CN1547777A - 由碳纳米管构成沟道的场效应晶体管 - Google Patents
由碳纳米管构成沟道的场效应晶体管 Download PDFInfo
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Abstract
一种场效应晶体管,它包括排列在衬底上的沟道、连接到沟道起始端的源电极、连接到沟道终止端的漏电极、排列在沟道顶部或侧面上的绝缘体、以及经由绝缘体而排列在沟道顶部或侧面上的栅电极,其中,沟道由多个碳纳米管组成。
Description
技术领域
本发明涉及到用来控制或放大频率非常高的数字电信号或模拟电信号的场效应晶体管。
背景技术
由于近年向高速信息处理和通信的发展趋势,故对用来控制或放大100GHz或以上的非常高频率的数字电信号或模拟电信号的电子器件有了日益增长的需求。
用于上述目的的一种有代表性的电子器件,是由诸如GaAs之类的III-V族化合物制成的场效应晶体管。附图中图6示出了典型场效应晶体管的剖面图,图7示出了其平面图。如图6和7所示,此场效应晶体管具有衬底1、沟道2、源电极3、漏电极4、绝缘体5、以及栅电极6。沟道通常由半导体制成,且包含对导电有贡献的带电粒子。这些带电粒子是电子或空穴。
场效应晶体管是用来将输入到栅电极的电压信号转换成从源电极或漏电极输出的电流信号的一种器件。当电压被施加在源电极与漏电极之间时,存在于沟道中的带电粒子就沿源电极与漏电极之间的电场的方向运动,并以电流信号的形式从源电极或漏电极被输出。此电流信号正比于带电粒子的密度和速度。当电压被施加到与沟道上表面或侧表面相对且其间插入有绝缘体的栅电极时,沟道中带电粒子的密度发生变化。因此,借助于改变施加到栅电极的电压,能够改变电流信号。
场效应晶体管的运行速度决定于带电粒子通过沟道行进的时间。更具体地说,场效应晶体管的运行速度决定于带电粒子在经由绝缘体而与栅电极接触的沟道部分的长度(栅长度)上行进的时间。当施加在源电极与漏电极之间的电压增大时,沟道中带电粒子的行进速度增大。但由于散射几率随着行进速度的增大而增大,故带电粒子的行进速度不超过一定的数值。此一定的数值被称为饱和速度。是为场效应晶体管运行速度指标的截止频率fT,被表示为fT=Vs/2π1g,其中Vs表示带电粒子的饱和速度,而1g表示栅长度。
为了提高运行速度,亦即提高截止频率,可以增大饱和速度或可以减小栅长度。栅长度决定于对栅电极执行的微切削加工工艺,且目前能够被减小到大约0.1微米。为了提高饱和速度,可以用饱和速度高的半导体来构成沟道。目前,砷化镓被广泛地用作这种半导体并具有1×107cm/s的饱和速度。若栅长度为0.1微米,则截止频率为160GHz。
近年向高速信息处理和通信的发展趋势,已经导致了对用来控制或放大其频率高于砷化镓制成的场效应晶体管所能够处理的频率的数字电信号或模拟电信号的电子器件的需求。因此,对由饱和速度更高的材料制成的场效应晶体管已经有了需求。
发明的公开
根据本发明,提供了一种场效应晶体管,它具有排列在衬底上的沟道、连接到沟道起始端的源电极、连接到沟道终止端的漏电极、排列在沟道上表面上的绝缘体、以及排列在沟道上表面上且其间插入有绝缘体的栅电极,其特征在于,此沟道由碳纳米管制成。
若碳纳米管是半导电的,则场效应晶体管更有效。此碳纳米管可以是单层碳纳米管或多层碳纳米管。
还提供了一种场效应晶体管,其中,带电粒子供体被加入到碳纳米管。还提供了一种场效应晶体管,其中,带电粒子供体包含碱金属。还提供了一种场效应晶体管,其中,带电粒子供体包含卤素分子。
还提供了一种场效应晶体管,它具有由碳纳米管构成的沟道,其特征在于,带电粒子供体被包含在碳纳米管中。还提供了一种场效应晶体管,其中,沟道由包含富勒烯(fullerene)的碳纳米管构成。
借助于抑制杂质散射或晶格散射,碳纳米管的饱和速度达到了8×107cm/s,这是砷化镓饱和速度的8倍。我们已经发现,利用这种材料作为沟道,能够得到截止频率为1THz或更高的场效应晶体管。
由于碳纳米管的直径非常小,故对能够流过一个单层碳纳米管的电流有限制,此电流最大约为1微安。实际上要求场效应晶体管的电流信号约为1毫安。若沟道由碳纳米管的阵列构成,则能够提供实际可行的场效应晶体管。此阵列的范围为1万到10万个碳纳米管。
普通的场效应晶体管跨越一定的栅电压(阈值电压)而执行开关操作。栅电极的电压值决定于沟道本身和带电粒子供体的特性。为了调节阈值电压,可以将带电粒子供体加入到沟道。
