KR100391560B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100391560B1
KR100391560B1 KR10-2001-0025564A KR20010025564A KR100391560B1 KR 100391560 B1 KR100391560 B1 KR 100391560B1 KR 20010025564 A KR20010025564 A KR 20010025564A KR 100391560 B1 KR100391560 B1 KR 100391560B1
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KR
South Korea
Prior art keywords
layer
type
semiconductor substrate
electrode
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0025564A
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English (en)
Korean (ko)
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KR20010106231A (ko
Inventor
다나카마사히로
Original Assignee
가부시끼가이샤 도시바
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Publication of KR20010106231A publication Critical patent/KR20010106231A/ko
Application granted granted Critical
Publication of KR100391560B1 publication Critical patent/KR100391560B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
KR10-2001-0025564A 2000-05-15 2001-05-10 반도체장치 Expired - Fee Related KR100391560B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000141914A JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置
JP2000-141914 2000-05-15

Publications (2)

Publication Number Publication Date
KR20010106231A KR20010106231A (ko) 2001-11-29
KR100391560B1 true KR100391560B1 (ko) 2003-07-12

Family

ID=18648965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0025564A Expired - Fee Related KR100391560B1 (ko) 2000-05-15 2001-05-10 반도체장치

Country Status (6)

Country Link
US (2) US20010040255A1 (enExample)
EP (1) EP1156532A3 (enExample)
JP (1) JP3727827B2 (enExample)
KR (1) KR100391560B1 (enExample)
CN (1) CN1218399C (enExample)
TW (1) TWI285955B (enExample)

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US7348227B1 (en) * 1995-03-23 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE10250575B4 (de) * 2002-10-30 2010-04-15 Infineon Technologies Ag IGBT mit monolithisch integrierter antiparalleler Diode
JP2005057235A (ja) 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
CN100461619C (zh) * 2004-12-24 2009-02-11 立积电子股份有限公司 功率放大器及其形成方法
JP2006210606A (ja) * 2005-01-27 2006-08-10 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2006228961A (ja) * 2005-02-17 2006-08-31 Toyota Central Res & Dev Lab Inc 半導体装置
DE102005032074B4 (de) * 2005-07-08 2007-07-26 Infineon Technologies Austria Ag Halbleiterbauelement mit Feldstopp
JP2008042013A (ja) * 2006-08-08 2008-02-21 Sanyo Electric Co Ltd 半導体装置の製造方法
DE102007057728B4 (de) * 2007-11-30 2014-04-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
WO2012042640A1 (ja) * 2010-09-30 2012-04-05 株式会社日立製作所 半導体装置
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9478646B2 (en) 2011-07-27 2016-10-25 Alpha And Omega Semiconductor Incorporated Methods for fabricating anode shorted field stop insulated gate bipolar transistor
JP5979993B2 (ja) * 2012-06-11 2016-08-31 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔの製造方法
WO2015049788A1 (ja) * 2013-10-04 2015-04-09 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換器
JP2016201563A (ja) * 2016-07-26 2016-12-01 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔ
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JPH0661495A (ja) * 1992-08-07 1994-03-04 Hitachi Ltd 半導体装置及びその製法
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH06318706A (ja) * 1993-03-08 1994-11-15 Fuji Electric Co Ltd 半導体装置
JPH09199713A (ja) * 1996-01-16 1997-07-31 Mitsubishi Electric Corp 半導体装置
KR0134794B1 (ko) * 1992-08-15 1998-04-20 사또 후미오 전도도 변조형 반도체 장치 및 그 제조방법
KR20000013509A (ko) * 1998-08-10 2000-03-06 김덕중 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법

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US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
JPS6223170A (ja) 1985-07-23 1987-01-31 Nec Corp 電力用縦型電界効果トランジスタの製造方法
US5166770A (en) * 1987-04-15 1992-11-24 Texas Instruments Incorporated Silicided structures having openings therein
JPS6447066U (enExample) 1987-09-17 1989-03-23
JP2706120B2 (ja) * 1988-02-12 1998-01-28 アゼア ブラウン ボヴェリ アクチェンゲゼルシャフト Ｇｔｏパワーサイリスタ
EP0330122B1 (de) 1988-02-24 1995-10-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors
JPH0691263B2 (ja) * 1988-10-19 1994-11-14 株式会社東芝 半導体装置の製造方法
DE69029180T2 (de) * 1989-08-30 1997-05-22 Siliconix Inc Transistor mit Spannungsbegrenzungsanordnung
US5270230A (en) 1990-04-20 1993-12-14 Fuji Electric Co., Ltd. Method for making a conductivity modulation MOSFET
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
JPH0758322A (ja) 1993-08-13 1995-03-03 Toshiba Corp 半導体装置及びその製造方法
EP0696066A3 (en) * 1994-06-30 1998-06-24 Hitachi, Ltd. Semiconductor switching device and power converter
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
DE19710487A1 (de) * 1996-03-13 1997-09-18 Toshiba Kawasaki Kk Halbleitervorrichtung
DE19710731B4 (de) 1996-03-15 2006-02-16 Fairchild Korea Semiconductor Ltd., Puchon Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US5851857A (en) * 1996-09-04 1998-12-22 Ixys Corporation High voltage power MOS device
DE19731495C2 (de) * 1997-07-22 1999-05-20 Siemens Ag Durch Feldeffekt steuerbarer Bipolartransistor und Verfahren zu seiner Herstellung
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
JP2003069019A (ja) 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
JP3984227B2 (ja) 2004-01-15 2007-10-03 株式会社東芝 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JPH0661495A (ja) * 1992-08-07 1994-03-04 Hitachi Ltd 半導体装置及びその製法
KR0134794B1 (ko) * 1992-08-15 1998-04-20 사또 후미오 전도도 변조형 반도체 장치 및 그 제조방법
JPH06318706A (ja) * 1993-03-08 1994-11-15 Fuji Electric Co Ltd 半導体装置
JPH06310725A (ja) * 1993-04-21 1994-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH09199713A (ja) * 1996-01-16 1997-07-31 Mitsubishi Electric Corp 半導体装置
KR20000013509A (ko) * 1998-08-10 2000-03-06 김덕중 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법

Also Published As

Publication number Publication date
KR20010106231A (ko) 2001-11-29
US20010040255A1 (en) 2001-11-15
US20060125005A1 (en) 2006-06-15
EP1156532A2 (en) 2001-11-21
JP3727827B2 (ja) 2005-12-21
CN1218399C (zh) 2005-09-07
EP1156532A3 (en) 2003-11-26
CN1324111A (zh) 2001-11-28
JP2001326353A (ja) 2001-11-22
TWI285955B (en) 2007-08-21
US7271040B2 (en) 2007-09-18

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