HK1042163A1 - 半導體製作方法 - Google Patents

半導體製作方法

Info

Publication number
HK1042163A1
HK1042163A1 HK02103935.0A HK02103935A HK1042163A1 HK 1042163 A1 HK1042163 A1 HK 1042163A1 HK 02103935 A HK02103935 A HK 02103935A HK 1042163 A1 HK1042163 A1 HK 1042163A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor manufacturing
semiconductor
manufacturing
Prior art date
Application number
HK02103935.0A
Other languages
English (en)
Inventor
Christian Nystrom Jan
Johansson Ted
Original Assignee
艾利森電話股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾利森電話股份有限公司 filed Critical 艾利森電話股份有限公司
Publication of HK1042163A1 publication Critical patent/HK1042163A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
HK02103935.0A 1998-11-04 2002-05-27 半導體製作方法 HK1042163A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9803767A SE514707C2 (sv) 1998-11-04 1998-11-04 Metod för halvledartillverkning
PCT/SE1999/001942 WO2000026962A1 (en) 1998-11-04 1999-10-27 Method for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
HK1042163A1 true HK1042163A1 (zh) 2002-08-02

Family

ID=20413175

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02103935.0A HK1042163A1 (zh) 1998-11-04 2002-05-27 半導體製作方法

Country Status (10)

Country Link
US (2) US6313001B1 (zh)
EP (1) EP1145306A1 (zh)
JP (1) JP2002529914A (zh)
KR (1) KR20010080271A (zh)
CN (1) CN1325544A (zh)
AU (1) AU1431500A (zh)
CA (1) CA2349559A1 (zh)
HK (1) HK1042163A1 (zh)
SE (1) SE514707C2 (zh)
WO (1) WO2000026962A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448160B1 (en) * 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US7772653B1 (en) 2004-02-11 2010-08-10 National Semiconductor Corporation Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors
US7067383B2 (en) * 2004-03-08 2006-06-27 Intersil Americas, Inc. Method of making bipolar transistors and resulting product
US20060148188A1 (en) * 2005-01-05 2006-07-06 Bcd Semiconductor Manufacturing Limited Fabrication method for bipolar integrated circuits
CN100424909C (zh) * 2006-05-25 2008-10-08 中国科学院长春应用化学研究所 金属基极有机晶体管及其制备方法
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
WO2009042807A2 (en) 2007-09-26 2009-04-02 Lakota Technologies, Inc. Adjustable field effect rectifier
US8633521B2 (en) 2007-09-26 2014-01-21 Stmicroelectronics N.V. Self-bootstrapping field effect diode structures and methods
US9443773B2 (en) * 2009-02-06 2016-09-13 Nxp B.V. IC and IC manufacturing method
WO2010127370A2 (en) 2009-05-01 2010-11-04 Lakota Technologies, Inc. Series current limiting device
US9419116B2 (en) 2014-01-22 2016-08-16 Alexei Ankoudinov Diodes and methods of manufacturing diodes
US9252293B2 (en) * 2014-01-22 2016-02-02 Alexei Ankoudinov Trench field effect diodes and methods of manufacturing those diodes
CN110890366A (zh) * 2018-09-07 2020-03-17 长鑫存储技术有限公司 半导体存储器的制备方法及半导体存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548704B2 (zh) * 1973-06-01 1980-12-08
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
US4025364A (en) * 1975-08-11 1977-05-24 Fairchild Camera And Instrument Corporation Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
US4535531A (en) * 1982-03-22 1985-08-20 International Business Machines Corporation Method and resulting structure for selective multiple base width transistor structures
US4596605A (en) 1982-12-14 1986-06-24 Junichi Nishizawa Fabrication process of static induction transistor and solid-state image sensor device
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
US4882294A (en) * 1988-08-17 1989-11-21 Delco Electronics Corporation Process for forming an epitaxial layer having portions of different thicknesses
KR930010116B1 (ko) 1990-10-22 1993-10-14 한국전기통신공사 BiCMOS 소자의 제조방법

Also Published As

Publication number Publication date
SE9803767D0 (sv) 1998-11-04
SE514707C2 (sv) 2001-04-02
WO2000026962A1 (en) 2000-05-11
JP2002529914A (ja) 2002-09-10
KR20010080271A (ko) 2001-08-22
AU1431500A (en) 2000-05-22
EP1145306A1 (en) 2001-10-17
CN1325544A (zh) 2001-12-05
US6313001B1 (en) 2001-11-06
CA2349559A1 (en) 2000-05-11
US20010005608A1 (en) 2001-06-28

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