CN1264178A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN1264178A CN1264178A CN00100863.3A CN00100863A CN1264178A CN 1264178 A CN1264178 A CN 1264178A CN 00100863 A CN00100863 A CN 00100863A CN 1264178 A CN1264178 A CN 1264178A
- Authority
- CN
- China
- Prior art keywords
- circuit element
- semiconductor device
- film
- dielectric film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 110
- 239000010409 thin film Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000010897 surface acoustic wave method Methods 0.000 claims description 14
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35759/1999 | 1999-02-15 | ||
JP03575999A JP3465617B2 (ja) | 1999-02-15 | 1999-02-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1264178A true CN1264178A (zh) | 2000-08-23 |
CN1162908C CN1162908C (zh) | 2004-08-18 |
Family
ID=12450785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001008633A Expired - Lifetime CN1162908C (zh) | 1999-02-15 | 2000-02-15 | 半导体装置 |
Country Status (6)
Country | Link |
---|---|
US (3) | US6545354B1 (zh) |
JP (1) | JP3465617B2 (zh) |
KR (1) | KR100533517B1 (zh) |
CN (1) | CN1162908C (zh) |
HK (1) | HK1029443A1 (zh) |
TW (1) | TW455959B (zh) |
Cited By (11)
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---|---|---|---|---|
CN1320646C (zh) * | 2001-04-17 | 2007-06-06 | 卡西欧计算机株式会社 | 半导体器件 |
US7285867B2 (en) | 2002-11-08 | 2007-10-23 | Casio Computer Co., Ltd. | Wiring structure on semiconductor substrate and method of fabricating the same |
CN100383964C (zh) * | 2002-09-20 | 2008-04-23 | 卡西欧计算机株式会社 | 半导体封装及其制造方法 |
CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
CN102194781A (zh) * | 2010-03-19 | 2011-09-21 | 精材科技股份有限公司 | 影像感测元件封装构件及其制作方法 |
CN105284049A (zh) * | 2013-06-13 | 2016-01-27 | 株式会社村田制作所 | 滤波器装置以及双工器 |
CN105575825A (zh) * | 2015-12-24 | 2016-05-11 | 合肥祖安投资合伙企业(有限合伙) | 芯片封装方法及封装组件 |
CN107768320A (zh) * | 2016-08-18 | 2018-03-06 | 恒劲科技股份有限公司 | 电子封装件及其制法 |
CN110473792A (zh) * | 2019-09-02 | 2019-11-19 | 电子科技大学 | 一种用于集成电路晶圆级封装的重构方法 |
CN111788679A (zh) * | 2018-02-13 | 2020-10-16 | 思睿逻辑国际半导体有限公司 | 包含无源电气组件的集成电路的制造 |
WO2022057398A1 (zh) * | 2020-09-16 | 2022-03-24 | 长鑫存储技术有限公司 | 动态随机存储器及其制造方法 |
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US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
US8178435B2 (en) * | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
US7381642B2 (en) * | 2004-09-23 | 2008-06-03 | Megica Corporation | Top layers of metal for integrated circuits |
US6869870B2 (en) * | 1998-12-21 | 2005-03-22 | Megic Corporation | High performance system-on-chip discrete components using post passivation process |
US8421158B2 (en) * | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
US7531417B2 (en) * | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
US6495442B1 (en) | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
JP3465617B2 (ja) | 1999-02-15 | 2003-11-10 | カシオ計算機株式会社 | 半導体装置 |
US6847066B2 (en) * | 2000-08-11 | 2005-01-25 | Oki Electric Industry Co., Ltd. | Semiconductor device |
US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7372161B2 (en) * | 2000-10-18 | 2008-05-13 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
KR20020070739A (ko) * | 2001-03-03 | 2002-09-11 | 삼성전자 주식회사 | 단일 칩 고주파 집적회로 및 그 제조 방법 |
TW563142B (en) * | 2001-07-12 | 2003-11-21 | Hitachi Ltd | Thin film capacitor, and electronic circuit component |
US6759275B1 (en) * | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
JP2003158214A (ja) * | 2001-11-26 | 2003-05-30 | Matsushita Electric Ind Co Ltd | 半導体モジュール |
JP3792635B2 (ja) * | 2001-12-14 | 2006-07-05 | 富士通株式会社 | 電子装置 |
US6673698B1 (en) | 2002-01-19 | 2004-01-06 | Megic Corporation | Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers |
TW503496B (en) * | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
TW544882B (en) * | 2001-12-31 | 2003-08-01 | Megic Corp | Chip package structure and process thereof |
TW584950B (en) | 2001-12-31 | 2004-04-21 | Megic Corp | Chip packaging structure and process thereof |
TW517361B (en) * | 2001-12-31 | 2003-01-11 | Megic Corp | Chip package structure and its manufacture process |
TW577160B (en) * | 2002-02-04 | 2004-02-21 | Casio Computer Co Ltd | Semiconductor device and manufacturing method thereof |
JP3616605B2 (ja) | 2002-04-03 | 2005-02-02 | 沖電気工業株式会社 | 半導体装置 |
JP3529050B2 (ja) * | 2002-07-12 | 2004-05-24 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JP2004129224A (ja) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
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WO2004047174A1 (ja) * | 2002-11-21 | 2004-06-03 | Fujitsu Limited | 高q値インダクタンスを有する半導体集積回路装置 |
JP3808030B2 (ja) * | 2002-11-28 | 2006-08-09 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP3888302B2 (ja) * | 2002-12-24 | 2007-02-28 | カシオ計算機株式会社 | 半導体装置 |
JP2004214561A (ja) * | 2003-01-08 | 2004-07-29 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP3767821B2 (ja) * | 2003-01-22 | 2006-04-19 | 松下電器産業株式会社 | 半導体装置の設計方法 |
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2000
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- 2000-02-10 KR KR10-2000-0006205A patent/KR100533517B1/ko not_active IP Right Cessation
- 2000-02-11 TW TW089102313A patent/TW455959B/zh not_active IP Right Cessation
- 2000-02-15 CN CNB001008633A patent/CN1162908C/zh not_active Expired - Lifetime
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2001
- 2001-01-09 HK HK01100207A patent/HK1029443A1/xx not_active IP Right Cessation
-
2002
- 2002-09-25 US US10/254,222 patent/US6870256B2/en not_active Ceased
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2007
- 2007-03-22 US US11/726,763 patent/USRE41511E1/en not_active Expired - Fee Related
Cited By (14)
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CN1320646C (zh) * | 2001-04-17 | 2007-06-06 | 卡西欧计算机株式会社 | 半导体器件 |
CN100383964C (zh) * | 2002-09-20 | 2008-04-23 | 卡西欧计算机株式会社 | 半导体封装及其制造方法 |
US7285867B2 (en) | 2002-11-08 | 2007-10-23 | Casio Computer Co., Ltd. | Wiring structure on semiconductor substrate and method of fabricating the same |
CN100375255C (zh) * | 2002-11-08 | 2008-03-12 | 卡西欧计算机株式会社 | 半导体装置及其制造方法 |
CN100511640C (zh) * | 2007-03-21 | 2009-07-08 | 威盛电子股份有限公司 | 具有多重导线结构的螺旋电感元件 |
CN102194781B (zh) * | 2010-03-19 | 2015-11-04 | 精材科技股份有限公司 | 影像感测元件封装构件及其制作方法 |
CN102194781A (zh) * | 2010-03-19 | 2011-09-21 | 精材科技股份有限公司 | 影像感测元件封装构件及其制作方法 |
CN105284049A (zh) * | 2013-06-13 | 2016-01-27 | 株式会社村田制作所 | 滤波器装置以及双工器 |
CN105284049B (zh) * | 2013-06-13 | 2018-06-08 | 株式会社村田制作所 | 滤波器装置以及双工器 |
CN105575825A (zh) * | 2015-12-24 | 2016-05-11 | 合肥祖安投资合伙企业(有限合伙) | 芯片封装方法及封装组件 |
CN107768320A (zh) * | 2016-08-18 | 2018-03-06 | 恒劲科技股份有限公司 | 电子封装件及其制法 |
CN111788679A (zh) * | 2018-02-13 | 2020-10-16 | 思睿逻辑国际半导体有限公司 | 包含无源电气组件的集成电路的制造 |
CN110473792A (zh) * | 2019-09-02 | 2019-11-19 | 电子科技大学 | 一种用于集成电路晶圆级封装的重构方法 |
WO2022057398A1 (zh) * | 2020-09-16 | 2022-03-24 | 长鑫存储技术有限公司 | 动态随机存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6870256B2 (en) | 2005-03-22 |
KR100533517B1 (ko) | 2005-12-06 |
HK1029443A1 (en) | 2001-03-30 |
CN1162908C (zh) | 2004-08-18 |
US20030038331A1 (en) | 2003-02-27 |
JP2000235979A (ja) | 2000-08-29 |
TW455959B (en) | 2001-09-21 |
USRE41511E1 (en) | 2010-08-17 |
US6545354B1 (en) | 2003-04-08 |
KR20000071342A (ko) | 2000-11-25 |
JP3465617B2 (ja) | 2003-11-10 |
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