HK1029443A1 - Semiconductor device. - Google Patents

Semiconductor device.

Info

Publication number
HK1029443A1
HK1029443A1 HK01100207A HK01100207A HK1029443A1 HK 1029443 A1 HK1029443 A1 HK 1029443A1 HK 01100207 A HK01100207 A HK 01100207A HK 01100207 A HK01100207 A HK 01100207A HK 1029443 A1 HK1029443 A1 HK 1029443A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
HK01100207A
Other languages
English (en)
Inventor
Yutaka Aoki
Ichiro Mihara
Takeshi Wakabayashi
Katsumi Watanabe
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of HK1029443A1 publication Critical patent/HK1029443A1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223Capacitor integral with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225Shielding layers formed together with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228Resistive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/141Analog devices
    • H01L2924/1423Monolithic Microwave Integrated Circuit [MMIC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK01100207A 1999-02-15 2001-01-09 Semiconductor device. HK1029443A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03575999A JP3465617B2 (ja) 1999-02-15 1999-02-15 半導体装置

Publications (1)

Publication Number Publication Date
HK1029443A1 true HK1029443A1 (en) 2001-03-30

Family

ID=12450785

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01100207A HK1029443A1 (en) 1999-02-15 2001-01-09 Semiconductor device.

Country Status (6)

Country Link
US (3) US6545354B1 (zh)
JP (1) JP3465617B2 (zh)
KR (1) KR100533517B1 (zh)
CN (1) CN1162908C (zh)
HK (1) HK1029443A1 (zh)
TW (1) TW455959B (zh)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
US8178435B2 (en) * 1998-12-21 2012-05-15 Megica Corporation High performance system-on-chip inductor using post passivation process
US6869870B2 (en) * 1998-12-21 2005-03-22 Megic Corporation High performance system-on-chip discrete components using post passivation process
US6495442B1 (en) 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US7381642B2 (en) * 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US7531417B2 (en) * 1998-12-21 2009-05-12 Megica Corporation High performance system-on-chip passive device using post passivation process
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US8421158B2 (en) * 1998-12-21 2013-04-16 Megica Corporation Chip structure with a passive device and method for forming the same
JP3465617B2 (ja) * 1999-02-15 2003-11-10 カシオ計算機株式会社 半導体装置
SG99939A1 (en) * 2000-08-11 2003-11-27 Casio Computer Co Ltd Semiconductor device
US7372161B2 (en) * 2000-10-18 2008-05-13 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
KR20020070739A (ko) * 2001-03-03 2002-09-11 삼성전자 주식회사 단일 칩 고주파 집적회로 및 그 제조 방법
JP3939504B2 (ja) * 2001-04-17 2007-07-04 カシオ計算機株式会社 半導体装置並びにその製造方法および実装構造
TW563142B (en) * 2001-07-12 2003-11-21 Hitachi Ltd Thin film capacitor, and electronic circuit component
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
JP2003158214A (ja) * 2001-11-26 2003-05-30 Matsushita Electric Ind Co Ltd 半導体モジュール
JP3792635B2 (ja) 2001-12-14 2006-07-05 富士通株式会社 電子装置
TW503496B (en) * 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
TW517361B (en) * 2001-12-31 2003-01-11 Megic Corp Chip package structure and its manufacture process
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
TW577160B (en) * 2002-02-04 2004-02-21 Casio Computer Co Ltd Semiconductor device and manufacturing method thereof
JP3616605B2 (ja) 2002-04-03 2005-02-02 沖電気工業株式会社 半導体装置
JP3529050B2 (ja) * 2002-07-12 2004-05-24 沖電気工業株式会社 半導体装置の製造方法
JP2004129224A (ja) * 2002-07-31 2004-04-22 Murata Mfg Co Ltd 圧電部品およびその製造方法
EP1527480A2 (en) * 2002-08-09 2005-05-04 Casio Computer Co., Ltd. Semiconductor device and method of manufacturing the same
JP4126389B2 (ja) * 2002-09-20 2008-07-30 カシオ計算機株式会社 半導体パッケージの製造方法
US7285867B2 (en) * 2002-11-08 2007-10-23 Casio Computer Co., Ltd. Wiring structure on semiconductor substrate and method of fabricating the same
WO2004047174A1 (ja) * 2002-11-21 2004-06-03 Fujitsu Limited 高q値インダクタンスを有する半導体集積回路装置
JP3808030B2 (ja) * 2002-11-28 2006-08-09 沖電気工業株式会社 半導体装置及びその製造方法
JP3888302B2 (ja) * 2002-12-24 2007-02-28 カシオ計算機株式会社 半導体装置
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP3767821B2 (ja) * 2003-01-22 2006-04-19 松下電器産業株式会社 半導体装置の設計方法
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
TWI236763B (en) * 2003-05-27 2005-07-21 Megic Corp High performance system-on-chip inductor using post passivation process
JP4513302B2 (ja) * 2003-10-07 2010-07-28 カシオ計算機株式会社 半導体装置
US7919864B2 (en) * 2003-10-13 2011-04-05 Stmicroelectronics S.A. Forming of the last metallization level of an integrated circuit
US7459790B2 (en) * 2003-10-15 2008-12-02 Megica Corporation Post passivation interconnection schemes on top of the IC chips
JP2005123378A (ja) * 2003-10-16 2005-05-12 Sony Corp 半導体装置およびその製造方法
CN1624919A (zh) * 2003-12-05 2005-06-08 三星电子株式会社 具有整体连接器接触件的晶片级电子模块及其制造方法
US7394161B2 (en) * 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US7209025B2 (en) * 2003-12-15 2007-04-24 Intel Corporation Multilayer inductor with shielding plane
TWI296154B (en) * 2004-01-27 2008-04-21 Casio Computer Co Ltd Optical sensor module
US7808073B2 (en) * 2004-03-31 2010-10-05 Casio Computer Co., Ltd. Network electronic component, semiconductor device incorporating network electronic component, and methods of manufacturing both
DE102005026229B4 (de) * 2004-06-08 2006-12-07 Samsung Electronics Co., Ltd., Suwon Halbleiter-Package, das ein Neuverteilungsmuster enthält, und Verfahren zu dessen Herstellung
US7423346B2 (en) * 2004-09-09 2008-09-09 Megica Corporation Post passivation interconnection process and structures
US7355282B2 (en) 2004-09-09 2008-04-08 Megica Corporation Post passivation interconnection process and structures
US8008775B2 (en) 2004-09-09 2011-08-30 Megica Corporation Post passivation interconnection structures
US7521805B2 (en) * 2004-10-12 2009-04-21 Megica Corp. Post passivation interconnection schemes on top of the IC chips
JP4431747B2 (ja) 2004-10-22 2010-03-17 富士通株式会社 半導体装置の製造方法
US20060091496A1 (en) * 2004-10-28 2006-05-04 Hewlett-Packard Development Company, Lp Metal-insulator-metal device
KR100642643B1 (ko) * 2005-03-18 2006-11-10 삼성전자주식회사 내부회로의 전원/접지선들과 직접 접속되는 재배치된전원/접지선들을 갖는 반도체 칩들 및 그 제조방법들
US8384189B2 (en) 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
JP4784141B2 (ja) * 2005-04-27 2011-10-05 カシオ計算機株式会社 半導体装置の製造方法
US7468545B2 (en) * 2005-05-06 2008-12-23 Megica Corporation Post passivation structure for a semiconductor device and packaging process for same
US7470927B2 (en) * 2005-05-18 2008-12-30 Megica Corporation Semiconductor chip with coil element over passivation layer
US7582556B2 (en) 2005-06-24 2009-09-01 Megica Corporation Circuitry component and method for forming the same
CN1901162B (zh) * 2005-07-22 2011-04-20 米辑电子股份有限公司 连续电镀制作线路组件的方法及线路组件结构
US7473999B2 (en) * 2005-09-23 2009-01-06 Megica Corporation Semiconductor chip and process for forming the same
JP2007134359A (ja) * 2005-11-08 2007-05-31 Casio Comput Co Ltd 半導体装置およびその製造方法
US20080088016A1 (en) * 2006-02-14 2008-04-17 Ming-Ling Ho Chip with bump structure
US20070187821A1 (en) * 2006-02-14 2007-08-16 Ming-Ling Ho Chip with bump structure
JP5138260B2 (ja) * 2006-05-19 2013-02-06 株式会社テラミクロス チップ型電子部品
US7449772B2 (en) 2006-05-19 2008-11-11 Casio Computer Co., Ltd. Chip-type electronic component including thin-film circuit elements
JP2008159820A (ja) * 2006-12-22 2008-07-10 Tdk Corp 電子部品の一括実装方法、及び電子部品内蔵基板の製造方法
US8749021B2 (en) * 2006-12-26 2014-06-10 Megit Acquisition Corp. Voltage regulator integrated with semiconductor chip
TWI336922B (en) * 2007-01-12 2011-02-01 Via Tech Inc Spiral inductor with multi-trace structure
JP2008226945A (ja) * 2007-03-09 2008-09-25 Casio Comput Co Ltd 半導体装置およびその製造方法
CN100511640C (zh) * 2007-03-21 2009-07-08 威盛电子股份有限公司 具有多重导线结构的螺旋电感元件
JP4679553B2 (ja) * 2007-07-23 2011-04-27 イビデン株式会社 半導体チップ
JP4659805B2 (ja) * 2007-10-05 2011-03-30 Okiセミコンダクタ株式会社 半導体装置
TWI379322B (en) * 2007-10-12 2012-12-11 Via Tech Inc Spiral inductor device
US8253523B2 (en) * 2007-10-12 2012-08-28 Via Technologies, Inc. Spiral inductor device
DE202008005708U1 (de) * 2008-04-24 2008-07-10 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
US8196533B2 (en) * 2008-10-27 2012-06-12 Kentucky-Tennessee Clay Co. Methods for operating a fluidized-bed reactor
KR101332228B1 (ko) 2008-12-26 2013-11-25 메키트 에퀴지션 코포레이션 전력 관리 집적 회로들을 갖는 칩 패키지들 및 관련 기술들
JP2010232230A (ja) * 2009-03-25 2010-10-14 Casio Computer Co Ltd 半導体装置およびその製造方法
JP5424747B2 (ja) 2009-07-06 2014-02-26 ラピスセミコンダクタ株式会社 半導体装置
JP2009246404A (ja) * 2009-07-30 2009-10-22 Casio Comput Co Ltd 半導体装置の製造方法
EP2302675A1 (en) * 2009-09-29 2011-03-30 STMicroelectronics (Grenoble 2) SAS Electronic circuit with an inductor
TWI508273B (zh) * 2010-03-19 2015-11-11 Xintec Inc 影像感測元件封裝構件及其製作方法
JP5486376B2 (ja) * 2010-03-31 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置
US20130146345A1 (en) * 2011-12-12 2013-06-13 Kazuki KAJIHARA Printed wiring board and method for manufacturing the same
US9171798B2 (en) * 2013-01-25 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for transmission lines in packages
KR20160006773A (ko) * 2013-06-13 2016-01-19 가부시키가이샤 무라타 세이사쿠쇼 필터장치 및 듀플렉서
JP6019367B2 (ja) * 2015-01-13 2016-11-02 株式会社野田スクリーン 半導体装置
