JP2008205165A - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP2008205165A JP2008205165A JP2007039157A JP2007039157A JP2008205165A JP 2008205165 A JP2008205165 A JP 2008205165A JP 2007039157 A JP2007039157 A JP 2007039157A JP 2007039157 A JP2007039157 A JP 2007039157A JP 2008205165 A JP2008205165 A JP 2008205165A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
【解決手段】半導体基板上において、少なくとも1つの機能性素子が構成された半導体集積回路装置において、前記機能性素子の上側及び下側の少なくとも一方において層間絶縁膜を介して形成されるとともに、その層間絶縁膜で分離されている金属配線同士を繋ぐ層間接続体の内側であって前記機能性素子の外側に位置する領域において、前記機能性素子を囲むようにしてダミー金属部を設ける。
【選択図】図2
Description
前記機能性素子の上側及び下側の少なくとも一方において層間絶縁膜を介して形成されるとともに、その層間絶縁膜で分離されている金属配線同士を繋ぐ層間接続体の内側であって前記機能性素子の外側に位置する領域において、前記機能性素子を囲むようにしてダミー金属部を設けたことを特徴とする、半導体集積回路装置に関する。
図1は、第1の実施形態における半導体集積回路装置を示す平面図であり、図2は、図1に示す半導体集積回路装置のI−I線に沿って切った場合の断面図である。なお、これらの図においては、本実施形態の特徴を明確にすべく、その具体的な構成要素、特に配線パターンなどについては実際のものと異なり、簡略化して描いている。
図5は、第2の実施形態における半導体集積回路装置を示す平面図であり、図6は、図5に示す半導体集積回路装置のII−II線に沿って切った場合の断面図である。なお、これらの図においては、本実施形態の特徴を明確にすべく、その具体的な構成要素、特に配線パターンなどについては実際のものと異なり、簡略化して描いている。また、上記第1の実施形態と類似あるいは同一の構成要素に関しては、同じ参照符号を用いている。
11 半導体基板
12,13,14,15,16 層間接続体
21 第1の層間絶縁膜
22 第2の層間絶縁膜
23 第3の層間絶縁膜
24 第4の層間絶縁膜
25 第5の層間絶縁膜
26 第6の層間絶縁膜
M1 第1のメタル層
M2 第2のメタル層
M3 第3のメタル層
M4 第4のメタル層
M5 第5のメタル層
M6 第6のメタル層
Claims (5)
- 半導体基板上において、少なくとも1つの機能性素子が構成された半導体集積回路装置であって、
前記機能性素子の上側及び下側の少なくとも一方において層間絶縁膜を介して形成されるとともに、その層間絶縁膜で分離されている金属配線同士を繋ぐ層間接続体の内側であって前記機能性素子の外側に位置する領域において、前記機能性素子を囲むようにしてダミー金属部を設けたことを特徴とする、半導体集積回路装置。 - 前記ダミー金属部は連続した単一の金属部材からなることを特徴とする、請求項1に記載の半導体集積回路装置。
- 前記ダミー金属部は複数の金属片を含み、これら複数の金属片が半導体集積回路装置に要求される最小配線間隔の3倍以内の間隔で連続して配置されてなることを特徴とする、請求項1に記載の半導体集積回路装置。
- 前記機能性素子は容量素子であることを特徴とする、請求項1〜3のいずれか一に記載の半導体集積回路装置。
- 前記機能性素子はメタルフューズであることを特徴とする、請求項1〜3のいずれか一に記載の半導体集積回路装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007039157A JP2008205165A (ja) | 2007-02-20 | 2007-02-20 | 半導体集積回路装置 |
US12/025,311 US20080290454A1 (en) | 2007-02-20 | 2008-02-04 | Semiconductor integrated circuit device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007039157A JP2008205165A (ja) | 2007-02-20 | 2007-02-20 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
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JP2008205165A true JP2008205165A (ja) | 2008-09-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007039157A Pending JP2008205165A (ja) | 2007-02-20 | 2007-02-20 | 半導体集積回路装置 |
Country Status (2)
Country | Link |
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US (1) | US20080290454A1 (ja) |
JP (1) | JP2008205165A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009106909A (ja) * | 2007-10-31 | 2009-05-21 | National Institute Of Advanced Industrial & Technology | 二酸化炭素を選択的に分離・精製するための吸着剤 |
JP2011054701A (ja) * | 2009-09-01 | 2011-03-17 | Sanyo Electric Co Ltd | 半導体装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011062821A1 (en) * | 2009-11-17 | 2011-05-26 | Marvell World Trade Ltd | Ground shield capacitor |
US8659126B2 (en) * | 2011-12-07 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit ground shielding structure |
US8610247B2 (en) | 2011-12-30 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a transformer with magnetic features |
US8963332B2 (en) | 2013-03-15 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor device with dummy lines |
JP6432443B2 (ja) * | 2015-05-20 | 2018-12-05 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP6808565B2 (ja) * | 2017-04-07 | 2021-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置、それを備えた電子回路、及び、半導体装置の形成方法 |
Citations (8)
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JPH07263558A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体装置 |
JPH08264654A (ja) * | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | フューズ配線を有する電子装置 |
JP2002353315A (ja) * | 2001-05-25 | 2002-12-06 | Nec Microsystems Ltd | 半導体装置およびそのレイアウト方法 |
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JP3638778B2 (ja) * | 1997-03-31 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP3466929B2 (ja) * | 1998-10-05 | 2003-11-17 | 株式会社東芝 | 半導体装置 |
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JP2002118235A (ja) * | 2000-10-10 | 2002-04-19 | Mitsubishi Electric Corp | 半導体装置、半導体製造方法、および半導体製造用マスク |
JP4688343B2 (ja) * | 2001-05-16 | 2011-05-25 | ルネサスエレクトロニクス株式会社 | 強誘電体メモリ装置 |
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JP2006351663A (ja) * | 2005-06-14 | 2006-12-28 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
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US7224069B2 (en) * | 2005-07-25 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy structures extending from seal ring into active circuit area of integrated circuit chip |
JP2009123743A (ja) * | 2007-11-12 | 2009-06-04 | Panasonic Corp | 半導体装置の製造方法 |
-
2007
- 2007-02-20 JP JP2007039157A patent/JP2008205165A/ja active Pending
-
2008
- 2008-02-04 US US12/025,311 patent/US20080290454A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07263558A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体装置 |
JPH08264654A (ja) * | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | フューズ配線を有する電子装置 |
JP2002353315A (ja) * | 2001-05-25 | 2002-12-06 | Nec Microsystems Ltd | 半導体装置およびそのレイアウト方法 |
JP2004119969A (ja) * | 2002-09-03 | 2004-04-15 | Toshiba Corp | 半導体装置 |
JP2004146632A (ja) * | 2002-10-25 | 2004-05-20 | Denso Corp | 半導体装置およびその製造方法 |
JP2004312007A (ja) * | 2003-04-03 | 2004-11-04 | Samsung Electronics Co Ltd | 金属−絶縁体−金属キャパシタを含む二重ダマシン配線構造及びその製造方法 |
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JP2006303220A (ja) * | 2005-04-21 | 2006-11-02 | Nec Electronics Corp | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009106909A (ja) * | 2007-10-31 | 2009-05-21 | National Institute Of Advanced Industrial & Technology | 二酸化炭素を選択的に分離・精製するための吸着剤 |
JP2011054701A (ja) * | 2009-09-01 | 2011-03-17 | Sanyo Electric Co Ltd | 半導体装置 |
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