通常,带电粒子供体包括电子供体和空穴供体。已知诸如钠、钾、铷、铯之类的碱金属可以作为电子供体。还已知氯、溴、碘之类的卤素原子或卤素分子可以作为空穴供体。各种分子还作为带电粒子供体。例如,氨或烷基苄基二甲基氯化铵(benzalkonium chloride)作为电子供体,而氧分子作为空穴供体。若加入电子供体,则场效应晶体管作为n型场效应晶体管而工作,且其阈值电压可以借助于增加电子供体的量而沿负方向被调节。若加入空穴供体,则场效应晶体管作为p型场效应晶体管而工作,且其阈值电压可以借助于增加空穴供体的量而沿正方向被调节。
带电粒子供体可以存在于碳纳米管外面或可以被包含在碳纳米管中。若带电粒子供体被包含在碳纳米管中,则对外部影响较不敏感,使场效应晶体管能够具有稳定的电学特性。
附图的简要说明
图1是根据本发明第一实施方案的场效应晶体管的示意剖面图;
图2是根据本发明第一实施方案的场效应晶体管的示意平面图;
图3是根据本发明第一实施方案的在导电衬底上排列有绝缘膜的场效应晶体管的示意剖面图;
图4是根据本发明第二实施方案的场效应晶体管的示意平面图;
图5是根据本发明第三实施方案的场效应晶体管的示意平面图;
图6是常规场效应晶体管的示意剖面图;而
图7是常规场效应晶体管的示意平面图。
实施本发明的最佳模式
下面参照附图来描述本发明的各个实施方案。
图1是示意图,示出了根据本发明的场效应晶体管的第一实施方案的剖面结构。图2是第一实施方案的示意平面图。如图1和2所示,场效应晶体管具有衬底1、沟道2、源电极3、漏电极4、绝缘体5、以及栅电极6。
衬底可以包含绝缘衬底或半导体衬底。绝缘衬底可以由氧化硅、氮化硅、氧化铝、氧化钛、氟化钙、诸如丙烯酸树脂或环氧树脂、聚酰亚胺、四氟乙烯之类的绝缘树脂等制成。半导体衬底可以由硅、锗、砷化镓、磷化铟、碳化硅、铝、砷化镓、磷化铟、碳化硅等制成。衬底最好具有平坦的表面。
如图3所示,场效应晶体管的结构可以是绝缘膜被排列在导电衬底上。利用这种结构,导电衬底也可以用作第二栅电极。
多个碳纳米管在源电极与漏电极之间被排列,在其间提供沟道。本发明不局限于任何合成碳纳米管的工艺。可以用激光烧蚀工艺、弧光放电工艺、或化学气相淀积工艺来合成碳纳米管。碳纳米管可以是单层碳纳米管或多层碳纳米管。沟道中排列的各个相邻的碳纳米管,可以彼此分隔开0.3nm-10微米的距离。碳纳米管可以不仅沿水平方向排列,而且同时沿垂直方向排列。
碳纳米管具有电连接到源电极和漏电极的相反的末端。
将碳纳米管排列在衬底上的一种工艺,采用了自组分子膜。例如,用氨丙基乙氧基硅烷(aminopropylethoxysilane)分子膜覆盖部分衬底,并用六甲基二硅氮烷(hexamethyldisilazane)分子膜覆盖其它部分。前一种分子膜具有带正电荷的性质。由于碳纳米管具有带负电荷的性质,故它们被选择性地吸收到前一种分子膜,而几乎不被吸收到后一种分子膜。由于能够用电子束曝光工艺或光学曝光工艺将分子膜图形化成一定形状,故能够将各个纳米管安置并排列在任何所希望的位置中。
根据控制碳纳米管的工艺,采用了光学镊子。具体地说,当光束被聚焦时,微米尺寸的粒子被放在一起。根据这一工艺,可以将各个碳纳米管堆积在沟道中。或者,可以根据其倾向于沿电场方向定向的性质来排列各个碳纳米管。
源电极和漏电极可以由金属制成。例如,可以由金、银、铂、钛、碳化钛、钨、铝、钼、铬等制成。源电极和漏电极可以被附着到碳纳米管的末端或其侧面。源电极和漏电极可以在形成沟道之前或形成沟道之后制作。当制作源电极和漏电极时,为了更好的电连接,可以将其加热到300-1000℃的温度。或者,可以用其中分散了碳纳米管的抗蚀剂来涂敷衬底,并可以将抗蚀剂暴露于图形并显影,然后可以将电极涂敷到抗蚀剂。
栅电极可以直接制作在碳纳米管上,或可以制作在碳纳米管上且在其间插入绝缘膜。此绝缘膜可以由诸如氧化硅、氮化硅、氧化铝、氧化钛、氟化钙之类的无机材料、或诸如丙烯酸树脂、环氧树脂、聚酰亚胺、四氟乙烯等的聚合材料、或诸如氨丙基乙氧基硅烷之类的自组分子膜制成。由于在碳纳米管的侧面上不存在悬空键,故它们在化学上不活泼,使得能够自由地选择绝缘体。
栅电极可以由例如金、银、铂、钛、碳化钛、氮化钨钛、硅化钨、氮化钨、铝、钼、铬、多晶硅、或它们的组合制成。
碳纳米管可以被用作栅电极。在此情况下,能够得到非常短的栅长度。被使用的碳纳米管可以是单层碳纳米管、多层碳纳米管、或包含金属的碳纳米管。金属性碳纳米管较好。
图4是根据本发明的场效应晶体管的第二实施方案的示意平面图。此场效应晶体管具有衬底1、沟道2、源电极3、漏电极4、绝缘体5、栅电极6、以及带电粒子供体7。带电粒子供体将电子或空穴提供给碳纳米管,以便控制存在于碳纳米管中的带电粒子的密度。
电子供体可以是诸如钠、钾、铷、铯等的碱金属。空穴供体可以是氯、溴、碘等的卤素原子或卤素分子。或者,氧分子或氨和氯化苄烷铵的分子等可以被用作带电粒子供体。
图5是根据本发明的场效应晶体管的第三实施方案的示意平面图。带电粒子供体7存在于碳纳米管内部。富勒烯可以被用作带电粒子供体。例如,可以采用C60、C70、C76、C78、C82、C84、C92。或者,可以采用被锇络合物或氟进行化学改性的富勒烯。富勒烯可以包含其它的原子或分子。例如,可以采用包含La、Er、Gd、Ho、Nd、Y、Sc、Sc2、或Sc3N的富勒烯。这些富勒烯有效地用作带电粒子供体。
利用基于使用辐照或金属蒸发的制造工艺,电子或空穴可以被馈送到碳纳米管。
工业应用性
根据本发明,由于沟道能够由碳纳米管构成,提供了等效于III-V族化合物的常规场效应晶体管的栅长度,并具有非常大的饱和速度,从而实现了用来控制或放大频率非常高的数字电信号或模拟电信号的场效应晶体管。
Claims (13)
1.一种场效应晶体管,它具有带电粒子在其中行进的沟道、分别连接到沟道部分的源区和漏区、以及电磁耦合到沟道的栅电极,其特征在于,所述沟道由碳纳米管制成。
2.根据权利要求1的场效应晶体管,其特征在于,所述碳纳米管具有半导电的电学特性。
3.根据权利要求1或2的场效应晶体管,其特征在于,所述碳纳米管包括单层碳纳米管或多层碳纳米管,所述碳纳米管是螺旋形的或非螺旋形的。
4.根据权利要求1-3中任何一个的场效应晶体管,其特征在于,带电粒子供体被加入到所述碳纳米管。
5.根据权利要求4的场效应晶体管,其特征在于,所述带电粒子供体包含碱金属。
6.根据权利要求4的场效应晶体管,其特征在于,所述带电粒子供体包含卤素原子或卤素分子。
7.根据权利要求4的场效应晶体管,其特征在于,所述带电粒子供体包含氨或烷基苄基二甲基氯化铵。
8.根据权利要求1-7中任何一个的场效应晶体管,其特征在于,所述碳纳米管包含带电粒子供体。
9.根据权利要求8的场效应晶体管,其特征在于,包含在所述碳纳米管中的所述带电粒子供体包括富勒烯。
10.根据权利要求9的场效应晶体管,其特征在于,所述富勒烯被化学改性。
11.根据权利要求9或10的场效应晶体管,其特征在于,所述富勒烯包含金属或分子。
12.根据权利要求1-11中任何一个的场效应晶体管,其特征在于,所述栅电极经由绝缘膜被连接到所述沟道。
13.根据权利要求1-12中任何一个的场效应晶体管,其特征在于,栅电极包含碳纳米管。
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CN100367480C (zh) * | 2005-03-17 | 2008-02-06 | 上海交通大学 | 由碳纳米管构成沟道的多沟道场效应晶体管的制造方法 |
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CN101287986B (zh) * | 2005-06-14 | 2012-01-18 | 三美电机株式会社 | 场效应晶体管、具备该场效应晶体管的生物传感器及检测方法 |
CN101126735B (zh) * | 2007-09-30 | 2010-06-23 | 董益阳 | 一种场效应晶体管生物传感器的制备方法 |
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EP1411554A4 (en) | 2009-08-05 |
JP2003017508A (ja) | 2003-01-17 |
WO2003005451A1 (en) | 2003-01-16 |
US20040238887A1 (en) | 2004-12-02 |
CN1332450C (zh) | 2007-08-15 |
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