CN1263040C - 通过磁场的施加进行数据写入的薄膜磁性体存储装置 - Google Patents

通过磁场的施加进行数据写入的薄膜磁性体存储装置 Download PDF

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Publication number
CN1263040C
CN1263040C CNB02147057XA CN02147057A CN1263040C CN 1263040 C CN1263040 C CN 1263040C CN B02147057X A CNB02147057X A CN B02147057XA CN 02147057 A CN02147057 A CN 02147057A CN 1263040 C CN1263040 C CN 1263040C
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China
Prior art keywords
wiring
power supply
magnetic
data
wirings
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Expired - Fee Related
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CNB02147057XA
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Chinese (zh)
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CN1414560A (zh
Inventor
日高秀人
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Renesas Electronics Corp
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Mitsubishi Electric Corp
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Publication of CN1414560A publication Critical patent/CN1414560A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1697—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB02147057XA 2001-10-25 2002-10-25 通过磁场的施加进行数据写入的薄膜磁性体存储装置 Expired - Fee Related CN1263040C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP327690/2001 2001-10-25
JP327690/01 2001-10-25
JP2001327690 2001-10-25
JP70583/02 2002-03-14
JP70583/2002 2002-03-14
JP2002070583A JP4570313B2 (ja) 2001-10-25 2002-03-14 薄膜磁性体記憶装置

Publications (2)

Publication Number Publication Date
CN1414560A CN1414560A (zh) 2003-04-30
CN1263040C true CN1263040C (zh) 2006-07-05

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Family Applications (1)

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CNB02147057XA Expired - Fee Related CN1263040C (zh) 2001-10-25 2002-10-25 通过磁场的施加进行数据写入的薄膜磁性体存储装置

Country Status (6)

Country Link
US (4) US6795335B2 (OSRAM)
JP (1) JP4570313B2 (OSRAM)
KR (1) KR100501127B1 (OSRAM)
CN (1) CN1263040C (OSRAM)
DE (1) DE10249869B4 (OSRAM)
TW (1) TW594730B (OSRAM)

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US7136298B2 (en) * 2004-06-30 2006-11-14 Stmicroelectronics, Inc. Magnetic random access memory array with global write lines
US7301800B2 (en) * 2004-06-30 2007-11-27 Stmicroelectronics, Inc. Multi-bit magnetic random access memory element
US7262069B2 (en) * 2005-06-07 2007-08-28 Freescale Semiconductor, Inc. 3-D inductor and transformer devices in MRAM embedded integrated circuits
JP4779608B2 (ja) * 2005-11-30 2011-09-28 Ｔｄｋ株式会社 磁気メモリ
EP1898425A1 (fr) * 2006-09-05 2008-03-12 Stmicroelectronics Sa Mémoire à changement de phase comprenant un décodeur de colonne basse tension
JP2008157854A (ja) * 2006-12-26 2008-07-10 Seiko Instruments Inc 半導体磁気センサ
US7508702B2 (en) * 2007-04-17 2009-03-24 Macronix International Co., Ltd. Programming method of magnetic random access memory
JP2009043804A (ja) * 2007-08-07 2009-02-26 Panasonic Corp 半導体記憶装置、メモリ搭載ｌｓｉ、及び半導体記憶装置の製造方法
JP4698712B2 (ja) * 2008-09-05 2011-06-08 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4945592B2 (ja) * 2009-03-13 2012-06-06 株式会社東芝 半導体記憶装置
US9532442B2 (en) 2009-08-19 2016-12-27 Nec Corporation Feed line structure, circuit board using same, and EMI noise reduction method
JP5116816B2 (ja) * 2010-07-28 2013-01-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置および磁気メモリ装置
CN105393306B (zh) * 2013-06-29 2018-08-21 英特尔公司 用于存储器和逻辑单元的磁性元件
KR102116879B1 (ko) * 2014-05-19 2020-06-01 에스케이하이닉스 주식회사 전자 장치
US11075656B2 (en) 2019-07-16 2021-07-27 Microsoft Technology Licensing, Llc Bit error reduction of communication systems using error correction
US11086719B2 (en) * 2019-07-16 2021-08-10 Microsoft Technology Licensing, Llc Use of error correction codes to prevent errors in neighboring storage
US10911284B1 (en) 2019-07-16 2021-02-02 Microsoft Technology Licensing, Llc Intelligent optimization of communication systems utilizing error correction
US11172455B2 (en) 2019-07-16 2021-11-09 Microsoft Technology Licensing, Llc Peak to average power output reduction of RF systems utilizing error correction
US11031961B2 (en) 2019-07-16 2021-06-08 Microsoft Technology Licensing, Llc Smart symbol changes for optimization of communications using error correction
US11044044B2 (en) 2019-07-16 2021-06-22 Microsoft Technology Licensing, Llc Peak to average power ratio reduction of optical systems utilizing error correction
US11063696B2 (en) 2019-07-16 2021-07-13 Microsoft Technology Licensing, Llc Increasing average power levels to reduce peak-to-average power levels using error correction codes
US10911141B1 (en) 2019-07-30 2021-02-02 Microsoft Technology Licensing, Llc Dynamically selecting a channel model for optical communications
JP2024130130A (ja) * 2023-03-14 2024-09-30 キオクシア株式会社 記憶装置

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Also Published As

Publication number Publication date
TW594730B (en) 2004-06-21
JP2003204044A (ja) 2003-07-18
US20030081450A1 (en) 2003-05-01
DE10249869B4 (de) 2006-08-31
US7233519B2 (en) 2007-06-19
US20070195589A1 (en) 2007-08-23
US20050030829A1 (en) 2005-02-10
JP4570313B2 (ja) 2010-10-27
DE10249869A1 (de) 2003-05-15
US6795335B2 (en) 2004-09-21
KR100501127B1 (ko) 2005-07-18
US20060158929A1 (en) 2006-07-20
US6970377B2 (en) 2005-11-29
KR20030034021A (ko) 2003-05-01
US7315468B2 (en) 2008-01-01
CN1414560A (zh) 2003-04-30

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SE01 Entry into force of request for substantive examination
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Owner name: RENESAS ELECTRONICS CORPORATION

Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP.

Effective date: 20140416

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TR01 Transfer of patent right

Effective date of registration: 20140416

Address after: Kawasaki, Kanagawa, Japan

Patentee after: Renesas Electronics Corporation

Address before: Tokyo, Japan, Japan

Patentee before: Missubishi Electric Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060705

Termination date: 20161025