CN1691342B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1691342B CN1691342B CN2005100676778A CN200510067677A CN1691342B CN 1691342 B CN1691342 B CN 1691342B CN 2005100676778 A CN2005100676778 A CN 2005100676778A CN 200510067677 A CN200510067677 A CN 200510067677A CN 1691342 B CN1691342 B CN 1691342B
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- semiconductor device
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- integrated circuit
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
Description
Claims (29)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004128957 | 2004-04-23 | ||
JP2004-128957 | 2004-04-23 | ||
JP2004128957A JP2005311205A (ja) | 2004-04-23 | 2004-04-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1691342A CN1691342A (zh) | 2005-11-02 |
CN1691342B true CN1691342B (zh) | 2011-09-07 |
Family
ID=35135541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100676778A Active CN1691342B (zh) | 2004-04-23 | 2005-04-25 | 半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050236623A1 (zh) |
JP (1) | JP2005311205A (zh) |
CN (1) | CN1691342B (zh) |
Families Citing this family (112)
Publication number | Priority date | Publication date | Assignee | Title |
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US7252242B2 (en) * | 2005-02-04 | 2007-08-07 | Chun-Hsin Ho | Method for providing additional service based on dual UICC |
CN101305315B (zh) * | 2005-11-11 | 2010-05-19 | 株式会社半导体能源研究所 | 形成具有功能性的层的方法及半导体器件的制造方法 |
JP4680850B2 (ja) * | 2005-11-16 | 2011-05-11 | 三星モバイルディスプレイ株式會社 | 薄膜トランジスタ及びその製造方法 |
JP4820372B2 (ja) * | 2005-12-01 | 2011-11-24 | シャープ株式会社 | 回路部材、電極接続構造及びそれを備えた表示装置 |
US7519328B2 (en) | 2006-01-19 | 2009-04-14 | Murata Manufacturing Co., Ltd. | Wireless IC device and component for wireless IC device |
WO2007083575A1 (ja) * | 2006-01-19 | 2007-07-26 | Murata Manufacturing Co., Ltd. | 無線icデバイス |
CN101385039B (zh) * | 2006-03-15 | 2012-03-21 | 株式会社半导体能源研究所 | 半导体器件 |
CN101416353B (zh) | 2006-04-10 | 2013-04-10 | 株式会社村田制作所 | 无线集成电路设备 |
BRPI0702888B1 (pt) * | 2006-04-14 | 2019-09-17 | Murata Manufacturing Co., Ltd | Antena |
JP4572983B2 (ja) * | 2006-04-14 | 2010-11-04 | 株式会社村田製作所 | 無線icデバイス |
CN101416350B (zh) | 2006-04-26 | 2013-09-04 | 株式会社村田制作所 | 带馈电电路板的物件 |
US9064198B2 (en) | 2006-04-26 | 2015-06-23 | Murata Manufacturing Co., Ltd. | Electromagnetic-coupling-module-attached article |
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CN101454989A (zh) * | 2006-05-30 | 2009-06-10 | 株式会社村田制作所 | 信息终端设备 |
EP2023275B1 (en) | 2006-06-01 | 2011-04-27 | Murata Manufacturing Co. Ltd. | Radio frequency ic device and composite component for radio frequency ic device |
WO2007145053A1 (ja) | 2006-06-12 | 2007-12-21 | Murata Manufacturing Co., Ltd. | 電磁結合モジュール、無線icデバイスの検査システム及びそれを用いた電磁結合モジュール、無線icデバイスの製造方法 |
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JP4310589B2 (ja) | 2006-08-24 | 2009-08-12 | 株式会社村田製作所 | 無線icデバイスの検査システム及びそれを用いた無線icデバイスの製造方法 |
JP4775442B2 (ja) | 2006-09-26 | 2011-09-21 | 株式会社村田製作所 | 電磁結合モジュール付き物品 |
JP4876842B2 (ja) | 2006-10-16 | 2012-02-15 | 大日本印刷株式会社 | Icタグラベル |
CN101523750B (zh) | 2006-10-27 | 2016-08-31 | 株式会社村田制作所 | 带电磁耦合模块的物品 |
JP4835696B2 (ja) | 2007-01-26 | 2011-12-14 | 株式会社村田製作所 | 電磁結合モジュール付き容器 |
WO2008096576A1 (ja) | 2007-02-06 | 2008-08-14 | Murata Manufacturing Co., Ltd. | 電磁結合モジュール付き包装材 |
US8381990B2 (en) * | 2007-03-30 | 2013-02-26 | Sony Corporation | Antenna module |
JP5024372B2 (ja) | 2007-04-06 | 2012-09-12 | 株式会社村田製作所 | 無線icデバイス |
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JP5076925B2 (ja) * | 2007-04-11 | 2012-11-21 | セイコーエプソン株式会社 | アクティブマトリクス基板、及びその製造方法、電気光学装置、電子機器 |
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WO2009008296A1 (ja) | 2007-07-09 | 2009-01-15 | Murata Manufacturing Co., Ltd. | 無線icデバイス |
CN104540317B (zh) | 2007-07-17 | 2018-11-02 | 株式会社村田制作所 | 印制布线基板 |
US20090021352A1 (en) | 2007-07-18 | 2009-01-22 | Murata Manufacturing Co., Ltd. | Radio frequency ic device and electronic apparatus |
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WO2009110382A1 (ja) | 2008-03-03 | 2009-09-11 | 株式会社村田製作所 | 複合アンテナ |
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US20050236623A1 (en) | 2005-10-27 |
CN1691342A (zh) | 2005-11-02 |
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