US10707171B2 (en) * 2015-12-22 2020-07-07 Intel Corporation Ultra small molded module integrated with die by module-on-wafer assembly
CN105575825A (zh) * 2015-12-24 2016-05-11 合肥祖安投资合伙企业(有限合伙) 芯片封装方法及封装组件
CN107768320A (zh) * 2016-08-18 2018-03-06 恒劲科技股份有限公司 电子封装件及其制法
CN111788679A (zh) * 2018-02-13 2020-10-16 思睿逻辑国际半导体有限公司 包含无源电气组件的集成电路的制造
US11315891B2 (en) 2018-03-23 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor packages having a die with an encapsulant
CN110473792B (zh) * 2019-09-02 2021-04-02 电子科技大学 一种用于集成电路晶圆级封装的重构方法
CN114267676B (zh) * 2020-09-16 2024-09-24 长鑫存储技术有限公司 动态随机存储器及其制造方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322778A (en) 1980-01-25 1982-03-30 International Business Machines Corp. High performance semiconductor package assembly
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
US4811082A (en) 1986-11-12 1989-03-07 International Business Machines Corporation High performance integrated circuit packaging structure
DE3641299A1 (de) * 1986-12-03 1988-06-16 Philips Patentverwaltung Integrierte halbleiter-schaltung mit mehrlagenverdrahtung
JPH02254748A (ja) * 1989-03-28 1990-10-15 Seiko Epson Corp 半導体装置
US5317433A (en) 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JP3285919B2 (ja) 1992-02-05 2002-05-27 株式会社東芝 半導体装置
JPH05326315A (ja) 1992-05-25 1993-12-10 Itochu Fine Chem Kk 薄膜コンデンサおよびその製造装置
WO1994017558A1 (en) 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
US5510758A (en) * 1993-04-07 1996-04-23 Matsushita Electric Industrial Co., Ltd. Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps
JPH0878626A (ja) * 1994-09-06 1996-03-22 Oki Electric Ind Co Ltd 半導体集積回路
US5530288A (en) 1994-10-12 1996-06-25 International Business Machines Corporation Passive interposer including at least one passive electronic component
JP3393420B2 (ja) * 1995-02-28 2003-04-07 ソニー株式会社 半導体装置
US6124606A (en) 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
JP3076507B2 (ja) * 1995-06-13 2000-08-14 松下電子工業株式会社 半導体装置、半導体集積回路装置及びその製造方法
JP2904086B2 (ja) 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
GB9617885D0 (en) * 1996-08-28 1996-10-09 Philips Electronics Nv Electronic device manufacture
EP0837503A3 (en) * 1996-10-16 1998-07-15 Digital Equipment Corporation Reference plane metallization on an integrated circuit
US6331722B1 (en) 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
US5982018A (en) 1997-05-23 1999-11-09 Micron Technology, Inc. Thin film capacitor coupons for memory modules and multi-chip modules
JPH1197525A (ja) * 1997-09-19 1999-04-09 Hitachi Ltd 半導体装置およびその製造方法
US5928968A (en) * 1997-12-22 1999-07-27 Vlsi Technology, Inc. Semiconductor pressure transducer structures and methods for making the same
KR100563122B1 (ko) * 1998-01-30 2006-03-21 다이요 유덴 가부시키가이샤 하이브리드 모듈 및 그 제조방법 및 그 설치방법
US6108212A (en) 1998-06-05 2000-08-22 Motorola, Inc. Surface-mount device package having an integral passive component
US6140155A (en) * 1998-12-24 2000-10-31 Casio Computer Co., Ltd. Method of manufacturing semiconductor device using dry photoresist film
US6274937B1 (en) 1999-02-01 2001-08-14 Micron Technology, Inc. Silicon multi-chip module packaging with integrated passive components and method of making
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
JP3465617B2 (ja) 1999-02-15 2003-11-10 カシオ計算機株式会社 半導体装置
US6031293A (en) * 1999-04-26 2000-02-29 United Microelectronics Corporation Package-free bonding pad structure
JP2001060664A (ja) 1999-08-23 2001-03-06 Mitsubishi Electric Corp 半導体装置
SG99939A1 (en) 2000-08-11 2003-11-27 Casio Computer Co Ltd Semiconductor device

Also Published As

Publication number Publication date
TW455959B (en) 2001-09-21
US6870256B2 (en) 2005-03-22
USRE41511E1 (en) 2010-08-17
KR100533517B1 (ko) 2005-12-06
CN1162908C (zh) 2004-08-18
CN1264178A (zh) 2000-08-23
JP3465617B2 (ja) 2003-11-10
US20030038331A1 (en) 2003-02-27
JP2000235979A (ja) 2000-08-29
US6545354B1 (en) 2003-04-08
KR20000071342A (ko) 2000-11-25

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160215