CN1252727C - 包含具有磁隧道结的存储单元的薄膜磁性体存储装置 - Google Patents
包含具有磁隧道结的存储单元的薄膜磁性体存储装置 Download PDFInfo
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- CN1252727C CN1252727C CNB021322945A CN02132294A CN1252727C CN 1252727 C CN1252727 C CN 1252727C CN B021322945 A CNB021322945 A CN B021322945A CN 02132294 A CN02132294 A CN 02132294A CN 1252727 C CN1252727 C CN 1252727C
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP267778/2001 | 2001-09-04 | ||
JP2001267778A JP4780874B2 (ja) | 2001-09-04 | 2001-09-04 | 薄膜磁性体記憶装置 |
JP267778/01 | 2001-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1404066A CN1404066A (zh) | 2003-03-19 |
CN1252727C true CN1252727C (zh) | 2006-04-19 |
Family
ID=19093866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021322945A Expired - Fee Related CN1252727C (zh) | 2001-09-04 | 2002-09-04 | 包含具有磁隧道结的存储单元的薄膜磁性体存储装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6999341B2 (zh) |
JP (1) | JP4780874B2 (zh) |
KR (1) | KR100540403B1 (zh) |
CN (1) | CN1252727C (zh) |
DE (1) | DE10235467A1 (zh) |
TW (1) | TW567490B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4780874B2 (ja) * | 2001-09-04 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP2003242771A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 半導体記憶装置 |
US6870759B2 (en) * | 2002-12-09 | 2005-03-22 | Applied Spintronics Technology, Inc. | MRAM array with segmented magnetic write lines |
JP4008857B2 (ja) * | 2003-03-24 | 2007-11-14 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
WO2005041270A2 (en) * | 2003-09-23 | 2005-05-06 | Applied Spintronics Technology, Inc. | Mram array with segmented word and bit lines |
US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
KR100527536B1 (ko) * | 2003-12-24 | 2005-11-09 | 주식회사 하이닉스반도체 | 마그네틱 램 |
JP3935150B2 (ja) * | 2004-01-20 | 2007-06-20 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4553620B2 (ja) * | 2004-04-06 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US7372728B2 (en) * | 2004-06-16 | 2008-05-13 | Stmicroelectronics, Inc. | Magnetic random access memory array having bit/word lines for shared write select and read operations |
JP4911027B2 (ja) | 2005-02-09 | 2012-04-04 | 日本電気株式会社 | トグル型磁気ランダムアクセスメモリ及びトグル型磁気ランダムアクセスメモリの書き込み方法 |
KR100688540B1 (ko) * | 2005-03-24 | 2007-03-02 | 삼성전자주식회사 | 메모리 셀의 집적도를 향상시킨 반도체 메모리 장치 |
KR100655438B1 (ko) | 2005-08-25 | 2006-12-08 | 삼성전자주식회사 | 자기 기억 소자 및 그 형성 방법 |
WO2007032257A1 (ja) | 2005-09-14 | 2007-03-22 | Nec Corporation | 磁気ランダムアクセスメモリの波形整形回路 |
KR100735748B1 (ko) * | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
KR100899392B1 (ko) | 2007-08-20 | 2009-05-27 | 주식회사 하이닉스반도체 | 리프레시 특성 테스트 회로 및 이를 이용한 리프레시 특성테스트 방법 |
US7872907B2 (en) | 2007-12-28 | 2011-01-18 | Renesas Electronics Corporation | Semiconductor device |
JP5222619B2 (ja) | 2008-05-02 | 2013-06-26 | 株式会社日立製作所 | 半導体装置 |
KR100950485B1 (ko) * | 2008-06-27 | 2010-03-31 | 주식회사 하이닉스반도체 | 리프레시 특성 테스트 회로 |
WO2010041632A1 (ja) * | 2008-10-06 | 2010-04-15 | 株式会社日立製作所 | 半導体装置 |
US8040719B2 (en) * | 2008-11-26 | 2011-10-18 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices having bit line discharge control circuits therein that provide equivalent bit line discharge control |
JP5915121B2 (ja) * | 2011-11-30 | 2016-05-11 | 凸版印刷株式会社 | 抵抗変化型不揮発性メモリ |
KR102017736B1 (ko) * | 2012-12-20 | 2019-10-21 | 에스케이하이닉스 주식회사 | 코어 회로, 메모리 및 이를 포함하는 메모리 시스템 |
US8929153B1 (en) * | 2013-08-23 | 2015-01-06 | Qualcomm Incorporated | Memory with multiple word line design |
CN107039067A (zh) * | 2015-07-15 | 2017-08-11 | 中国科学院微电子研究所 | 一种存储器及读写方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPH03235290A (ja) * | 1990-02-09 | 1991-10-21 | Mitsubishi Electric Corp | 階層的な行選択線を有する半導体記憶装置 |
JP3392657B2 (ja) * | 1996-09-26 | 2003-03-31 | 株式会社東芝 | 半導体記憶装置 |
JPH10163451A (ja) * | 1996-12-02 | 1998-06-19 | Hitachi Ltd | 半導体記憶装置 |
JP3252895B2 (ja) * | 1997-11-07 | 2002-02-04 | 日本電気株式会社 | 半導体記憶装置及びその駆動方法 |
US6418043B1 (en) * | 1997-12-12 | 2002-07-09 | Hyundai Electronics Industries Co., Ltd. | Circuit for driving nonvolatile ferroelectric memory |
US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
US6111781A (en) * | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
US6191972B1 (en) * | 1999-04-30 | 2001-02-20 | Nec Corporation | Magnetic random access memory circuit |
US6249464B1 (en) * | 1999-12-15 | 2001-06-19 | Cypress Semiconductor Corp. | Block redundancy in ultra low power memory circuits |
JP3913971B2 (ja) * | 1999-12-16 | 2007-05-09 | 株式会社東芝 | 磁気メモリ装置 |
US6331943B1 (en) * | 2000-08-28 | 2001-12-18 | Motorola, Inc. | MTJ MRAM series-parallel architecture |
JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
DE10054520C1 (de) | 2000-11-03 | 2002-03-21 | Infineon Technologies Ag | Datenspeicher mit mehreren Bänken |
JP4726292B2 (ja) * | 2000-11-14 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4818519B2 (ja) * | 2001-02-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
US6490217B1 (en) * | 2001-05-23 | 2002-12-03 | International Business Machines Corporation | Select line architecture for magnetic random access memories |
JP4780878B2 (ja) * | 2001-08-02 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4780874B2 (ja) * | 2001-09-04 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
-
2001
- 2001-09-04 JP JP2001267778A patent/JP4780874B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-31 US US10/207,900 patent/US6999341B2/en not_active Expired - Lifetime
- 2002-08-02 DE DE10235467A patent/DE10235467A1/de not_active Ceased
- 2002-08-22 TW TW091119032A patent/TW567490B/zh not_active IP Right Cessation
- 2002-09-03 KR KR1020020052872A patent/KR100540403B1/ko not_active IP Right Cessation
- 2002-09-04 CN CNB021322945A patent/CN1252727C/zh not_active Expired - Fee Related
-
2005
- 2005-12-22 US US11/313,957 patent/US20060120150A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1404066A (zh) | 2003-03-19 |
TW567490B (en) | 2003-12-21 |
US20060120150A1 (en) | 2006-06-08 |
US6999341B2 (en) | 2006-02-14 |
US20030043620A1 (en) | 2003-03-06 |
DE10235467A1 (de) | 2003-04-03 |
JP4780874B2 (ja) | 2011-09-28 |
KR20030021133A (ko) | 2003-03-12 |
JP2003077267A (ja) | 2003-03-14 |
KR100540403B1 (ko) | 2006-01-16 |
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP. Effective date: 20140416 |
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Effective date of registration: 20140416 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Missubishi Electric Co., Ltd. |
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