TWI285955B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TWI285955B
TWI285955B TW090108948A TW90108948A TWI285955B TW I285955 B TWI285955 B TW I285955B TW 090108948 A TW090108948 A TW 090108948A TW 90108948 A TW90108948 A TW 90108948A TW I285955 B TWI285955 B TW I285955B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor substrate
type
impurity
electrode
Prior art date
Application number
TW090108948A
Other languages
English (en)
Chinese (zh)
Inventor
Masahiro Tanaka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TWI285955B publication Critical patent/TWI285955B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
TW090108948A 2000-05-15 2001-04-13 Semiconductor device TWI285955B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000141914A JP3727827B2 (ja) 2000-05-15 2000-05-15 半導体装置

Publications (1)

Publication Number Publication Date
TWI285955B true TWI285955B (en) 2007-08-21

Family

ID=18648965

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090108948A TWI285955B (en) 2000-05-15 2001-04-13 Semiconductor device

Country Status (6)

Country Link
US (2) US20010040255A1 (enExample)
EP (1) EP1156532A3 (enExample)
JP (1) JP3727827B2 (enExample)
KR (1) KR100391560B1 (enExample)
CN (1) CN1218399C (enExample)
TW (1) TWI285955B (enExample)

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JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
CN100461619C (zh) * 2004-12-24 2009-02-11 立积电子股份有限公司 功率放大器及其形成方法
JP2006210606A (ja) * 2005-01-27 2006-08-10 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2006228961A (ja) * 2005-02-17 2006-08-31 Toyota Central Res & Dev Lab Inc 半導体装置
DE102005032074B4 (de) * 2005-07-08 2007-07-26 Infineon Technologies Austria Ag Halbleiterbauelement mit Feldstopp
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DE102007057728B4 (de) * 2007-11-30 2014-04-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
WO2012042640A1 (ja) * 2010-09-30 2012-04-05 株式会社日立製作所 半導体装置
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9478646B2 (en) * 2011-07-27 2016-10-25 Alpha And Omega Semiconductor Incorporated Methods for fabricating anode shorted field stop insulated gate bipolar transistor
JP5979993B2 (ja) * 2012-06-11 2016-08-31 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔの製造方法
WO2015049788A1 (ja) * 2013-10-04 2015-04-09 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換器
JP2016201563A (ja) * 2016-07-26 2016-12-01 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔ
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法

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Also Published As

Publication number Publication date
KR100391560B1 (ko) 2003-07-12
US20060125005A1 (en) 2006-06-15
EP1156532A2 (en) 2001-11-21
CN1218399C (zh) 2005-09-07
KR20010106231A (ko) 2001-11-29
JP3727827B2 (ja) 2005-12-21
CN1324111A (zh) 2001-11-28
US7271040B2 (en) 2007-09-18
EP1156532A3 (en) 2003-11-26
US20010040255A1 (en) 2001-11-15
JP2001326353A (ja) 2001-11-22

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