SE514707C2 - Metod för halvledartillverkning - Google Patents
Metod för halvledartillverkningInfo
- Publication number
- SE514707C2 SE514707C2 SE9803767A SE9803767A SE514707C2 SE 514707 C2 SE514707 C2 SE 514707C2 SE 9803767 A SE9803767 A SE 9803767A SE 9803767 A SE9803767 A SE 9803767A SE 514707 C2 SE514707 C2 SE 514707C2
- Authority
- SE
- Sweden
- Prior art keywords
- region
- type
- semiconductor
- dopant
- dopants
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 27
- 239000002019 doping agent Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 102000004213 Neuropilin-2 Human genes 0.000 claims description 3
- 108090000770 Neuropilin-2 Proteins 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- XRCFXMGQEVUZFC-UHFFFAOYSA-N anisindione Chemical compound C1=CC(OC)=CC=C1C1C(=O)C2=CC=CC=C2C1=O XRCFXMGQEVUZFC-UHFFFAOYSA-N 0.000 claims 2
- 229960002138 anisindione Drugs 0.000 claims 2
- 239000010410 layer Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 11
- 238000007654 immersion Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 102000004207 Neuropilin-1 Human genes 0.000 description 2
- 108090000772 Neuropilin-1 Proteins 0.000 description 2
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9803767A SE514707C2 (sv) | 1998-11-04 | 1998-11-04 | Metod för halvledartillverkning |
| JP2000580245A JP2002529914A (ja) | 1998-11-04 | 1999-10-27 | 半導体の製造法 |
| CN99813035A CN1325544A (zh) | 1998-11-04 | 1999-10-27 | 半导体制作方法 |
| AU14315/00A AU1431500A (en) | 1998-11-04 | 1999-10-27 | Method for semiconductor manufacturing |
| KR1020017004974A KR20010080271A (ko) | 1998-11-04 | 1999-10-27 | 반도체 제조 방법 |
| CA002349559A CA2349559A1 (en) | 1998-11-04 | 1999-10-27 | Method for semiconductor manufacturing |
| EP99971582A EP1145306A1 (en) | 1998-11-04 | 1999-10-27 | Method for semiconductor manufacturing |
| PCT/SE1999/001942 WO2000026962A1 (en) | 1998-11-04 | 1999-10-27 | Method for semiconductor manufacturing |
| US09/433,795 US6313001B1 (en) | 1998-11-04 | 1999-11-03 | Method for semiconductor manufacturing |
| US09/785,277 US20010005608A1 (en) | 1998-11-04 | 2001-02-20 | Method for semiconductor manufacturing |
| HK02103935.0A HK1042163A1 (zh) | 1998-11-04 | 2002-05-27 | 半導體製作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9803767A SE514707C2 (sv) | 1998-11-04 | 1998-11-04 | Metod för halvledartillverkning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE9803767D0 SE9803767D0 (sv) | 1998-11-04 |
| SE514707C2 true SE514707C2 (sv) | 2001-04-02 |
Family
ID=20413175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9803767A SE514707C2 (sv) | 1998-11-04 | 1998-11-04 | Metod för halvledartillverkning |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6313001B1 (zh) |
| EP (1) | EP1145306A1 (zh) |
| JP (1) | JP2002529914A (zh) |
| KR (1) | KR20010080271A (zh) |
| CN (1) | CN1325544A (zh) |
| AU (1) | AU1431500A (zh) |
| CA (1) | CA2349559A1 (zh) |
| HK (1) | HK1042163A1 (zh) |
| SE (1) | SE514707C2 (zh) |
| WO (1) | WO2000026962A1 (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448160B1 (en) * | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
| US7772653B1 (en) | 2004-02-11 | 2010-08-10 | National Semiconductor Corporation | Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors |
| US7067383B2 (en) * | 2004-03-08 | 2006-06-27 | Intersil Americas, Inc. | Method of making bipolar transistors and resulting product |
