GB0025595D0 - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
GB0025595D0
GB0025595D0 GB0025595A GB0025595A GB0025595D0 GB 0025595 D0 GB0025595 D0 GB 0025595D0 GB 0025595 A GB0025595 A GB 0025595A GB 0025595 A GB0025595 A GB 0025595A GB 0025595 D0 GB0025595 D0 GB 0025595D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0025595A
Other versions
GB2361582A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB0025595D0 publication Critical patent/GB0025595D0/en
Publication of GB2361582A publication Critical patent/GB2361582A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
GB0025595A 1999-10-19 2000-10-18 Semiconductor device manufactoring method Withdrawn GB2361582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29748099A JP2001118921A (en) 1999-10-19 1999-10-19 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
GB0025595D0 true GB0025595D0 (en) 2000-12-06
GB2361582A GB2361582A (en) 2001-10-24

Family

ID=17847055

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0025595A Withdrawn GB2361582A (en) 1999-10-19 2000-10-18 Semiconductor device manufactoring method

Country Status (2)

Country Link
JP (1) JP2001118921A (en)
GB (1) GB2361582A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100426487B1 (en) * 2001-12-28 2004-04-14 주식회사 하이닉스반도체 Method of forming a floating gate in flash memory device
JP2003243662A (en) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same, and semiconductor wafer
US7101785B2 (en) * 2003-07-22 2006-09-05 Infineon Technologies Ag Formation of a contact in a device, and the device including the contact
US7393738B1 (en) 2007-01-16 2008-07-01 International Business Machines Corporation Subground rule STI fill for hot structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214888A (en) * 1997-01-30 1998-08-11 Nec Yamagata Ltd Manufacture of semiconductor device
US5786262A (en) * 1997-04-09 1998-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Self-planarized gapfilling for shallow trench isolation
US6180490B1 (en) * 1999-05-25 2001-01-30 Chartered Semiconductor Manufacturing Ltd. Method of filling shallow trenches

Also Published As

Publication number Publication date
GB2361582A (en) 2001-10-24
JP2001118921A (en) 2001-04-27

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)