CN1218399C - 绝缘栅双极晶体管 - Google Patents

绝缘栅双极晶体管 Download PDF

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Publication number
CN1218399C
CN1218399C CN011190094A CN01119009A CN1218399C CN 1218399 C CN1218399 C CN 1218399C CN 011190094 A CN011190094 A CN 011190094A CN 01119009 A CN01119009 A CN 01119009A CN 1218399 C CN1218399 C CN 1218399C
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CN
China
Prior art keywords
layer
type
semiconductor substrate
electrode
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN011190094A
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English (en)
Chinese (zh)
Other versions
CN1324111A (zh
Inventor
田中雅浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1324111A publication Critical patent/CN1324111A/zh
Application granted granted Critical
Publication of CN1218399C publication Critical patent/CN1218399C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
CN011190094A 2000-05-15 2001-05-15 绝缘栅双极晶体管 Expired - Fee Related CN1218399C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP141914/2000 2000-05-15
JP2000141914A JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置

Publications (2)

Publication Number Publication Date
CN1324111A CN1324111A (zh) 2001-11-28
CN1218399C true CN1218399C (zh) 2005-09-07

Family

ID=18648965

Family Applications (1)

Application Number Title Priority Date Filing Date
CN011190094A Expired - Fee Related CN1218399C (zh) 2000-05-15 2001-05-15 绝缘栅双极晶体管

Country Status (6)

Country Link
US (2) US20010040255A1 (enExample)
EP (1) EP1156532A3 (enExample)
JP (1) JP3727827B2 (enExample)
KR (1) KR100391560B1 (enExample)
CN (1) CN1218399C (enExample)
TW (1) TWI285955B (enExample)

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JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
CN100461619C (zh) * 2004-12-24 2009-02-11 立积电子股份有限公司 功率放大器及其形成方法
JP2006210606A (ja) * 2005-01-27 2006-08-10 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2006228961A (ja) * 2005-02-17 2006-08-31 Toyota Central Res & Dev Lab Inc 半導体装置
DE102005032074B4 (de) * 2005-07-08 2007-07-26 Infineon Technologies Austria Ag Halbleiterbauelement mit Feldstopp
JP2008042013A (ja) * 2006-08-08 2008-02-21 Sanyo Electric Co Ltd 半導体装置の製造方法
DE102007057728B4 (de) * 2007-11-30 2014-04-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
WO2012042640A1 (ja) * 2010-09-30 2012-04-05 株式会社日立製作所 半導体装置
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9478646B2 (en) 2011-07-27 2016-10-25 Alpha And Omega Semiconductor Incorporated Methods for fabricating anode shorted field stop insulated gate bipolar transistor
JP5979993B2 (ja) * 2012-06-11 2016-08-31 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔの製造方法
WO2015049788A1 (ja) * 2013-10-04 2015-04-09 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換器
JP2016201563A (ja) * 2016-07-26 2016-12-01 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔ
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法

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US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
JPS6223170A (ja) 1985-07-23 1987-01-31 Nec Corp 電力用縦型電界効果トランジスタの製造方法
US5166770A (en) * 1987-04-15 1992-11-24 Texas Instruments Incorporated Silicided structures having openings therein
JPS6447066U (enExample) 1987-09-17 1989-03-23
JP2706120B2 (ja) * 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
DE58909474D1 (de) 1988-02-24 1995-11-30 Siemens Ag Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors.
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
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JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH0661495A (ja) * 1992-08-07 1994-03-04 Hitachi Ltd 半導体装置及びその製法
JP2984478B2 (ja) * 1992-08-15 1999-11-29 株式会社東芝 伝導度変調型半導体装置及びその製造方法
JPH06318706A (ja) * 1993-03-08 1994-11-15 Fuji Electric Co Ltd 半導体装置
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
JPH0758322A (ja) 1993-08-13 1995-03-03 Toshiba Corp 半導体装置及びその製造方法
EP0696066A3 (en) * 1994-06-30 1998-06-24 Hitachi, Ltd. Semiconductor switching device and power converter
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
JP3488772B2 (ja) * 1996-01-16 2004-01-19 三菱電機株式会社 半導体装置
US5985708A (en) * 1996-03-13 1999-11-16 Kabushiki Kaisha Toshiba Method of manufacturing vertical power device
DE19710731B4 (de) 1996-03-15 2006-02-16 Fairchild Korea Semiconductor Ltd., Puchon Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US5851857A (en) * 1996-09-04 1998-12-22 Ixys Corporation High voltage power MOS device
DE19731495C2 (de) * 1997-07-22 1999-05-20 Siemens Ag Durch Feldeffekt steuerbarer Bipolartransistor und Verfahren zu seiner Herstellung
KR100505562B1 (ko) * 1998-08-10 2005-10-26 페어차일드코리아반도체 주식회사 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
JP2003069019A (ja) 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
JP3984227B2 (ja) 2004-01-15 2007-10-03 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JP3727827B2 (ja) 2005-12-21
CN1324111A (zh) 2001-11-28
TWI285955B (en) 2007-08-21
KR100391560B1 (ko) 2003-07-12
EP1156532A2 (en) 2001-11-21
EP1156532A3 (en) 2003-11-26
US20010040255A1 (en) 2001-11-15
US20060125005A1 (en) 2006-06-15
KR20010106231A (ko) 2001-11-29
JP2001326353A (ja) 2001-11-22
US7271040B2 (en) 2007-09-18

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Granted publication date: 20050907