集成电路 |
CN116632001A (zh) * | 2023-07-24 | 2023-08-22 | 合肥晶合集成电路股份有限公司 | 一种半导体装置及半导体装置的设计辅助装置 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332290A (ja) * | 2005-05-25 | 2006-12-07 | Elpida Memory Inc | 容量素子、半導体装置及び半導体装置のパッド電極の端子容量設定方法 |
KR100794521B1 (ko) * | 2005-12-17 | 2008-01-16 | 삼성전자주식회사 | 커패시터 어레이 |
US7427550B2 (en) | 2006-06-29 | 2008-09-23 | International Business Machines Corporation | Methods of fabricating passive element without planarizing |
KR100800928B1 (ko) * | 2006-08-30 | 2008-02-04 | 동부일렉트로닉스 주식회사 | 반도체 소자의 캐패시터 구조체 |
JP2008205165A (ja) * | 2007-02-20 | 2008-09-04 | Toshiba Corp | 半導体集積回路装置 |
KR100862870B1 (ko) * | 2007-05-10 | 2008-10-09 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US8207569B2 (en) * | 2007-06-06 | 2012-06-26 | Qualcomm, Incorporated | Intertwined finger capacitors |
CN101681880B (zh) | 2007-06-27 | 2011-06-15 | 三美电机株式会社 | 半导体装置 |
JP5103232B2 (ja) * | 2008-03-18 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8169050B2 (en) * | 2008-06-26 | 2012-05-01 | International Business Machines Corporation | BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit |
US20100038752A1 (en) * | 2008-08-15 | 2010-02-18 | Chartered Semiconductor Manufacturing, Ltd. | Modular & scalable intra-metal capacitors |
JP5294883B2 (ja) * | 2009-01-05 | 2013-09-18 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置および電子機器 |
MX2011007664A (es) | 2009-01-21 | 2011-10-24 | Sumitomo Metal Ind | Material metalico curvo y proceso para producir el mismo. |
JP2010225880A (ja) * | 2009-03-24 | 2010-10-07 | Nec Corp | 半導体装置及びその製造方法 |
JP5569354B2 (ja) * | 2010-11-17 | 2014-08-13 | 富士通セミコンダクター株式会社 | キャパシタおよび半導体装置 |
US9048019B2 (en) * | 2011-09-27 | 2015-06-02 | Infineon Technologies Ag | Semiconductor structure including guard ring |
JP2014120615A (ja) * | 2012-12-17 | 2014-06-30 | Fujitsu Semiconductor Ltd | 容量素子、容量アレイおよびa/d変換器 |
US8963332B2 (en) | 2013-03-15 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor device with dummy lines |
US9478602B2 (en) * | 2014-10-07 | 2016-10-25 | Globalfoundries Inc. | Method of forming an embedded metal-insulator-metal (MIM) capacitor |
TWI747805B (zh) * | 2014-10-08 | 2021-12-01 | 日商索尼半導體解決方案公司 | 攝像裝置及製造方法、以及電子機器 |
US10237507B2 (en) | 2015-03-04 | 2019-03-19 | Sony Corporation | Analog-to-digital converter, solid-state imaging apparatus, and electronic apparatus |
US10002864B1 (en) | 2016-11-30 | 2018-06-19 | United Microelectronics Corp. | Intra-metal capacitor and method of forming the same |
JP6384553B2 (ja) * | 2017-02-07 | 2018-09-05 | 株式会社ソシオネクスト | 容量素子、容量アレイおよびa/d変換器 |
US10236573B2 (en) | 2017-06-20 | 2019-03-19 | Qualcomm Incorporated | On-chip coupling capacitor with patterned radio frequency shielding structure for lower loss |
US10453791B2 (en) | 2018-02-06 | 2019-10-22 | Apple Inc. | Metal-on-metal capacitors |
EP3993028A4 (en) | 2019-06-29 | 2022-07-27 | Huawei Technologies Co., Ltd. | INTERDIGITATED CAPACITOR AND MULTIPLIER DIGITAL TO ANALOG CONVERSION CIRCUIT |
US11152458B2 (en) * | 2020-02-07 | 2021-10-19 | Macronix International Co., Ltd. | Metal capacitor |
US11688680B2 (en) * | 2020-11-05 | 2023-06-27 | International Business Machines Corporation | MIM capacitor structures |
CN113571637B (zh) * | 2021-09-24 | 2022-02-11 | 晶芯成(北京)科技有限公司 | Mom电容器及集成电路装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590489A (ja) | 1991-09-30 | 1993-04-09 | Fujitsu Ltd | 半導体集積回路 |
JP2001196536A (ja) * | 2000-01-11 | 2001-07-19 | Hitachi Ltd | 半導体集積回路装置 |
JP2001196372A (ja) | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置 |
US6822312B2 (en) * | 2000-04-07 | 2004-11-23 | Koninklijke Philips Electronics N.V. | Interdigitated multilayer capacitor structure for deep sub-micron CMOS |
JP3842111B2 (ja) * | 2001-11-13 | 2006-11-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2004146632A (ja) * | 2002-10-25 | 2004-05-20 | Denso Corp | 半導体装置およびその製造方法 |
JP2004179419A (ja) * | 2002-11-27 | 2004-06-24 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4525965B2 (ja) * | 2004-01-06 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2005
- 2005-04-21 JP JP2005123462A patent/JP4805600B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-20 US US11/407,323 patent/US7663207B2/en not_active Expired - Fee Related
- 2006-04-20 CN CN200610074615.4A patent/CN100485933C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832194A (zh) * | 2007-12-20 | 2012-12-19 | 联发科技股份有限公司 | 电容结构 |
CN102832194B (zh) * | 2007-12-20 | 2015-12-02 | 联发科技股份有限公司 | 电容结构 |
CN101673771B (zh) * | 2008-09-08 | 2012-08-08 | 索尼株式会社 | 电容性元件 |
CN108172565A (zh) * | 2017-12-27 | 2018-06-15 | 上海艾为电子技术股份有限公司 | 一种mom电容及集成电路 |
CN108172565B (zh) * | 2017-12-27 | 2020-12-11 | 上海艾为电子技术股份有限公司 | 一种mom电容及集成电路 |
CN116632001A (zh) * | 2023-07-24 | 2023-08-22 | 合肥晶合集成电路股份有限公司 | 一种半导体装置及半导体装置的设计辅助装置 |
CN116632001B (zh) * | 2023-07-24 | 2023-10-13 | 合肥晶合集成电路股份有限公司 | 一种半导体装置及半导体装置的设计辅助装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4805600B2 (ja) | 2011-11-02 |
US7663207B2 (en) | 2010-02-16 |
JP2006303220A (ja) | 2006-11-02 |
CN100485933C (zh) | 2009-05-06 |
US20060237819A1 (en) | 2006-10-26 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101029 |
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Free format text: CORRECT: ADDRESS; FROM: 100871 8/F, FANGZHENG BUILDING, ZHONGGUANCUN, NO.298, CHENGFU ROAD, HAIDIANDISTRICT, BEIJING TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20101105 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090506 Termination date: 20140420 |