| US20060148188A1 (en) * | 2005-01-05 | 2006-07-06 | Bcd Semiconductor Manufacturing Limited | Fabrication method for bipolar integrated circuits |
| CN100424909C (zh) * | 2006-05-25 | 2008-10-08 | 中国科学院长春应用化学研究所 | 金属基极有机晶体管及其制备方法 |
| US8633521B2 (en) | 2007-09-26 | 2014-01-21 | Stmicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
| US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
| WO2009042807A2 (en) | 2007-09-26 | 2009-04-02 | Lakota Technologies, Inc. | Adjustable field effect rectifier |
| US8643055B2 (en) | 2007-09-26 | 2014-02-04 | Stmicroelectronics N.V. | Series current limiter device |
| WO2010089675A1 (en) * | 2009-02-06 | 2010-08-12 | Nxp B.V. | Ic and ic manufacturing method |
| US9252293B2 (en) * | 2014-01-22 | 2016-02-02 | Alexei Ankoudinov | Trench field effect diodes and methods of manufacturing those diodes |
| US9419116B2 (en) | 2014-01-22 | 2016-08-16 | Alexei Ankoudinov | Diodes and methods of manufacturing diodes |
| CN110890366A (zh) * | 2018-09-07 | 2020-03-17 | 长鑫存储技术有限公司 | 半导体存储器的制备方法及半导体存储器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548704B2 (zh) * | 1973-06-01 | 1980-12-08 | ||
| DE2453134C3 (de) * | 1974-11-08 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren |
| US4025364A (en) * | 1975-08-11 | 1977-05-24 | Fairchild Camera And Instrument Corporation | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
| US4133701A (en) * | 1977-06-29 | 1979-01-09 | General Motors Corporation | Selective enhancement of phosphorus diffusion by implanting halogen ions |
| US4535531A (en) * | 1982-03-22 | 1985-08-20 | International Business Machines Corporation | Method and resulting structure for selective multiple base width transistor structures |
| US4596605A (en) | 1982-12-14 | 1986-06-24 | Junichi Nishizawa | Fabrication process of static induction transistor and solid-state image sensor device |
| JPS60117765A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4882294A (en) * | 1988-08-17 | 1989-11-21 | Delco Electronics Corporation | Process for forming an epitaxial layer having portions of different thicknesses |
| KR930010116B1 (ko) | 1990-10-22 | 1993-10-14 | 한국전기통신공사 | BiCMOS 소자의 제조방법 |
-
1998
- 1998-11-04 SE SE9803767A patent/SE514707C2/sv not_active IP Right Cessation
-
1999
- 1999-10-27 AU AU14315/00A patent/AU1431500A/en not_active Abandoned
- 1999-10-27 KR KR1020017004974A patent/KR20010080271A/ko not_active Application Discontinuation
- 1999-10-27 JP JP2000580245A patent/JP2002529914A/ja active Pending
- 1999-10-27 CA CA002349559A patent/CA2349559A1/en not_active Abandoned
- 1999-10-27 CN CN99813035A patent/CN1325544A/zh active Pending
- 1999-10-27 WO PCT/SE1999/001942 patent/WO2000026962A1/en not_active Application Discontinuation
- 1999-10-27 EP EP99971582A patent/EP1145306A1/en not_active Withdrawn
- 1999-11-03 US US09/433,795 patent/US6313001B1/en not_active Expired - Lifetime
-
2001
- 2001-02-20 US US09/785,277 patent/US20010005608A1/en not_active Abandoned
-
2002
- 2002-05-27 HK HK02103935.0A patent/HK1042163A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| HK1042163A1 (zh) | 2002-08-02 |
| CN1325544A (zh) | 2001-12-05 |
| EP1145306A1 (en) | 2001-10-17 |
| JP2002529914A (ja) | 2002-09-10 |
| KR20010080271A (ko) | 2001-08-22 |
| US20010005608A1 (en) | 2001-06-28 |
| SE9803767D0 (sv) | 1998-11-04 |
| CA2349559A1 (en) | 2000-05-11 |
| WO2000026962A1 (en) | 2000-05-11 |
| US6313001B1 (en) | 2001-11-06 |
| AU1431500A (en) | 2000-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |