CN1291495C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1291495C CN1291495C CNB2004100018529A CN200410001852A CN1291495C CN 1291495 C CN1291495 C CN 1291495C CN B2004100018529 A CNB2004100018529 A CN B2004100018529A CN 200410001852 A CN200410001852 A CN 200410001852A CN 1291495 C CN1291495 C CN 1291495C
- Authority
- CN
- China
- Prior art keywords
- electrode
- hole
- semiconductor device
- wiring layer
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 239000003990 capacitor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 208000005189 Embolism Diseases 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003008286 | 2003-01-16 | ||
JP008286/2003 | 2003-01-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101320271A Division CN100499106C (zh) | 2003-01-16 | 2004-01-14 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1518106A CN1518106A (zh) | 2004-08-04 |
CN1291495C true CN1291495C (zh) | 2006-12-20 |
Family
ID=32709152
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101320271A Expired - Fee Related CN100499106C (zh) | 2003-01-16 | 2004-01-14 | 半导体器件 |
CNB2004100018529A Expired - Fee Related CN1291495C (zh) | 2003-01-16 | 2004-01-14 | 半导体器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101320271A Expired - Fee Related CN100499106C (zh) | 2003-01-16 | 2004-01-14 | 半导体器件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7095072B2 (zh) |
CN (2) | CN100499106C (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4615962B2 (ja) | 2004-10-22 | 2011-01-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20060072412A (ko) * | 2004-12-23 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 고효율의 수평 커패시턴스를 갖는 금속간 커패시터 |
KR100685877B1 (ko) * | 2004-12-29 | 2007-02-23 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US7502218B2 (en) | 2005-11-09 | 2009-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-terminal capacitor |
US20070152332A1 (en) * | 2006-01-04 | 2007-07-05 | International Business Machines Corporation | Single or dual damascene via level wirings and/or devices, and methods of fabricating same |
US8330251B2 (en) * | 2006-06-26 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure for reducing mismatch effects |
JP5141069B2 (ja) * | 2007-03-28 | 2013-02-13 | 株式会社リコー | 半導体装置 |
US8207569B2 (en) * | 2007-06-06 | 2012-06-26 | Qualcomm, Incorporated | Intertwined finger capacitors |
US8022458B2 (en) | 2007-10-08 | 2011-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitors integrated with metal gate formation |
US7626802B2 (en) * | 2007-10-19 | 2009-12-01 | Oh Young Joo | Metal capacitor and manufacturing method thereof |
US8120086B2 (en) * | 2008-09-30 | 2012-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Low leakage capacitors including portions in inter-layer dielectrics |
US8378450B2 (en) * | 2009-08-27 | 2013-02-19 | International Business Machines Corporation | Interdigitated vertical parallel capacitor |
JP5493166B2 (ja) * | 2009-12-03 | 2014-05-14 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN106449605B (zh) * | 2015-08-12 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | Mim电容结构 |
JP6449760B2 (ja) * | 2015-12-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10403440B2 (en) * | 2016-12-02 | 2019-09-03 | Carver Scientific, Inc. | Capacitive energy storage device |
CN117936510A (zh) * | 2022-10-17 | 2024-04-26 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216343A (ja) * | 1999-01-27 | 2000-08-04 | Nec Corp | 半導体集積回路 |
US6822312B2 (en) | 2000-04-07 | 2004-11-23 | Koninklijke Philips Electronics N.V. | Interdigitated multilayer capacitor structure for deep sub-micron CMOS |
JP2001358295A (ja) | 2000-06-14 | 2001-12-26 | Matsushita Electric Ind Co Ltd | 可変容量素子および可変容量素子内蔵集積回路 |
US6635916B2 (en) | 2000-08-31 | 2003-10-21 | Texas Instruments Incorporated | On-chip capacitor |
US6690570B2 (en) | 2000-09-14 | 2004-02-10 | California Institute Of Technology | Highly efficient capacitor structures with enhanced matching properties |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
JP4231212B2 (ja) | 2001-04-26 | 2009-02-25 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP4947849B2 (ja) | 2001-05-30 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2004
- 2004-01-09 US US10/753,325 patent/US7095072B2/en not_active Expired - Lifetime
- 2004-01-14 CN CNB2006101320271A patent/CN100499106C/zh not_active Expired - Fee Related
- 2004-01-14 CN CNB2004100018529A patent/CN1291495C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100499106C (zh) | 2009-06-10 |
US7095072B2 (en) | 2006-08-22 |
CN1953170A (zh) | 2007-04-25 |
CN1518106A (zh) | 2004-08-04 |
US20040140487A1 (en) | 2004-07-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20101119 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101119 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 Termination date: 20200114 |
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CF01 | Termination of patent right due to non-payment of annual fee |