JP5424747B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5424747B2 JP5424747B2 JP2009159560A JP2009159560A JP5424747B2 JP 5424747 B2 JP5424747 B2 JP 5424747B2 JP 2009159560 A JP2009159560 A JP 2009159560A JP 2009159560 A JP2009159560 A JP 2009159560A JP 5424747 B2 JP5424747 B2 JP 5424747B2
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L2224/13001—Core members of the bump connector
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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Description
半導体基板の一主面上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上の第1の配線層に設けられた第1の台座と、
前記第1の配線層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上の第2の配線層に設けられた第2の台座と、を備えた半導体装置であって、
前記第2の絶縁膜にはビアホールが設けられ、前記第1の台座と前記第2の台座は、前記ビアホール内に設けられた導電物により接続され、
前記一主面に垂直な方向から前記一主面に平行な平面に投影した場合に、前記第2の台座が前記第1の台座より大きく、前記第1の台座全体が前記第2の台座の内側にあり、前記ビアホールの開口面積が前記第1の台座の面積よりも大きく、前記ビアホールの側面よりも前記第1の台座の側面が内側にある半導体装置が提供される。
半導体基板の一主面上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上の第1の配線層に設けられた第1の台座と、
前記第1の配線層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上の第2の配線層に設けられた第2の台座と、
前記第2の絶縁膜に設けられたビアホールと、
前記ビアホール内に設けられ、前記第1の台座と前記第2の台座とを接続する導電物と、を備えた半導体装置であって、
前記一主面に垂直な方向から前記一主面に平行な平面に投影した場合に、前記ビアホールの開口面積が前記第1の台座の面積よりも大きく、前記ビアホールの側面よりも前記第1の台座の側面が内側にある半導体装置が提供される。
図1(A)は、参考例の半導体装置を説明するための概略平面図であり、図1(B)は、図1(A)のX1−X1線概略縦断面図、図1(C)は、図1(A)のY1−Y1線概略縦断面図である。
図3(A)は、本発明の好ましい実施の形態の半導体装置を説明するための概略平面図であり、図3(B)は、図3(A)のX3−X3線概略縦断面図、図3(C)は、図3(A)のY3−Y3線概略縦断面図である。
11 一主面
12 電極パッド
14 第1層層間絶縁膜
16 ビアホール
17 側面
18 第1再配線層
181 第1層台座
182 配線
19 上端
20 第2層層間絶縁膜
22 ビアホール
23 側面
24 第2再配線層
241 第2層台座
26 ポスト電極
28 樹脂
30 半田電極
40 クラック
100 ウエハレベルチップサイズパッケージ
Claims (8)
- 半導体基板の一主面上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上の第1の配線層に設けられた第1の台座と、
前記第1の配線層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上の第2の配線層に設けられた第2の台座と、を備えた半導体装置であって、
前記第2の絶縁膜にはビアホールが設けられ、前記第1の台座と前記第2の台座は、前記ビアホール内に設けられた導電物により接続され、
前記一主面に垂直な方向から前記一主面に平行な平面に投影した場合に、前記第2の台座が前記第1の台座より大きく、前記第1の台座全体が前記第2の台座の内側にあり、前記ビアホールの開口面積が前記第1の台座の面積よりも大きく、前記ビアホールの側面よりも前記第1の台座の側面が内側にある半導体装置。 - 前記導電物が前記第2の台座の導電物で構成されている請求項1記載の半導体装置。
- 前記第2の台座上に設けられた柱状電極をさらに備える請求項1または2記載の半導体装置。
- 前記柱状電極上に設けられた半田バンプをさらに備える請求項3記載の半導体装置。
- 半導体基板の一主面上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上の第1の配線層に設けられた第1の台座と、
前記第1の配線層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上の第2の配線層に設けられた第2の台座と、
前記第2の絶縁膜に設けられたビアホールと、
前記ビアホール内に設けられ、前記第1の台座と前記第2の台座とを接続する導電物と、を備えた半導体装置であって、
前記一主面に垂直な方向から前記一主面に平行な平面に投影した場合に、前記ビアホールの開口面積が前記第1の台座の面積よりも大きく、前記ビアホールの側面よりも前記第1の台座の側面が内側にある半導体装置。 - 前記導電物が前記第2の台座の導電物で構成されている請求項5記載の半導体装置。
- 前記第2の台座上に設けられた柱状電極をさらに備える請求項5または6記載の半導体装置。
- 前記柱状電極上に設けられた半田バンプをさらに備える請求項7記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009159560A JP5424747B2 (ja) | 2009-07-06 | 2009-07-06 | 半導体装置 |
US12/801,798 US8742575B2 (en) | 2009-07-06 | 2010-06-25 | Semiconductor device and fabrication method thereof |
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Application Number | Priority Date | Filing Date | Title |
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JP2009159560A JP5424747B2 (ja) | 2009-07-06 | 2009-07-06 | 半導体装置 |
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JP2011014821A JP2011014821A (ja) | 2011-01-20 |
JP5424747B2 true JP5424747B2 (ja) | 2014-02-26 |
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US20130341785A1 (en) * | 2012-06-22 | 2013-12-26 | Lei Fu | Semiconductor chip with expansive underbump metallization structures |
JP2020074352A (ja) * | 2017-03-13 | 2020-05-14 | 三菱電機株式会社 | 半導体装置 |
US12009272B2 (en) * | 2021-11-15 | 2024-06-11 | Texas Instruments Incorporated | Integral redistribution layer for WCSP |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05283467A (ja) * | 1992-03-30 | 1993-10-29 | Nec Corp | 半導体集積回路装置 |
JPH0758711B2 (ja) * | 1992-11-30 | 1995-06-21 | 日本電気株式会社 | 半導体集積回路装置 |
JPH11214504A (ja) * | 1998-01-26 | 1999-08-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6103552A (en) * | 1998-08-10 | 2000-08-15 | Lin; Mou-Shiung | Wafer scale packaging scheme |
JP3465617B2 (ja) | 1999-02-15 | 2003-11-10 | カシオ計算機株式会社 | 半導体装置 |
US6380003B1 (en) * | 1999-12-22 | 2002-04-30 | International Business Machines Corporation | Damascene anti-fuse with slot via |
US6815324B2 (en) * | 2001-02-15 | 2004-11-09 | Megic Corporation | Reliable metal bumps on top of I/O pads after removal of test probe marks |
JP4611943B2 (ja) * | 2006-07-13 | 2011-01-12 | Okiセミコンダクタ株式会社 | 半導体装置 |
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- 2009-07-06 JP JP2009159560A patent/JP5424747B2/ja active Active
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JP2011014821A (ja) | 2011-01-20 |
US20110001234A1 (en) | 2011-01-06 |
US8742575B2 (en) | 2014-06-03 |
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